Optical absorption and light-generated current density in chemically deposited antimony sulfide selenide thin films used for solar cell development

Journal of Materials Science: Materials in Electronics - Thin films of antimony sulfide selenide, Sb2SxSe3?x, are viable optical absorbers in heterojunction solar cells. Crystalline thin...     

Microstructure and thermoelectric performance evaluation of p-type (Bi,Sb)2Te3 materials synthesized using mechanical alloying and spark plasma sintering process

Journal of Materials Science: Materials in Electronics - In this paper, three p-type thermoelectric compounds, namely Bi0.5Sb1.5Te3, Bi0.3Sb1.7Te3, and Bi0.2Sb1.8Te3 were manufactured by mechanical...     

Synthesis of various morphologies of Sb2S3 based on amorphous-crystalline transition with related photodegradation

Journal of Materials Science - In this paper, two morphologies of crystalline Sb2S3 as dumbbell-like Sb2S3 and bundle-like Sb2S3 were synthesized by different phase-transformation of...     

Thermoelectric properties of Sb2Te3 thin films by electron beam evaporation

This study applies the thermoelectric grains of Sb2Te3 on conductive glass to evaporate Sb2Te3 thin films by the electron beam evaporation method. Through experimental tests with different evaporation process parameters and film annealing conditions, thin films with better Seebeck coefficient, resistivity (p) and power fact (PF) can be obtained. Experimental results show that when thin films are annealed, their defects can be decreased accordingly, and carrier mobility can be enhanced to further elevate the conductivity of thin films. When the substrate temperature is set at 200 degrees C to fabricate Sb2Te3 thin films by the evaporation process and by annealing at 220 degrees C for 60 minutes, the Seebeck coefficient of Sb2Te3 thin films increase from 87.6 microV/K to 177.7 microV/K; resistivity falls from 6.21 m ohms-cm to 2.53 m ohms-cm and PF can achieve the maximum value of 1.24 10(-3) W/K2 m. Finally, this study attempts to add indium (In) to Sb2Te3 thin films. Indium has been successfully fabricated In3SbTe, thin films. This study also analyzes the effects of In on the thermoelectric properties of In3SbTe2 thin films.     

Investigation of Sb<Subscript>65</Subscript>Se<Subscript>35</Subscript>/Sb multilayer thin films for high speed and high thermal stability application in phase change memory

Sb₆₅Se₃₅/Sb multilayer composite thin films were prepared by depositing the Sb₆₅Se₃₅ and Sb layers alternately. In situ resistance vs. temperature was measured and the crystallization temperature increased with thickening the Sb₆₅Se₃₅ layer in Sb₆₅Se₃₅/Sb thin films. The data retention temperature of 10 years increased greatly from 14 °C of pure Sb to 103 °C of [Sb₆₅Se₃₅(3 nm)/Sb(7 nm)]₃. Also, the band gap was broadened and the surface became smoother. X-ray diffraction patterns for the studied materials revealed that Sb and Sb₂Se₃ phases coexisted in Sb₆₅Se₃₅/Sb thin films. Absorbing the advantages of the fast phase change for Sb, the [Sb₆₅Se₃₅(1 nm)/Sb(9 nm)]₅ multilayer thin film had an ultrafast amorphization speed of 1.6 ns. The results indicated that Sb₆₅Se₃₅/Sb multilayer thin film was a potential phase change material for fast speed and good stability.     

Constructing anisotropic single-Dirac-cones in Bi(1-x)Sb(x) thin films

The electronic band structures of Bi(1-x)Sb(x) thin films can be varied as a function of temperature, pressure, stoichiometry, film thickness, and growth orientation. We here show how different anisotropic single-Dirac-cones can be constructed in a Bi(1-x)Sb(x) thin film for different applications or research purposes. For predicting anisotropic single-Dirac-cones, we have developed an iterative-two-dimensional-two-band model to get a consistent inverse-effective-mass-tensor and band gap, which can be used in a general two-dimensional system that has a nonparabolic dispersion relation as in the Bi(1-x)Sb(x) thin film system.     

The influence of sintering temperature on the structure and electrical properties of ZBCMS varistors

Journal of Materials Science: Materials in Electronics - Zn, Bi, Co, Mn, Sb (ZBCMS) varistors were prepared by traditional solid-state sintering method. The influence of different sintering...     

Vapor growth and optimization of supersaturation for tailoring the physical properties of stoichiometric Sb2Se3 crystalline habits

Journal of Materials Science: Materials in Electronics - The evolution of different morphologies (fibers, whiskers, needles, and spherulites) of antimony selenide (Sb2Se3), devoid of foreign...     

Structural investigation of Ge-Sb-Sn thin films using transmission electron microscopy

Atomistic structures of as-deposited and laser-induced-crystallized Ge-Sb-Sn layers have been examined using high-resolution electron microscopy (HREM) and nanobeam electron diffraction (NBED). Cross-sectional observations were performed on Ge-Sb-Sn thin films embedded in a multi-layered structure. Crystalline clusters were frequently observed in the HREM images of the as-deposited amorphous Ge-Sb-Sn thin film. Autocorrelation function analysis of the HREM image indicated a similarity between the structures of the crystalline clusters and that of rhombohedral Sb. Atomic pair-distribution functions obtained from the halo NBED intensity of the as-deposited amorphous Ge-Sb-Sn films also showed development of local structure whose atomic configuration is similar to that of the rhombohedral Sb. NBED revealed that the structure of the crystallized Ge-Sb-Sn thin film is also close to that of rhombohedral Sb. The atomistic structures of Ge-Sb-Sn thin films were compared with those of Ge-Sb-Te thin films and the rapid crystallization mechanism of these materials was discussed.     

Effect of Initialization Technical Parameters on Optical Absorption of Ge2Sb2Te5 Thin Films

The optical absorption properties of phase-change optical recording thin films subjected to various initialization conditions were investigated. The effects of initialization power and velocity on optical constants of the Ge2Sb2Te5 thin films were also studied. The energy gap of Ge2Sb2Te5 thin films subjected to various initialization conditions was also obtained. It was found that the optical energy gap of the Ge2Sb2Te5 thin films increased with either increasing initialization laser power or decreasing initialization velocity, with peak of 0.908 eV at laser power of 1000 mW or initialization velocity of 4.0 m/s, but the continued increasing initialization laser power or decreasing initialization velocity resulted in the decrease of the optical energy gap. The change of the optical energy gap was discussed on the basis of amorphous crystalline transformation.     

Study of linear and non-linear optical properties of In–Se doped chalcogenide semiconducting glasses

Journal of Materials Science: Materials in Electronics - The present work focuses on the various linear and non-linear optical properties of antimony (Sb) and gallium (Ga) (both 0.1 at.%) doped...     

Structural studies on some doped CdS thin films deposited by thermal evaporation

The influence of the Mn, Se and Sb impurities on the structure and morphology of CdS thin films grown on p⁺ Si wafers was studied. The starting powders were mixed in the same molar ratios (0.3%) and deposited in the same conditions by vacuum thermal evaporation. X-ray diffraction(XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and reflectance studies made on thermal treated thin films (573 K, 2 h in air) evidenced that thin films have a hexagonal oriented structure, and that dopants enter into the CdS lattice merely by substitution. The dopant nature influences the thin film thickness and chemical composition. The doped CdS thin films have roughness in nanometer region and a reflectivity lower than 40%. Silicon substrate acts as a template and favors the retention of Mn and scatters the Sb dopants. The CdS:Se thin film is thicker than CdS:Mn and CdS:Sb ones and is a mixture of doped and undoped nanocrystals.     

Amorphous SnO–Sb2O3–SiO2 glassy anode: high-performance electrode materials for Na-ion batteries

Journal of Materials Science: Materials in Electronics - Amorphous SnO–Sb2O3–SiO2 glass anode prepared by simple mechanical ball milling method. Physical and electrochemical properties...     

Unraveling the effect of mixed charge carrier on the electrical conductivity in MAPbBr3 perovskite due to ions incorporation

Journal of Materials Science: Materials in Electronics - We have investigated the role of H+, Bi3+, and Sb3+ ions incorporation on the structural, morphological, optical, and transport properties...     

Sb mediated formation of Ge/Si quantum dots: Growth and properties

The phenomenon of surfactant (Sb) mediated formation of Ge/Si(100) islands (quantum dots) by means of molecular beam epitaxy is discussed. The limited diffusivity of Si and Ge adatoms caused by the Sb layer leads to a reduction of the size of Ge islands, the increase in the island density, and the sharpening of the interfaces of Ge islands. Thereby, a thin Sb layer is considered to be a powerful tool that provides more freedom in designing Ge quantum dot features. Ge quantum dots, grown via a thin Sb layer and embedded coherently in a Si p-n junction, are revealed to be the origin of the intense photo- and electroluminescence in the spectral range of about 1.5 μm at room temperature.     

多层复合Bi/Sb纳米薄膜的制备及热电性能研究

选取单晶硅作为隔热衬底,Bi和Sb材料作为靶材,采用磁控溅射技术溅射制备多层复合纳米薄膜。研究了当固定调制周期为40nm,Bi和Sb的调制比分别为1∶1、3∶2、4∶1和1∶4时,Bi/Sb超晶格复合薄膜的See-beck系数、电导率和功率因子在160～250K温度范围内随温度的变化。发现当调制比为1∶4时,Bi/Sb薄膜的功率因子明显高于其它3种情况。     

Effect of Sb doping on CVT grown SnTe single crystals electrical and thermal properties

Journal of Materials Science: Materials in Electronics - Pure and Sb-doped SnTe single crystals are grown by chemical vapour transport (CVT) technique. Doping of 5%, 10%, and 15% Sb is done in...     

Dielectric performance and conductive mechanism of KNN-based ceramics prepared via sol–gel core–shell process

Journal of Materials Science: Materials in Electronics - 0.95(Li0.02Na0.50K0.48)(Nb0.95Sb0.05)O3–0.05AgTaO3@BaZrO3 (LNKNbSAT@BZ) lead-free ceramics were prepared via a sol–gel...     

Ga doping induced structural and optical modification in $$\hbox {Ge}_{2}\hbox {Sb}_{2}\hbox {Te}_{5}$$ Ge 2 Sb 2 Te 5 thin films

\(\text {Ge}_2\text {Sb}_2\text {Te}_5\) (GST) is considered a promising candidate for next-generation data storage devices due to its unique property of non-volatility and low power consumption. In present work, the bulk alloys and thin films of (\(\text {Ge}_2\text {Sb}_2\text {Te}_5\))\(_{100-x}\text {Ga}_x\) (x = 0, 3, and 10) are prepared using melt quenching and thermal deposition method, respectively. The effect of Ga doping on host composition is investigated by analyzing X-ray diffraction patterns and field emission scanning electron microscope images. From obtained results, it is found that all doped thin films retained the amorphous nature and exhibited uniform and smooth morphology. In Raman spectra, the appearance of a new peak in 10% Ga-doped GST thin film indicated an alteration in the atomic arrangement of host lattice. Transmission spectra revealed the highly transparent nature of all deposited thin films in the near-infrared region. The optical band gap of Ga-doped GST thin film is lower than that of the pure GST thin film which can be correlated with an increase in band tailing, attributed to an increase in localized defect states in the band gap. Due to the pronounced electronegativity difference between the Ga and Te element, new Ga–Te bonds with a higher number of wrong bonds (Ge–Ge, Sb–Sb, and Ge–Sb) are expected to thermally stabilize the amorphous phase. Such results predict the better performance of Ga-doped GST composition for better performance of phase-change random access memory.

     

聚焦脉冲激光作用下Ge2Sb2Te5薄膜晶化过程及机理

采用聚焦脉冲激光研究了Ge2Sb2Te5薄膜在沉积和激光淬火两种非晶态下反射率与激光脉冲宽度变化的关系，发现沉积态的Ge2Sb2Te5薄膜在晶化触发阶段内的反射率随激光脉冲宽度增加而减小，经过激光淬火的非晶态Ge2Sb2Te5薄膜在晶化触发阶段内的反射率随激光脉冲宽度增加而变化平缓。本文借用气－液体系中过饱和度分析液滴形成的原理，从统计物理学角度详细研究了两种非晶态Ge2Sb2Te5薄膜在脉冲激光作用下的晶化过程及机理，结果表明，当Ge2Sb2Te5的非晶态程度处于未饱和或饱和状态时不形成晶核；当Ge2Sb2Te5的非晶态程度处于过饱和状态时，此时的Ge2Sb2Te5为亚稳态，可能形成大小不等的晶核，但只有半径大于临界晶核尺寸时才可能长大成晶粒，而应力降低晶化能垒，增加非晶态Ge2Sb2Te5的过饱和度是导致沉积态与激光淬火态的Ge2Sb2Te5薄膜在晶化触发阶段内反射率随激光脉冲宽度变化规律不一致的根本原因，并据此解释了Ge2Sb2Te5薄膜在这两种状态下的反射率随激光脉冲宽度的变化特点及规律。