一种基于射频电子标签的超低电压低功耗基带处理器

设计了一款应用于超高频段射频识别系统中电子标签的超低电压低功耗基带处理器.该基带处理器兼容协议,并满足无源标签的超低功耗要求.在设计上有针对性地提出了一种适合于门控时钟电源管理机制的体系结构,以及简单有效的随机数发生机制和分布式译码电路;并灵活运用了流水线结构、降低逻辑深度等低功耗技术.实现了解码/编码、CRC校验、指令解析、防碰撞机制和权限认证,以及对EEPROM的读写操作等功能.芯片采用Chartered 0.35μm 1P3M CMOS标准工艺实现,正常工作的最低电压仅为1.5V,平均电流2.1μA,功耗3.15μW,面积1.1mm×0.8mm.     

无源UHFRFID标签芯片基带处理器的低功耗设计

在分析ISO18000-6C标准内容的基础上,提出了一种基带处理器的结构,设计了一款符合ISO18000-6C标准的UHF RFID标签芯片的基带处理器。该基带处理器可支持协议规定的所有强制命令。设计通过降低工作电压、降低工作频率、使用门控时钟、增加功耗管理模块等一系列低功耗设计以降低处理器的功率消耗。在Xillinx的Virtex-4FPGA上验证满足协议功能要求,并在工作电压为1V,时钟为1.92MHz时,功耗仿真结果为9.9μW,很好的完成了低功耗电子标签的基带处理器设计。     

面向海关应用的UHF RFID电子标签芯片基带处理器

设计了一款基于ISO 18000-6C协议且适用于海关集装箱运输监控的数字基带处理器。提出并分析了数字基带处理器的总体结构以及模块划分,详细介绍了锁离合采集、锁离合监测记录等关键电路的设计。芯片采用TSMC 0.18μm 1P5M嵌入式EEPROM混合CMOS工艺实现。测试结果表明,芯片支持协议规定的所有功能,能正确记录开锁次数,其正常工作的最低电压为1V,平均电流为6.7μA,功耗为6.7μW,芯片尺寸为710μm×320μm。     

无源UHF RFID芯片中低功耗基带处理器的设计

对UHF RFID标签芯片的数字基带处理器结构及工作原理进行了分析。该基带处理器兼容ISO18000-6C协议。采用一系列先进的低功耗技术,如门控时钟技术、减小工作电压、降低时钟频率等,以降低无源射频识别标签的功耗。整个标签芯片采用TSMC 0.18μm 1P5M嵌入式EEPROM混合CMOS工艺实现。测试结果表明,该芯片正常工作的最低电压仅为1 V,平均电流为6.8μA,功耗为6.8μW,面积仅为150μm×690μm。     

超低功耗RFID标签基带处理器

针对集成片上天线(OCA)的超高频射频识别(RFID)标签设计了一款RFID专用协议的基带处理器,以满足RFID标签嵌入纸张及微小物体的防伪功能.由于OCA与读写器天线近场耦合获取能量有限,集成OCA的无源标签对功耗要求更加苛刻.针对微小OCA标签的应用需求,采用异步电路、门控时钟、低压库、多时钟域等低功耗设计方法,设计了专用协议标签基带处理器,其CMOS低压库的设计可以使基带处理器在0.5V的电源电压下工作,综合布局布线后,其电路仿真结果表明,峰值功耗仅为0.32 μW.标签芯片在UMC 0.18 μm标准工艺下流片,测试结果显示,在读写器输出20 dBm能量的情况下,带OCA标签的读距离可达2 mm.     

一种新颖的单片集成红外传感信号处理器

介绍一种新颖的单片集成红外传感信号处理器。这种处理器能与多种红外传感器匹配 ,对接收到的传感信号进行处理 ,产生控制信号 ,快速启动各类装置 ,实现自动控制。芯片设计中采用多种抗噪声和低功耗设计技术。本处理器用 1 .2μm双层多晶双层金属 N阱 CMOS工艺实现 ,芯片总面积 2 .7mm2 ,电源电压 5 V时的静态电流为 1 .2 m A,封装后样品测试结果获得设计预期的功能和性能     

一种低功耗高频RFID标签芯片基带控制器

设计了一款应用于高频射频识别标签芯片的基带控制器。该基带控制器符合ISO15693标准协议,满足无源射频识别标签的低成本、低功耗的需求。详细论述了解码电路、命令响应模块及状态机、数据组织模块等关键电路的设计。芯片采用中芯国际0.35μm2P3M嵌入式EEPROM的混合信号CMOS工艺实现,基带控制器的Core面积仅为0.23mm2,功耗低至66.8μW。     

一种新型低功耗UHF RFID标签数字基带

设计了一款符合EPC C1 G2/ISO 18000-6C协议的超高频射频识别标签数字基带处理器。采用新型数字基带结构,并运用门控时钟、异步计数器和多种低频时钟协同工作等多种低功耗设计方法,降低了标签芯片的功耗和面积。在TSMC 0.18 μm标准CMOS工艺下流片,数字基带处理器版图面积为0.14 mm²,数字部分平均功耗为14 μW。     

低功耗UHF RFID标签基带处理器的ASIC实现

设计并实现了一种新颖的超高频RFID标签的基带处理器.该标签以ISO/IEC 18000-6C协议为基础,但在反向链路通信方面,在原协议FM0编码/Miller调制副载波的基础上增加了扩频编码的实现,目的是提高反向链路的通信信噪比.该设计支持协议要求的所有11条强制命令的读写操作,概率/分槽防冲突算法,以及对存储器的读写操作.设计中采用了低功耗技术,显著降低了芯片的平均功耗和峰值功耗.芯片采用0.18 μm6层金属CMOS工艺进行流片,面积为0.5mm2.测试结果表明,芯片消耗功耗约为16μW,最低工作电压为1.04 V.     

一种低功耗射频无线收发芯片基带控制器

设计了一种应用于射频无线收发芯片的数字基带控制器,采用中芯国际0.18μm CMOS工艺设计。该基带控制器系统主要包括接口电路、组帧电路、解帧电路以及核心控制处理器,可实现SPI通信和多种收发功能操作。基带控制器最终被集成到射频收发机芯片中并进行了流片验证,测试结果显示,基带控制器面积为0.54mm2,所有功能工作正常,实测功耗0.59mW。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.