施主掺杂对TiO2氧敏材料缺陷化学的影响

对施主V2O5掺杂TIO2材料的高温电导进行了详细的测试：XRD分析表明少量施主掺杂并未改变材料的金红石结构；施主掺杂样品在较高温度测试时，在高氧分压一侧，发生电导类型转变，从而使测氧范围变窄。运用缺陷化学分析法，解释了不同氧分压下的电导机制。     

双施主对受主补偿的BaTiO3系PTCR材料的影响

采用过剩施主二次掺杂法，研究双施主二次掺杂时两种施主相对比例不同对于BaTiO3材料性能的影响，发现过剩施主二次掺杂对受主杂质进行补偿比一次掺杂效果好，在相同掺杂量的情况下，可获得更大的PTC效应和更低的室温电阻率。采用Sb、Y过剩双施主对受主进行补偿，当双施主相对比例变化时，存在PTCR材料α30℃=0．4℃^-1的极大值。采用过剩双施主对受主进行补偿，可获得升阻比〉7，温度系数α30℃〉0．30℃^-1的PTCR材料，有效地降低原料成本。     

退火温度对掺氮ZnO薄膜结构和光电特性的影响

采用Zn3N2热氧化法在直流磁控溅射设备上制备了掺氮ZnO薄膜（ZnO：N）,研究了不同退火温度对样品结构和光电特性的影响.X射线衍射谱（XRD）结果表明,Zn3N2在600℃以上退火即可转变为ZnO：N薄膜.X射线光电子能谱（XPS）发现,在热氧化法制备的ZnO：N薄膜中,存在两种与N相关的结构,分别是N原子替代O（受主）和N2分子替代O（施主）,这两种结构分别于不同的退火温度下存在,并且700℃下退火的样品在理论上具有最高的空穴浓度,这一点也由霍尔测量结果得到证实.同时,从低温PL光谱中观察到了与No受主有关的导带到受主（FA）和施主-受主对（DAP）的跃迁,并由此计算出热氧化法制备的ZnO：N薄膜中的No受主能级位置.     

SrTiO_3系多功能陶瓷一次烧成中的掺杂行为

采用一次烧成法制备了ＳｒＴｉＯ３系多功能陶瓷，测试了样品的介电性能和压敏性能，分析了施主杂质和受主杂质的掺杂行为。研究结果表明，受主杂质Ａｇ＋、Ｎｉ２＋掺杂的样品均具有优良的介电性能和压敏性能，烧结气氛对施主杂质和受主杂质的掺杂行为产生重要影响     

钒掺杂形成半绝缘6H-SiC的补偿机理

研究了钒掺杂生长半绝缘6H-SiC的补偿机理.二次离子质谱分析结果表明,非故意掺杂生长的6H-SiC中,氮是主要的剩余浅施主杂质.通过较深的钒受主能级对氮施主的补偿作用,得到了具有半绝缘特性的SiC材料.借助电子顺磁共振和吸收光谱分析,发现SiC中同时存在中性钒(V4 )和受主态钒(V3 )的电荷态,表明掺入的部分杂质钒通过补偿浅施主杂质氮,形成受主态钒,这与二次离子质谱分析结果相吻合.通过对样品进行吸收光谱和低温光致发光测量,发现钒受主能级在6H-SiC中位于导带下0.62eV处.     

钒掺杂形成半绝缘6H-SiC的补偿机理

研究了钒掺杂生长半绝缘6H-SiC的补偿机理.二次离子质谱分析结果表明,非故意掺杂生长的6H-SiC中,氮是主要的剩余浅施主杂质.通过较深的钒受主能级对氮施主的补偿作用,得到了具有半绝缘特性的SiC材料.借助电子顺磁共振和吸收光谱分析,发现SiC中同时存在中性钒(V4+)和受主态钒(V3+)的电荷态,表明掺入的部分杂质钒通过补偿浅施主杂质氮,形成受主态钒,这与二次离子质谱分析结果相吻合.通过对样品进行吸收光谱和低温光致发光测量,发现钒受主能级在6H-SiC中位于导带下0.62eV处.     

p型ZnO薄膜制备的研究进展

ZnO是一种性能优异的"低温蓝光工程"宽带隙Ⅱ-Ⅵ族半导体材料,但因本征施主缺陷和施主杂质引起的自补偿效应等使ZnO很难有效地实现n型向p型导电的转变。为此,阐述了ZnO薄膜的p型掺杂机理,介绍了国内外研究者在抑制自补偿、提高受主掺杂元素固溶度及寻求合适的受主掺杂元素等方面p型ZnO薄膜的最新研究进展。研究表明:增加ZnO材料中N原子固溶度的各种办法如施主-受主共掺杂、超声雾化气相淀积及本征ZnO薄膜在NH3气氛下后退火等和选择IB族中的Ag为受主掺杂元素是实现ZnO薄膜p型导电的有效措施。期望通过本综述能为国内ZnO基器件应用的p型ZnO薄膜的制备提供新思路。     

钇锰离子共掺杂对Ni内电极MLCC介电性能的影响

对具有Y5V特性的BCTZ系抗还原介质材料进行了施主离子(Y3+)和受主离子(Mn2+)共掺杂。以该电介质制备出多层陶瓷电容器,并测试了其介电性能。讨论了Y3+和Mn2+离子共掺杂对Y5V特性的BCTZ系介质材料介电性能的影响。通过施主-受主掺杂,电容器的耐压升高,损耗降低,介电常数减小。并且,容量温度系数满足Z5U特性。     

霍尔测试估计含氮直拉硅单晶中的氧施主

本文对含氮ＣＺ硅单晶中的氧施主进行了探讨，测试样品是６５０℃下处理的含氮ＣＺ硅单晶在７００℃的温度下继续热处理。通过变温霍尔测试发现，材料中除了热施主外，还存在一种浅施主能级。这种浅施主在６５０℃下不能完全消除，７００℃下继续处理浓度减少而引起电阻率上升。     

低电阻率PTC陶瓷及限流保安器的研究

采用Ｓｂ（３＋）、Ｎｂ（５＋）双施主掺杂并添加ＡＳＴＬ玻璃料，研制出限流保安器用的ＢａＴｉＯ３基低电阻率ＰＴＣ陶瓷材料。探讨了施主杂质、受主杂质等微量元素及玻璃料对ＰＴＣ陶瓷性能的影响。应用上述ＰＴＣ陶瓷制作出开关温度Ｔｂ＝１２０℃的限流保安器。     

TiO_2高温电导及缺陷化学分析

对 Ti O2 高温电导机制和缺陷化学进行了详细的理论分析和推导 ,计算了未掺杂样品的电导激活能。电导激活能不仅与温度有关 ,而且与载流子的特性有关。在低温高氧分压下 ,电导激活能大 ,氧缺位浓度较小 ,缺陷以一价氧缺位为主 ;而在高温低氧分压下 ,电导激活能小 ,氧缺位浓度较大 ,缺陷以二价氧缺位为主     

Self‐Compensated Insulating ZnO‐Based Piezoelectric Nanogenerators

Remarkable enhancement of piezoelectric power output from a nanogenerator (NG) based on a zinc oxide (ZnO) thin film is achieved via native defect control. A large number of unintentionally induced point defects that act as n‐type carriers in ZnO have a strong influence on screening the piezoelectric potential into a piezoelectric NG. Here, additional oxygen molecules bombarded into ZnO lead to oxygen‐rich conditions, and the n‐type conductivity of ZnO is decreased dramatically. The acceptor‐type point defects such as zinc vacancies created during the deposition process trap n‐type carriers occurring from donor‐type point defects through a self‐compensation mechanism. This unique insulating‐type ZnO thin film‐based NGs (IZ‐NGs) generates output voltage around 1.5 V that is over ten times higher than that of an n‐type ZnO thin film‐based NG (around 0.1 V). In addition, it is found that the power output performance of the IZ‐NG can be further increased by hybridizing with a p‐type polymer (poly(3‐hexylthiophene‐2,5‐diyl):phenyl‐C₆₁‐butyric acid methyl ester) via surface free carrier neutralization.     

Doping Rules and Doping Prototypes in A2BO4 Spinel Oxides

A₂BO₄ spinels constitute one of the largest groups of oxides, with potential applications in many areas of technology, including (transparent) conducting layers in solar cells. However, the electrical properties of most spinel oxides remain unknown and poorly controlled. Indeed, a significant bottleneck hindering widespread use of spinels as advanced electronic materials is the lack of understanding of the key defects rendering them as p‐type or n‐type conductors. By applying first‐principles defect calculations to a large number of spinel oxides the major trends controlling their dopability are uncovered. Anti‐site defects are the main source of electrical conductivity in these compounds. The trends in anti‐sites transition levels are systemized, revealing fundamental “doping rules”, so as to guide practical doping of these oxides. Four distinct doping types (DTs) emerge from a high‐throughput screening of a large number of spinel oxides: i) donor above acceptor, both are in the gap, i.e., both are electrically active and compensated (DT‐1), ii) acceptor above donor, and only acceptor is in the gap, i.e., only acceptor is electrically active (DT‐2), iii) acceptor above donor, and only donor is in the gap, i.e., only donor is electrically active (DT3), and iv) acceptor above donor in the gap, i.e., both donor and acceptor are electrically active, but not compensated (DT‐4). Donors and acceptors in DT‐1 materials compensate each other to a varying degree, and external doping is limited due to Fermi level pinning. Acceptors in DT‐2 and donors in DT‐3 are uncompensated and may ionize and create holes or electrons, and external doping can further enhance their concentration. Donor and acceptor in DT‐4 materials do not compensate each other, and when the net concentration of carriers is small due to deep levels, it can be enhanced by external doping.     

MOVPE-HgCdTe薄膜掺杂研究的进展

MOVPE是生长HgCdTe薄膜的主要技术之一,它可以灵活地控制掺杂浓度和原位生长高性能的p-n异质结和双异质结双波段p-n-N-P的HgCdTe薄膜.文中还简要介绍近年在MOVPE-HgCdTe薄膜的掺杂研究中,施主掺杂和受主掺杂的研究情况以及取得的最新近展.EI和DMAAs分别是广泛采用的施主和受主掺杂剂.     

On the tin impurity in the thermoelectric compound ZnSb: Charge-carrier generation and compensation

The technique for measuring the Hall coefficient and electrical conductivity in the thermal cycling mode is used to study the effect of the Sn impurity on the microstructure and properties of pressed ZnSb samples. Tin was introduced as an excess component (0.1 and 0.2 at %) and as a substitutional impurity for Zn and Sb atoms in a concentration of (2–2.5) at % The temperature dependences of the parameters of lightly doped samples are fundamentally like similar curves for ZnSb with 0.1 at % of Cu. The highest Hall concentration, 1.4 × 10¹⁹ cm^–3 at 300 K, is obtained upon the introduction of 0.1 at % of Sn; the dimensionless thermoelectric figure of merit attains its maximum value of 0.85 at 660 K. The experimental data are discussed under the assumption of two doping mechanisms, which are effective in different temperature ranges, with zinc vacancies playing the decisive role of acceptor centers. In two ZnSb samples with SnSb and ZnSn additives, the charge-carrier compensation effect is observed; this effect depends on temperature and markedly changes with doping type. As in p-type A^IV–B^VI materials with a low Sn content, hole compensation can be attributed to atomic recharging Sn²⁺ → Sn⁴⁺. Types of compensating complexes are considered.     

Properties of highly conducting nitrogen-plasma-doped ZnSe:N thin films

Values for the acceptor ionization energy, E_a, and compensating donor ionization energy, E_d, have been obtained from an analysis of variable-temperature photoluminescence data taken for a series of highly conducting nitrogen-plasma doped ZnSe thin films. E_awas found to be highly temperature dependent, with values ranging from E_a ~110 meV at low temperatures to ~60 meV at room temperature. The compensating donor ionization energy ranged from E_d ~31 meV at low temperatures to ~24 meVat room temperature. These results provide clear evidence of thenonhydrogenic nature of the nitrogen acceptor state in heavily doped ZnSe:N thin films and suggest that interstitial bonding of N, at two or more stable sites, may play a central role in the p-type doping and compensation of this material at high doping levels.     

The influence of post-growth annealing on optical and electrical properties of p-type ZnO films

In this study, p-type ZnO films with excellent electrical properties were prepared by ultrasonic spray pyrolysis (USP) combined with a N–Al co-doping technique. The influence of post-growth annealing conditions, i.e., annealing ambient and temperature, on optical and electrical properties of p-type ZnO films was investigated. The dependence of the intensity of the green emission on the annealing ambient indicates that the green emission might originate from the donor defect, oxygen vacancy. The effect of the annealing temperature on electrical properties of ZnO-based films affirms the prominent action of hydrogen in the conductivity and acceptor doping of ZnO films.