共查询到20条相似文献,搜索用时 62 毫秒
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报道了一种LD近贴泵浦、KTp晶体腔内倍频的NdYVO4/CrYAG/KTP结构高重复频率被动调Q绿光激光器.当腔内加入布氏片时,获得了单频运转.在注入泵浦功率为800mW时,得到平均功率43 mW、脉冲宽度26.4 ns、重复频率39.3 kHz、峰值功率41.4 W的被动调Q单频脉冲绿激光输出. 相似文献
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报道了一种 LD近贴泵浦、KTP晶体腔内倍频的 Nd∶ YVO4/Cr∶ YAG结构高重复频率被动调 Q绿光激光器。在注入泵浦功率为 75 0 m W时 ,得到平均功率 86m W、脉冲宽度2 6.6ns、重复频率 79.2 k Hz、峰值功率 41 .1 W的被动调 Q脉冲绿光输出 相似文献
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LD泵浦Nd:Gd0.42Y0.58VO4/Cr4 :YAG被动调Q锁模激光器 总被引:1,自引:0,他引:1
报道了一种激光二极管(LD)泵浦Nd:Gd0.42Y0.58VO4/Cr^4+:YAG/KTP结构的被动调Q锁模绿光激光器,采用简单、结构紧凑的平凹腔设计.在注入泵浦功率7.8 W时,调Q锁模绿光平均输出功率为200 mW,调制深度约为40%,脉冲包络重复频率200 kHz,半高宽度100 ns. 相似文献
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Cr4+:YAG被动调Q4倍频全固态紫外激光器的研究 总被引:11,自引:3,他引:8
设计了LD泵浦Cr4+:YAG被动调Q的全固态Nd:YAG脉冲红外激光器。腔外首先经过焦距为100mm的聚焦透镜,将 1064nm的红外激光耦合到长为9mm的KTP2倍频晶体中,得到平均功率为29mW的脉冲绿光。然后将532nm的脉冲绿光经过焦距为30mm的聚焦透镜,耦合到长为4mm的BBO4倍频晶体上,获得了峰值功率为7.3W,平均功率为1.1mW,重复频率为12.5kHz,脉冲宽度为 12ns的266nm紫外激光,其绿光 紫外光的转换效率为3.8%,红外光紫外光的转换效率为0.7%。 相似文献
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Hanno Hardt 《The Journal of communication》1995,45(2):108-114
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M.V. Koutras 《Microelectronics Reliability》1997,37(4):597-603
A dual failure mode (DFM) system is a system whose components are subject to two different kinds of failure (three-state units). In this paper, a new system (the consecutive-k, r-out-of-n:DFM system) is introduced by considering an extension of the well-known and much studied consecutive-k-out-of-n:F system to a dual failure mode environment. Recursive formulae are provided for the evaluation of the reliability of a consecutive-k, r-out-of-n:DFM system with unequal component failure probabilities. Finally, some simple upper and lower reliability bounds are established which provide quite adequate approximations, at least for highly reliable systems. 相似文献
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In this work, heterojunctions of p-ZnTe:N/CdTe:Mg/n-CdTe:I/GaAs for photovoltaic and photodiode application were grown epitaxially by using molecular beam system. Current-voltage profile of the heterojunction device was studied in dark and under various illumination intensities. The obtained photocurrent is found to depend on the light intensity. The main heterojunction parameters, such as shunt and series resistances, the barrier height and the ideality factor were extracted from the current-voltage profile using diverse methods at ambient temperature. Values of the barrier height and the series resistance were obtained from Cheung's functions. A large value of the series resistance causes the non-ideal characteristics of current–voltage measurements. The study of the current-voltage characteristics of high voltage region suggests a predominant space charge limited mechanism. Moderate values of short circuit current and open circuit voltage were obtained through a light intensity of 140 mW/cm2, a current and voltages of 0.336 mA and 370 mV, respectively. The high photosensitivity and responsivity for the current under illumination condition suggests that the prepared heterojunction device could be employed as a photodiode sensor. 相似文献
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R.O. Al-Seedy 《Microelectronics Reliability》1996,36(2):203-206
The objective of this paper is to derive the analytical solution of the truncated single-channel Erlangian queue M/Ej/1/N with balking and state-dependent service rate. The researcher deduces pns the probability of n units in the system (n = 1, 2, 3,…, N) and the customer in service being in phase backwards, i.e. j is the first phase of service and 1 is the last (a customer leaving phase 1 actually leaves the system). p0 is the probability of an empty system by using the iterative method. At the end of this paper some special cases are obtained. 相似文献
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《Solid-State Circuits, IEEE Journal of》1977,12(2):93-101
A high performance, second generation I/SUP 2/L/MTL gate for digital LSI applications with TTL compatibility has successfully been designed, characterized, and demonstrated fully functional over a wide current range and the military temperature range of -55 to 125/spl deg/C. Performance is measured using an in-line five-collector gate having one end injector. The gate performed with the following characteristics at 100 /spl mu/A injector current: /spl beta//SUB U//SUP eff//spl ges/4 for all collectors at 25/spl deg/C and /spl ges/2.5 at -55/spl deg/C, /spl alpha//SUB rec///spl alpha//SUB F//spl cong/0.58 and /spl tau/~/SUB d/=18-20 ns from -55 to 125/spl deg/C, and a speed-power product of 1.4 pJ at 25/spl deg/C. At low injector currents, a constant speed-power product of 0.36 pJ at 25/spl deg/ was obtained. 相似文献
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Nikola Roi 《International Journal of Communication Systems》1999,12(1):23-47
Transmission of image/video messages over communication networks is becoming a standard way of communication due to very efficient compression algorithms that reduce required channel capacity to an acceptable level. However, all compression standard techniques are strongly sensitivitive to channel disturbances and their application is suitable only for practically noiseless channels. In standard noisy channels, the effect of errors on a compressed data bit stream can be divided into two categories: systematic errors defined by the structure of data blocks, and random errors caused by amplitude changes of transmitted components. A systematic error can be detected at the receiver through control of the data stream structure and corrected by error concealment methods or by automatic repeat request (ARQ) procedures. Random errors, noise and burst‐like errors, as well as impulse noise, should be controlled through channel coding. It is reasonable that an integrated source and channel coding methods should be preferred and should give better coding performance. In this paper, a new framework for an image/video coding approach has been presented in which the source and channel coding is integrated in a unique procedure. Image compression is performed in a standard way of the JPEG algorithm based on discrete cosine transform (DCT) and error control coding is based on the real/complex‐number (N,M) BCH code using discrete Fourier transform (DFT) specified with zeros in the time domain, i.e. with roots in the frequency domain. Efficiency of the proposed method is tested on two examples, an one‐dimensional real‐valued time sequence coded by real‐number (20,16) BCH code using DFT, and an example of an image coded by complex (10,8) BCH code using DFT with the correction ability of up to 8 impulses per transmitted 8×8 block. In addition, two decoding methods based on Berlekamp–Massey algorithm (BMA) and the minimum‐norm algorithm (MNA) have also compared. Copyright © 1999 John Wiley & Sons, Ltd. 相似文献
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Yacoub M.D. Fraidenraich G. Tercius H.B. Martins F.C. 《Broadcasting, IEEE Transactions on》2005,51(4):504-511
This paper specializes and parameterizes the general result presented elsewhere in the literature in order to introduce, fully characterize, and investigate the Symmetrical /spl eta/-/spl kappa/ Distribution, a general distribution used to describe the statistical variation of the envelope in a fast fading environment. It proposes estimators for the involved parameters and uses field measurements to validate the distribution. In spite of its specialization, the Symmetrical /spl eta/-/spl kappa/ Distribution still includes, as special cases, important distributions such as Rayleigh, Rice, Hoyt, Nakagami-q, and One-Sided Gaussian. The fact that the Symmetrical /spl eta/-/spl kappa/ Distribution has one more parameter than the well-known distributions renders it more flexible. Of course, in situations in which those distributions included in it give good results a better fitting is given by the Symmetrical /spl eta/-/spl kappa/ Distribution. In addition, in many other situations in which these distributions give poor results a good fitting may be found through the Symmetrical /spl eta/-/spl kappa/ Distribution. More specifically, its nonmonomodal feature finds applications in several circumstances, examples of which are given in this paper. 相似文献
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Al/ZnO/p-Si, Al/PMMA/p-Si and Al/PMMA/ZnO/p-Si structures were fabricated. Based on the measured current–voltage (C–V) and capacitance–voltage curves, the electrical characteristics of these heterostructures such as ideality factor, barrier height and series resistance of each structure were analyzed and then compared with those of Al/PMMA/ZnO/p-Si. According to C–V measurement, it was found that the Al/PMMA/ZnO/p-Si structure indicates the better electronic performance rather than other structures. The obtained results represent low series resistance (19.3 Ω) after coating with polymethyl methacrylate (PMMA) over ZnO/p-Si heterojunction structure for Al/PMMA/ZnO/p-Si heterostructure. 相似文献