图形化蓝宝石衬底结构对GaN基LED发光性能的影响

为了研究图形化蓝宝石衬底(PSS)的结构和形貌对GaN基发光二极管(LED)光学性能的影响,对PSS的制备工艺和参数进 行了调控,从而 形成具有不同填充因子的蒙古包形PSS(HPSS)和金字塔形PSS(TPSS)两种衬底,用于生长 和制备蓝光LED 芯片。通过对TPSS-LED的光学性能测试和分析得到,随着PSS填充因子的增大, LED的 光输出功 率也增大;进而比较具有相同填充因子的HPSS和TPSS的光学性能表明,HPSS明显优于TPSS。 因此, PSS填充因子的增大,能够提高LED的光输出功率;优化PSS的结构可以改善LED中光出射途径 ,从而更有效提高LED的光发射效率。     

拉伸工艺对PVDF薄膜形貌与结构的影响

聚偏二氟乙烯(PVDF)薄膜中,β相的相对含量对其压电、铁电性能起决定性作用。利用单轴拉伸工艺制备了高β相的相对含量的PVDF薄膜,运用XRD、SEM和FT-IR等测试手段,分析了拉伸过程中PVDF薄膜形貌与结构的变化,重点讨论了不同拉伸比R对薄膜微观结构及β相的相对含量的影响。结果表明:PVDF薄膜中的α晶相受均匀外力作用转变成β晶相,在80℃下拉伸5倍时,薄膜中β相的相对含量可高达77%。     

酱油曲霉多育现象的扫描电镜观察

本研究用扫描电镜观察了酱油曲霉菌体。此菌分生孢子头上的一些瓶梗可以延长形成次生分生孢子梗,再从其上形成次生分生孢子头。     

Effects of microwave-assisted annealing on the morphology and electrical performance of semiconducting polymer thin films

Organic field-effect transistors (OFETs) based on p-channel polymer semiconductors such as poly(3-hexyl)thiophene (P3HT) and 30-diketopyrrolopyrrole-selenophene vinylene selenophene (30-DPP-SVS) were fabricated using a microwave (MW) irradiation process for thermal annealing. The influence of MW annealing was investigated based on microstructural characterizations such as X-ray diffraction (XRD) and atomic force microscopy (AFM). MW annealing not only shortened the annealing time, but also produced enhanced device performance including higher on/off ratio, lower threshold voltage, and higher field-effect mobility in comparison with the traditional annealing method. These microstructural analyses revealed that annealing by MW irradiation enhances the crystallinity and molecular orientation in the polymer thin films in a short time, thereby improving the electrical performance effectively. Our results suggest that MW-assisted annealing is a simple and viable method for enhancing OFET performance.     

Effects of ovariectomy on bone morphology in maxillae of mature rats.

Postmenopausal oestrogen deficiency results in bone loss (osteoporosis) in humans and experimental animals. The loss of trabecular bone in the ovariectomized (OVX) rat provides a useful experimental model of post-menopausal osteoporosis. At 5 months after ovariectomy of 3-month-old female rats, the mid and distal femurs and maxillae were dissected and processed for quantitative backscattered electron microscopic examinations. Histomorphometric analysis of femurs in OVX rats showed significant loss in metaphyseal trabecular bone areas compared with sham-operated controls; no significant bone loss was observed in the cortical bone areas of mid-diaphyses in OVX rats. Net bone areas in the maxillae of OVX rats was similar to that of sham-operated controls. Bone structure of maxillae in OVX rats was also similar to that in controls. Our results suggest that, in this animal model of osteoporosis, prominent bone loss occurs mainly in the bone areas formed by endochondral ossification such as distal femurs, but those areas formed by intramembranous ossification such as mid-femurs and maxillae sustained less effects by OVX.     

氧化还原反应条件对二氧化锰粉体晶型和形貌的影响

采用氧化还原沉淀法,以KMnO_4和MnSO_4为原料制备了二氧化锰粉体。利用XRD和FESEM对样品的组成和形貌进行分析,研究了氧化还原反应条件对二氧化锰晶型和形貌的影响,并对晶型转变机理进行了讨论。结果表明,改变工艺参数,可以制备出纳米球花状的δ型、纳米线状的α型和纳米颗粒状的γ型MnO_2粉体。不同产物的晶型主要受K~+浓度的影响,而反应温度与反应时间是次要影响因素。其中,当KMnO_4与MnSO_4的摩尔比为2:1.5和2:3时,MnO_2粉体分别为δ型和α型,而当摩尔比为小于2:3时,MnO_2粉体转变为γ型;当反应温度为40,60,80℃时,MnO_2粉体均为γ型,而当温度升高至90℃时,MnO2粉体变为α型;当反应时间为0.5和1h时,MnO_2粉体分别为δ型和γ型,当反应时间超过2h时,MnO_2粉体则变为α型。     

锡掺杂对碲化镉多晶薄膜形貌和光学性能的影响

Sn-doped CdTe polycrystalline films were successfully deposited on ITO glass substrates by close space sublimation. The effects of Sn-doping on the microstructure, surface morphology, and optical properties of polycrys- talline films were studied using X-ray diffraction, scanning electron microscopy, and ultraviolet-visible spectrophotometry, respectively. The results show that the lower molar ratio of Sn and CdTe conduces to a strongly preferential orientation of （111） in films and a larger grain size, which indicates that the crystallinity of films can be improved by appropriate Sn-doping. As the molar ratio of Sn and CdTe increases, the preferential orientation of （111） in films becomes weaker, the grain size becomes smaller, and the crystal boundary becomes indistinct, which indicates that the crystallization growth of films is incomplete. However, as the Sn content increases, optical absorption becomes stronger in the visible region. In summary, a strongly preferential orientation of （111） in films and a larger grain size can be obtained by appropriate Sn-doping （molar ratio of Sn ： CdTe = 0.06 ： 1）, while the film retains a relatively high optical absorption in the visible region. However, Sn-doping has no obvious influence on the energy gap of CdTe films.     

Effects of Sn-doping on morphology and optical properties of CdTe polycrystalline films

Sn-doped CdTe polycrystalline films were successfully deposited on ITO glass substrates by close space sublimation. The effects of Sn-doping on the microstructure, surface morphology, and optical properties of polycrystalline films were studied using X-ray diffraction, scanning electron microscopy, and ultraviolet-visible spectrophotometry, respectively. The results show that the lower molar ratio of Sn and CdTe conduces to a strongly preferential orientation of (111) in films and a larger grain size, which indicates that the crystallinity of films can be improved by appropriate Sn-doping. As the molar ratio of Sn and CdTe increases, the preferential orientation of (111) in films becomes weaker, the grain size becomes smaller, and the crystal boundary becomes indistinct, which indicates that the crystallization growth of films is incomplete. However, as the Sn content increases, optical absorption becomes stronger in the visible region. In summary, a strongly preferential orientation of (111) in films and a larger grain size can be obtained by appropriate Sn-doping (molar ratio of Sn : CdTe = 0.06 : 1), while the film retains a relatively high optical absorption in the visible region. However, Sn-doping has no obvious influence on the energy gap of CdTe films.     

衬底负偏压对Ni-Mn-Ga形状记忆薄膜成分及形貌的影响

采用能谱仪(EDS)和原子力显微镜(AFM)对不同衬底负偏压下射频磁控溅射法制备的Ni-Mn-Ga形状记忆薄膜进行了成分和形貌的分析.研究发现:当衬底负偏压在5～30V范围变化时,薄膜中的Ni含量随偏压的增加呈先减少后增加的趋势,在偏压为10V时,达到最小值52.84％(摩尔分数,下同).Ga含量的变化趋势恰好与Ni相...     

Effects of flash EEPROM floating gate morphology on electricalbehavior of fast programming bits

The effects of Flash EEPROM Floating Gate morphology on the generation and density of fast programming bits on a 2-MBit Flash EEPROM array has been characterized. These fast programming bits exhibit identical subthreshold characteristics similar to that of a normal bit after UV-erase, thus establishing that the initial charge stored on the floating gate of both fast and normal bit is the same. This clearly indicates that the fast programming phenomena result from an interaction of the programming process and the floating gate. An in depth experimentation reveals that the floating gate poly deposition and doping process are crucial for controlling the desired Fowler-Nordheim (FN) tunneling. A correlation is established between the fast bit density observed in the 2-MBit array, the FN tunneling currents, the floating gate deposition and doping processes. The fast programming bit threshold voltage distribution and density can be modulated with the floating gate deposition and doping processes     

氧气浓度对ZnO薄膜表面形貌和微结构的影响

采用反应磁控溅射技术,在SiO2基底上制备了ZnO薄膜。通过原子力显微镜(AFM)和X射线电子能谱仪(XPS)对薄膜表面形貌及微结构进行了表征,分析了氧气之体积分数φ(O2)为40%~60%时,对薄膜表面形貌和微结构的影响。结果表明:随着氧气体积分数的增大,薄膜c轴晶向生长减弱,表面形貌趋向平整,氧化反应程度增强;?(O2)为60%时,薄膜表面粗糙度约为3nm,其内部的r(Zn:O)接近1:1。     

弱脉冲低频磁场对大鼠记忆、脑电及脑组织形态学的影响

低频脉冲磁场在促进骨折愈合、改善血流变、预防深静脉血栓、脊髓损伤及脑创伤修复等方面不断有研究报道；与此同时，对脉冲磁的生物效应保持审慎态度的研究工作仍在继续。本文选择清醒态相似频率（15Hz）弱脉冲磁场长时程作用于实验大鼠顶骨外2mm，从行为、电生理和形态学多方面探讨低频脉冲磁场的影响。     

Effects of intermetallic morphology at the metallic particle/solder interface on mechanical properties of Sn-Ag-based solder joints

Mechanical incorporation of metallic particles in the Sn-Ag-based solder resulted in various intermetallic compound (IMC) morphologies around these particles during reflow. Unlike with the Ni particles, the IMCs formed around Cu and Ag particles are relatively insensitive to reflow profiles employed. The IMC formed around the Ni particles ranges from “sunflower” morphology to “blocky” morphology with increasing time and temperature above liquidus during the heating part of the reflow profile. Mechanical properties, such as simple shear strength and creep behavior, of these composite solders were affected by the IMC morphologies in the composite solders investigated. Sunflower-shaped IMC formed around an Ni particles resulted in higher simple shear strength and better creep properties.     

退火温度对ZnO纳米线阵列形貌、结构和光学特性的影响

为获得高质量的良好取向和低成本的ZnO纳米 线阵列,利用化学浴沉积法,在石英玻 璃基底上制备ZnO纳米线阵列,在Ar气气氛中对ZnO纳米线阵列分别进行400和800℃的退火 1h处理,利用场发射扫描电子显微镜(FESEM)、X射线衍射仪(XRD)、紫外-可见分光光度 计和荧光光谱仪 分别研究了它们的形貌、晶相结构和光学特性。结果显示,退火处理后,ZnO纳米线平均直 径有所增加, ℃退火后,相邻ZnO纳米线产生粘结。随着退火温度增加,Z nO纳米线阵列的结晶质量逐渐提高,退 火至600℃时,其结晶质量最佳;在可见光区的光学透过率和光学带 宽随退火温度增加而下降。未退 火和退火400℃的ZnO纳米线阵列,仅在390n m波长处附近出现一个很弱的近带边发射峰, 当退火温度在600℃以上时,近带边发射峰迅速增强,并出现一个较 弱绿色发光带。     

Investigation of carbon incorporation in znse: Effects on morphology,electrical, and photoluminescence properties

Observations of carbon incorporation in epitaxial ZnSe films grown by metalorganic chemical vapor deposition are presented. Carbon is detected by secondary ion mass spectroscopy (SIMS) measurements in all ZnSe films grown from methylallylselenide and dimethylzinc. The presence of carbon in the films is correlated with a new bound excitonic emission appearing at 2.7920 eV which dominates the near-band-edge low-temperature photoluminescence spectra of all carbon contaminated films. This peak is also observed when growth is commenced from diethylselenide, under certain growth conditions, but not from hydrogen selenide. The effect of the carbon contamination is discussed in terms of variations in surface morphology, electrical and luminescence properties of as-grown films. Control of the carbon concentration is demonstrated by alternating between hydrogen selenide and methylallylselenide during growth. Strategies to avoid carbon contamination in ZnSe are also proposed. Author to whom correspondence should be addressed     

药用肉苁蓉花粉的形态观察研究

目的:对《中国药典》规定的2种肉苁蓉的花粉进行形态学研究,为肉苁蓉属植物的分类鉴别建立实验依据.方法:采用扫描电镜观察荒漠肉苁蓉和管花肉苁蓉的花粉形态并进行测量.结果:两种肉苁蓉的花粉粒在形状、萌发孔及外壁纹饰等方面具有其各自特殊的形态结构特征.结论:孢粉学研究可作为鉴别肉苁蓉属植物的分类鉴别依据.     

未溶微合金碳氮化物形貌及成分的研究

复合添加微合金元素和控轧控冷技术在生产高强度低合金钢方面已经得到广泛的应用。特别是各阶段轧制过程中Nb、Ti碳氮化物的尺寸、数量与分布等对钢的力学性能有重要的影响。为此，作者对加热阶段钢中未溶颗粒的形貌及成分进行了研究。     

薄膜形貌的AFM观察

八十年代末九十年代初发展起来的纳米科学技术已成为倍受科技界关注和重视的热门领域,被认为是面向二十一世纪的新科技。而基于扫描隧道显微镜(STM)基本原理而发展起来的一系列扫描探针显微镜(SPM)无疑为纳米科技的诞生与发展起到根本性的推动作用,同时纳米科技的发展又将为SPM的应用提供广阔的天地。AFM探测的是针尖与被测样品间原子之间的相互作用力,不受样品导电性的影响,其研究对象几乎不受任何局限,因此较STM得到更广泛的应用。与常规显微镜相比,SPM的优点还体现在它可在大气条件下以高倍率观察样品表面,可用于几乎任何样品,而…     

Effects of etching conditions on surface morphology of periodic inverted trapezoidal patterned Si(100) substrate

In this paper, the anisotropic etching process of Si(100) wafers in tetramethyl ammonium hydroxide (TMAH) solution with isopropyl alcohol (IPA) is investigated in detail. An inverted trapezoidal pattern is developed. A series of experiments are performed by changing TMAH concentration, IPA concentration, etching temperature and etching time. The structure of inverted trapezoidal patterns and roughness of the bottom surface are characterized by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The results show that with TMAH concentration increases, the roughness of bottom surface will decrease. The addition of IPA into TMAH solution improves the morphology of the bottom surface significantly. Low temperature is beneficial to get a smooth bottom surface. Furthermore, etching time can change the bottom surface roughness. A model is proposed to explain the etching processes. The hillock area ratio of the bottom surface has the same tendency as the etching area ratio. Finally, smooth silicon inverted trapezoidal patterns are obtained for epitaxial growth of GaN-based light emitting diode (LED) devices.     

榛属植物花粉形态扫描电镜观察

目的:为榛属植物的系统分类学提供孢粉学证据,明确榛属植物花粉形态特征及其与品种分类、系统进化的关系.方法:采用一致的方法培育植物材料并收集花粉,以14份不同种(品种)的榛属植物花粉为材料,使用FAA固定液固定,二氧化碳临界点干燥法处理花粉,在扫描电子显微镜下观察花粉的形状、大小、萌发孔距、萌发孔径比和表面纹理等指标,并进行聚类分析.结果:榛属植物的花粉为单粒花粉,多为3萌发孔,萌发孔分布在赤道面上,属于N3 P4 C4类型;花粉形状为近扁球形,极面观为三角形,赤道面观为椭圆形,花粉外壁纹饰为皱波状和刺状,不同种(品种)的花粉在大小、皱波明显度、刺的大小和密度上存在差异;对上述指标进行聚类分析,将14份样品聚为3类.第1类:华榛、绒苞榛、川榛、'辽榛3号'、'达维'、'Casina'和'Ennis',属于中等大小花粉,皱波不明显;第2类:平榛'JMS'、'HLP'、'WC'和毛榛,花粉表面皱波不明显,刺较小且致密;第3类:藏刺榛、'Maria'和'辽榛7号',花粉表面皱波明显,刺的分布密度较疏.结论:榛属植物的花粉在大小、外壁皱波纹饰、刺的大小和密度方面差异较大,可为榛属植物的种属分类和品种鉴定提供孢粉学依据;本研究的取样和实验方法也可为其他相关研究提供参考.