Hydrothermal synthesis and characterization of silica nanowires using rice husk ash: an agricultural waste

One-dimensional structures are the smallest dimension structures that represent a unique system for analyzing phenomena at the Nanoscale. Nanowires, which can be used for space confined transport phenomena and enhanced optical properties, are believed to play significant role in the function and integration of Nano electronics and Nano optoelectronics devices. Nanowires with well controlled morphology and extremely high aspect ratio can be obtained by various complex techniques but the demand of upcoming future technology is to synthesize large scale 1D nanostructures with simple and efficient cost effective methods. With this view, in the present study, large scale amorphous silica nanowires (SiO₂ NWs) were synthesized from rice husk ash using Fe₂O₃ assisted hydrothermal method and characterizations of these nanowires along with rice husk ash (RHA) containing porous silica, were done using various techniques such as X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), transmission electron microscopy (TEM), UV–Vis spectroscopy and photoluminescence (PL). The structural study of silica nanowires were studied using XRD, indicating the amorphous phases of silica in both RHA as well as nanowires. The chemical composition along with symmetric or anti-symmetric starching bonds of amorphous SiO₂ NWs and RHA was confirmed using FTIR. The morphological study was done using SEM and TEM. The SiO₂ NWs so obtained have diameter in the range from 15 to 35 nm and length about 0.5 µm. In optical study, the enhanced band gap of amorphous SiO₂ NWs as compared to RHA was observed using UV–Vis spectroscopy. PL spectroscopy shows strong blue light emission by silica nanowires as compare to RHA. This study opens up new areas for research to modulate optoelectronic properties of SiO₂ nanowires for the novel device application.     

Composition‐Graded Cesium Lead Halide Perovskite Nanowires with Tunable Dual‐Color Lasing Performance

Cesium lead halide (CsPbX₃) perovskite has emerged as a promising low‐threshold multicolor laser material; however, realizing wavelength‐tunable lasing output from a single CsPbX₃ nanostructure is still constrained by integrating different composition. Here, the direct synthesis of composition‐graded CsPbBr_xI_3?x nanowires (NWs) is reported through vapor‐phase epitaxial growth on mica. The graded composition along the NW, with an increased Br/I from the center to the ends, comes from desynchronized deposition of cesium lead halides and temperature‐controlled anion‐exchange reaction. The graded composition results in varied bandgaps along the NW, which induce a blueshifted emission from the center to the ends. As an efficient gain media, the nanowire exerts position‐dependent lasing performance, with a different color at the ends and center respectively above the threshold. Meanwhile, dual‐color lasing with a wavelength separation of 35 nm is activated simultaneously at a site with an intermediate composition. This position‐dependent dual‐color lasing from a single nanowire makes these metal halide perovskites promising for applications in nanoscale optical devices.     

Metal-Free Halide Perovskite Single Crystals with Very Long Charge Lifetimes for Efficient X-ray Imaging

Metal-free halide perovskites, as a specific category of the perovskite family, have recently emerged as novel semiconductors for organic ferroelectrics and promise the wide chemical diversity of the ABX₃ perovskite structure with mechanical flexibility, light weight, and eco-friendly processing. However, after the initial discovery 17 years ago, there has been no experimental information about their charge transport properties and only one brief mention of their optoelectronic properties. Here, growth of large single crystals of metal-free halide perovskite DABCO-NH₄Br₃ (DABCO = N-N′-diazabicyclo[2.2.2]octonium) is reported together with characterization of their instrinsic optical and electronic properties and demonstration, of metal-free halide perovskite optoelectronics. The results reveal that the crystals have an unusually large semigap of ≈16 eV and a specific band nature with the valence band maximum and the conduction band minimum mainly dominated by the halide and DABCO²⁺, respectively. The unusually large semigap rationalizes extremely long lifetimes approaching the millisecond regime, leading to very high charge diffusion lengths (tens of μm). The crystals also exhibit high X-ray attenuation as well as being lightweight. All these properties translate to high-performance X-ray imaging with sensitivity up to 173 μC Gy_air⁻¹ cm⁻². This makes metal-free perovskites novel candidates for the next generation of optoelectronics.     

High‐Responsivity Photodetection by a Self‐Catalyzed Phase‐Pure p‐GaAs Nanowire

Defects are detrimental for optoelectronics devices, such as stacking faults can form carrier‐transportation barriers, and foreign impurities (Au) with deep‐energy levels can form carrier traps and nonradiative recombination centers. Here, self‐catalyzed p‐type GaAs nanowires (NWs) with a pure zinc blende (ZB) structure are first developed, and then a photodetector made from these NWs is fabricated. Due to the absence of stacking faults and suppression of large amount of defects with deep energy levels, the photodetector exhibits room‐temperature high photoresponsivity of 1.45 × 10⁵ A W^?1 and excellent specific detectivity (D*) up to 1.48 × 10¹⁴ Jones for a low‐intensity light signal of wavelength 632.8 nm, which outperforms previously reported NW‐based photodetectors. These results demonstrate these self‐catalyzed pure‐ZB GaAs NWs to be promising candidates for optoelectronics applications.     

Substantially Improving Device Performance of All‐Inorganic Perovskite‐Based Phototransistors via Indium Tin Oxide Nanowire Incorporation

All‐inorganic halide perovskites (IHPs) have attracted enormous attention due to their intrinsically high optical absorption coefficient and superior ambient stabilities. However, the photosensitivity of IHP‐based photodetectors is still restricted by their poor conductivities. Here, a facile design of hybrid phototransistors based on the CsPbBr₃ thin film and indium tin oxide (ITO) nanowires (NWs) integrated into a InGaZnO channel in order to achieve both high photoresponsivity and fast response is reported. The metallic ITO NWs are employed as electron pumps and expressways to efficiently extract photocarriers from CsPbBr₃ and inject electrons into InGaZnO. The obtained device exhibits the outstanding responsivity of 4.9 × 10⁶ A W^?1, which is about 100‐fold better than the previous best results of CsPbBr₃‐based photodetectors, together with the fast response (0.45/0.55 s), long‐term stability (200 h in ambient), and excellent mechanical flexibility. By operating the phototransistor in the depletion regime, an ultrahigh specific detectivity up to 7.6 × 10¹³ Jones is achieved. More importantly, the optimized spin‐coating manufacturing process is highly beneficial for achieving uniform InGaZnO‐ITO/perovskite hybrid films for high‐performance flexible detector arrays. All these results can not only indicate the potential of these hybrid phototransistors but also provide a valuable insight into the design of hybrid material systems for high‐performance photodetection.     

Oxygen Vacancies Dominated NiS2/CoS2 Interface Porous Nanowires for Portable Zn–Air Batteries Driven Water Splitting Devices

The development of highly active and stable oxygen evolution reaction (OER) electrocatalysts is crucial for improving the efficiency of water splitting and metal–air battery devices. Herein, an efficient strategy is demonstrated for making the oxygen vacancies dominated cobalt–nickel sulfide interface porous nanowires (NiS₂/CoS₂–O NWs) for boosting OER catalysis through in situ electrochemical reaction of NiS₂/CoS₂ interface NWs. Because of the abundant oxygen vacancies and interface porous nanowires structure, they can catalyze the OER efficiently with a low overpotential of 235 mV at j = 10 mA cm^?2 and remarkable long‐term stability in 1.0 m KOH. The home‐made rechargeable portable Zn–air batteries by using NiS₂/CoS₂–O NWs as the air–cathode display a very high open‐circuit voltage of 1.49 V, which can maintain for more than 30 h. Most importantly, a highly efficient self‐driven water splitting device is designed with NiS₂/CoS₂–O NWs as both anode and cathode, powered by two‐series‐connected NiS₂/CoS₂–O NWs‐based portable Zn–air batteries. The present work opens a new way for designing oxygen vacancies dominated interface nanowires as highly efficient multifunctional electrocatalysts for electrochemical reactions and renewable energy devices.     

Synthesis and growth mechanism of triangular Mn doped CdS nanowires

Triangular Mn-doped CdS nanowires (NWs) were prepared by thermal evaporation of a mixture of CdS and MnCl₂. The morphologies and detailed structures were characterized by a scanning electron microscope, X-ray diffraction, and transmission electron microscope. The Mn concentration plays an important role in synthesis of the triangular NWs. The morphologies can be varied from hexagonal to triangular by adjusting the amount of MnCl₂ in the reaction mixture. The oriented attachment mechanism is demonstrated to be the most suitable mechanism to explain the growth process of the triangular NWs. The photoluminescence shows the intensity of Mn²⁺ emission peak increases as the molar ratio of MnCl₂increases.     

In Situ Growth of MAPbBr3 Nanocrystals on Few‐Layer MXene Nanosheets with Efficient Energy Transfer

The performance of perovskite nanocrystals (NCs) in optoelectronics and photocatalysis is severely limited by the presence of large amounts of crystal boundaries in NCs film that greatly restricts energy transfer. Creating heterostructures based on perovskite NCs and 2D materials is a common approach to improve the energy transport at the perovskite/2D materials interface. Herein, methylamine lead bromide (MAPbBr₃, MA: CH₃NH₃⁺) perovskite NCs are homogeneously deposited on highly conductive few‐layer MXene (Ti₃C₂T_x) nanosheets to form heterostructures through an in situ solution growth method. An optimal mixed solvent ratio is essential to realize the growth of perovskite NCs on Ti₃C₂T_x nanosheets. Time‐resolved photoluminescence spectroscopy, transient absorption spectroscopy, and the photoresponse of electron‐ and hole‐only photoelectric conversion devices reveal the interfacial energy transfer behavior within MAPbBr₃/Ti₃C₂T_x heterostructures. The present investigation may provide a useful guide toward use of halide perovskite/2D material heterostructures in applications such as photocatalysis as well as optoelectronics.     

Boosting Electrochemical Catalysis and Nonenzymatic Sensing Toward Glucose by Single-Atom Pt Supported on Cu@CuO Core–Shell Nanowires

It is critical to develop high-performance electrocatalyst for electrochemical nonenzymatic glucose sensing. In this work, a single-atom Pt supported on Cu@CuO core–shell nanowires (Pt₁/Cu@CuO NWs) for electrochemical nonenzymatic glucose sensor is designed. Pt₁/Cu@CuO NWs exhibit excellent electrocatalytic oxidation toward glucose with 70 mV lower onset potential (0.131 V) and 2.4 times higher response current than Cu NWs. Sensors fabricated using Pt₁/Cu@CuO NWs also show high sensitivity (852.163 µA mM⁻¹ cm⁻²), low detection limit (3.6 µM), wide linear range (0.01–5.18 µM), excellent selectivity, and great long-term stability. The outstanding sensing performance of Pt₁/Cu@CuO NWs, investigated by experiments and density functional theory (DFT) calculations, is attributed to the synergistic effect between Pt single atoms and Cu@CuO core–shell nanowires that generates strong binding energy of glucose on the nanowires. The work provides a new pathway for exploring highly active SACs for electrochemical nonenzymatic glucose sensor.     

Ultrathin CsPbX3 Nanowire Arrays with Strong Emission Anisotropy

1D nanowires of all‐inorganic lead halide perovskites represent a good architecture for the development of polarization‐sensitive optoelectronic devices due to their high absorption efficient, emission yield, and dielectric constants. However, among as‐fabricated perovskite nanowires with the lateral dimensions of hundreds nanometers so far, the optical anisotropy is hindered and rarely explored owing to the invalidating of electrostatic dielectric mismatch in the physical dimensions. Here, well‐aligned CsPbBr₃ and CsPbCl₃ nanowires with thickness T down to 15 and 7 nm, respectively, are synthesized using a vapor phase van der Waals epitaxial method. Strong emission anisotropy with polarization ratio up to ≈0.78 is demonstrated in the nanowires with T < 40 nm due to the electrostatic dielectric confinement. With the increasing of thickness, the polarization ratio remarkably reduces monotonously to ≈0.17 until T ≈140 nm; and further oscillates in a small amplitude owing to the wave characteristic of light. These findings not only represent a demonstration of perovskite‐based polarization‐sensitive light sources, but also advance fundamental understanding of their polarization properties of perovskite nanowires.     

Fabry–Perot Microcavity Modes in Single GaP/GaNP Core/Shell Nanowires

Semiconductor nanowires (NWs) are attracting increasing interest as nanobuilding blocks for optoelectronics and photonics. A novel material system that is highly suitable for these applications are GaNP NWs. In this article, we show that individual GaP/GaNP core/shell nanowires (NWs) grown by molecular beam epitaxy on Si substrates can act as Fabry‐Perot (FP) microcavities. This conclusion is based on results of microphotoluminescence (μ‐PL) measurements performed on individual NWs, which reveal periodic undulations of the PL intensity that follow an expected pattern of FP cavity modes. The cavity is concluded to be formed along the NW axis with the end facets acting as reflecting mirrors. The formation of the FP modes is shown to be facilitated by an increasing index contrast with the surrounding media. Spectral dependence of the group refractive index is also determined for the studied NWs. The observation of the FP microcavity modes in the GaP/GaNP core/shell NWs can be considered as a first step toward achieving lasing in this quasidirect bandgap semiconductor in the NW geometry.     

Template Synthesis of Iron Microstructures Based on Track Membranes

Iron nanowires (NWs) were obtained by template synthesis using polymer track membranes in the framework of development of a general method for the synthesis of regular metal nanostructures. The surface topography of NWs was studied by scanning electron microscopy, and the local state of iron atoms was determined by Mössbauer spectrometry.

     

On the growth mechanism of nickel and cobalt nanowires and comparison of their magnetic properties

Magnetic nanowires (NWs) are ideal materials for the fabrication of various multifunctional nanostructures which can be manipulated by an external magnetic field. Highly crystalline and textured nanowires of nickel (Ni NWs) and cobalt (Co NWs) with high aspect ratio (∼330) and high coercivity have been synthesized by electrodeposition using nickel sulphate hexahydrate (NiSO₄·6H₂O) and cobalt sulphate heptahydrate (CoSO₄·7H₂O) respectively on nanoporous alumina membranes. They exhibit a preferential growth along 〈110〉. A general mobility assisted growth mechanism for the formation of Ni and Co NWs is proposed. The role of the hydration layer on the resulting one-dimensional geometry in the case of potentiostatic electrodeposition is verified. A very high interwire interaction resulting from magnetostatic dipolar interactions between the nanowires is observed. An unusual low-temperature magnetisation switching for field parallel to the wire axis is evident from the peculiar high field M(T) curve.      

Lead-Free,Luminescent Perovskite Nanocrystals Obtained through Ambient Condition Synthesis

Heterovalently substituting toxic lead is an increasingly popular design strategy to obtain environmentally sustainable variants of the exciting material class of halide perovskites. Perovskite nanocrystals (NCs) obtained through solution-based methods exhibit exceedingly high optical quality. Unfortunately, most of these synthesis routes still require reaction under inert gas and at very high temperatures. Herein a novel synthesis routine for lead-free double perovskite (LFDP) NCs is presented. An approach based upon the hot injection and ligand-assisted reprecipitation (LARP) methods to achieve a low-temperature and ambient atmosphere-based synthesis for manganese-doped Cs₂NaBiCl₆ NCs is presented. Mn incorporation is critical for the otherwise non-emissive material, with a 9:1 Bi:Mn precursor ratio maximizing the bright orange photoluminescence (PL) and quantum yield (QY). Higher synthesis temperatures slightly increase the material's performance, yet NCs synthesized at room temperature are still emissive, highlighting the versatility of the synthetic approach. While the material's indirect bandgap limits its appeal for optoelectronics, this feature could benefit photocatalysis due to longer carrier lifetimes. Moreover, the developed synthesis is facile and can rapidly be adapted to other more viable material compositions and up-scaled to realize applications directly.     

Heterojunction solar cells with integrated Si and ZnO nanowires and a chalcopyrite thin film

ZnO nanowires (NWs) have been successfully synthesized using a hydrothermal technique on both glass and silicon substrates initially coated with a sputtered ZnO thin film layer. Varying ZnO seed layer thicknesses were deposited to determine the effect of seed layer thickness on the quality of ZnO NW growth. The effect of growth time on the formation of ZnO NWs was also studied. Experimental results show that these two parameters have an important effect on formation, homogeneity and vertical orientation of ZnO NWs. Silicon nanowires were synthesized by a Ag-assisted electroless etching technique on an n-type Si (100) wafer. SEM observations have revealed the formation of vertically-aligned Si NWs with etching depth of ∼700 nm distributed over the surface of the Si. An electron-beam evaporated chalcopyrite thin film consisting of p-type AgGa_0.5In_0.5Se₂ with ∼800 nm thickness was deposited on the n-type ZnO and Si NWs for the construction of nanowire based heterojunction solar cells. For the Si NW based solar cell, from a partially illuminated area of the solar cell, the open-circuit voltage, short-circuit current density, fill factor and power conversion efficiency were 0.34 V, 25.38 mA cm⁻², 63% and 5.50%, respectively. On the other hand, these respective parameters were 0.26 V, 3.18 mA cm⁻², 35% and 0.37% for the ZnO NW solar cell.     

Fluorinated 2D Lead Iodide Perovskite Ferroelectrics

Hybrid perovskite materials are famous for their great application potential in photovoltaics and optoelectronics. Among them, lead‐iodide‐based perovskites receive great attention because of their good optical absorption ability and excellent electrical transport properties. Although many believe the ferroelectric photovoltaic effect (FEPV) plays a crucial role for the high conversion efficiency, the ferroelectricity in CH₃NH₃PbI₃ is still under debate, and obtaining ferroelectric lead iodide perovskites is still challenging. In order to avoid the randomness and blindness in the conventional method of searching for perovskite ferroelectrics, a design strategy of fluorine modification is developed. As a demonstration, a nonpolar lead iodide perovskite is modified and a new 2D fluorinated layered hybrid perovskite material of (4,4‐difluorocyclohexylammonium)₂PbI₄, 1 , is obtained, which possesses clear ferroelectricity with controllable spontaneous polarization. The direct bandgap of 2.38 eV with strong photoluminescence also guarantees the direct observation of polarization‐induced FEPV. More importantly, the 2D structure and fluorination are also expected to achieve both good stability and charge transport properties. 1 is not only a 2D fluorinated lead iodide perovskite with confirmed ferroelectricity, but also a great platform for studying the effect of ferroelectricity and FEPV in the context of lead halide perovskite solar cells and other optoelectronic applications.     

Postsynthetic Doping of MnCl2 Molecules into Preformed CsPbBr3 Perovskite Nanocrystals via a Halide Exchange‐Driven Cation Exchange

Unlike widely used postsynthetic halide exchange for CsPbX₃ (X is halide) perovskite nanocrystals (NCs), cation exchange of Pb is of a great challenge due to the rigid nature of the Pb cationic sublattice. Actually, cation exchange has more potential for rendering NCs with peculiar properties. Herein, a novel halide exchange‐driven cation exchange (HEDCE) strategy is developed to prepare dually emitting Mn‐doped CsPb(Cl/Br)₃ NCs via postsynthetic replacement of partial Pb in preformed perovskite NCs. The basic idea for HEDCE is that the partial cation exchange of Pb by Mn has a large probability to occur as a concomitant result for opening the rigid halide octahedron structure around Pb during halide exchange. Compared to traditional ionic exchange, HEDCE is featured by proceeding of halide exchange and cation exchange at the same time and lattice site. The time and space requirements make only MnCl₂ molecules (rather than mixture of Mn and Cl ions) capable of doping into perovskite NCs. This special molecular doping nature results in a series of unusual phenomenon, including long reaction time, core–shell structured mid states with triple emission bands, and dopant molecules composition‐dependent doping process. As‐prepared dual‐emitting Mn‐doped CsPb(Cl/Br)₃ NCs are available for ratiometric temperature sensing.     

The growth of pine-leaf-like hierarchical SnO2 nanostructures

Pine-leaf-like SnO₂ hierarchical nanostructures (NSs) were grown by a two-step vapour transport deposition process with a combination of vapour–solid and vapour–liquid–solid mechanisms at the primary and secondary processes, respectively. This type of hierarchical structure consisted of SnO₂ trunk with homo-branching nanowires (NWs). The branched NWs connected the trunk NWs at included angles of 56° and 90° for two different types of hierarchical NSs. Based on the thermodynamic calculation, the formation of branched NWs at those angles are all energetically favourable.     

Chemical Vapor Deposition Growth of High Crystallinity Sb2Se3 Nanowire with Strong Anisotropy for Near‐Infrared Photodetectors

Low‐dimensional semiconductors have attracted considerable attention due to their unique structures and remarkable properties, which makes them promising materials for a wide range of applications related to electronics and optoelectronics. Herein, the preparation of 1D Sb₂Se₃ nanowires (NWs) with high crystal quality via chemical vapor deposition growth is reported. The obtained Sb₂Se₃ NWs have triangular prism morphology with aspect ratio range from 2 to 200, and three primary lattice orientations can be achieved on the sixfold symmetry mica substrate. Angle‐resolved polarized Raman spectroscopy measurement reveals strong anisotropic properties of the Sb₂Se₃ NWs, which is also developed to identify its crystal orientation. Furthermore, photodetectors based on Sb₂Se₃ NW exhibit a wide spectral photoresponse range from visible to NIR (400–900 nm). Owing to the high crystallinity of Sb₂Se₃ NW, the photodetector acquires a photocurrent on/off ratio of about 405, a responsivity of 5100 mA W^?1, and fast rise and fall times of about 32 and 5 ms, respectively. Additionally, owing to the anisotropic structure of Sb₂Se₃ NW, the device exhibits polarization‐dependent photoresponse. The high crystallinity and superior anisotropy of Sb₂Se₃ NW, combined with controllable preparation endows it with great potential for constructing multifunctional optoelectronic devices.     

Oxalic Acid Enabled Emission Enhancement and Continuous Extraction of Chloride from Cesium Lead Chloride/Bromide Perovskite Nanocrystals

All‐inorganic cesium lead halide perovskite nanocrystals (NCs) have demonstrated excellent optical properties and an encouraging potential for optoelectronic applications; however, mixed‐halide perovskites, especially CsPb(Cl/Br)₃ NCs, still show lower photoluminescence quantum yields (PL QY) than the corresponding single‐halide materials. Herein, anhydrous oxalic acid is used to post‐treat CsPb(Cl/Br)₃ NCs in order to initially remove surface defects and halide vacancies, and thus, to improve their PL QY from 11% to 89% for the emission of 451 nm. Furthermore, due to the continuous chelating reaction with the oxalate ion, chloride anions from the mixed‐halide CsPb(Cl/Br)₃ perovskite NCs could be extracted, and green emitting CsPbBr₃ NCs with PL QY of 85% at 511 nm emission are obtained. Besides being useful to improve the emission of CsPb(Cl/Br)₃ NCs, the oxalic acid treatment strategy introduced here provides a further tool to adjust the distribution of halide anions in mixed‐halide perovskites without using any halide additives.