基于多重体全息光栅的光谱器件的研究

提出了一种新型的基于多重体全息存储的光栅光谱仪。在光折变晶体Fe:LiNbO3中的同一位置采用角度与波长混合复用的方法记录多个光栅，它们对相应波长的光具有光谱色散功能；采用布喇格角度与波长补偿的方法，它们还可以通过单一波长的激光器进行记录。给出了该器件的工作原理和参数设计，并在实验上制作了10通道的光谱间隔为10nm的光谱器件，实验结果表明，该光谱器件具有设计灵活、光谱范围宽、光谱分辨率高和衍射效率高等优点。     

中国科学院长春光机所研制的单色仪系列

单色仪是广泛用于各种光谱仪器中产生单色光的仪器．它采用平面光栅或凹面全息光栅作分光元件．波长范围可从紫外、可见扩展到红外区(0．2～25μm)，在IBM／PC计算机控制下能实现波长自动扫描、曲线描绘及数据处理。仪器具有波长范围宽、测量精度高、自动化程度高、软件功能丰富等特点。     

用纳米印刷技术制备微机械和微流体金属光栅器件

纳米印刷技术是一种制备大面积亚波长光栅的新技术。基于此光栅的滤光器具有光谱的特性。利用波长耦合分析法对光栅进行理论模拟,此模拟允许反射率取最大和最小值：利用微电子机械系统（MEMS）制备微流体和微机械光栅,这些光栅是制备可调滤光器和其他可选择波长器件的基本元件。这些可调器件通过改变光栅表面的折射率实现波长的选择。如果在光栅表面附着一层水膜。光栅共振波长可改变33％;如果在光栅表面覆盖石英。则共振波长从558nm改变到879nm,波长改变率高达58％。此外,大约有3种因素可改变单一波长的折射率。这些光栅器件在可调滤光器或光调节器方面有着重要的应用价值。     

基于啁啾莫尔光栅的多波长滤波器研究

基于法布里-珀罗谐振腔(F-P腔)的光纤光栅器件是近年来受到颇多关注的光无源器件,具有广泛的应用前景。F-P腔的光栅器件功能多,形式多变,尤其具有多通道滤波特点,在光通信以及传感方面发挥着重要作用;而且构成F-P腔的光纤光栅参数可变可调,能够形成具有不同功能和用途的光器件。运用传输矩阵法和MATLAB软件,对啁啾莫尔光栅的反射特性进行了系统的理论研究与仿真分析,有助于光纤光栅F-P腔在微波光子雷达、多波长滤波器、多波长激光输出等领域的应用。     

非线性光栅自调制光限幅器件研究

研制出一种三角槽型透明高分子聚合物光栅与该聚合物平板间填充有机非线性光学液体的夹层结构器件，具有非线性自调制光限幅功能。实验测得该器件对较弱的532nm波长的YAG倍频激光透过率大于60％。对较强激光透过率小于2％～3％。理论预期在激光波长400-700nm都有光限幅特性。且愈靠近532nm波长。激光限幅功能愈强。首次从实验上验证了该非线性光栅具有自适应宽带光限幅的功能。它不仅可以实现可调谐光限幅。且对所设计的激光波长，达到能量低于人眼安全阈值的高效激光防护成为可能。     

阵列波导光栅的应用前景

阵列波导光栅是高速大容量DWDM光通信系统的光键器件，是目前研究、开发与应用的热点，简要介绍了AWG滤波器，复用／解复用器，光波长信道选择器，光插／分复用器，多波长光源和多波长接收器的应用前景。     

光纤通信中一些新型光器件的研究与发展现状

本文介绍了光纤通信中使用的光开关及其阵列、组合型光无源器件、光纤光栅、光纤激光器、光纤放大器、全光波长变换器、MEMS器件、光电集成器件等的近期研发现状,并展望了光器件未来的发展趋势.     

光纤通信中一些新型光器件的研究与发展现状

本文介绍了光纤通信中使用的光开关及其阵列、组合型光无源器件、光纤光栅、光纤激光器、光纤放大器、全光波长变换器、MEMS器件、光电集成器件等的近期研发现状,并展望了光器件未来的发展趋势.     

量子阱混杂单片集成宽可调谐激光器与半导体光放大器(英文)

采用量子阱方法集成半导体光放大器的取样光栅可调谐激光器,这在国内尚属首次．该器件波长调谐范围可达33nm,在放大器注入50mA电流时,输出光功率可达10mW,同时边模抑制比可达35dB以上．     

光折变全息光栅扭曲对波分复用应用的影响

介绍了光折变全息生成的布拉格光栅由于扭曲而对波分复用应用的影响，提供了一种在器件制作前预先了解光栅扭曲对器件性能影响大小的方法。使用傅里叶分析的方法，对布拉格光栅扭曲引起的相位改变做了修正计算。对修正了相位的光栅，采用严格耦合波分析，计算了光折变全息应用于波分复用的频谱响应。并用该方法计算了不同程度的光栅扭曲造成的频谱响应变化，证明光栅扭曲会直接造成器件衍射效率下降，旁瓣增大．从而使串扰增大，是光折变全息应用于波分复用必须考虑的重要因素之一。对光折变相位光栅衍射图像数据采集的过程作了介绍，并在此基础上将记录了光栅的晶体进行波分复用损耗和串扰特性的测试，实验结果证明提供的方法能够有效预知光折变全息光栅扭曲对器件综合性能的影响。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks