能量收集最大功率点跟踪DC-DC升压转换器设计

通过提升功率传输效率和降低电路功耗,设计了一种适用于低功率微弱能量收集的DC-DC升压转换器。升压转换器主要包括核心电路、最大功率点跟踪(MPPT)电路、零电流开关(ZCS)转换电路、振荡器、电荷泵和偏置电路。采用开路电压法检测输入功率,并适时调整开关导通时间,以调整输入阻抗,实现对能量源的MPPT传输;同时,采用特殊供电的ZCS,减小电路的亚阈值泄漏,提升转换效率。基于65 nm CMOS工艺对DC-DC升压转换器进行设计,芯片面积为260μm×380μm。仿真结果表明,在输入功率-7～-30 dBm内、能量源内阻50Ω～10 kΩ的条件下,跟踪效率峰值为99.81%。同时,在最低输入电压为35 mV、DC-DC转换器输出电压为1 V时,电路转换效率峰值为90.46%,整体功耗低于1.2μW。     

应用于弱能量收集的低功耗DC-DC升压转换器

设计了一种应用于能量收集领域的低功耗、超低电压DC-DC升压转换器。研究了转换器工作频率与功率和效率的关系,通过选择合适的脉冲宽度调制(PWM)频率来提高输出功率。通过适当提升转换器开关功率管的栅极电压,减小了晶体管的泄露电流,从而提高了输出电压。基于CMOS 65 nm工艺进行设计。仿真结果表明,提出的方案能提高弱能量转换效率。当输入电压为100 mV时,最大输出电压为1 000 mV。DC-DC升压转换器的输出功率为3.08 μW,转换器控制单元的功耗为697 nW,转换效率达到57.3%。     

单片集成直流-直流转换器的效率提高方法

采用SMIC 0.13μm CMOS工艺,设计实现了开关频率达到250 MHz,单片集成的降压型电源转换器。为了提高电源转换效率,该转换器中的片上电感采用非对称性设计方法,提高了电感的品质因数。采用了高密度片上滤波电容来稳定输出电压,同时对单位电容尺寸的优化设计减小了电容的等效串联电阻以及输出电压纹波。测试结果表明,芯片输入电压为3.3 V,当输出2.5 V电压时,峰值效率达到了80%,最大输出电流达到270 mA;当输出1.8 V电压时,峰值效率达到了70%,最大输出电流达到400 mA。     

一种新型交错并联同相降压升压DC/DC转换器

为了有效降低电流纹波和提高转换器效率,提出一种新型交错并联同相降压升压DC/DC转换器。提出的结构通过采用输入/输出（I/O）磁耦合交错并联和阻尼网络技术,降低了开关的电压应力、内部电压振荡和I/O电流纹波,并提升了转换器的效率。采用状态空间平均法,在连续导通模式下分析了提出转换器的稳态运行,从理论上证明了其优势。样机的功率设置为360W,输出电压为36 V,模拟结果以及实验结果显示,当输出电流为6A时,转换效率最高达到96%,最大输入电流纹波百分比仅为9.4%,相较于其他类似转换器,提出的转换器具有效率较高和I/O电流纹波较低的优势。     

电源

2A开关电流的升压转换器升压转换器LT1935的输入为2.3～16V,输出电压可达38V,采用1.2MHz的恒定开关频率,片内的高压开关额定在40V,NPN开关能实现在2A电流下仅为180mV的VCESAT并独立于电源电压。采用3.3V、1A输入时可产生5V电压,或在SEPIC设计中从4个碱性电池产生在550mA电流下的5V电压。具有软启动功能,停机电流小于1μA,采用小体积的SOT-23封装。Linear Technologyhttp://www.linear.com1/8砖模块适用于IBC1/8砖DC/DC转换器CBE1448G1的效率高达94%,适用于中间总线,输入为42～53V,单输出为9.7～13.3V。提供正负逻辑型号…     

奥地利微电子推出5V 130mA升压DC-DC转换器

奥地利微电子(austriamicrosystems)近日推出结合同步整流器的高效升压DC-DC转换器AS1321。AS1321在现有AS1320的性能基础上作了进一步的提升,它将输出电压提高到5V。新元件的供电电压为1.5V～5.0V,当输入电压为2V时,A S1321可提供130m A的输出电流。A S1321的效率为96%,因此是     

基于电荷泵的低压启动高效率Boost DC/DC变换器设计

设计了一种在供电电源电压稍高于MOS管阀值的超低压条件下就能正常工作的宽输入电压范围的DC/DC变换器。电荷泵的启动模块和Boost升压模块集成于同一芯片中,在电压低于2.2V（typical）时,芯片包括两部分的工作过程,首先由电荷泵的启动模块使电压升高至2.2V,然后由输出电压为Boost转换器模块供电,使芯片正常工作。输入电压高于2.2V时,只有Boost模块工作。为使芯片实现高效率的转换,在轻载情况下,采用PFM调制模式;在重载情况下,采用PWM调制模式;通过逻辑控制两种模式自动切换,实现了良好的负载调整率。芯片采用SMIC 0.5um CMOS工艺设计并流片测试,在0.83V的电源电压时,芯片能正常启动工作。在电压VIN=1.2V,VOUT=3.3V时,最大效率达到87%,所有电压和负载范围内效率不低于50%。该芯片可用于单电池供电的系统中。     

一种应用于OLED显示驱动芯片的CMOS升压型PFM DC-DC转换器设计

由于DC-DC芯片工作模式的多样性,电源转换器的系统结构有多种不同选择。为了电源模块的安全可靠,往往需要多种保护电路模块。文中从系统的角度,阐述了适合于OLED显示驱动电路的PFM工作模式的升压DC-DC电源转换器的原理。在此基础上,设计了一种应用于OLED驱动电路芯片的升压DC-DC电路。当输入电压为2.4～4.2V时,输出电压可以达到15V,负载电流最大可以达到50mA,纹波电压小于200mV。这个设计可以与OLED驱动芯片集成在一起,实现OLED驱动芯片和电源管理芯片的集成。     

用于相变存储器的高效开关电容电荷泵

提出一种应用于相变存储器芯片的新型开关电容电荷泵。对于16 位的相变存储器芯片,系统擦写时间大于100 ns,电荷泵的驱动能力至少为60 mA。相比于传统开关电容电荷泵,该电荷泵根据负载电流大小自动生成一个使能信号,该信号通过控制升压模块功率管的开启与关断来调节输出电压,最终将输出电压控制在一个允许的范围内波动。采用40 nm CMOS工艺对电荷泵进行设计和仿真,结果表明在5 mA负载时,电源效率为87%,输出纹波为2.84 mV;负载电流从0 mA变化到60 mA时,电源效率皆高于82%;负载电流变化在300 mA/μs时,输出瞬态响应时间为1.63 μs,满足相变存储器芯片的使用要求。     

一种具有750mA输出电流,双模式PWM/PFM控制的高效率直流-直流降压转换器

提出了一种输出电流可达750mA,脉宽调制（PWM）和变频调制（PFM）双模式控制的,高效率、高稳定性直流-直流降压转换器.该转换器在负载电流大于80mA时,采用开关频率为1MHz的PWM工作模式;在负载电流小于80mA时,采用开关频率减小和静态电流降低的PFM工作模式,实现了在整个负载电流变化范围（0.02~750mA）内,转换器均保持高效率.而且采用一种快速响应的电压模式控制结构,达到了优异的线性和负载调整特性.芯片采用CSMC公司0.5μm CMOS 2P3M混合信号工艺物理实现.测试结果表明,该电路可根据负载的变化在PWM和PFM模式下自动切换.最大转换效率达96.5%;当负载电流为0.02mA时,转换效率大于55%.该芯片特别适合电池供电的移动系统使用.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks     

Call for Papers—Feature Topic,Vol.12,No.7,2015

正Information Centric Networking Information-Centric Networking(ICN) is an emerging direction in Future Internet architecture research,gaining significant tractions among academia and industry.Aiming to replace the conventional host-to-host communication model by a data-centric model,ICN treats data content as the first