产生区宽度W_g＝W－ξW_f中参数ξ的估计

产生参数（产生寿命、表面产生速度）的测量是半导体材料和器件工艺质量检验的重要内容，产生区宽度的Ｐｉｅｒｒｅｔ模型形式简单，但其含有一待定参数，本文主要就是研究这一参数的估计方法。     

一种可用于直接计算产生寿命的产生区宽度模型

本文在分析已有的深耗尽态下半导体表面产生区宽度模型的基础上,提出了一个可用于由MOS结构的电容时间瞬态特性直接计算产生寿命的新模型。该新模型可以看作是Rabbani Rabbani模型的一种简化,但同时又可看作是对Zerbst模型的一个改进。实验数据的分析表明,用该模型得到的产生寿命值与Rabbani模型的结果基本一致。     

两次线性电压扫描法测量半导体的产生参数

采用形式简单但较为精确的Ｐｉｅｒｒｅｔ的产生区宽度模型，分析了线性扫描电压作用下ＭＯＳ电容器的电容一时间（Ｃ—ｔ）瞬态特性。在此基础上，建议了一种通过两次不同电压扫描率的线性电压扫描来测定半导体的体产生寿命和表面产生速度的方法。     

阶跃电压法测量产生寿命的简单方法

采用Ｚｅｒｂｓｔ产生区宽度模型，提出了阶跃电压法中一个计算简单、方便、快捷的确定产生寿命的方法。     

马氏体不锈钢激光表面熔化处理后的表层残余应力

采用两种极端的多道顺序激光扫描工艺，证实了马氏体不锈钢激光表面熔化处理后表层残余应力并非都是压应力。残余应力性质与熔池尺寸和重叠区相对大小有关。表面重叠区宽度大于熔池表面宽度一半，才会有明显的表层压应力；重叠区过小，往往为拉应力。     

阶跃电压法确定产生寿命的计算公式

采用一个最近发展起来的产生区宽度模型，导出了描述阶跃电压作用下ＭＯＳ电容器的电容－时间瞬态特性方程，给出了阶跃电压法确定产生寿命的一个计算公式。     

产生区宽度Wg=W—ξWf中参数ξ的估计

产生参数的测量是半导体材料和器件工艺质量检验的重要内容，产生区宽度的Ｐｉｅｒｒｅｔ模型形式简单，但其含有一待定参数，本文主要就是研究这一参数的估计方法。     

对MIS结构热弛豫时间的分析计算

对MIS（金属?绝缘层?半导体）结构从深耗尽过渡至强反型状态所需的热弛豫时间进行了研究。通过建立较教科书更精确的模型,对热弛豫时间τth与深耗尽时耗尽区宽度xd0、强反型时耗尽区最大宽度xdm、耗尽区内少子净产生率G和掺杂浓度ND等关键物理量之间的关联进行了推导,并基于MEDICI平台对推导结果完成了仿真验证,从而加强了学生对半导体表面效应的理解,也利于他们未来从事半导体方面的创新研究。     

激光参量对血管支架切缝形貌及粗糙度的影响

为了研究激光加工工艺参量对血管支架切缝形貌以及表面粗糙度的影响，采用不同参量对比分析试验法，开展了心血管支架316L材料光纤激光切割实验，分析了激光脉冲宽度、激光功率和切割速率等不同工艺参量对材料切缝形貌及粗糙度的影响，得出激光切割支架的最佳工艺参量组合。结果表明，不同区域切缝形貌和表面粗糙度存在差异性，其中支架切缝的汽化区厚度主要受脉冲宽度及激光功率影响，当脉冲宽度为35μs时，支架切缝汽化区厚度最大可达到120μm；支架切缝汽化区粗糙度随切割速率增加先减小后增大，当切割速率为6mm/s时，切缝表面粗糙度值最低为650nm。此研究结果为心血管支架光纤加工的研究及后续光整加工奠定了理论基础。     

CdS／CuInSe2多晶异质结太阳电池的光电流和转换效率的计算和分析

用Ｒｏｔｈｗａｒｆ的晶界复合损失模型对ＣｄＳ／ＣｕＩｎＳｅ２多晶异质结太阳电池的光电流和转换效率进行了计算，并在计算中考虑到异质结内表面复合因子Ｇ和势垒区宽度随电压的变化因素，结果发现Ｐ区受主浓度ＮＡ有一个最佳值。将我们的计算结果和Ｌ．Ｌ．Ｋａｚｍｅｒｓｋｉ等人的实验结果对照，两者基本一致。     

On nonequilibrium C-V characteristics of MOS inversion region

The nonequilibrium C-V characteristics of the inverted MOS surface under several linear voltage ramp rates are investigated. The apparent emission rates of recombination-generation centers determined from these measurements strongly depend on the ramp rate and increase monotonically with the space charge width. This apparent increase is attributed to the neglected interband impact generation of electron-hole pairs in the high field region of the surface space charge layer. The effects of surface state density and high temperature annealing on these emission rates are also presented.     

Theoretical and practical investigation of the thermal generation in gate controlled diodes

The different components of thermal generation in a gate controlled diode are studied theoretically and experimentally. Expressions for the generation current in the space charge layer, the diffusion current from the quasi-neutral bulk and the surface generation current are derived for a gated-diode. The width of the generation zone within the space charge layer is calculated as a function of the energy level of the trap and the diode reverse voltage. This leads to a characteristic of the leakage current as a function of the space charge layer width. It is pointed out that the diffusion current can influence the leakage current and cannot be neglected in structures with a low dark current. In the second part the gate controlled diode is used to characterize the thermal generation in structures with a homogeneous and low dark current. A generation lifetime of 5.5 msec and a surface generation velocity at a depleted surface of 1.5 cm/sec is derived. The generation lifetime is found to be constant as a function of depth into the substrate. A considerable diffusion current is measured which is comparable to the generation current in the space charge layer.     

The impact of Miller and coupling effects on single event transient in logical circuits

With feature size scaling down, Miller feedback effects of gate-to-drain capacitance for transistors and coupling effects between interconnects will dramatically affect single event transient (SET) generation and propagation in combinational logic circuits. Two ways of ICs are arranged: linear and “S” types. For pulse width and delay time, SET propagations in two layouts of digital circuits are compared under considering the coupling effects between interconnects. An analytical model is used to describe the impact of Miller and coupling effects on SET propagation. A criterion for SET occurrence in digital circuits with effects of coupling and Miller feedback is presented. The influence of temperature and technology node on SET generation and propagation is analyzed. The results indicate that (1) the existence of these effects will improve the critical charge for SET generation and also reduce the estimated SER, and (2) the way of “S” type is more immune to SET than the scheme of linear.     

线性调频激励的红外无损检测及其数值模拟

线性调频激励的红外检测是一种新型的红外检测技术,能弥补传统红外检测方法存在的不足,对不同的缺陷都具有较好检测的能力,为了研究相位检测法在线性调频激励下的红外检测中的应用,利用有限体积法数值模拟计算出二维瞬态导热模型,得出所建立模型在线性调频激励条件下的温度场,利用FFT变换法对模拟计算得到的材料表面温度进行信号处理,从而得到相位变化信息,得出了Chirp 调制时间、加热强度、材料、缺陷深度、高度、以及宽度等因素对检测结果的影响,为线性调频激励下的红外检测法的应用提供理论支撑。     

A new linear sweep technique to measure generation lifetimes inthin-film SOI MOSFET's

A new linear sweep technique to measure generation lifetimes (τ_g) in silicon-on-insulator (SOI) material is presented. A detailed analytic formulation is applied to fully-depleted and partially-depleted SOI films and used to simulate the behavior of the SOI devices under linear sweep conditions. A novel algorithm accurately determines the effective generation width in fully depleted SOI films. The measurement technique is experimentally verified by applying the algorithm to fully depleted SIMOX P-channel MOSFET's where observed lifetimes ranged from 0.3 μs to 2.4 μs     

Evaluation of fiber slippage and core-axis offset distribution inoptical fiber mechanical splice

When fibers are clamped together between two fiber-holding substrates and butt-joined, variations in the fabrication accuracy of both fibers and substrates usually result in the fibers experiencing different clamping forces. If, for example, a couple of fibers are undersized or the substrate surface is deformed, the clamping force will be insufficient in places. In such cases, the fibers will leave only faint linear marks on the substrate surface and may slip when internal or external forces act on them. By using Hertz's theory, we converted the resistance force to fiber slippage into a line width curve for the onset of slippage. We spliced single fibers with known outer diameters to examine the influence of line width on slippage. We performed a fiber retention test, a temperature cycling test to determine any insertion loss change, and observed the linear marks with a microscope. No fiber slippage occurred when the width of the linear marks was outside the line width curve. Furthermore, we calculated the core-axis offset probability distribution when the optical fiber axes were aligned     

阵元排布对线性阵列天线的影响分析

线性阵列作为智能天线的一种阵元排布方式,在第三代移动通信中有着特殊的应用。在相同阵元个数的情况下,采用Matlab软件对均匀线阵、约束最小冗余线阵和最优哥伦布线阵的角度分辨能力和主瓣宽度进行仿真比较。仿真结果表明,最优哥伦布线阵可以获得更佳的角度分辨能力和更窄的主瓣宽度,但是会引起方向图旁瓣电平的升高。     

Investigations on field enhanced generation in semiconductors

By relating both pulsed MOS capacitance and gated diode leakage current measurements, the present work on one hand, has tried to disprove both the surface generation hypothesis and the hypothesis of bulk defects put forward by many workers in order to explain the initial enhanced generation observed in pulsed MOS capacitance measurements. On the other hand, through suitably designed experiments using both the above devices and an improved analysis for the effective generation width, it has been possible to show good agreement of the enhanced generation, both qualitatively and quantitatively, with Poole-Frenkel's electric field enhancement model. However, at low fields, below about 2 × 10⁴ V/cm, the generation rate seems to remain constant and a modified Poole-Frenkel theory may be needed to explain this.