Electrical transport mechanisms of Neodymium-doped rare-earth semiconductors

Journal of Materials Science: Materials in Electronics - This study reports the electrical properties of Nd-doped cerium oxide (CeO2) films synthesized by microwave assisted hydrothermal using a...     

Growth and transport properties of AgInS2 ternary semiconductor

Journal of Materials Science: Materials in Electronics - A technique based on the Bridgman method was used to make single crystals of AgInS2. X-ray diffraction was used to determine the crystal...     

Electron transport in dye-sanitized solar cell with tin-doped titanium dioxide as photoanode materials

Journal of Materials Science: Materials in Electronics - Pure and tin-incorporated TiO2 (Sn-TiO2) nanoparticles were prepared utilizing photolysis method. Field emission-scanning electron...     

Anisotropic transport properties of graphene-based conductor materials

Journal of Materials Science - We analyzed nanographite-based materials in a combined study including experimental analysis via 4-point probe STM and simulation to provide a complete picture of...     

Impact of ionic liquid incorporation on ionic transport and dielectric properties of PEO-lithium salt-based quasi-solid-state electrolytes: role of ion-pairing

Journal of Materials Science: Materials in Electronics - The present paper reports the preparation and characterization of ionic liquid immobilized quasi-solid-state electrolytes (QS-SEs)...     

On the electrical transport in nickel telluride

Journal of Materials Science Letters -     

Enhancement of the electron transportation in the perovskite solar cells via optimizing the photoelectric properties of electron transport layer with nitrogen-doped graphene quantum dots

Journal of Materials Science: Materials in Electronics - The electron transport layer (ETL) is an indispensable functional block of perovskite solar cells (PSCs), which plays a pivotal role in the...     

Investigation of charge transport mechanism in hydrothermally synthesized reduced graphene oxide (rGO) incorporated zinc oxide (ZnO) nanocomposite films

Journal of Materials Science: Materials in Electronics - The present study aims to investigate the impact of reduced graphene oxide (rGO) incorporation on the charge transport properties of zinc...     

Spin-dependent electron transport analysis of benzyl alcohol and p-cresol based single molecular junction: a DFT-NEGF approach

Journal of Materials Science: Materials in Electronics - A single molecular junction can act as spintronic device when a molecule coupled with magnetic electrodes. Various analyses have been done...     

Impedance spectroscopy,dielectric, ferroelectric and electrical transport properties of Ba-doped Bi3TiNbO9 ceramics

Journal of Materials Science: Materials in Electronics - Aurivillius phase polycrystalline ceramics Bi3?xBaxTiNbO9 for x?=?0, 0.04, 0.06, 0.08 were prepared by a conventional...     

Spin-polarized gate-tuned transport property of a four-terminal MoS2 device: a theoretical study

Journal of Materials Science - The transport property of a four-terminal MoS2NR/V7(Bz)8 device is computed within the framework of density functional theory combined with the nonequilibrium...     

Magnetic and phonon transport properties of two-dimensional room-temperature ferromagnet VSe2

Journal of Materials Science - The room-temperature intrinsic ferromagnetism of monolayer VSe2 with a van der Waals gap provides an exciting opportunity for both the fundamental studies and future...     

[Ca24Al28O64]4+:4e− electride ceramic realizes mechanical and electrical transport properties coordinated regulation via composite ZrO2

Journal of Materials Science: Materials in Electronics - The [Ca24Al28O64]4+:4e? (C12A7:e?) electride is a conductive oxide ceramic with high injected electron concentration and low...     

Investigation of various commercial PEDOT:PSS (poly(3,4-ethylenedioxythiophene)polystyrene sulfonate) as a hole transport layer in lead iodide-based inverted planar perovskite solar cells

Journal of Materials Science: Materials in Electronics - Inverted-type perovskite solar cells have drawn remarkable attention due to solution-processable, straightforward configuration, low-cost...     

Temperature induced electrical transport in n-Bi2Te3/p-InAs thermoelectric heterojunctions

Journal of Materials Science - Thermoelectric semiconductor devices have recently attracted more interest since their electrical properties can be further adjusted by the temperature field. Many...     

Electrical transport in new Tl2OCl2 and Tl4Cl6

Journal of Materials Science - Electrical conductivity, σ, Seebeck coefficient, S, measurements on the pressed solid pellets of both Tl2OCl2 and Tl4Cl6 have been carried out in the temperature...     

On the high-energy electron beam irradiation-induced defects in Cu2SnSe3 system: an effort towards modifying the structure,microstructure, and thermoelectric transport

Journal of Materials Science: Materials in Electronics - We present report on modulating thermoelectric transport in Cu2SnSe3 system via irradiating high-energy electrons of energy of about...     

Optimization of electrical and thermal transport properties of layered Bi2O2Se via Nb doping

Journal of Materials Science - Layered oxygen-containing compound Bi2O2Se is a promising n-type thermoelectric material, favored by its considerably high Seebeck coefficient and low thermal...     

Crystal structure,ion transport and optical properties of new high-conductivity Ag7(Si1 − xGex)S5I solid solutions

Journal of Materials Science - The crystal structure of Ag7(Si0.8Ge0.2)S5I, Ag7(Si0.6Ge0.4)S5I, Ag7(Si0.4Ge0.6)S5I and Ag7(Si0.2Ge0.8)S5I solid electrolytes, grown by vertical zone crystallization...     

Spin transport and injection in high-In content InGaAs/InAIAs heterostructures

Recent progresses in the research area of so-called ‘semiconductor spintronics’ carried out at Center for Nano Materials and Technology, JAIST are reviewed. Based on the successful MBE growth of new type narrow-gap heterostructure composed of In_0.75Ga_0.25As and In_0.75Al_0.25As, we recently have developed spin-injection experiment in planar four-terminal device made on the modulaton-doped normal type heterojunction, spin-filtering analysis in resonant tunneling diode with asymmetric center well and Ni emitter, and quantum transport analysis in mesoscopic devices made on the heterojunction. Some important results obtained in those experiments are reported and discussed.