La0.67Sr0.33MnO3中Ag-Ti的掺杂效应

将La0.67Sr0.33MnO3（LSMO）、Ag2O及TiO2粉混合经高温烧结后制备了钙钛矿相/xAg两相复合体系（x是Ag与钙钛矿材料的物质的量比）,系统地研究了Ag-Ti的共掺杂对LSMO电性和磁电阻效应的影响.0.07摩尔比Ti4＋离子的B位掺杂使LSMO的居里温度降至室温.Ag的掺入对Tc影响不大,Tp逐渐升高.由于钙钛矿颗粒属性的改善和金属导电通道的出现,材料的电阻率明显下降.Ag掺杂使室温磁电阻得到显著增强,室温下从x=0.30样品中得到最大的磁电阻,约为32%,是La0.67Sr0.33MnO3样品的8倍,La0.67Sr0.33Mn0.93Ti0.07O3样品的1.6倍.     

Annealing Effect on Transport and Magnetic Properties of La_(0.67)Sr_(0.33)MnO_3 Thin Films Grown on Glass Substrates by RF Magnetron Sputtering

The manganite La0.67Sr0.33MnO3(LSMO) thin films were grown on glass substrates in a mixed argon and oxygen atmosphere by using RF magnetron sputtering.The structural characteristics,transport behaviors and magnetic properties of LSMO films were studied by annealing the films in air at 550 and 620 ℃.The out-of-plane lattice parameter a LSMO contracted after annealing and was close to that of bulk LSMO abulk,indicating that the internal strain was fully relaxed.Nanocrystalline grains were observed in the annealed films.Enhanced saturation magnetization and metal-to-insulator transition temperature(TMI=268 K) were also obtained.Curie temperatures(Tc) of the as-grown films was 340 K with the same as that of annealed at 550 ℃,but dropped to 315 K when the annealing temperature increased to 620 ℃,which can be attributed to the oxygen release during annealing in atmosphere.     

Ag／La0.67Sr0.33MnO3/Pt异质结构的电阻开关特性

采用脉冲激光沉积技术在Pt／Ti／SiO2／Si（100）衬底上制备出多晶La0.67Sr0.33MnO3（LSMO）薄膜,对其电脉冲致非挥发可逆电阻开关特性进行研究．结果表明,Ag/LSMO／Pt结构具有明显的室温电脉冲诱发电阻开关特性,且在宽电压脉冲作用下表现出较低的开关电压和较快的变阻饱和速度．由此可见,总脉冲能量或电荷（电流作用）为该结构的电阻开关效应提供驱动力．对Ag／LsMO／Pt结构进行了耐久性测试,表明该结构具有良好的疲劳特性与保持特性,可应用于新型不挥发存储器、传感器及可变电阻等电子元器件的研制     

La0.67Sr0.33MnO3中Bi的掺杂效应

将Bi2O3掺杂到用溶胶—凝胶法制备的La0.6Sr0．33MnO3(LSMO)微粉中,XRD测量结果证实有过量的Bi析出。随着Bi掺杂量的增加,LSMO／(Bi2O3)x/2材料电阻率发生明显变化,在x=(0—0．10)摩尔比的掺杂范围内,电阻率先上升后突然下降。当X=0．1时,电阻率比未掺杂样品下降了一个数量级。Bi掺杂对低温和室温磁电阻有着完全不同的影响。低温下,随掺杂量增加,磁电阻下降;室温下Bi的微量掺杂可以使磁电阻增大,掺入x=0.03Bi使室温磁电阻由-4.4％提高到-5．6％。     

Microwave assisted hydrothermal synthesis and magnetocaloric properties of La0.67Sr0.33MnO3 manganite

We report microwave assisted hydrothermal synthesis and magnetocaloric properties of La0.67Sr0.33MnO3 manganite. The synthesized La0.67Sr0.33MnO3 nanoparticles was characterized using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), energy dispersive X-ray spectroscopy (EDS) and magnetization measurements. The XRD results indicated that La0.67Sr0.33MnO3 nanoparticles have polycrystalline nature with monoclinic structure. FE-SEM results suggested that La0.67Sr0.33MnO3 nanoparticles are assembled into rod like morphology. Magnetization measurements show that La0.67Sr0.33MnO3 nanoparticles exhibit transition temperature (Tc) above room temperature. The maximum magnetic entropy change (deltaS(M))max was found to be 0.52 J/kg K near Tc approximately 325 K at applied magnetc field of 20 kOe. This compound may considered as potential material for magnetic refrigeration near room temperature.     

Effect of grain boundaries on the local electronic transport in nanostructured films of colossal magnetoresistive manganites

We have studied the spatially resolved local electronic properties of nanostructured films of a colossal magnetoresistive (CMR) material by local conductance mapping (LCMAP) using a variable temperature scanning tunneling microscope (STM), as a function of temperature and magnetic field. The experiments were carried out on nanostructured (NS) films of rare-earth hole doped manganites like La0.67Sr0.33MnO3 (LSMO), (prepared by Chemical Solution Deposition (CSD)) having average grain sizes around 100 nm or less. Due to the presence of a large number of natural grain boundaries (GBs), these films exhibit interesting transport properties that are not observed in single crystals and epitaxial films of the same composition, such as low field magnetoresistance (LFMR), and significant MR at higher fields over the entire temperature range. Spatially resolved measurements of electronic properties, like the LCMAP, traces the contribution of the grain boundaries to the electronic transport in these NS films. It is found that the application of a low magnetic field enhances the DOS in the GB region, leading to the observed low field response of the MR.     

Irreversible Colossal Magnetoresistance in La0.58Dy0.09Ca0.33MnO3

The representative sample La0.58Dy0.09Ca0.33MnO3 of Dy doped La0.67Ca0.33MnO3 rare-earth manganites was investigated.The most important effect of Dy doping is to introducethe magnetoimpurity and form the spin clusters which induce dramatically large CMR in Lao.58Dyo.09Cao.33MnO3. The fitting results of field-induced resistivity decrease to the Brillouin function indicate that the CMR is caused by the spin dependent hopping between spin clusters. It is the magnetic field that reduces the size of spin clusters and induces a field-induced irreversible CMR behaviour.     

Structural phase transition at the percolation threshold in epitaxial (La0.7Ca0.3MnO3)1-x:(MgO)x nanocomposite films

'Colossal magnetoresistance' in perovskite manganites such as La0.7Ca0.3MnO3 (LCMO), is caused by the interplay of ferro-paramagnetic, metal-insulator and structural phase transitions. Moreover, different electronic phases can coexist on a very fine scale resulting in percolative electron transport. Here we report on (LCMO)1-x:(MgO)x (0 < x < or = 0.8) epitaxial nano-composite films in which the structure and magnetotransport properties of the manganite nanoclusters can be tuned by the tensile stress originating from the MgO second phase. With increasing x, the lattice of LCMO was found to expand, yielding a bulk tensile strain. The largest colossal magnetoresistance of 10(5)% was observed at the percolation threshold in the conductivity at xc 0.3, which is coupled to a structural phase transition from orthorhombic (0 < x < or 0.1) to rhombohedral R3c structure (0.33 < or = x < or = 0.8). An increase of the Curie temperature for the Rc phase was observed. These results may provide a general method for controlling the magnetotransport properties of manganite-based composite films by appropriate choice of the second phase.     

Aluminum oxide formation at Al/La(1-x)Sr(x)MnO3 interface: a computational study for resistance random access memory applications

Resistance random access memory (ReRAM) is emerging as a next-generation nonvolatile memory. One of the most promising materials for the ReRAM application is a composite of a reactive metal [such as aluminum (Al)] and a mixed-valance manganite [such as La(1-x)Ca(x)MnO3 (LCMO) and La(1-x)Sr(x)MnO3 (LSMO)]. One of the current hypotheses regarding the origin of the resistive switching of such systems is a voltage-controlled reversible formation of a high-resistance aluminum oxide (AlO(x)) layer at the Al/LC(S)MO interface through oxygen migration from LC(S)MO. To validate this hypothesis, quantum mechanics (density functional theory) calculations were carried out on an atomistic model of the resistive-switching phenomena at the Al/LSMO interface (the composite systems of Al/LSMO and AlO(x)/LSMO) as well as on the component materials such as Al, AlO(x), LaMnO3, LaMnO(3-delta), La(1-x)Sr(x)MnO3, and La(1-x)Sr(x)MnO(3-delta). The changes in the structure, energy, and electronic structure of these systems during the oxygen vacancy formation in LSMO, the oxygen migration through the Al/LSMO interface, and the AlO(x) formation were investigated.     

Device performance of ferroelectric/correlated oxide heterostructures for non-volatile memory applications

Ferroelectric field effect devices offer the possibility of non-volatile data storage. Attempts to integrate perovskite ferroelectric materials with silicon semiconductors, however, have been largely unsuccessful in creating non-volatile, nondestructive read memory elements because of difficulties in controlling the ferroelectric/semiconductor interface. Correlated oxide systems have been explored as alternative channel materials to form all-perovskite field effect devices. We examine a non-volatile memory using an electric-field-induced metal-insulator transition in PbZr(0.2)Ti(0.8)O(3)/La(1 - x)Sr(x)MnO(3) (PZT/LSMO), PZT/La(1 - x)Ca(x)MnO(3) (PZT/LCMO) and PZT/La(1 - x)Sr(x)CoO(3) (PZT/LSCO) devices. The performance of these devices in the areas of switching time and retention are discussed.     

La0.67Ca0.33MnO3/YBa2Cu4O8/La0.67Ca0.33MnO3三层膜的时间效应研究

报导了La0.67Ca0.33MnO3/YBa2Cu4O8/La0.67Ca0.33MnO3薄膜中超导特性的时间效应.样品在空气中存放11个月后,超导转变温度都降低,而且每个系列样品的临界厚度增加.对用La0.67Ca0.33MnO3作保护层的YBa2Cu4O8薄膜进行时间效应测量,结果表明当La0.67Ca0.33MnO3层的厚度大于40nm时可以防止水对YBa2Cu4O8薄膜的影响.     

The Tb Doping Effect on the Room Temperature Magnetoresistance in (La1-xTbx)0.67Sr0.33MnO3 (x≤ 0.4)

by Tb in (La1-xTbx)0.67Sr0.33MnO3, the room temperature magnetoresistance △R/R0 drops at first, then undergoes an increase near x≈0.1, and finally drops again. The value of room temperature magnetoresistance at a field H=12 kOe for (La1-xTbx)0.67Sr0.33MnO3 is -3.56%. The enhancement of the room temperature magnetoresistance induced by an appropriate Tb substitution in (La1-xTbx)0.67Sr0.33MnO3 is correlated with the shifts of the Curie temperature and metal-insulator temperature to near room temperature. The drop of the room temperature magnetoresistance at large Tb doping-contents may be due to its lower TC and TMI far from the room temperature.     

Research on a New Process of Preparation for Nano-SiO2 with High Activity and Mesopores

Nano-SiO_2 with high activity and mesopores was prepared through sol-gel synthesis followed by low-temperatureheat treatment and ball milling firstly in our experiments. TEM was performed to measure particle sizes. Nitrogenadsorption experiments were carried out to estimate specific surface area, porous distribution and porous ratio by BETand BJH methods. The content of Si-OH in SiO_2 surface was calculated by analysis of the results of hydrogen-oxygencontent mensuration (HOCM). As a result, appropriate heat treatment system and ball milling time are important topreparation for nano-SiO_2 with high activity and mesopores, which are 5～50 nm particles, 5～6 nm average aperture,85%～93% porous ratio, and 51%～55% Si-OH content in surface. Nano-SiO_2 with that structure has high surfaceenergy and activity. This process, which has simple facilities and operation rules, is a new way of preparation fornano-SiO_2 with high activity and mesopores.     

Ti/La_(0.7)Ca_(0.3)MnO_3/Pt结构器件中“负”电阻开关特性研究

以Pt/Ti/SiO2/Si为衬底,制备了具有电阻转变特性的Ti/La0.7Ca0.3MnO3(LCMO)/Pt结构器件.X射线衍射分析表明LCMO薄膜呈纳米晶或非晶态,扫描电子显微镜及原子力显微镜分析表明LCMO薄膜表面平整、光滑致密.电学测试结果表明Ti/LCMO/Pt结构具有明显的双极型"负"电阻转变特性,低电阻态的导电过程为空间电荷限制电流机制,高电阻态的导电过程为Poole-Frenkel发射机制.利用氧化还原反应的随机性和TiOx中间层空间分布的不均匀性,定性地解释了高电阻态的不稳定性以及电流-电压曲线上的电流突变现象.     

Magnetic Properties of LCMO/LSMO Thin Films on LAO and ALO Substrates

Two La_0.7Ca_0.3MnO₃(35?nm)/La_0.7Sr_0.3MnO₃(30?nm) manganite bilayers were grown on LaAlO₃(LAO) and Al₂O₃(ALO) substrates (i.e., the LCMO/LSMO/LAO and LCMO/LSMO/ALO samples) using a magnetron sputtering technique. The individual Curie temperatures of the LSMO and LCMO sublayers were 325?K, 225?K for the LCMO/LSMO/LAO sample and 325?K, 210?K for the LCMO/LSMO/ALO sample. The zero-field-cooled (ZFC) magnetization of the samples demonstrated maximums at ??150?K and ??170?K, respectively. The difference between the ZFC and field-cooled (FC) magnetizations was greater for the bilayer deposited on ALO substrate due to its polycrystalline nature. The coercive field of the LCMO/LSMO/LAO sample was greater at room temperature 298?K than at 150?K: This was interpreted as due to a change of the magnetic state of the LCMO sublayer in this temperature interval.     

铁磁(La0.7Ca0.3MnO3)/高温超导（YBa2Cu3O7）双层薄膜微结构的高分辨电镜研究

采用脉冲激光沉积法在LaAlO3(LAO)衬底上生长了YBa2Cu3O7/La0.7Ca0.3MnO3(YBCO/LC-MO)和La0.7Ca0.3MnO3/YBa2Cu3O7(LCMO/YBCO)两种外延薄膜,利用高分辨电子显微镜研究了其微观结构。在YBCO/LCMO/LAO薄膜中,LCMO以层-岛模式生长,并形成层状取向畴结构。YBCO层均由c轴取向晶粒组成,其中含有c/3平移畴界、额外CuO层及Y2O3第二相等缺陷结构。在LCMO/YBCO/LAO薄膜中,LAO衬底上初始生长的YBCO为c轴取向,至一定厚度(几个纳米)转为c与a轴混合生长。LCMO层在YBCO上外延生长并具有[100]m与[011]m混合取向畴结构。在LCMO/YBCO界面未观察到失配位错,因此二者界面属应变型界面。     

Annealing effect on the structure and electronic transport properties in La5/8Ca3/8MnO3/ErMnO3 multilayer thin films

Ferromagnetic La5/8Ca3/8MnO3 (LCMO) and Ferroelectric ErMnO3 (EMO) multilayer thin films with sandwich structure (LCMO/EMO/LCMO) were grown on (LaAlO3)0.3(Sr2AlTaO6)0.7 (001) [LSAT (001)] substrates by pulsed laser deposition (PLD) method. For these films, the structural characterization was carried out by X-ray diffraction (XRD), and the temperature-dependence resistivity (p-T) showing the metal-insulator transition (Tp) also was measured. In the multilayer thin films the LCMO (002) peak move to lower Bragg angles after annealing at 900 degrees C for 30 hours under 1atm Oxygen pressure, and this condition is much different from the LCMO single layer films where the (002) peak moves to higher Bragg angle after annealing due to the lattice mismatch between the LCMO layer and the substrate. By increasing the thickness of LCMO, the multilayer samples show two MR peaks in a wide temperature range during the process of M-l transition. This phenomenon is attributed to a new (La5/8Ca3/8)xEr(1-x)MnO3 layer produced by the solubility between LCMO and EMO layers after high-temperature annealing. In this paper, we provide some evidence of dissolution between LCMO and EMO layers, and discuss the influence on structure and electronic transport properties in the composite thin films by annealing.     

Microstructural Characteristics of La0.7Ca0.3MnO3 Films and Multilayers

1. IntroductionEver since discovery of colossal magnetoresistance(CMR) in perovskite type Rel--.A.MnO3(Re=lajnthanides, A=alkaline earth elemellts), therehas been enormous illterest in these materials both inthe bulk and the filmsll~5]. A prominellt feature ofthese materials is a large maximum in the resistivitynear the ferromagnetic transition temperature (To).The resistance is dramatically decreased when an external magnetic field is applied, which leads to a verylarge (colossal) magneto…     

Giant room temperature electric-field-assisted magnetoresistance in La0.7Sr0.3MnO3/n-Si nanotip heterojunctions

An on-chip approach for fabricating ferromagnetic/semiconductor-nanotip heterojunctions is demonstrated. The high-density array of Si nanotips (SiNTs) is employed as a template for depositing La(0.7)Sr(0.3)MnO(3) (LSMO) rods with a pulsed-laser deposition method. Compared with the planar LSMO/Si thin film, the heterojunction shows a large enhancement of room temperature magnetoresistance (MR) ratio up to 20% under 0.5 T and a bias current of 20 μA. The MR ratio is found to be tunable, which increases with increasing external bias and the aspect ratios of the nanotips. Electric-field-induced metallization, in conjunction with nanotip geometry, is proposed to be the origin for the giant MR ratio.     

Electric resistance and magnetoresistance of a two-layer epitaxial heterostructure (30 nm)La<Subscript>0.67</Subscript>Ca<Subscript>0.33</Subscript>MnO<Subscript>3</Subscript>/(30 nm)La<Subscript>0.67</Subscript>Ba<Subscript>0.33</Subscript>MnO<Subscript>3</Subscript>

Two-layer epitaxial heterostructures (30 nm)La_0.67Ca_0.33MnO₃/(30 nm)La_0.67Ba_0.33MnO₃ (LCMO/LBMO) have been grown by laser deposition on single crystal (001)LaAlO₃ (LAO) substrates. In this system, the upper (LCMO) layer occurs under the action of tensile stresses in the substrate plane, whereas the lower (LBMO) layer exhibits biaxial compression. The formation of a 30-nm-thick LCMO film on the surface of the 30-nm-thick LBMO layer leads to an increase in the level of mechanical stresses in the latter layer. The maximum electric resistivity ρ of the (30 nm)LCMO/(30 nm)LBMO/LAO structure was observed at a temperature 25–30 K below that corresponding to the maximum of the ρ(T) curve for a single (30 nm)LBMO film on the same LAO substrate.