一种8位100 MS/s的低功耗流水线型ADC

基于0.35 μm CMOS工艺,设计并制作了一种低功耗流水线型ADC。分析了ADC结构对功耗的影响,采用1.5位/级的流水线结构来最小化功耗,并提升速度。为进一步降低功耗,设计了一种不带补偿并可调节相位裕度的共源共栅跨导放大器(OTA)和改进的比较器。测试结果显示,该ADC在3 V电源电压、100 MS/s采样速率下,功耗为65 mW,面积为0.73 mm²,在模拟输入频率为70.1 MHz和141 MHz下的无杂散动态范围(SFDR)分别为59.8 dBc和56.5 dBc。该ADC可应用于需要欠采样的通信系统中。     

用于14位210 MS/s电荷域ADC的4.5位子级电路

该文提出了一种用于高速高精度电荷域流水线模数转换器(ADC)的电荷域4.5位前端子级电路。该4.5位子级电路使用增强型电荷传输(BCT)电路替代传统开关电容技术流水线ADC中的高增益带宽积运放来实现电荷信号传输和余量处理,从而实现超低功耗。所提4.5位子级电路被运用于一款14位210 MS/s电荷域ADC中作为前端第1级子级电路,并在1P6M 0.18 μm CMOS工艺下实现。测试结果显示,该14位ADC电路在210 MS/s条件下对于30.1 MHz单音正弦输入信号得到的无杂散动态范围为85.4 dBc,信噪比为71.5 dBFS, ADC内核面积为3.2 mm2,功耗仅为205 mW。     

元器件快讯

12与14位210 MS/s ADC德州仪器推出与ADS5546引脚兼容的12、14位ADCADS5547与ADS5527,能够在采样速率为210 MS/s、输入频率为70 MHz的情况下提供高达73.3 dBFS的信噪比(SNR)和85 dBc的无杂散动态范围(SFDR)。为雷达与成像技术提供更大的范围和更高的分辨率,为数字预失真解决方案提供更精确的功率放大器,实现更高质量的视频与影像系统。两款产品均采用7 mm×7 mm无引线封装。其它特性包括:可编程功率调整;低功耗:内核为1 W,总功耗为1.2 W;内部采样与保持;并行CMOS与DDR LVDS输出选项;     

基于0.13 μm CMOS工艺的14位50 MS/s流水线ADC

设计并实现了一种14位50 MS/s流水线ADC。采用无采保放大器的前端电路和运放共享技术,在达到速度及精度要求的同时降低了功耗。该流水线ADC采用0.13 μm标准CMOS工艺实现,芯片尺寸为2.7 mm×2.1 mm。在电源电压为1.2 V、采样速率为50 MS/s、模拟输入信号频率为28 MHz的条件下进行测试。结果表明,该ADC的功耗为91.2 mW,SFDR为82.39 dBFS,SNR为72.45 dBFS,SNDR为71.13 dB,ENOB为11.52 bit,THD为-81.28 dBc,DNL在±1 LSB以内,INL在±3 LSB以内,品质因子FOM为0.62 pJ/step。     

一种10位250 MS/s电荷域流水线ADC

提出了一种高速、低功耗、小面积的10位 250 MS/s 模数转换器(ADC)。该ADC采用电荷域流水线结构,消除了高增益带宽积的跨导运算放大器,降低了ADC功耗。采用流水线逐级电荷缩减技术,降低了后级电路的电荷范围,减小了芯片面积。测试结果表明,在250 MS/s采样速率、9.9 MHz输入正弦信号的条件下,该ADC的无杂散动态范围(SFDR)为64.4 dB,信噪失真比(SNDR)为57.7 dB,功耗为45 mW。     

MAX1951x：双通道10位ADC

Maxim推出引脚兼容的双通道、10位、65／100／130Msps ADC系列产品MAX19515／MAX19516／MAX19517。器件具有低功耗,每个模拟通道的功耗为43mW（MAX19515）、57roW（MAX19516）和75roW（MAX19517）。另外,该系列ADC具有优异的动态性能：70MHz时的信噪比（SNR）为60dBFS、SFDR为85dBc。MAX19515／MAX19516／MAX19517集低功耗和优异的动态性能于一体,是超声和医学成像、便携式仪表以及低功耗数据采集系统等功耗敏感的便携式应用的理想选择。     

一种高速低功耗10位逐次逼近模数转换器设计

通过分析并优化逐次逼近模数转换器(SAR ADC)的工作时序,设计并实现了一种高速、低功耗、具有误差补偿的10位100 MS/s A/D转换器。该芯片采用TSMC 0.13 μm CMOS工艺进行设计。后仿真结果表明,在1.2 V电源电压、20.3125 MHz输入信号频率、100 MHz采样频率下,模数转换器的无杂散动态范围(SFDR)为68.1 dB,有效位数(ENOB)达到9.41位,整体功耗为0.865 mW,FoM值为15 fJ/conv。芯片核心电路面积为(0.02×0.02) mm²。     

一种低功耗14位10MS/s流水线A/D转换器

基于0.6μm BiCMOS工艺,设计了一个低功耗14位10MS/s流水线A/D转换器.采用了去除前端采样保持电路、共享相邻级间的运放、逐级递减和设计高性能低功耗运算放大器等一系列低功耗技术来降低ADC的功耗.为了减小前端采样保持电路去除后引入的孔径误差,采用一种简单的RC时间常数匹配方法.仿真结果表明,当采样频率为10MHz,输入信号为102.5kHz,电源电压为5V时,ADC的信噪失真比(SNDR)、无杂散谐波范围(SFDR)、有效位数(ENOB)和功耗分别为80.17dB、87.94dB、13.02位和55mW.     

一种280mW,78dB SNR,88dB SFDR流水线ADC设计

为满足接收机系统的应用需求,采用标准0.18μm CMOS工艺设计实现了一款16 bit高精度高速pipelined ADC,电源电压1.8 V,采样频率120 MHz。为了降低SHA-less结构带来的非线性问题,引入高线性输入缓冲器。测试结果表明,在不明显增加芯片功耗的同时能够实现较高的性能,有效位数达到13 bit。输入信号57 MHz,幅度-1 dBFS时,SNR、SNDR、SFDR分别达到78 dBFS、78 dBFS、88 dB;输入信号313 MHz、幅度-1 dBFS时,SNR、SNDR、SFDR分别达到70 dBFS、70 dBFS、78 dB。     

用于12位250 MS/s电荷域ADC的2.5位子级电路

提出了一种用于12位250 MS/s电荷域流水线模数转换器(ADC)的2.5位子级电路。采用增强型电荷传输电路,实现电荷传输和余量电荷计算,省去了传统流水线ADC中的高性能运放,大幅降低了ADC的功耗。该2.5位子级电路被应用于一种12位250 MS/s电荷域流水线ADC中,并采用0.18 μm CMOS工艺实现。测试结果表明,在250 MS/s采样率、20.1 MHz输入频率下,该ADC的SNR为65.3 dBFS。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks