精矿粉和Mn3O4制备MnZR功率铁氧体工艺研究

为了降低功率铁氧体的制备成本，采用传统氧化物陶瓷工艺，用精铁矿粉代替Fe2O3、用Mn3O4代替MnCO3制备出高性能功率软磁MnZn铁氧体．研究了精铁矿粉和Mn，04制备MnZn铁氧体的固相反应及预烧温度、烧结温度和掺杂对样品磁性能的影响．实验结果表明：精矿粉经氧化生成的α—Fe2O3立即与Mn3O4反应生成MnZn铁氧体，使固相反应更完全；预烧温度为1100℃，烧结温度为1240～1280℃时样品性能最佳；适当的掺杂可降低样品的功耗．样品最佳性能如下：μi=2268；Bs=508mT；Te=227℃；P0：34．5W／kg，综合性能达到日本TDKPC30材料性能水平．     

低温烧结工艺对Bi-CVG铁氧体微结构及磁性能的影响

以氧化物Y2O3、Fe2O3、Bi2O3、V2O5、CaCO3为原料,采用固相反应法制备了Y1.05Bi0.75Ca1.2Fe4.4V0.6O12(Bi-CVG)铁氧体材料。通过XRD、SEM和MATS等方法考察了不同烧结温度、保温时间对产物体积密度、晶体结构、形貌和磁性能的影响。结果表明,选择适当的保温时间可以有效提高铁氧体的密度;烧结温度对相稳定性和磁性能影响显著。当烧结条件为1100℃与6h时,所制备的Bi-CVG样品属于体心立方晶系,且粒度大小分布比较均匀,结构致密。该样品磁性能良好,平均晶粒尺寸约为2μm,密度为5.20g/cm3;主要磁特性为剩磁Br=24.57mT,矫顽力Hc=764.4A/m,饱和磁化强度4πMs=343.2×10-4T。     

Bi2O3对烧结LiZn铁氧体性能的影响

采用氧化物陶瓷工艺制备了掺Bi2O3的Li0.4Zn0.2Fe24O4铁氧体．用XRD、SEM、密度测试和磁性能表征，研究了Bi2O3对LiZn铁氧体性能的影响．结果表明：Bi2O3能有效抑制烧结过程中的锂挥发，促进固相反应，降低烧结温度，但过多的Bi2O3会阻止晶粒生长；适量掺杂Bi2O3可以提高LiZn铁氧体的饱和磁感应强度和矩形比，降低铁氧体的矫顽力．     

NiO-CoO复合掺杂对高B_s低损耗MnZn铁氧体性能影响

采用传统氧化物工艺制备了NiO-CoO掺杂的MnZn软磁铁氧体材料。研究了NiO、CoO复合掺杂对高Bs低损耗的MnZn铁氧体微结构及电磁性能的影响。结果表明,掺杂0.1%(质量分数)CoO和1.28%(质量分数)NiO的MnZn铁氧体晶粒生长均匀,具有较高的饱和磁感应强度,最低损耗点位于100℃。随着NiO掺杂量的增加,最低功耗点向高温方向移动。CoO掺杂导致材料密度增大,功耗降低。在钟罩炉中按特定烧结曲线烧结MnZn铁氧体具有较好的综合性能:μi=2 198,Pcv=319kW/m3,Bs=540mT(T=25℃),Bs=451mT(T=100℃)。     

软磁锰锌铁氧体纳米粉体的烧结特性研究

研究了烧结温度和掺杂对软磁锰锌铁氧体材料性能和微观结构的影响。采用传统成型工艺和冷等静压成型相结合,进行分段烧结,研究坯体的致密化程度和晶粒生长情况。烧结体的密度、微观结构和相组成分别采用阿基米德法、扫描电镜（SEM）和X射线衍射仪（XRD）进行测试分析。烧结体的磁性能用振动样品磁强计（VSM）来测定。结果表明：烧结温度在850℃时材料密度、微观结构和磁性能较好,但还未能达到高性能产品的标准,需要通过掺杂等其他手段进行进一步研究。     

升温速率和烧结温度对纳米晶MnZn粉体直接制备功率铁氧体性能的影响

采用纳米晶粉体直接造粒压制成块材烧结的方法制备MnZn铁氧体,研究了不同的升温速率和烧结温度对样品微观结构、磁性能的影响。研究表明,与传统的制备方法相比,直接烧结纳米晶MnZn铁氧体粉体,可以降低烧结温度。采用低的升温速率有利于提高样品的密度和初始磁导率,降低比损耗因子,并且低温烧结可以形成良好的微观结构和磁性能。     

Bi2O3掺量对Li0.45Ni0.2Ti0.1Fe2.25O4铁氧体显微结构及磁性能的影响

采用氧化物法陶瓷工艺,在缺铁配方的基础上,制备不同Bi2O3掺量的Li0.45Ni0.2Ti0.1Fe2.25-δO4(δ=0.06)铁氧体样品。结果表明,添加Bi2O3没有在锂铁氧体中形成杂相,烧结后陶瓷样品物相组成单一,结晶状况良好;适量的Bi2O3能有效改善材料微观形貌,促进锂铁氧体的烧结致密化,有助于提高材料的饱和磁化强度4πMs和剩磁比R,降低矫顽力Hc。Bi2O3掺量为1.5%(质量分数)的样品具有较好的综合性能,表观密度d为4.72g/cm3,饱和磁化强度4πMs为2.3T,剩磁比R为0.853,矫顽力Hc为2.3×102 A/m。     

高频高直流迭加Mn-Zn铁氧体材料的性能

高工作频率、低损耗和高直流迭加磁芯是决定电子器件体积和性能的主要因素。在开发出DMR50材料的基础上,采用低温烧结技术,用传统的陶瓷法工艺制备了可使用至3MHz的低功耗高直流迭加Mn-Zn铁氧体材料DMR50B。在3MHz,10mT和100℃时材料的功耗在200kW/m3左右,在700kHz,30mT和100℃时只有20kW/m3左右。材料在100℃时的Bm=430 mT,HDC=100A/m。材料的截止频率fr在4MHz左右,与用斯诺克定律计算出的结果相符合,并可用晶界模型解释。材料优异的性能是由其小于单畴临界尺寸3.8μm的均匀细晶粒结构(D=2.40μm)决定的。     

微波电介质陶瓷的制取与研究

以（Mg0.8Zn0.2）TiO,（MZT）为原料,采用加入高电介质材料Ba4Nd28/3T18O54zBi2O3（BNT）制备微波电介质陶瓷0．7（Mg08Zn02）T103·0．3{Ba4Nd2Ⅳ3Ti18054·zBi203I（z=0．15,0．18,0．2）,以提高MZT的介电性能。掺入Bi3＋可以降低烧结温度,从而可以在低烧结温度（（1200-1230％）下制取MZT和BNT的合成材料。通过对介电性能、密度、XRD和SEM测试所获得的陶瓷可以发现,掺入Bi3＋数量的多少和结烧温度的高低会影响到陶瓷的结构和性能,结果说明,当z=0．18,0．7（Mgn8znn2）Ti03·0．3{Ba4NdzsnTil8054·zBi203}的结烧温度为1230℃时,可以获得很好的介电性能：εr=35．56,Qf=5811GHz,TF=-3．225ppm／℃。     

精矿粉和Mn3O4制备MnZn功率铁氧体工艺研究

为了降低功率铁氧体的制备成本,采用传统氧化物陶瓷工艺,用精铁矿粉代替Fe2O3、用Mn3O4代替MnCO3制备出高性能功率软磁MnZn铁氧体.研究了精铁矿粉和Mn3O4制备MnZn铁氧体的固相反应及预烧温度、烧结温度和掺杂对样品磁性能的影响.实验结果表明:精矿粉经氧化生成的α-Fe2O3立即与Mn3O4反应生成MnZn铁氧体,使固相反应更完全;预烧温度为1100℃,烧结温度为1240～1280 ℃时样品性能最佳;适当的掺杂可降低样品的功耗.样品最佳性能如下:μi=2268;Bs=508 mT;Tc=227℃;Po=34.5 W/kg,综合性能达到日本TDK PC30材料性能水平.     

掺CaO-B2O3-SiO2玻璃烧结制备MnZn铁氧体及其磁性能

采用传统陶瓷工艺制备了CaO-B2O3-SiO2(CBS)玻璃掺杂的MnZn铁氧体.研究了CBS玻璃掺入量及烧结温度对MnZn铁氧体的烧结特性及磁性能的影响.结果表明:样品的密度随着CBS掺入量的增加而不断减小,磁性能随着温度的升高而不断增强;掺入适量CBS可在烧结时形成液相,使固体颗粒间产生液相烧结并促进晶粒的长大....     

缺铁YCaZrVIG铁氧体的电磁性能

用传统氧化物法制备了缺铁组分为Y2.3Ca0.7Zr0.3V0.2Fe4.5-δO12（缺铁量δ=0.05）的石榴石铁氧体（YCaZrVIG）,用XRD、SEM对样品进行物相和微结构表征。研究了烧结温度对YCaZrVIG铁氧体物相组成、烧结性能、微观结构及电磁性能的影响。结果表明,烧结后的YCaZrVIG铁氧体为单相的...     

ZnO掺杂对Ca0.25(Li0.43Sm0.57)0.75TiO3陶瓷烧结性能和微波介电性能的影响

采用溶胶-凝胶法制备Ca_0.25(Li_0.43Sm_0.57)_0.75TiO₃(CLST)微波介质陶瓷纳米粉体, 研究了ZnO掺杂量和烧结温度对CLST+ xmol% ZnO陶瓷烧结性能和微波介电性能的影响。XRD分析结果表明: 随着ZnO掺杂量x的增加, 陶瓷的晶体结构从正交相变为伪立方相, 并在x≥1.5的样品中出现了杂相。CLST+ xmol% ZnO陶瓷的致密化烧结温度随x的增加而降低, x=1.0的样品的致密化烧结温度比x=0的降低了200 ℃。介电常数ε_r和频率品质因数Qf 随x增加和烧结温度的升高具有最优值, 频率温度系数则单调降低。x=1.0的样品在1100 ℃烧结时具有优异的综合性能: ρ = 4.85 g/cm³, ε_r =102.8, Qf = 5424 GHz, τ_f = -8.2×10^-6/℃。表明ZnO掺杂的CLST陶瓷是一种很有发展潜力的微波介质陶瓷。     

Bi-Mo复合掺杂对MgCuZn铁氧体烧结特性和磁性能的影响

为改善MgCuZn铁氧体的低温烧结特性并提高其软磁性能, 采用传统氧化物法制备MgCuZn铁氧体材料, 研究了Bi-Mo复合掺杂对其烧结特性和软磁性能的影响. 结果表明: 复合掺杂Bi₂ O₃和MoO₃适量时(分别为0.6wt％和0.1wt％), 在较低的烧结温度(1020℃)就能获得较高的烧结密度(<4.75g/cm³), 起始磁导率可达1240, 且具有较高的品质因数(100kHz下为33.8). 通过主成分优选、有效的掺杂技术及工艺条件可以提高MgCuZn铁氧体的综合性能, 使其可应用于多层片式电感中.     

掺杂Co_2O_3对ZnTiO_3陶瓷介电性能的影响

研究了掺杂Co2O3对ZnTiO3陶瓷的微观结构与介电性能的影响。结果表明,掺杂的Co2O3在高温下分解生成Co2+进入ZnTiO3晶格形成(CoxZn1-x)TiO3固溶体,有效阻止了其分解为立方尖晶石相和金红石相。当Co2O3掺杂量为x=0.1,烧结温度1050℃时,陶瓷具有优良的微波介电性能和体积密度:ε=29.8,Q=4660(f=10GHz),τf=-60×10-6/℃,ρ=5.11g/mm3,并形成稳定、完全致密化的介电陶瓷组织结构。     

Microstructures and room temperature mechanical properties of NiAl prepared by high pressure reaction sintering

The microstructures and room temperature compressive mechanical properties of a nearstoichiometric NiAl manufactured by a new high pressure reaction sintering (HPRS) process are investigated. Applying a very high uniaxial pressure (2 GPa) leads to considerable lowering of the sintering temperature and reducing the hold time gives NiAl with a good sintering density. The HPRS NiAl consists of -NiAl with a B2 structure containing a high density of dislocations, 3.5×10⁹ cm^–2, and very fine Al₂O₃ particles. The NiAl exhibits quite high true compressive strain, 14.5%, and a reasonably high yield strength, 526 MPa. The effects of employing the high pressure in the HPRS process on the reaction sintering, microstructures and mechanical properties of the NiAl are studied.     

Low-firing and microwave dielectric properties of Ba[(Ni0.6Zn0.4)0 .33Nb0.67]O3 ceramics doped with Sb2O5 and B2O3

The purpose of this study was to reduce the sintering temperature of Ba[(Ni0.6Zn0.4)0.33Nb0.67]O3 ceramics by doping with Sb2O5 and B2O3. Phase formation and dielectric properties were analyzed using X-ray diffraction and the post resonator method (10 GHz), respectively. It was observed that an addition of 1 mol % Sb2O5 or 1 mol % B2O3 was very effective in reducing the sintering temperature from 1500 to 1300 °C. However, these samples showed a temperature coefficient of resonant frequency far from 0 ppm/°C. The two additions produced a temperature coefficients with opposite signs. The combination of the two dopants produced a temperature coefficient very close to 0 ppm/°C as well as a better quality factor.     

放电等离子烧结技术制备Fe78Si13B9块体非晶纳米晶磁性材料

通过高能球磨技术制备了Fe₇₈Si₁₃B₉磁性非晶合金粉体,采用XRD和DSC分析了Fe₇₈Si₁₃B₉非晶合金粉体的相组成、玻璃转变温度T_g、开始晶化温度 T_x 和晶化峰温度T_p;利用放电等离子烧结（SPS）技术在不同烧结温度下制备了块体磁性非晶纳米晶合金试样,利用XRD、SEM、Gleeble3500、VSM等分析了不同烧结温度下烧结块体试样的相转变特性、微观形貌、力学性能和磁学性能。结果表明,在500 MPa的烧结压力下,随着烧结温度的升高,烧结试样中的非晶相开始逐渐晶化,烧结试样的致密度、抗压强度、微观硬度、饱和磁化强度均显著提高;在500 MPa的烧结压力和823.15 K的烧结温度下,获得了密度为6.6 g/cm³,抗压强度为1500 MPa,饱和磁化强度为1.3864 T的非晶纳米晶磁性材料。     

The influence of copper doping on the electrical properties of magnetic semiconducting Cd1−xFexCr2S4 single crystals

The Curie temperature and the dependence of the resistivity on the magnetic flux density and on the temperature of Cu-doped p-type Cd_1?xFe_xCr₂S₄ single crystals have been measured.The Curie temperature is not affected by the doping in spite of the considerably higher electrical conductivity of the doped samples. The dependence of the resistivity on the magnetic flux density (B ≤ 1 Vs/m²) has a behaviour similar to that of n-type CdCr₂Se₄: In, reported earlier /1/. At low iron content, the negative magnetoresistance is enhanced by the copper doping; at high iron content, the magnetoresistance is diminished by the doping. The results are discussed on base of the model of “magnetic impurity states” due to Fe²⁺ states.     

Microstructural Development and Mechanical Properties of PM Ti-45Al-2Nb-2Mn-0.8 vol.%TiB_2 Processed by Field Assisted Hot Pressing

A γ-TiAI intermetallic alloy, Ti-45Al-2Nb-2Mn （at.%）-0.8 vol.%TiB2, has been processed from gas atomized praalloyed powder by field assisted hot pressing （FAHP）. An initial analysis of the prealloyed powder helped on the understanding of the intermetallic sintering behavior. Atomized powder consisted of α metastable phase that transformed into α2＋γ equilibrium phases by thermal treating. Different powder particle microstructures were found, which influence the microstructure development of the FAHP T-TiAI material depending on the sintering temperature. Duplex, nearly lamellar and fully lamellar microstructures were obtained at the sintaring temperatures above 1000 ℃. Lower consolidation temperatures, below 1000 ℃, led to the formation of an AI rich phase at powder particle boundaries, which is deleterious to the mechanical properties. High compressive yield strength of 1050 MPa was observed in samples with FAHP duplex microstructures at room temperature. Whereas nearly lamellar and fully lamellar microstructures showed yield strength values of 655 and 626 MPa at room temperature and 440 and 425 MPa at 750 ℃, respectively, which are superior in comparison to similar alloys processed by other techniques. These excellent properties can be explained due to the different volume fractions of the α2 and γ phases and the refinement of the PM microstructures.