半导体激光器封装中热应力和变形的分析

为了解决半导体激光器封装的热应力和变形问题,利用有限元软件ANSYS对SnPb、In、AuSn三种焊料焊接激光器管芯的情况分别进行了模拟,得到了相应的热应力大小和变形情况,分析了焊料和热沉对激光器热应力和变形的影响.对比了这几种不同封装方法的激光器发光区图像的弯曲程度,验证了模拟结果.由模拟和实验结果可见,采用In焊料是减小激光器热应力和变形的最佳选择.另外,适当增加热沉厚度,选择热匹配的材料,焊接时进行预热,可减小激光器的热应力和变形.通过模拟和实验分析,提出了减小热应力和变形的方法,为优化激光器的封装设计提供了参考依据.     

覆Ag层对用于LD封装的In焊料性能的影响

In焊料由于其优越的可塑性以及优良的导电、导热特性,被广泛用于半导体激光器(LD)的封装。但是In焊料遇空气易氧化,尤其在焊接加热的过程中,氧化现象更加明显,因此一般当天制备当天使用。为防止氧化,可以在In焊料表面镀一层Ag或Au作为保护层,因为Ag成本较Au低,可作为首选的保护层。关于In-Ag合金性能的研究已有过相关报道,但关于In-Ag合金的表面形貌及Ag层厚度对内部In的影响的报道还很少。文章通过扫描电子显微镜、XRD对不同样品进行了表面和成分的分析,得到了关于Ag对内部焊料的影响以及不同冷却速率下焊料的表面形貌。     

用于大功率半导体激光器的Ag-In焊料研究

大功率半导体激光器的封装对焊料选择极其重要,因为焊料导热或导电性差,激光器工作产生的大量热量使焊料焊接失效,激光器也会遭到损坏。为此,文中研究了软焊料In及其保护层Ag作为一种焊料组合,通过真空蒸发镀膜仪蒸发蒸镀Ag-In与Ag-In-Ag-In两种薄膜方式。根据微结构知识及扩散动力学与热动力学相结合讨论了Ag-In焊料产生间隙的原因,通过XRD衍射仪了解到薄膜间界面化合物AgIn2的生成可能导致表面微结构的改变,结果表明Ag层对In层易被氧化的性质起到了保护作用,多层的Ag-In焊料层可抑制大量间隙的产生,提高器件工作可靠性及稳定性。     

半导体激光器焊接的热分析

为了解决大功率半导体激光器的散热问题,利用有限元软件ANSYS,采用稳态热模拟方法,分析了半导体激光器内部的温度分布情况,对比分析了In、SnPb、AuSn几种不同焊料烧结激光器管芯对激光器热阻的影响。由模拟结果可见,焊料的厚度和热导率对激光器热阻影响很大,在保证浸润性和可靠性的前提下,应尽量减薄焊料厚度。另外,采用高导热率的热沉材料和减薄热沉厚度可有效降低激光器热阻。在这几种焊接方法中,采用In焊料Cu热沉焊接的激光器总热阻最小,是减小激光器热阻的最佳选择。通过光谱法测出了激光器热阻,验证了模拟结果,为优化激光器的封装设计提供了参考依据。     

高功率二极管激光器Au80Sn20焊料焊接实验研究

半导体激光器封装工艺过程对于激光器的输出特性、寿命等性能有重要影响,其中焊料的选择和焊接工艺是最关键的因素。本文采用磁控溅射的方法,在 WCu 热沉上制备了Au80Sn20合金焊料,取代了传统的In焊料,并对焊接工艺进行了改进。国外沉积的和我们制备的Au80Sn20合金焊料焊接DL芯片后的性能参数很接近。充分说明双靶分层溅射镀膜可以实现二极管激光器的封装要求,从而为优化半导体激光器制备工艺和提高半导体激光器的性能奠定基础。     

808nm连续1500W阵列激光器封装

针对高功率全固态激光器抽运源的需求,开展了808 nm连续1500 W阵列激光器封装技术研究。理论上从封装应力、封装热阻和光束整形等三方面分析了大功率激光器封装的要求。解释了封装应力来源、表现和缓解途径;模拟了微通道热沉结构的封装散热效果云图;指出了光束整形的必要性以及与封装残余应力的关系。技术上通过研制铟/金复合焊料体系,配合控制烧焊曲线和烧焊过程,得到了良好的烧焊效果;结合设计使用高精度光束整形装配夹具,实现阵列平均"smile"值2μm,发散角6 mrad的实验效果。     

复合型微通道热沉设计与制作技术研究

从大功率半导体激光器可靠性封装和应用考虑,利用商用有限元软件Abaqus与CFdesign对微通道热沉材料、结构进行优化设计,结合相应的制造工艺流程制备实用化复合型微通道热沉。微通道热沉尺寸为27 mm×10.8 mm×1.5 mm,并利用大功率半导体激光阵列器件对所制备热沉进行散热能力、封装产生的"微笑效应"进行了测试,复合微通道热沉热阻约0.3 K/W,"微笑"值远小于无氧铜微通道封装线阵列,可以控制在1μm以下。复合型微通道热沉能满足半导体激光阵列器件高功率集成输出的散热需求与硬焊料封装的可靠性要求。     

烧结温度对AuSn焊料薄膜及封装激光器性能的影响

采用不同温度对Au80Sn20共晶合金焊料进行烧结实验,研究了AuSn焊料薄膜在烧结后的形貌、物相组成以及对封装激光器的性能影响等.焊料在烧结后形成ξ相Au5Sn和δ相AuSn两种金属间化合物,随着烧结温度的上升,两相晶粒均明显长大,而ξ相Au5Sn趋向于形成枝晶.较低温度下烧结的焊料表面粗糙度较高,不利于激光器管芯的贴装.高温过烧焊料薄膜的导电导热性能有少许提升,对封装激光器管芯的功率没有明显影响,但焊料薄膜中残余应力较高,使激射波长有所蓝移.该结果将为AuSn焊料的烧结参数优化和硬焊料封装激光器的性能分析提供参考和指导.     

用于大功率半导体激光器的新型焊料

在大功率半导体激光器列阵及叠阵的组装中,焊料的选择是极其关键的,因为焊料直接参与对激光器的导电、导热激光器所需的电流全部从焊料通过,而半导体激光器列阵或叠阵工作时电流是很大的,可达50A～100A。同时半导体激光器工作时产生的热量非常大,如焊料的导热性不好,由于电流的热效应,就会在焊料上产生巨大的热量,使焊料熔化。文中研制了一种新型的焊料,这种焊料在两层铟之间蒸镀几层金,焊料由钨/镍/金/铟/铜等多层金属构成。利用这种焊料研制出脉冲功率达100W的半导体激光器列阵。     

In焊料电镀工艺研究

研究了In焊料的电镀制备方法和制备过程,分析了In焊料电镀过程中出现的镀层覆盖不完全、焊料晶粒尺度大、焊料熔化后气孔较多、凝固后表面不均匀等问题的起因,并针对这些问题,作了相应的实验改进。通过调整镀液的pH值,优化电镀电流、添加光亮剂等方法,深入讨论并得到了直流、脉冲两种电镀方式下的电镀条件,实现了稳定可控的镀速和相对较小的焊料晶粒,在半导体激光器工业的焊料制备方面具有实践意义。     

微电子封装中Sn—Aq—Cu焊点剪切强度研究

提出了一种对微电子封装器件中焊点剪切强度进行测试的方法，可有效降低测试误差。利用该方法，对Sn—Ag—Cu无铅焊料分别在Cu基板和Ni-P基板上形成的焊点，经不同的热时效后的剪切强度进行了测量，并对断裂面的微观结构进行了研究。结果表明，新的剪切测试方法误差小，易于实施，焊点剪切强度、断裂面位置与焊料在不同基板界面上金属间化合物的形貌、成分有关。     

Creep Properties of Composite Solders Reinforced with Nano- and Microsized Particles

In the present work the creep properties of Sn37Pb- and Sn0.7Cu-based composite solders reinforced with metallic nano- and microsized Cu and Ag particles have been studied. First, a series of volume percentages of reinforcements were selected to optimize the content of reinforcing particles. Then, the composite solder with optimum volume fraction of reinforcement particles, corresponding to the maximum creep rupture lifetime, was selected to investigate the effect of applied stress and temperature on the creep rupture lifetime of the composite solder joints. In the creep rupture lifetime test, small single-lap tensile-shear joints were adopted. The results indicate that composite solders reinforced with microsized particles exhibit better creep strengthening than composite solders reinforced with nanosized particles, although the mechanical tensile shear strength of composite solder joints reinforced with nanosized particles may be higher than those reinforced with microsized particles. Moreover, the creep strengthening action of the reinforcement particles is more obvious under conditions of lower applied stress or lower test temperature. Strengthening by metallic Cu or Ag reinforcement particles decreases with increasing temperature or applied stress. The Sn0.7Cu-based composite solder reinforced with microsized Ag particles is a low-cost lead-free solder that is easy to process and may have good market potential.     

Research advances in nano-composite solders

Recently, nano-composite solders have been developed in the electronic packaging materials industry to improve the creep and thermo-mechanical fatigue resistance of solder joints to be used in service at high temperatures and under thermo-mechanical fatigue conditions. This paper reviews the driving force for the development of nano-composite solders in the electronic packaging industry and the research advances of the composite solders developed. The rationale for the preparation of nano-composite solders are presented at first. Examples of two nano-composite solder fabrication methods, a mechanical mixing method and an in-situ method, are explained in detail. The achievements and enhancements in the nano-composite prepared solders are summarized. The difficulties and problems existing in the fabrication of nano-composite solders are discussed. Finally, a novel nano-structure composite solder, which attempts to solve the problems encountered in the fabrication of nano-composite solders, is introduced in detail. Guidelines for the development of nano-composite solders are then provided.     

半导体AuSn焊料低温真空封装工艺研究

介绍了半导体金锡(AuSn)焊料焊接封装的影响因素:焊接气氛、镀金层、焊料,在低温真空焊接封装的基础上,重点探讨了AuSn焊料真空钎焊封装的影响因素、AuSn焊料本身的组分比及其浸润性等对焊接封装的影响、AuSn焊料真空焊接封装炉温曲线设置及焊接温度和时间的正交实验、AuSn焊料真空焊接封装中真空度的影响因素、真空度对...     

真空炉金锡封焊

文章在介绍半导体金锡焊料封装工艺的基础上,重点对金锡焊料、炉温曲线设置等工艺技术问题进行了深入研究。基于大量的金锡焊料真空焊接封装实验及理论分析,研究了器件气密封装技术。讨论了封焊夹具、管帽镀层、合金状态、封接面表面、压块、焊料厚度以及加热程序对焊接质量的影响。密封后的产品在经过环境试验和机械试验考核后,封装气密性能很好地满足要求。并且结合应用背景证明了所采用的合金及封装工艺的可行性。     

有限元数值模拟在BGA/QFP/CCGA器件焊点可靠性研究中的应用

有限元数值模拟方法因其可以有效研究IC封装中无铅焊点的可靠性,被国内外专家学者所青睐,使得无铅焊点可靠性数值模拟成为IC封装领域的重要研究课题。综述了有限元法在球珊阵列封装(BGA)、方型扁平式封装(QFP)、陶瓷柱栅阵列封装(CCGA)3种电子器件无铅焊点可靠性方面的研究成果。浅析该领域国内外的研究现状,探究有限元方法在无铅焊点可靠性研究方面的不足及解决办法,展望无铅焊点可靠性有限元模拟的未来发展趋势,为IC封装领域无铅焊点可靠性的研究提供理论支撑。     

Comparing the Impacts of the Capillary and the Molded Underfill Process on the Reliability of the Flip-Chip BGA

In the assembly process for the conventional capillary underfill (CUF) flip-chip ball grid array (FCBGA) packaging the underfill dispensing creates bottleneck. The material property of the underfill, the dispensing pattern and the curing profile all have a significant impact on the flip-chip packaging reliability. Due to the demand for high performance in the CPU, graphics and communication market, the large die size with more integrated functions using the low-K chip must meet the reliability criteria and the high thermal dissipation. In addition, the coplanarity of the flip-chip package has become a major challenge for large die packaging. This work investigates the impact of the CUF and the novel molded underfill (MUF) processes on solder bumps, low-K chip and solder ball stress, packaging coplanarity and reliability. Compared to the conventional CUF FCBGA, the proposed MUF FCBGA packaging provides superior solder bump protection, packaging coplanarity and reliability. This strong solder bump protection and high packaging reliability is due to the low coefficient of thermal expansion and high modulus of the molding compound. According to the simulation results, the maximum stress of the solder bumps, chip and packaging coplanarity of the MUF FCBGA shows a remarkable improvement over the CUF FCBGA, by 58.3%, 8.4%, and 41.8% (66 $mu {rm m}$), respectively. The results of the present study indicates that the MUF packaging is adequate for large die sizes and large packaging sizes, especially for the low-K chip and all kinds of solder bump compositions such as eutectic tin-lead, high lead, and lead free bumps.      

Hermetic Packaging Using Eutectic SnPb Solder and Cr/Ni/Cu Metallurgy Layer

We have developed an easy, low-cost, and low-temperature optoelectronic hermetic packaging technology utilizing the eutectic SnPb solder and the Cr/Ni/Cu bonding pad. Bonding characteristics of the design were investigated in three different setups: silicon-silicon, silicon-glass, and glass-glass samples. Hermeticity was achieved at 200 degC without flux for all samples during the final bonding process. The bonding pads did not dewet during or after the reflow process. By utilizing the eutectic SnPb solder, the self-alignment process can be achieved. Because the bonding process was conducted through visual alignment, original misalignment was estimated to be more than 100 mum. The surface tension of melting solder during the reflow process allowed the samples to self-align and obtain a misalignment of less than 20 mum after solidification, which was 4% of the entire solder width. The bonding strength of the three setups ranged from 3 to 10 MPa. Among the three setups, glass-glass samples appear to have the strongest bonding strength. This low-temperature and cost-effective soldering process has demonstrated its feasibility and potential utilization in optoelectronic packaging     

微电子封装无铅钎焊的可靠性研究

本文阐述了微电子封装聚用无铅钎料的必要性。概述了无钎铅料的研究现状,最后着重分析讨论了微电子封装无铅钎焊的可靠性问题。     

面向MEMS封装的微钎料球键合技术

微钎料球键合技术是一种成本低、适应性强,可靠性好的键合技术,容易与现有的IC自动化设备集成。微钎料球键合技术结合倒扣封装可以实现低成本、高密度以及高可靠性的MEMS封装;而且具有自对准或者自组装的功能,在MEMS封装中获得了广泛的应用。准确地预测微钎料球键合对于MEMS自组装的影响依赖于动态模型的发展。微钎料球键合技术的出现推动了标准化的MEMS封装工艺的进程。