浅谈KKS电厂标识系统的应用

发电企业属于设备维护型企业,设备运行维护管理是发电企业主要管理工作。采用一套科学合理设备编码系统对设备科学管理具有重要作用。本文对KKS发电厂设备标识采统进行了简要介绍,对如何在发电企业应用KKS发电厂设备标识系统谈了自己的看法,对采用KKS对设备进行标识所能带来的收益进行了分析。     

电站设备远程故障预警系统设计

电站设备远程故障预警系统能够在设备劣化阶段对设备进行预警。它使用了当今最主流的hadoop大数据平台,实现了数据的采集、处理。在此基础上对数据进行建模分析,同时数据分析工具结合专家判据实现故障预警功能。电站设备远程故障预警系统实现了对设备故障的感知,在设备故障劣化阶段对其进行维护,从而避免了设备严重损坏,有效的辅助设备预知性检修。     

特高频局部放电检测技术在GIS设备上的典型应用

输变电设备的带电检测技术作为状态检修工作强有力的技术支撑,已经纳入到国网公司的常规检测体系中来,是对电力设备进行故障诊断的有效技术手段。笔者介绍了GIS设备内部常见缺陷、特高频局部放电检测技术的基本原理、现场检测方法。同时介绍了一起特高频局部放电检测技术在GIS设备上的典型应用,成功发现了设备内部存在的绝缘缺陷并对其进行定位,最终找到了缺陷原因并进行了现场处理。通过介绍表明,对GIS设备进行带电检测,能够在缺陷早期及时发现设备内部存在的局部放电现象,并根据检测结果有效地指导设备的检修工作。     

智能高压设备技术策略分析

智能高压设备是根据我国智能电网建设需求提出的一种新的设备型式。阐述了智能高压设备的技术理念,提出了优化自身控制、支持电网优化运行和支持优化检修是智能高压设备在智能化应用方面的主要功能,并逐一进行了分析讨论。智能高压设备仍然是发展中的技术,分析了智能高压设备研制及其技术目标实现中需要进一步解决的若干关键技术问题。最后对智能高压设备的应用前景进行了展望。     

发电厂设备编码系统的研究

设备编码是对设备进行管理、可靠性分析及维修的基础工作之一。合理的设备编码系统应具有唯一性、实用性和可扩充性 ,而且最好具有通用性。在研究国际国内几种典型设备编码的基础上 ,对它们各自的特点进行了分析 ,提出了有效的编码方案并在某发电厂进行了实施     

用色谱法判断设备内部故障

对色谱法判断设备内部故障进行了简要的论述,并对充油设备的故障类型进行了分析,用事实证明色谱法对判断设备潜伏性故障具有超前预知性。     

风险维修分析技术在某火电厂高温过热器检修中的应用

风险维修分析技术是一项新兴的设备维修管理技术,可应用于电厂所有设备的检修.在对某电厂高温过热器进行状态检修的基础上,采用风险维修分析技术对该设备进行分析,明确了设备的风险等级,评价了危险点.据此,对维修策略进行了优化,使锅炉设备的检修和运行的安全经济性得以提高.     

基于PDA的变电智能巡视系统的设计与应用

采用PDA进行变电设备巡视,可集成设备、缺陷等信息,可以督促巡检员到位,有助于规范化巡视,避免信息二次录入等。本文对变电设备PDA巡视系统进行了设计,并在实际中进行了应用。在实践中取得了非常好的效果。     

基于状态监测的智能变电站二次设备状态检修

电网二次设备是变电站的守卫者,对其进行状态监测是实时了解二次设备运行状态的重要手段,也是保证变电站安全稳定运行的重要保证。本文梳理了智能变电站中二次设备状态信息内容及来源,重点对二次设备实时运行状态信息进行分析,并讨论其获取方式,在此基础上,建立了二次设备状态诊断知识库,对二次设备进行故障原因分析和故障定位,为状态检修决策提供技术支持,最后通过工程实例,介绍本文研究内容的应用情况,该工程中建立了状态监测系统,实现了主站对二次设备实时监测,为二次设备状态检修提供了技术支撑。     

设备状态检修的思考

我省电力系统一直按传统的计划检修模式进行设备检修管理 ,设备检修周期按规程规定的时间和次数进行。而状态检修是改变这种不合理管理的最好办法。文章主要从电力系统设备检修中存在的问题和状态检修的优势进行了综述 ,介绍了有关状态检修的基本概念 ,并对计划检修和状态检修进行了分析 ,阐述了设备状态检修管理的重要性。     

雷电保护装置的有效性研究

In addition to the conventional Franklin Rod,many non-conventional air terminals are being used as lightning protection devices.As cited in previous works,these non-conventional devices emit space charge in the vicinity of the terminals during the process of lightning stroke.A number of factors affect the performance of these lightning protection devices,among them are geometry and dimension of the devices,location of the device above the ground,height of the cloud above the ground,and polarity of the lightning stroke.The performance of these lightning protection devices has been a topic of discussion by researchers for many years.Some studies focused on the magnitude of emission current from these devices as a criterion to evaluate their performances.The critical flashover voltage(CFO)between the devices and a metal screen simulating cloud can also be used as another criterion to evaluate the performance of the devices.Laboratory measurements were conducted in controlled conditions on different types of lightning protection devices to compare their performance.Four different types of devices were used in the present study:Franklin Rod,TerraStat models TS 100,TS 400,and Spline Ball Ionizer.The study focused on the CFO voltage of the air gap between devices and the metal screen.The CFO voltage was evaluated using standard switching and lightning impulses.The measurements were recorded for positive as well as negative polarity.The air gap between the devices and metal screen was selected at 2 m and 3 m.The results obtained provide a better understanding of the electrical performance of lightning protection devices.     

变电站二次设备防误风险管控系统实现方案

在现有变电站微机防误系统的基础上,采用非电量方式采集二次设备状态,扩展二次设备模型,提出二次设备防误规则,建立一次设备与二次设备、二次设备与二次设备之间的防误逻辑。设计基于专家知识库的二次设备防误算法,实现一、二次设备操作防误闭锁功能。建立二次设备检修断面,通过操作票与上锁、挂牌配合的方式,进行安全隔离措施的布防与检修操作过程防控,实现检修作业全过程安全自动管控。现场实践表明,二次设备防误风险管控系统提升了一、二次设备操作防误水平和检修作业安全风险管控能力,保障电网设备操作的安全性。     

室内802．11b WLAN与UWB—WPAN ＆ ZigBee-WPAN的干扰

目前，大量的无线设备应用在2．4GHz这一开放频段，很明显各种设备之间存在着潜在的干扰问题，在将来的办公或家庭环境中，如何避免或减少各种WPAN设备与WLAN的相互射频干扰的问题变得重要起来。本文将分析由UWB、ZigBee技术分别构成的两种新型WPAN设备和WLAN之间的影响，分别从WLAN设备链路的吞吐量和信噪比等角度分析了802．11bWLAN和两种短距离技术设备的干扰，并进行了WPAN设备的工程实验和模拟仿真。     

汽轮发电机组轴系扭振保护装置RTDS测试

利用RTDS实时仿真技术,对盘南电厂装设的机组轴系扭振保护TSR装置,形成闭环测试系统,对扭振保护装置的性能进行试验研究。闭环测试系统由实时数字仿真系统、扭振保护装置,功率放大器以及实际的直流控制保护装置等组成。搭建了基于南方电网的交直流混合RTDS模型以模拟各种不同开机方式和不同的直流运行方式的系统运行方式。解决了将转速信号转换为扭振保护装置所要求的高频方波脉冲信号的问题。对扭振保护装置的功能和动态特性进行了较为全面的验证。这是国内首次将联接实际直流控制保护装置的RTDS应用于汽轮机组扭振保护装置的性能测试。     

微机保护不对应启动重合闸保护动作分析

针对不对应启动重合闸保护动作模拟试验中两套配置的微机保护装置动作行为不一致现象,结合各种常用微机保护装置的动作时间分析,认为两套保护重合闸命令发出存在时间差是导致保护装置动作行为不一致现象发生的原因,并提出运行中的注意事项.     

Monte Carlo simulation of nanoelectronic devices

The Monte Carlo simulation method is used to analyze the behavior of electron and hole mobility in different nanoelectronic devices including double gate transistors and FinFETs. The impact of technological parameters on carrier mobility is broadly discussed, and its behavior physically explained. Our main goal is to show how mobility in multiple gate devices compares to that in single gate devices and to study different approaches to improve the performance of these devices. Simulations of ultrashort channel devices taking into account quantum effects are also shown.     

区域电网停电事故引发对安全自动装置合理配置的思考

介绍了某区域电网停电事故,并就其原因进行了详细分析,根据分析得出了对安全自动装置配置的一些思考:需要认真研究电源与电网安全自动装置的配合问题,尤其是低频低压减载(解列)装置与备用电源自动投入装置的协同配合,要加强电网建设,完善电网结构,规范小电厂继电保护与安全自动装置管理,并认真计算配置区域电网中的无功补偿装置,以确保电力系统的安全稳定运行。     

Power flow control and power flow studies for systems with FACTSdevices

In this paper, the modeling of flexible AC transmission system (FACTS) devices for power flow studies and the role of that modeling in the study of FACTS devices for power flow control are discussed. FACTS devices are solid-state power converters that have the capability of control of various electrical parameters in transmission circuits. A number of power flow study programs were developed in order to model various types of FACTS devices. Three main generic types of FACTS devices are suggested and the integration of those devices into power flow studies, studies relating to wheeling and interchange power flow control are illustrated     

Effect of Ge Surface Nitridation on the$hboxGe/HfO_2/hboxAl$MOS Devices

In this paper, the effect of Ge surface nitridation on Ge/HfO₂/Al MOS capacitors has been studied. Low-frequency measurements indicated the presence of significant interface states in surface nitrided devices. As temperature decreased from 300 to 140 K, electron trapping increased monotonically in both nitrided and nonnitrided devices, but the interface state density didn't show a major fluctuation in nitrided devices as compared to nonnitrided devices. A constant voltage stress was applied on both samples to test their behavior under stress. Electron trapping was dominant in nonnitrided devices at lower stress voltages. After relaxation, detrapping was observed as devices recovered to their original state. Nitrided devices showed hole trapping after stress, but further device deterioration was observed after relaxation     

High-Pressure Deuterium Annealing Effect on Nanoscale Strained CMOS Devices

High-pressure deuterium annealing was applied to nanoscale strained CMOS devices, and its effect was characterized in terms of charge pumping method, hot-carrier-induced stress, negative bias temperature instability stress, and 1/f noise for the first time. For the NMOS, the characteristics of both control and tensile-stressed NMOS devices were improved by annealing; in particular, tensile-stressed NMOS devices had more improved characteristics than the characteristics of control devices. However, for the PMOS, compressive-stressed PMOS devices particularly had more degraded characteristics compared with the characteristics of control PMOS devices.