低噪声CMOS图像传感器的重点专利分析

随着大规模集成电路设计和信号处理技术的提高,CMOS图像传感器日益受到重视,成为固态图像传感器的研究热点,但是噪声仍是制约CMOS图像传感器发展的重要因素之一.针对低噪声的CMOS图像传感器技术领域的专利文献,给出了该领域主要申请人的申请量分布图,并对该领域的重要专利进行分析,介绍了前5位重要专利的技术特点.     

图像传感器技术的专利状况分析——图像传感器技术的宏观定量分析

图像传感器是一种将光学图像转换成电子信号的器件,它被广泛地应用于摄像机、数码相机、照相手机等设备中。图像传感器主要分为感光耦合元件和互补式金属氧化物半导体有源像素传感器两种。基于图像传感器技术领域的专利文献,对该领域专利总体变化情况进行统计和分析,研究当前技术发展状况,分析在中国市场具有知识产权竞争优势的申请人,从专利布局现状揭示产业发展风险与机遇。     

CMOS图像传感器的关键专利分析

CMOS图像传感器具有低成本、低功耗、易集成和读取高速灵活等优点,随着近年来CMOS图像传感器技术的发展,CMOS图像传感器正逐渐取代传统的CCD图像传感器的主流地位.针对CMOS图像传感器领域的专利文献,基于专利文献的引用频次,对该领域的关键专利进行研究和分析,总结了关键专利的技术要点.     

基于图像的手势识别技术的专利分析

随着图形交互界面技术的发展,手势识别技术的研究日益受到重视,成为界面输入技术的研究热点,但是识别率和易操作性仍是制约手势识别技术发展的重要因素之一.针对基于图像的手势识别技术,分析了该领域历年专利申请数量及专利产出国的分布情况,并对该领域的热点技术手势分割和手势匹配进行了分析,希望对该领域研究者有所帮助.     

手机电视显示技术的专利分析

近年来,随着移动通信带宽的迅速提升,手机电视技术迅速发展,国外对于手机电视显示技术的专利申请越来越多,国内申请人也逐渐开始这方面的研究.针对手机电视显示技术的发展现状、国内外专利分布的分析、主要申请人的专利特点进行了专利分析统计,通过介绍此领域的专利发展现状和申请概况,对中国手机电视显示技术领域的发展有了进一步的认识.     

浅析图像处理领域的欧洲专利局检索报告

基于图像处理领域,对欧洲专利局检索报告中所涉及的专利/非专利文献的分布比例做了统计分析,并进一步针对其中的专利文献的国别做了统计分析.根据分析结果,绘制了X/Y/E类专利/非专利文献的引用比例图,以及主要国家/地区专利文献引用比例图.基于上述比例图给出了图像处理领域检索侧重点的建议,有利于提高该领域专利检索的效率.     

视频通信领域的图像处理技术

视频通信技术为人们提供了音视频融合的交流方式,但图像传输质量仍需提高。图像处理技术在视频通信领域发挥着重要作用。以图像处理技术为切入点,分析视频通信领域的图像压缩、图像恢复、图像增强和图像数字化处理等技术,提出了采用MPEG-4可扩缩算法进行视频图像压缩的方法,并对该算法进行改进,旨在通过对视频通信领域核心图像处理技术的探究,为提升图像传输质量提供参考。     

浅析图像传感器领域专利检索方法

图像传感器是半导体产业中最具潜力的领域之一.专利文献检索分析对于中国图像传感器企业的技术和市场布局举足轻重.结合图像传感器领域的专利文献特点,讨论了在图像传感器领域中专利检索的思路和方法,总结了对该领域文献进行检索时推荐采用的一般方法.     

一种基于Contourlet变换的图像质量评价算法

由于基于Contourlet变换的图像处理已经成为多尺度、多方向图像处理领域的重要组成部分,所以能对嵌入Contourlet变换域图像处理系统中的图像质量进行评估的算法就成为重要的评估方法。通过对Contourlet变换域图像结构特性的研究,提出了Contourlet结构相似度(CSSIM)的图像质量评价方法。在LIVE图库上的实验结果表明CSSIM比SSIM和DWTSSIM(基于小波的SSIM)更加符合人眼的视觉特性,可以更好地评判图像质量。因此该算法可应用于基于Contourlet变换的图像处理系统中。     

基于深度学习的医疗图像分割综述

自2006年深度学习这一概念提出以来,各研究领域对于深度学习技术的研究热度一直高居不下.深度学习的出现,对计算机视觉领域的发展起到了重要推动作用.计算机视觉的主要研究任务是对图像、视频等进行目标的检测、识别以及分割等,目前已经广泛应用于医疗、金融和工业领域中.其中最常见的应用场景是医学图像处理.图像分割是医学图像处理任...     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.