Bi4Ti3O12掺杂中温烧结(Ba,Sr)TiO3基电容器陶瓷

研究了Bi4Ti3O12掺杂量(≥8%,质量分数)对(Ba,Sr)TiO3(Barium Strontium Titanate,BST)铁电电容器陶瓷介电性能的影响,得到不同Bi4Ti3O12掺杂量与BST陶瓷性能的关系,得到中温烧结(≤1150℃)、高压(≥6.99MV/m)、低损耗(0.008)、符合X7R特性的多层陶瓷电容器瓷料.借助扫描电镜(SEM)研究了Bi4Ti3O12对BST陶瓷微观结构的影响,探讨了Bi4Ti3O12掺杂量对BST陶瓷性能和结构影响机理.结果表明:Bi4Ti3O12是通过与BST形成核-壳结构、形成玻璃相、偏析晶界及抑制晶粒生长、改善介温特性等来影响瓷料性能和结构的.这些结果为Bi4Ti3O12掺杂改性BST电容器陶瓷提供一定的依据.     

Nb/Co比对钛酸钡锶电容器陶瓷性能的影响

研究了Nb2O5/Co2O3摩尔比(简称Nb/Co比,下同)对(Ba,Sr)TiO3(Barium Strontium Titanate,BST)铁电电容器陶瓷介电性能的影响,得到不同Nb/Co比与BST陶瓷性能的关系.借助扫描电镜(SEM)研究Nb/Co比对BST陶瓷微观结构的影响,采用X射线衍射(XRD)分析了BST陶瓷物相组成,探讨了Nb/Co比对BST陶瓷性能影响的机理.结果表明当Nb/Co比为1.1,可得到满足X7R特性、介电常数为2449、耐压为5 MV/m以上综合性能好的BST陶瓷.Nb/Co比增大对BST陶瓷性能的影响是通过阻止晶粒生长、致密化、(适当增加Nb/Co比能细晶化、过量增加Nb/Co比导致少量晶粒异常长大、)宽化介电常数温度曲线、改善介电常数温度特性、减少介电常数、形成杂相、形成"晶核-晶壳"结构等进行.通过研究获得高介高压高稳定电容器陶瓷.     

Nb/Co比对钛酸钡锶电容器陶瓷性能的影响

研究了Nb2O5/Co2O3摩尔比(简称Nb/Co比,下同)对(Ba,Sr)TiO3(Barium Strontium Titanate,BST)铁电电容器陶瓷介电性能的影响,得到不同Nb/Co比与BST陶瓷性能的关系.借助扫描电镜(SEM)研究Nb/Co比对BST陶瓷微观结构的影响,采用X射线衍射(XRD)分析了BST陶瓷物相组成,探讨了Nb/Co比对BST陶瓷性能影响的机理.结果表明:当Nb/Co比为1.1,可得到满足X7R特性、介电常数为2449、耐压为5 MV/m以上综合性能好的BST陶瓷.Nb/Co比增大对BST陶瓷性能的影响是通过阻止晶粒生长、致密化、(适当增加Nb/Co比能细晶化、过量增加Nb/Co比导致少量晶粒异常长大、)宽化介电常数温度曲线、改善介电常数温度特性、减少介电常数、形成杂相、形成"晶核-晶壳"结构等进行.通过研究获得高介高压高稳定电容器陶瓷.     

添加玻璃料对BaSm_2Ti_4O_(12)微波介质陶瓷烧结行为和介电性能的影响

利用固相法制备BaSm_2Ti_4O_(12)(BST)微波介质陶瓷.研究了复合添加Li_2CO_3-B_2O_3-SiO_2-CaO-Al_2O_3(LBSCA)和BaO-B_2O_3-SiO_2(BBS) 玻璃料对BaSm_2Ti_4O_(12)微波介质陶瓷的烧结性能、介电性能、相组成和微观结构的影响.研究表明:复合掺杂10% LBSCA和2%～5% BBS可使烧结温度降至900 ℃.XRD分析表明复合掺杂两种玻璃料的BST陶瓷主晶相为BaSm_2Ti_4O_(12)相,玻璃料以玻璃相的形式存在陶瓷晶粒间.复合掺杂10% LBSCA+3%BBS玻璃料的BST陶瓷可在900 ℃、保温2 h条件下烧结致密,微波介电性能为:ε_r =55.63,Q_f = 4266 GHz,τ_f= -13.5×10~(-6)℃~(-1),这种陶瓷材料有望与纯Ag电极共烧,制作各种多层微波频率元器件.     

Ce掺杂0.9Bi4Ti3O12 - 0.1K0.5Na0.5NbO3铋层状陶瓷结构与性能研究

采用传统固相法制备了CeO2掺杂0.9Bi4Ti3O12–0.1K0.5Na0.5NbO3(BTO-KNN) 铋层状陶瓷材料。系统研究了CeO2掺杂对BTO-KNN基陶瓷物相结构、微观结构以及电性能的影响. 结果表明：所有陶瓷样品均为单一的铋层状结构;BTO-KNN基陶瓷的压电性能随着CeO2的掺杂而显著提高,损耗明显降低。当CeO2掺量为0.75 wt% 时,样品具有最佳的电性能: d33=28 pC/N,介电损耗tan δ=0.29%,机械品质因数Qm = 2897,剩余极化强度Pr = 11.83 μC/cm2,且居里温度 Tc 高达615 ℃;研究结果表明CeO2掺杂0.9Bi4Ti3O12–0.1K0.5Na0.5NbO3铋层状陶瓷是种潜在的高温陶瓷材料。     

Bi掺杂对Ba_(6-3x)La_(8+2x)(Ti_(0.95)Zr_(0.05))_(18)O_(54)(x=2/3)陶瓷的烧结性能和介电性能的影响

采用传统固相反应法制备Ba6-3x(La1-mBim)8+2x(Ti0.95Zr0.05)18O54(x=2/3)微波介质陶瓷,研究Bi掺杂对Ba6-3xLa8+2x(Ti0.95Zr0.05)18O54(x=2/3)陶瓷的烧结性能、微观结构以及介电性能的影响。结果表明:当0m0.4时,Bi3+取代A1位的La3+生成单相类钨青铜型固溶体;当Bi3+的掺杂量超过这个范围时,La0.176Bi0.824O1.5作为第二相出现在固溶体中;Bi3+的掺入使Ba6-3xLa8+2x(Ti0.95Zr0.05)18O54(x=2/3)陶瓷的烧结温度从1400℃降低到1300℃,同时,其介电常数大幅度提高,谐振频率温度系数减小,但品质因数急剧减小;当m=0.05时,1350℃下保温2h烧结获得的陶瓷具有微波介电性能,εr=88.63,Q·f=4395GHz,τf=6.25×10-6/℃。     

添加KNN和BBS对BaTiO3陶瓷微结构和介电性能的影响

采用固相法制备添加K0.5Na0.5NbO3(KNN)和BBS玻璃(BBS)的BaTiO3电容器陶瓷。借助X射线衍射仪、扫描电镜和阻抗分析仪研究掺杂对晶体结构、微观组织及介电性能的影响。结果表明:单独添加KNN的样品呈单一的钙钛矿结构。随KNN的增加,陶瓷样品高温端的电容变化率减小。掺杂3%~5%KNN(摩尔分数)陶瓷满足X7R特性。掺杂1%BBS(质量分数)对含3%KNN(摩尔分数)陶瓷的晶体结构无影响。BBS超过3%(质量分数)时,有第二相Bi4B2O9和BaTi5O11生成。1 100℃烧结掺杂3%BBS(质量分数)和1%KNN(摩尔分数)的BaTiO3陶瓷具有中等介电常数(1 045),低的介电损耗(0.74%)和较高的体积电阻率(5.5×1011.cm),在55、125和150℃的电容变化率分别为6.6%、1.7%和13.2%,有望用于中温制备的X8R型多层陶瓷电容器。     

片式多层微波器件用Ca[(Li0.33Nb0.67)0.8Ti0.2]O3-δ微波介质陶瓷的制备

研究了烧结助剂Bi2O3对添加锌硼硅玻璃的Ca[(Li0.33Nb0.67)0.8Ti0.2]O3-δ陶瓷烧结特性、微观结构和介电性能的影响,分析了该陶瓷与银电极的共烧行为.结果表明随着Bi2O3添加量增加,陶瓷体气孔含量减少,体密度和介电常数εr增加,而品质因数Q×f值下降,频率温度系数τf由正值变为负值.添加7.5%(质量分数)锌硼硅玻璃和3.0%(质量分数)Bi2O3的陶瓷样品在900℃烧结,其介电性能εr=36.73,Q×f=10 396GHz(336GHz),τf=-3.27×10-6/℃.陶瓷与银电极共烧界面结合状况良好,无明显扩散.该材料可用于制造片式多层微波器件.     

镧掺杂(Na0.5Bi0.5)TiO3压电陶瓷的结构与性能

采用传统陶瓷工艺制备了镧掺杂(Na0.5Bi0.5)TiO3无铅压电陶瓷,研究了材料的结构、介电和压电性能.发现镧掺杂有利于生成稳定的钙钛矿结构,促进了晶粒生长.镧掺杂(Na0.5Bi0.5)TiO3陶瓷表现出明显的弛豫特性,当镧掺杂量为5mol%时,1200℃烧结样品室温下的介电常数从630提高到855,介电损耗从5.2%减小到3.3%.适量的镧掺杂大幅降低了材料的电导率,最佳的掺杂量为1 mol%,测量温度为75℃时,该配方1200℃烧结样品的电导率σ仅为7.75148×10-13S·cm-1,同掺杂前的9.50827×10-11 S·cm-1前相比减小了3个数量级.     

Bi3+离子取代对Ba6-3xLn8+2xTi18O54陶瓷结构与微波介电性能的影响

研究了Bi3+取代Ln3+对Ba6-3xLn8+2XTi18O54(LnSm,Nd)固溶体陶瓷的结构与微波介电性能的影响规律.对于Ba4[(Sm1-yNdy)1-zBiz]9 33Ti18O54,Bi3+取代对晶粒生长有促进作用,且使介电常数提高,但使Q·f值降低.xRD分析表明,对于y=0.2,当Bi3+的取代量z≤0.06时,材料保持类钙钛矿钨青铜单相结构,而当取代量较多时,类钙钛矿结构失稳,转变为(BiSm)2TiO7第二相,而对于y=0.7,则在Bi取代量达0.20时仍能保持单相钨青铜结构.且当z=0.10时,可获得优化的介电性能为ε=90.2,Q·f=9090GHz,τf=8.7×10-6/℃.     

Thermodynamic analysis of the CsNO3-KNO3-NaNo3 system

The thermodynamic properties of the CsNO₃-KNO₃-NaNO₃ system have been derived from an optimization procedure using experimental and published information concerning phase diagram and thermodynamic data for the constituent binary systems and ternary liquid phase. The results are in very close agreement with the experimental data.     

Phase diagrams of binary systems: AgNO3KNO3 and AgNO3 -@#@ NaNO3

AgNO₃-KNO₃ and AgNO₃-NaNO₃ phase diagrams were drawn using a simultaneous thermal analysis technique in the range 373 to 623 K. The apparatus is described briefly. Figure 1 shows a continuous solid solution in equilibrium with the liquid phase. It exhibits a eutectoid mixture (20 mol% NaNO₃) at 380.7 K. Figure 2 shows a eutectic mixture (45 mol % KNO₃) at 413 K, a eutectoid mixture (20 mol % KNO₃) at 409 K, and a continuous invariant at 404 K.     

3-D or not 3-D

When developing mathematical models of physical phenomena, physical scientists have been limited to two-dimensional solutions. In some cases, those solutions may be qualitatively correct, but in many others, the solutions are far from reality. This paper presents three examples of the limitations of two-dimensional modeling :diffusion-limited electrolytic reduction of a liquidproduct from a liquid electrolyte, morphological development of a solid dendrite, and behavior of a two-phase fluid under shear.     

三自由度并联机构（3SPS 3SRR）的位置分析

针对一种3SPS-3SRR并联机构,运用符号法对该机构进行位置分析建模及求解。构建动、静坐标系,通过矩阵转换对机构建立约束方程,运用Sylvester消元方法进行消元得到机构单变元输入输出方程,求得机构位姿的封闭解。最后进行实例求解,得到该机构处于一般姿态的32组实数解,并使机构处于特殊位姿,将所得封闭解与预估解对比,从而验证该位置求解模型的正确性。基于符号法的3SPS-3SRR并联机构位置分析模型具有准确、高效的特点,规避了基于数值法的诸多缺点,对该机构的深入分析具有重要理论意义及实用价值。     

GdF_3:Ce~(3+),Ln~(3+)(Ln~(3+)=Eu~(3+),Tb~(3+),Dy~(3+),Sm~(3+))纳米晶体的制备与发光性能研究

应用共沉淀法,制备共掺同一敏化剂(Ce3+)和不同激活剂(Tb3+,Eu3+,Sm3+,Dy3+)的GdF3纳米晶体。在单一波长(254nm)紫外光的激发下,掺杂不同镧系激活离子的样品能够发射出不同颜色的明亮可见发光,因而适用于多色生物标记。     

3

In this paper, a planning algorithm for multi-path/multi-layer circular locus is poposed. The algorithm is applied to weld the nipples on the header of boiler. Multi-path/multi-layer circular locus is planned according to three teaching points, which is lapped head-on-end to satisfy the requirement of technology. For the nipples wherever they are arranged radially or axially, even if there are errors caused by positioning and thermal deformations, providing that nipple's position and orientation relative to the teaching one can be measured, the multi-path/multi-layer circular locus can be planned without teaching any more. The algorithm has been applied in welding robot for manufacturing power station' boiler.     

Electronic structures of semiconducting FeGa3, RuGa3, OsGa3, and RuIn3 with the CoGa3- or the FeGa3-type structure

Electronic structure of FeGa₃, RuGa₃, OsGa₃ and RuIn₃ with the crystal structures belonging to the space group of P4n2 (No. 118), which is usually referred to as the CoGa₃-type structure, and P4₂/mnm (No. 136), which is usually referred to as the FeGa₃-type structure, have been calculated using a first-principle pseudopotential method based on the density-functional theory within the local density approximation (LDA) with the generalized gradient correction. All of them have the similar band structure in that the valence band maximum occurs at or near A and the conduction band minimum occurs at a point between Z and Γ. From the total energies calculated, compounds with the FeGa₃-type structures are more stable than those with the CoGa₃-type structures. The band gaps of FeGa₃, RuGa₃, OsGa₃ and RuIn₃ with the FeGa₃-type structure are about 0.50, 0.26, 0.68, and 0.30 eV, respectively, which are wider than those with the CoGa₃-type structure. Calculated band gaps are wider than the observed gaps, which is unusual in the LDA calculation.     

PMN-PNN-PT陶瓷晶粒异常长大研究

采用两步法和等离子放电烧结技术制备出了致密的单一钙钛矿相的PMN-PNN-PT陶瓷,对其高温热处理后晶粒异常长大进行了研究.发现添加5%(质量分数)过量PbO有助于晶粒的异常长大,观察到了3种典型的异常长大晶粒,为下一步固态法制备该组成单晶打下了基础.     

BiFeO3-BaTiO3-LaFeO3三元多铁性陶瓷材料的制备及性能

采用固相法制备了1-x(0.71BiFeO3-0.29B aTiO3)-xLaFeO3 (x=0.0,0.1,0 2,0 3,0 4,0.5)三元多铁性陶瓷材料,并研究了LaFeO3含量对陶瓷物相结构、微观组织、电学性能和磁电耦合性能的影响。结果显示,所有陶瓷均为单一钙钛矿结构,但随LaFeO3含量的增加,伴随着结构相变。所得陶瓷晶粒尺寸均匀,表现出良好的微观形貌,陶瓷晶粒随LaFeO3含量的增加而明显变小。虽然LaFeO3的加入在一定程度上降低了陶瓷的介电常数,但分析发现,x=0.1时能降低陶瓷的漏导,其漏电流达到了最小值,在10-7~10-8 A/cm2数量级,并且该陶瓷的剩余极化强度Pr和磁电耦合系数αME均达到最大值,分别为0.45μC/cm2和132.21 mV/cm·Oe (120 kHz)。因此,与0.71BiFeO3-0.29BaTiO3陶瓷相比,添加少量LaFeO3可以在一定程度上增加陶瓷的铁电性和磁电耦合性能。     

Features of feathery γ structure in a near-γ TiAl alloy

This work characterizes the feathery-like structures produced in a Ti–46.8Al–1.7Cr–1.8Nb (at.%) alloy during rapid continuous cooling from the α domain. Their morphology and crystallography are described using different microscopy and orientation mapping techniques. These feathery-like structures are divided into many small domains, characterized by low-angle misorientations (rotated less than 15°) between the domains. The domains comprise multiple parallel γ lamellae and rare traces of α₂. These lamellae follow the Blackburn orientation relationship and have a {1 1 1}_γ habit plane. Two types of γ-feathery structures were identified according to their location and crystallography. The grain-boundary γ-feathery structures originate from lamellar structures that grow into a neighboring grain. Alternatively, the internal γ-feathery structures are located in the interior of prior α grains and show an average misorientation of 36° around one $〈100{〉}_{{\mathrm{\gamma }}_{\text{L}}}$ axis of the lamellar structure in which it is embedded. This paper describes these two γ-feathery structures in detail and discusses their development in light of the mechanisms available in the literature, particularly sympathetic nucleation.