Investigation of structural,optical, antibacterial,and dielectric properties of V-doped copper oxide thin films: Comparison with undoped copper oxide thin films

Vanadium doped Copper oxide (CO) thin films were prepared by the sol-gel dip-coating method. The properties of thin films were examined by X-Ray Diffractometer (XRD), UV–Visible-NIR spectrophotometry, and dielectric properties analyzer. The antibacterial and photocatalytic properties were also determined. XRD spectra revealed the dual-phase of copper oxide (cuprite and tenorite) for all percentages of V with no other impurity peak. Tauc's relation is used to probe the optical band gap which is reduced from 1.96 to 1.64 eV with an increase in vanadium doping percentage. The impurity band coalesces with the conduction band of copper oxide to decrease the band gap. Dielectric constant measurements reveal that the Ac conductivity of thin films increases with an increase in V doping percentage.     

Investigation of optical,structural and morphological properties of nanostructured boron doped TiO 2 thin films

Pure and different ratios (1, 3, 5, 7 and 10%) of boron doped TiO₂ thin films were grown on the glass substrate by using sol–gel dip coating method having some benefits such as basic and easy applicability compared to other thin film production methods. To investigate the effect of boron doped on the physical properties of TiO₂, structural, morphological and optical properties of growth thin films were examined. 1% boron-doping has no effect on optical properties of TiO₂ thin film; however, optical properties vary with > 1%. From X-ray diffraction spectra, it is seen that TiO₂ thin films together with doping of boron were formed along with TiB₂ hexagonal structure having (111) orientation, B₂O₃ cubic structure having (310) orientation, TiB_0·024O ₂ tetragonal structure having rutile phase (110) orientation and polycrystalline structures. From SEM images, it is seen that particles together with doping of boron have homogeneously distributed and held onto surface.     

离子束后处理对TiO2薄膜光学性质影响的实验研究

采用中频反应磁控溅射方法和线性阳极层离子源实现了TiO2薄膜在线制备和在线离子束后处理。通过对薄膜光学性质的研究,发现氧离子束后处理对提高薄膜折射率,降低薄膜吸收率具有明显效果。为工业生产中,薄膜的在线制备及后处理提供了切实可行的手段。     

Ti靶及TiO2靶溅射TiO2薄膜微观形貌、结构及光学性质研究

利用射频磁控溅射技术通过Ti靶及TiO2靶在氩氧气氛中同时溅射制备TiO2薄膜,并对所得的样品进行不同温度的退火处理。采用X射线衍射、扫描电子显微镜、拉曼光谱和吸收谱研究了不同的靶材及退火温度对TiO2薄膜晶体结构、微观形貌及光学性质的影响。结果表明:由于靶材的不同,Ti靶溅射时氧分压较低,造成薄膜中存在大量的氧缺陷,晶相发育不完善,颗粒相比TiO2靶溅射时较小,从XRD和拉曼光谱来看,Ti靶溅射得到的TiO2薄膜更有利于金红石相的形成。薄膜的透过率随退火温度的升高而降低,TiO2靶材溅射的薄膜的光学带隙随温度升高而明显降低,而Ti靶得到的薄膜的光学带隙对退火温度的依赖关系不明显。     

On the optical, structural, and morphological properties of ZrO2 and TiO2 dip-coated thin films supported on glass substrates

This article reports the optical and morphological properties of dip-coated TiO₂ and ZrO₂ thin films on soda-lime glass substrates by metal-organic decomposition (MOD) of titanium^IV and zirconium^IV acetylacetonates respectively. Thermogravimetric and differential thermal analysis (DTA–TG) were performed on the precursor powders, indicating pure TiO₂ anatase and tetragonal ZrO₂ phase formation. Phase crystallization processes took place in the range of 300–500 °C for anatase and of 410–500 °C for ZrO₂. Fourier Transform Infrared Spectroscopy (FT-IR) was used to confirm precursor bidentate ligand formation with keno-enolic equilibrium character. Deposited films were heated at different temperatures, and their structural, optical and morphological properties were studied by grazing-incidence X-ray Diffraction (GIXRD) and X-Ray Photoelectron Spectroscopy (XPS), Ultraviolet Visible Spectroscopy (UV-Vis), and Atomic Force Microscopy (AFM) respectively. Film thinning and crystalline phase formation were enhanced with increasing temperature upon chelate decomposition. The optimum annealing temperature for both pure anatase TiO₂ and tetragonal ZrO₂ thin films was found to be 500 °C since solid volume fraction increased with temperature and film refractive index values approached those of pure anatase and tetragonal zirconia. Conditions for clean stoichiometric film formation with an average roughness value of 2 nm are discussed in terms of material binding energies indicated by XPS analyses, refractive index and solid volume fraction obtained indirectly by UV-Vis spectra, and crystalline peak identification provided by GIXRD.     

Effect of fluorine doping and SiO2 under-layer on the optical properties of TiO2 thin films

Fluorine-doped TiO₂ thin films were prepared via sol–gel method. Optical constants were obtained by fitting theoretical UV–Vis transmittance spectra to experimental ones within Forouhi–Bloomer dispersion model. The results show that doping with fluorine does not affect the absorption edge of TiO₂ films. The linear part of the absorption edge for the films on SiO₂/soda lime substrate is red shifted in comparison with that on bare soda lime and a broadened ‘tail’ up to ∼ 2.7 eV is observed. It is attributed to additional localized states within the TiO₂ band gap introduced by structural defects in titania lattice originated from TiO₂/SiO₂ interface.     

Effect of heat treatment on the structural and optical properties of CuInTe2 thin films

The CuInTe2 thin films were prepared by thermal vacuum evaporation of the bulk compound. The structural and optical properties in the temperature range 300–47 K of thin films grown on glass substrates and annealed in vacuum were studied. The films were investigated by X-ray diffraction and electron microscope techniques. The calculated lattice constants for CuInTe₂ powder were found to bea=0.619 nm andc –1,234 nm. From the reflection and transmission data, the optical constants, refractive indexn, absorption index,k, and the absorption coefficient, , werw computed. The optical energy gap was determined for CuInTe₂ thin films heat treated at different temparatures for different periods of time. It was found thatE _g increases with both increasing temperature and time of annealing.     

金属网格对制备TiO2薄膜及其光学特征的影响

使用直流磁控溅射装置,通过在溅射过程中加入不同的金属网格,300 ℃条件下在玻璃衬底上制备了不同晶粒尺寸的TiO2薄膜.利用X射线衍射谱(XRD)、场发射扫描电子显微镜(SEM)对薄膜的结构和表面形貌进行了分析,并使用紫外一可见分光光度计研究了TiO2薄膜的透射和吸收光谱.研究结果表明:金属网格在磁控溅射过程中能有效减小TiO2薄膜的晶粒尺寸,金属网格的网孔尺寸越小,晶粒尺寸越小,吸收边蓝移越明显.     

影响Sn电介质绝缘薄膜结构特性的因素

用热蒸发法为MOTOROLA中国电子有限公司手持电话外壳表面沉积了具有一定金属光泽的Sn电介质绝缘薄膜,论述了在真空度参数一定时,薄膜沉积时间、蒸发输入电流,以及蒸发源的排列方式诸方面的因素对沉积Sn电介质薄膜绝缘性能结构的影响.为此设计了专用环状面源层间互补蒸发电路,用于MOTOROLA中国电子有限公司及其在中国以外的公司生产手持电话外壳表面沉积Sn电介质绝缘薄膜.在生产实际过程中,有针对性地研究了影响沉积Sn电介质绝缘薄膜的各种因素,有效的控制了沉积Sn电介质绝缘薄膜的工艺参数.对指导大规模生产有较高参考价值.     

PZT薄膜厚度对BMT/PZT复合薄膜结构及介电性能的影响

采用液相旋涂法制备了Ba(Mg1/3Ta2/3)O3(BMT)/Pb(Zr0.52Ti0.48)O3(PZT)复合薄膜,研究了PZT薄膜厚度对BMT/PZT复合薄膜结构及介电性能的影响。随着PZT薄膜厚度的增加,BMT/PZT复合薄膜的介电常数呈线性增加。当PZT薄膜的厚度较小时,会明显地增加BMT/PZT复合薄膜的介电损耗;当继续增加PZT薄膜的厚度,介电损耗反而下降直到与BMT薄膜的介电损耗值接近。这是由于PZT的介电常数与介电损耗均明显高于BMT薄膜所致,而异质界面的存在抑制了PZT薄膜中畴壁的运动,使其对复合薄膜介电损耗的影响减弱。研究结果表明,PZT薄膜的引入可以提升BMT薄膜的介电常数而对介电损耗的影响不大。     

低压MOCVD生长TiO2薄膜结构和电性能研究

采用低压MOCVD法沉积生长了TiO2薄膜，研究了Si衬底取向，退火温度，退火时间，退火气氛对其结构和电性能的影响，结果表明，500℃下沉积生长于Si(111)和Si(100)上的TiO2薄膜为锐钛矿相多晶膜，经过600℃以上退火处理后，均可转变为纯金红石相结构。其中，Si(111)上的TiO2薄膜更容易转变为金红石相结构，而Si(100)上的TiO2薄膜，需要更高的退火温度和更长的退火时间才能转变为金红石结构。结果还表明，退火气氛中氧分压的大小对TiO2薄膜的结构无明显的影响。     

Intrinsic optical and structural properties of SrS thin films

SrS thin films were deposited by electron beam evaporation on heated silica substrates. The optical properties of the layers – complex refractive index and optical band gap –were derived from optical transmission spectra, measured by means of UV-VIS-NIR spectrophotometry. The influence of post-deposition annealing by rapid thermal processing (RTP) was studied. X-ray powder diffraction (XRD) was used to study the film crystal structure and preferential orientation.     

Structural, morphological and optical properties of thermal annealed TiO thin films

Structural, morphological and optical properties of TiO thin films grown by single source thermal evaporation method were studied. The films were annealed from 300 to 520 °C in air after evaporation. Qualitative film analysis was performed with X-ray diffraction, atomic force microscopy and optical transmittance and reflectance spectra. A correlation was established between the optical properties, surface roughness and growth morphology of the evaporated TiO thin films. The X-ray diffraction spectra indicated the presence of the TiO₂ phase for the annealing temperature above 400 °C.     

Influence of calcination temperature on structural and optical properties of TiO2-SiO2 thin films prepared by sol-gel dip coating

We prepared TiO₂-SiO₂ thin films with various TiO₂/SiO₂ ratios by sol-gel dip coating method and explored the dependence of their structural and optical properties on calcination temperature. The absorption peaks relevant to Si—O, Si—O—Ti and Ti—O bonds appeared in the FTIR spectra. With increasing TiO₂ content, the intensity of Si—O bond peaks decreases and that of Ti—O bond peaks increases. The XRD results show that the temperature of transformation from amorphous to anatase phase is lowered as TiO₂ content increases. The crystallite size of anatase phase in composite thin films increases with increasing TiO₂ content and calcination temperature. At 1000°C, the mixed phase of anatase and rutile appears in the pure TiO₂ thin films. The rutile films are denser than the anatase films. The increase in refractive index of composite thin films with calcination temperature is related to the decreased thickness and increased density as a result of evaporation of water and organic matters below 400°C. On the other hand, it is related to the change in the crystal phase and crystallite size of the films over 400°C.     

Effect of alumina doping on structural, electrical, and optical properties of sputtered ZnO thin films

A systematic study of the influence of alumina (Al₂O₃) doping on the optical, electrical, and structural characteristics of sputtered ZnO thin films is reported in this study. The ZnO thin films were prepared on 1737F Corning glass substrates by R.F. magnetron sputtering from a ZnO target mixed with Al₂O₃ of 0-4 wt.%. X-ray diffraction (XRD) analysis demonstrates that the ZnO thin films with Al₂O₃ of 0-4 wt.% have a highly (002) preferred orientation with only one intense diffraction peak with a full width at half maximum (FWHM) less than 0.5°. The electrical properties of the Al₂O₃-doped ZnO thin films appear to be strongly dependent on the Al₂O₃ concentration. The resistivity of the films decreases from 74 Ω·cm to 2.2 × 10^− 3 Ω·cm as the Al₂O₃ content increases from 0 to 4 wt.%. The optical transmittance of the Al₂O₃-doped ZnO thin films is studied as a function of wavelength in the range 200-800 nm. It exhibits high transparency in the visible-NIR wavelength region with some interference fringes and sharp ultraviolet absorption edges. The optical bandgap of the Al₂O₃-doped ZnO thin films show a short-wavelength shift with increasing of Al₂O₃ content.     

Photoluminescence properties of TiO2: Eu3 + thin films deposited on different substrates

Strong photoluminescence of Eu^3 + due to intra 4f transitions are obtained from amorphous xerogel TiO₂: Eu^3 + films prepared by sol–gel method and treated at a low temperature of 100 °C. The films are deposited on four different substrates: Si, Al, AAO (anodic alumina oxide) and porous silicon. We find that the luminescence intensity on AAO substrate increased 4 times comparing with that of Si or Al, and luminescence intensity decreases obviously on porous silicon substrate. Energy transfer mechanism from TiO₂ host to Eu^3 + is deduced through analysis of photoluminescence and photoluminescence excitation spectrum. Concentration quenching of Eu^3 + does not appear even at high atomic concentration of 7.69%.     

Effects of annealing on the optical, structural, and chemical properties of TiO2 and MgF2 thin films prepared by plasma ion-assisted deposition

Effects of thermal annealing at 400 degrees C on the optical, structural, and chemical properties of TiO2 single-layer, MgF2 single-layer, and TiO2/MgF2 narrow-bandpass filters deposited by conventional electron-beam evaporation (CE) and plasma ion-assisted deposition (PIAD) were investigated. In the case of TiO2 films, the results show that the annealing of both CE and PIAD TiO2 films increases the refractive index slightly and the extinction coefficient and surface roughness greatly. Annealing decreases the thickness of CE TiO2 films drastically, whereas it does not vary that of PIAD TiO2 films. For PIAD MgF2 films, annealing increases the refractive index and decreases the extinction coefficient drastically. An x-ray photoelectron spectroscopy analysis suggests that an increase in the refractive index and a decrease in the extinction coefficient for PIAD MgF2 films after annealing may be related to the enhanced concentration of MgO in the annealed PIAD MgF2 films and the changes in the chemical bonding states of Mg 2p, F 1s, and O is. It is found that (TiO2/MgF2) multilayer filters, consisting of PIAD TiO2 and CE MgF2 films, are as deposited without microcracks and are also thermally stable after annealing.     

Effect of annealing on the structural and optical properties of InSe bilayer thin films

InSe bilayer thin films with different thickness were prepared on to a glass substrate by sequential thermal evaporation. Preparation and post deposition treatment conditions were optimized in order to achieve effective bilayer mixing. The influence of bilayer film thickness and annealing temperature on the structural and optical properties was investigated. The prepared films were characterized by X-ray diffraction analysis, scanning electron microscopy, energy dispersive X-ray analysis, UV-Visible spectroscopy, photoconduction and resistivity measurement. Structural studies show that the material undergoes phase transition with thickness, due to co-existence of many phases. Morphological analysis revealed that Se content plays an important role in determining the surface morphology of the film. It has been observed that grain growth and grain splitting phenomena depend on film thickness and annealing temperature. From the photoconduction measurements, the photocurrent increases rapidly when the sample is illuminated using 135 K Lux of white light. Absorption coefficient is in the order of 10⁴ cm⁻¹, makes the InSe thin film useful for the preparation of absorber layer in hybrid solar cell.