n-on-p结构深台面延伸波长InGaAs探测器的ICPCVD钝化工艺

采用ICP刻蚀(inductively coupled plasma etching)工艺制备了深台面n-on-p结构的可响应到2.4μm的延伸波长8×1元线列In Ga As探测器.器件表面采用ICP源激发的N2等离子体进行处理,然后再使用ICPCVD(inductively coupled plasma chemical vapor deposition)沉积一层Si Nx薄膜的钝化工艺.不同面积光敏元器件的电流—电压特性分析显示器件在常温和低温下侧面电流均得到有效抑制,激活能分析显示了器件优异的暗电流特性,在-10 m V偏压下,在200 K和300 K温度下暗电流密度分别为94.2 n A/cm2和5.5×10-4A/cm2.     

高量子效率中波InAs/GaSb Ⅱ类超晶格探测器分子束外延生长及特性（英文）

基于分子束外延(MBE)生长技术获得了高量子效率的InAs/GaSb T2SLs中波红外(MWIR)光电探测器结构材料,表现出了层状结构生长的光滑表面和出色的晶体结构均匀性。此超晶格中波红外探测器的50%截止波长约为5.5μm,峰值响应率为2.6 A/W,77 K下量子效率超过了80%,与碲镉汞的量子效率相当。在77K,-50 m V偏压下的暗电流密度为1.8×10~(-6)A/cm~2,最大电阻面积乘积(RA)(-50 m V偏压)为3.8×10~5Ω·cm~2,峰值探测率达到了6.1×10~(12)cm Hz~(1/2)/W。     

InAs/GaSb超晶格/GaSb体材料中短波双色红外探测器

采用GaSb体材料和InAs/GaSb超晶格分别作为短波与中波吸收材料,外延生长制备了NIPPIN型短中双色红外探测器。HRXRD及AFM测试表明,InAs/GaSb超晶格零级峰和GaSb峰半峰宽FWHM分别为17.57 arcsec和19.15 arcsec,10μm×10μm范围表面均方根粗糙度为1.82?。77 K下,SiO_2钝化器件最大阻抗与面积乘积值RA为5.58×10~5Ω?cm~2,暗电流密度为5.27×10~(-7)A?cm~(-2),侧壁电阻率为6.83×10~6Ω?cm。经阳极硫化后,器件最大RA值为1.86×10~6Ω?cm~2,暗电流密度为4.12×10~(-7)A?cm~(-2),侧壁电阻率为4.49×10~7Ω?cm。相同偏压下,硫化工艺使器件暗电流降低1-2个数量级,侧壁电阻率提高了1个数量级。对硫化器件进行了光谱响应测试,器件具有依赖偏压极性的低串扰双色探测性能,其短波通道与中波通道的50%截止波长分别为1.55μm和4.62μm,在1.44μm、2.7μm和4μm处,响应度分别为0.415 A/W、0.435 A/W和0.337 A/W。     

InGaAs台面探测器的AIN钝化研究

首次介绍了采用AlN介质薄膜为钝化层的InGaAs台面型探测器(λ=2.4 μm).探测器采用分子束外延(MBE)方法生长的原位掺杂的PIN In0.78Ga0.22As/In0.78Ga0.22As/InxGa1-xAs/InP 外延材料.由于台面型器件的裸露面积较大,特另q是台面的成形工艺所带来的侧面损伤,加大了光生载流子的表面复合,使器件的暗电流、噪声等性能急剧下降.采用新的AlN钝化工艺,制备了8元正照射台面InGaAs探测器,室温下(T=300 K)电压为-0.5 V时.探测器的暗电流(ID)约为9×10-8 A,优值因子(R0A)大于30 Ωcm2,通过与其他钝化工艺所制备的器件的性能进行分析对比得出:AlN能有效地改善器件的表面状态,减小表面复合,从而降低了暗电流,提高了探测器的性能.     

高性能短波红外InGaAs焦平面探测器研究进展

中科院上海技物所近十年来开展了高性能短波红外InGaAs焦平面探测器的研究。0.9~1.7mm近红外In Ga As焦平面探测器已实现了256×1、512×1、1024×1等多种线列规格,以及320×256、640×512、4000×128等面阵,室温暗电流密度<5 n A/cm~2,室温峰值探测率优于5×10~(12)cm×Hz~(1/2)/W。同时,开展了向可见波段拓展的320×256焦平面探测器研究,光谱范围0.5~1.7mm,在0.8mm的量子效率约20%,在1.0mm的量子效率约45%。针对高光谱应用需求,上海技物所开展了1.0~2.5mm短波红外InGaAs探测器研究,暗电流密度小于10 n A/cm~2@200 K,形成了512×256、1024×128等多规格探测器,峰值量子效率高于75%,峰值探测率优于5×10~(11)cm×Hz~(1/2)/W。     

InAs/GaSb Ⅱ类超晶格长波红外探测器的表面处理研究

开展了In As/Ga Sb Ⅱ类超晶格长波红外探测器的表面处理研究。通过对不同处理工艺形成台面器件的暗电流分析,发现N₂O等离子处理结合快速热退火(RTA)的优化工艺能够显著改善长波器件电学性能。对于50%截止波长12.3μm的长波器件,在液氮温度,-0.05 V偏置下,表面处理后暗电流密度从5.88×10^-1 A/cm²降低至4.09×10^-2 A/cm²,零偏下表面电阻率从17.7Ωcm提高至284.4Ωcm,有效降低侧壁漏电流。但是该表面处理后的器件在大反偏压下仍有较大的侧壁漏电,这可能是由于高浓度的表面电荷使得大反偏下侧壁存在较高的隧穿电流。通过栅控结构器件的变栅压实验,验证了长波器件存在纯并联电阻及表面隧穿两种主要漏电机制。最后,对表面处理前后的暗电流进行拟合,处理后器件表面电荷浓度为3.72×10¹¹ cm^-2。     

硅中离子注入层的红外瞬态退火及其浅结的制备

本文研究了硅中离子注入层的红外瞬态退火.对于注As~+和注B~+样品的测试表明,红外瞬态退火具有电激活率高、缺陷消除彻底和注入杂质再分布小等优点.对于注入剂量为1×10~(15)As~+cm~(-2)的样品和3.6×10~(14)B~+cm~(-2)的样品,经红外瞬态退火后电激活率分别达到了90%和95%.用红外瞬态退火样品制作的台面管的反向漏电流,在相同的测试条件下,只是常规热退火样品的一半左右.对于通过650(?)SiO_2膜,25keV、5×10~(14)cm~(-2)剂量的硼离子注入样品,经红外瞬态退火后得到了结深分0.20μm的浅结.     

InAs/GaAsSb带间级联中波红外焦平面研究

针对高工作温度红外探测器的迫切需求,设计并利用分子束外延技术制备了高晶格质量的2级带间级联中波红外探测材料,带间级联单元器件在最高323 K下可以测试到清晰的响应光谱,140 K下暗电流密度达到4×10~(-5)A/cm~(-2).并在此基础上利用干法刻蚀技术实现了320×256规模的台面型带间级联红外焦平面原型器件.焦平面测试结果表明其在80-120K范围内量子效率达到30%,127 K下噪声等效温差为55.1 mK,盲元率为2.3%.采用该焦平面器件在127 K下获得了较为清晰的演示性室温目标红外热成像.     

AlxGa1-xN日盲紫外探测器及其焦平面阵列

报道了320×256元AlxGa1-xN日盲型紫外探测器及其焦平面阵列探测器的研制情况,介绍了材料生长、器件制备工艺和器件的光电特性.器件的开启电压大于3.5 V,-0.5 V偏压时暗电流小于1.2×10-12A(φ=300 μm台面),光谱响应范围260～280 nm,268 nm峰值波长的响应度大于0.095 A/W.器件实现了日盲紫外成像演示.     

自支撑P(VDF-TrFE)红外探测器（英文）

制备了具有自支撑绝热结构的Al/P(VDF-TrFE)/NiCr红外探测器单元,其中NiCr半透明膜作为探测器的上电极和吸收层.实验结果表明:P(VDF-TrFE)薄膜具有很好的铁电性和热释电性,其铁电剩余极化强度和热释电系数分别为7.1μC/cm~2和27μC/m~2K;探测器单元在10 Hz工作频率下对黑体温度500 K的辐射源的电压响应率和探测率分别为1500 V/W和5×10~7 cmHz~(1/2)W~(-1);通过对电压响应率随频率变化的实验数据进行拟合,得到探测器单位面积的热导和吸收率分别为2.5×10~(-3) W/cm~2K和0.1;利用P(VDF-TrFE)探测器单元可对目标物体实现热成像.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks