全光密集波分复用系统中光学器件研究进展

概述了国内外最新用于全光密集波分复用（D－WDM）系统中的光学器件的研究进展，这些器件包括光发射／光接收器、光复用／解复用器、光滤波器、光放大器及高速传输系统中的光色散补偿器等。     

光栅型单模波分复用器件的研制与系统联试

本文介绍用国产光栅和自聚焦棒透镜实现的长波长、单窗口、单模四路波分复用器,及二波波分复用系统的传输实验。     

基于阵列波导光栅的波分复用器件

阵列波导光栅波分复用／解复用器有N个输入端口和N个输出端口,能同时传输N^3路不同的光信号,除具有波分复用和解复用功能外,能灵活地与其它光器件组成多波长光源、光路分插复用器、光路交叉连接器、波长路由器等波分复用器件,在光通信网络中有广泛的应用前景。     

体全息波分复用器件波长选择性实验

为了研究体全息光栅波分复用器件的波长选择性,采用532 nm绿光透射式记录的方法在一块双掺铟铁立方型铌酸锂晶体中先后记录了具有不同光栅尺寸比的有限尺寸体全息光栅,用光通信波段红外可调谐激光器对这些光栅分别进行了正交式读出.光栅尺寸比为4∶3,4∶2和5∶2时得到的波长选择性曲线的3 dB带宽分别为0.48 nm,0.45 nm和0.43 nm,对应的布拉格中心波长均与理论预测值吻合得很好.表明在用通信波长对体全息光栅进行读出时,随着光栅尺寸比的增大,波长选择性曲线的3 dB带宽会减小.通过选择合适的光栅尺寸比可以明显改进体全息光栅波分复用器件的波长选择性,从而达到密集波分复用的需求.     

光电器件及光电集成发展

1.光电器件的发展 光电子器件技术是推动光纤通信技术发展的核心技术。它经历了分立元件—组件—模块—光集成和光电集成的发展过程。在第一代点对点光通信系统中采用的主要光器件有半导体激光器、光纤、,连接器和光检测器。随着光电器件性能的提高及新功能光电器件的商用化,第二代大容量光通信系统也已得到广泛应用。在第二代光通信系统中除了第一代系统的光电器件外,还加进了合/分波器、光放大器、低速光开关和外调制器等。     

波分复用系统中的光电器件

本文介绍波分复用网络的应用，并概述波分复用系统中的关键光电器件及其要求。     

基于阵列波导光栅的波分复用器件

阵列波导光栅波分复用 /解复用器有 N个输入端口和 N个输出端口 ,能同时传输 N2 路不同的光信号 ,除具有波分复用和解复用功能外 ,能灵活地与其它光器件组成多波长激光器、光路分插复用器、光路交叉连接器、波长路由器等波分复用器件 ,在光通信网络中有着广泛的应用前景。     

光波分复用器件和光学梳状滤波器理论及最新进展

介绍了波分复用（WDM）/解复用器件和光学梳状滤波器（Interleaver)的几种实现方法，分析了各种方法的特点和现状，并提出了实现更密集WDM的一种新途径——DWDM器件和Interleaver级联方案。     

波分复用系统用光学器件的新进展

简要说明了WDM系统所使用的半导体光学器件中的EA调制器，可变波长LD以及波长转换器件的开发情况。     

粗波分复用光学器件测试

粗波分复用（CWDM）被视为城域接入网实现带宽的首选技术。由于它采用成本低廉的、基于分布式反馈(DFB)激光器的发射机以及低成本发射机、经济型复用器，不需要昂贵的直插光放大系统，所以是替代密集波分复用(DWDM)的一种极具吸引力的备选方案。     

InGaAsP/InP dual wavelength lasers

The first successful dual wavelength lasers emitting at 1.2 ?m and 1.3 ?m wavelengths are described. The lasers operated up to 0°C.     

基于光纤光栅和光学环形器的密集波分复用解复用器的实验研究

提出了一种实用的基于光纤光栅和光学环形器的密集波分复用解复用器，并对其进行了系统的实验研究。实验结果表明，该器件在０．３ｎｍ的通道间隔下，串话小于－１５ｄＢ，适合于密集波分复用。该器件还具有结构简单、通道扩展方便等特点。     

Recent developments in monolithic integration of InGaAsP/InP optoelectronic devices

Monolithically integrated optoelectronic circuits combine optical devices such as light sources (injection lasers and light emitting diodes) and optical detectors with solid-state semiconductor devices such as field effect transistors, bipolar transistors, and others on a single semiconductor crystal. Here we review some of the integrated circuits that have been realized and discuss the laser structures suited for integration with emphasis on the InGaAsP/InP material system. Some results of high frequency modulation and performance of integrated devices are discussed.     

InGaAsP/InP monolithic integrated circuit with lasers and an optical switch

InGaAs/InP monolithic integrated circuits composed of a compact carrier-injection optical switch and distributed feedback laser diodes are fabricated. These integrated circuits have a variety of functions, such as monolithic modulators, switches and optical amplifiers for optical communication systems.     

Narrow spectral linewidth characteristics of monolithic integrated-passive-cavity InGaAsP/InP semiconductor lasers

The spectral linewidth of 1.3 ?m monolithic integrated-passive-cavity (IPC) semiconductor laser is measured by a delayed self-heterodyne technique. It is found that the line-width is narrowed when longitudinal submode is suppressed. The narrowest linewidth obtained so far is 900 kHz at 6 mW output power.     

Monolithic integrated wavelength demultiplexer based on a waveguideRowland circle grating in InGaAsP/lnP

We present detailed modeling and experimental results for an improved design of an InGaAsP-InP wavelength demultiplexer based on a monolithically integrated Rowland circle grating. The design incorporated ten wavelength channels at 1.55 μm with a uniform spacing of 2 nm. The total on-chip loss was about 10 dB and the crosstalk between adjacent channels was as low as -25 dB. It was shown that low-loss etched turning mirrors can reduce the total on-chip loss by about 4 dB compared to traditional 90° curved multimode waveguides. By replacing standard flat grating facets with retro-reflecting V-shaped facets in the echelle grating, the loss was further reduced by 4 dB. Polarization independent operation within a passband of 0.5 nm was achieved by using multimode output waveguides. The potential sources producing the crosstalk have been analyzed and fabrication modifications for further improvement are suggested     

Monolithically integrated long wavelength photoreceiver OEIC based on InP/InGaAs HBT technology

The epitaxial structure and growth, circuit design, fabrication process and characterization are described for the photoreceiver opto-electronic integrated circuit (OEIC) based on the InP/lnGaAs HBT/PIN photodetector integration scheme. A 1.55 μm wavelength monolithically integrated photoreceiver OEIC is demonstrated with self-aligned InP/lnGaAs heterojunction bipolar transistor (HBT) process. The InP/lnGaAs HBT with a 2 μm × 8 μm emitter showed a DC gain of 40, a DC gain cutoff frequency of 45 GHz and a maximum frequency of oscillation of 54 GHz. The integrated InGaAs photodetector exhibited a responsivity of 0.45 AAV at λ = 1.55 μm, a dark current less than 10 nA at a bias of -5 V and a -3 dB bandwidth of 10.6 GHz. Clear and opening eye diagrams were obtained for an NRZ 223-l pseudorandom code at both 2.5 and 3.0 Gbit/s. The sensitivity for a bit error ratio of 10-9 at 2.5 Gbit/s is less than -15.2 dBm.     

Incident wavelength dependence of pulse responses in InP/InGaAsP/InGaAs avalanche photodiodes

Pulse responses of InP/InGaAsP/InGaAs APDs have been studied at 1.3 and 1.55 ?m. A faster response rise-up characteristic was observed at 1.55 ?m than at 1.3 ?m. This result indicates that response speed depends on the hole generating region and hole pile-up at the heterojunction is decreased by introducing a hole-acceleration layer such as InGaAsP.     

宽带混合光纤放大器研究

在讨论了宽带混合光纤放大器研究方法的基础上 ,设计了一个增益平坦带宽为 11.4THz的宽带混合光纤放大器 ,并对其增益和噪声特性进行了详细研究 ,最后将其应用于一个 2 0信道的WDM系统 ,实现了 6 4 0km无误码传输     

WDM格型光网络中的动态组播共享保护算法

该文针对WDM格型网络中单链路失效的情况,提出了一种保护动态组播业务的基于路径的优化共享保护(PB-OSPM)算法。该算法在基于最优路径对的共享不相交路径(OPP-SDP)算法的基础上,通过引入保护波长使用情况矩阵和波长预留矩阵记录预留波长资源的使用情况,允许不发生冲突的不同组播的保护路径间共享预留波长资源。研究采用欧洲光网络(EON)的拓扑对PB-OSPM算法和OPP-SDP算法在增性网络负载情况下的网络冗余度和同波长资源配置和网络负载情况下动态网络负载的网络连接阻塞率做了仿真。结果表明,相同条件下,PB-OSPM算法比OPP-SDP算法有更低的连接阻塞率。组播业务间波长资源的共享是提高波长资源利用率的有效方法。