Improved physical properties of ZnO nanostructures by In inclusion

An alternative route to improve the physical properties of ZnO nanostructures has been demonstrated. With In inclusion in the growth process, we show that the morphology of ZnO nanostructures can be changed from nanopins to nanowires. Besides, the major effects of In inclusion involve the reduction of crystallization velocity, improvement of crystalline quality, and suppression of defect density. Notably, the emission intensity can be enhanced by more than one order of magnitude. Our result therefore provides an excellent approach to obtain good crystalline quality of nanometerials for the application of optoelectronic devices.     

Field emission characteristics from tapered ZnO nanostructures grown onto vertically aligned carbon nanotubes

Zinc oxide (ZnO) nanostructures were grown on vertically aligned carbon nanotubes (CNTs) using thermal chemical vapor deposition (CVD) to enhance the field emission characteristics. The shape of ZnO nanostructure was tapered. Scanning electron microscopy (SEM) image showed the ZnO nanostructures were grown onto CNT surface uniformly. The field electron emission of pristine CNTs and ZnO-coated CNTs were measured. The results showed that ZnO nanostructures grown onto CNTs could improve the field emission characteristics. The ZnO-coated CNTs had a threshold electric field at about 3.1 V/μm at 1.0 mA/cm². The results demonstrated that the ZnO-coated CNT is an ideal field emitter candidate material. The stability of the field emission current was also tested.     

Nanostructured porous ZnO film with enhanced photocatalytic activity

Well-defined ZnO nanostructured films have been fabricated directly on Zn foil via hydrothermal synthesis. During the fabrication of the ZnO nanostructured films, the Zn foil serves as the Zn source and also the substrate. Porous nanosheet-based, nanotube-based and nanoflower-based ZnO films can all be easily prepared by adjusting the alkali type, reaction time and reaction temperature. The composition, morphology and structure of ZnO films are characterized by X-ray diffraction, scanning electron microscope and high-resolution transmission electron microscope. The porous ZnO nanosheet-based film exhibits enhanced photocatalytic activity in the degradation of Rhodamine B under UV light irradiation. This can be attributed to the high surface area of the ZnO nanosheet and the large percentage of the exposed [001] facet. Moreover, the self-supporting, recyclable and stable ZnO photocatalytic film can be readily recovered and potentially applied for pollution disposal.     

Facile template-free sonochemical fabrication of hollow ZnO spherical structures

ZnO hollow spherical structures have been synthesized by a facile template-free sonochemical process. The structures and morphologies of products have been characterized by XRD, FESEM and TEM. The results reveal that hollow spherical structures possess a hexagonal wurtzite structure with the in- and out-diameters of about 400 and 500 nm, respectively. The walls of the hollow structures are self-assembled by nanoparticles, partly composed of hexagonal nanoflakes with 40 nm in side lengths. Room temperature photoluminescence (PL) spectrum showed a UV emission at ∼ 384 nm and a broad green emission at the center of 535 nm. A possible formation mechanism was also proposed.     

Growth mechanism and characterization of ZnO: Al multi-layered thin films by sol-gel technique

In this study, transparent conductive Al-doped ZnO films were deposited by the sol-gel method. The growth mechanism of the film microstructure and its influences on the electrical properties were discussed. It was found that dopant and solution concentration affected the nucleation behavior considerably. The preferred growth orientation of ZnO crystallite was restrained by the film itself. The repeated dip-coating processes did not enable the crystallite size to grow obviously, but it could allow crystallite and atoms to find the suitable positions and therefore led to a better film quality. Consequently, this process led to an electrical resistivity of 7.08 × 10^− 3 Ω cm and a high transmittance of over 80% in the visible region. The best sample was obtained for an Al concentration of 1 at.% and at 600 °C for pre- and post-heat treatment.     

Hybrid photovoltaic devices of polymer and ZnO nanofiber composites

Organic semiconductor-based photovoltaic devices offer the promise of a low-cost photovoltaic technology that could be manufactured via large-scale, roll-to-roll printing techniques. Existing organic photovoltaic devices have currently achieved solar power conversion efficiencies greater than 3%. Although encouraging, the reasons higher efficiencies have not been achieved are poor overlap between the absorption spectrum of the organic chromophores and the solar spectrum, non-ideal band alignment between the donor and acceptor species, and low charge carrier mobilities resulting from the disordered nature of organic semiconductors. To address the latter issues, we are investigating the development of nanostructured oxide/conjugated polymer composite photovoltaic (PV) devices. These composites can take advantage of the high electron mobilities attainable in oxide semiconductors and can be fabricated using low-temperature solution-based growth techniques. Additionally, the morphology of the composite can be controlled in a systematic way through control of the nanostructured oxide growth. ZnO nanostructures that are vertically aligned with respect to the substrate have been grown. Here we discuss the fabrication of such nanostructures and present results from ZnO nanofiber/poly(3-hexylthiophene) (P3HT) composite PV devices. The best performance with this cell structure produced an open circuit voltage (V_oc) of 440 mV, a short circuit current density (J_sc) of 2.2 mA/cm², a fill factor (FF) of 0.56, and a conversion efficiency (η) of 0.53%. Incorporation of a blend of P3HT and (6,6)-phenyl C₆₁ butyric acid methyl ester (PCBM) into the ZnO nanofibers produced enhanced performance with a V_oc of 475 mV, J_sc of 10.0 mA/cm², FF of 0.43, and η of 2.03%. The power efficiency is limited in these devices by the large fiber spacing and the reduced V_oc.     

The kinetics of the hydrothermal growth of ZnO nanostructures

The immersion of a material, seeded with ZnO nanoparticles, in an aqueous solution of Zn(NO₃)₂ and hexamethylenetetramine (HMT) at 90 °C yields an extended array of one-dimensional ZnO on the substrate surface. The structure of the ZnO evolves with reaction time. Initially nanorods are formed. At longer times the rods are tipped with nanotubes. Here we report a series of experiments in which both the composition of the reaction solution; concentrations of H⁺, Zn²⁺ and HMT; and the structure of ZnO deposited on the substrate are monitored as a function of reaction time. It was found that the change from ZnO rod to tube growth arises when the solution composition is such that it is no longer thermodynamically favorable to precipitate Zn(OH)₂.     

Hydrothermal treatment of ZnO nanostructures

Hydrothermal treatment of ZnO nanostructures involves low temperatures (150-200 °C) and elevated water vapor pressure for the purpose of the improvement in the material properties. Under such moderate conditions, no significant changes in the morphology would be expected. Nevertheless, such treatment results in a significant change of nanostructured morphologies of ZnO. The observed changes are dependent on the starting material properties and the substrate used for the growth. In the case of Si substrate, hydrothermal treatment results in significant Si contamination of the samples. In terms of the optical properties, improvements are observed only in some cases, while samples with excellent starting optical properties are degraded by the treatment. Mechanisms responsible for the observed changes are discussed.     

Heterogeneous graphene nanostructures: ZnO nanostructures grown on large-area graphene layers

In this work, the synthesis and characterization of three-dimensional hetergeneous graphene nanostructures (HGN) comprising continuous large-area graphene layers and ZnO nanostructures, fabricated via chemical vapor deposition, are reported. Characterization of large-area HGN demonstrates that it consists of 1-5 layers of graphene, and exhibits high optical transmittance and enhanced electrical conductivity. Electron microscopy investigation of the three-dimensional heterostructures shows that the morphology of ZnO nanostructures is highly dependent on the growth temperature. It is observed that ordered crystalline ZnO nanostructures are preferably grown along the <0001> direction. Ultraviolet spectroscopy and photoluminescence spectroscopy indicates that the CVD-grown HGN layers has excellent optical properties. A combination of electrical and optical properties of graphene and ZnO building blocks in ZnO-based HGN provides unique characteristics for opportunities in future optoelectronic devices.     

Growth Mechanism of Different Morphologies of ZnO Crystals Prepared by Hydrothermal Method

Different morphologies of zinc oxide(ZnO),including microrods,hexagonal pyramid-like rods and flower-like rod aggregates,had been synthesized,respectively,on glass substrates by controlling the reaction conditions(such as precursor concentration,reaction time and pH value) of hydrothermal method.The morphologies of the as-obtained ZnO were observed with scanning electron microscopy and transmission electron microscopy.Also,the crystalline natures of different ZnO crystals were analyzed with X-ray diffraction.The possible growth mechanism of ZnO crystals with different morphologies was discussed.     

Effect of Si wafer resistivity on the growth of ZnO nanorods

ZnO nanorods were electrochemically synthesized using various resistivities of Si substrates. With the increase of Si wafer resistivity from 0.01-0.02 to 110-150 Ω cm, the average diameter of ZnO nanorods increased, while the density of the nanorods decreased. Initial value of the current density increased with a decrease of the Si resistivity, accelerating nucleation and formation of a ZnO nanorods. The saturated current density was increased with a higher Si wafer resistivity, which may be due to an increased surface area of the ZnO layer exposed to the solution, elevating the surface concentration of electrons.     

Formation of ZnO nanostructures in energy-controlled hollow-type magnetron RF plasma

In this study, we investigated how zinc, sputtered from a zinc target, reacts with oxygen on the substrate to form ZnO nanostructures when the discharge parameters, such as gas flow ratio and target bias voltage, are controlled in O₂/Ar plasma. The deposits were estimated by SEM and Raman spectroscopy. Under conditions of a Zn to Ar optical emission intensity ratio of 2/1, a target voltage of − 550 V, a total pressure of 40 Pa, a substrate temperature of 150 °C, an RF power of 50 W, and a deposition time of 30 min, many vertically aligned ZnO nanorods were observed to be deposited on the substrate. The diameter of the rods was typically 50 nm. It was found that the film morphology can be controlled by the sputtering rate of zinc varied by the target bias voltage and gas flow rate.     

ZnO thin films prepared by a single step sol-gel process

ZnO thin films were prepared on fused silica from a single spin-coating deposition of a sol-gel prepared with anhydrous zinc acetate [Zn(C₂H₃O₂)₂], monoethanolamine [H₂NC₂H₄OH ] and isopropanol. Crystallization annealing was performed over the range 500 to 650 °C. X-ray analysis showed that thin films were preferentially orientated along the [002] c-axis direction of the crystal. The films had a transparency of greater than 85% in the visible region for sol-gels with a zinc content of up to 0.7 M and exhibited absorption edges at ∼ 378 nm. The optical band-gap energy was evaluated to be 3.298-3.306 eV. Photoluminescence showed a strong emission centered at ca. 380 nm along with a broad yellow-orange emission centered at ca. 610 nm. Single step sol-gel thin film deposition in the film thickness range from 80 nm to 350 nm was demonstrated. The effect of sol-gel zinc concentration, film thickness and crystallization temperature on film microstructure, morphology and optical transparency is detailed. A process window for single spin coating deposition of c-axis oriented ZnO discussed.     

An alternative approach for the oriented growth of ZnO nanostructures

An original two-step process was developed to control the oriented growth of ZnO films on SiO₂ substrates. This process combines a chemical bath deposition technique for the seeding and nucleation site generation of self-assembled nanorods and the pyrosol process for the oriented growth of high-crystalline quality ZnO films. Both preferred out-of-plane orientation along the polar < 0001> direction and crystallinity can be enhanced on seed layers. In addition, denser internal structures can be achieved.     

One-minute microwave-assisted chemical bath deposition of nanostructured ZnO rod-arrays

Microwave-assisted chemical bath deposition (MACBD) is an emerging route for rapid synthesis of films and nanostructured particles. In this paper we report MACBD of ZnO rod-array films on bare glass substrates from an aqueous bath of tetra ammonium zinc complex. The deposition time is reduced to about 1 min as compared to around 60 min for conventional CBD. X-ray diffraction study shows that as-deposited films are uniaxially out-of-plane textured along the c-axis. Scanning Electron Microscopy reveals that the films consist of elongated elliptical tapered rods of diameters 250 to 350 nm. Atomic Force Microscopy shows that the films consist of about 350 nm grains. The RMS roughness is about 60 nm. The energy band gap is 3.27 eV as estimated from optical data. The films are n-type with electrical conductivity of 1 × 10^− 4 S/cm.