磁控溅射制备ZnO缓冲层薄膜的微观结构和光学性能

研究了衬底温度、溅射气压对磁控溅射沉积ZnO缓冲层薄膜的微观结构、表面形貌和光学性能的影响。结果表明,衬底温度、溅射气压对ZnO缓冲层薄膜表面形貌、晶粒尺寸、禁带宽度和光学透过率等有较大影响。综合分析得出最佳的制备ZnO缓冲层薄膜的工艺为250℃、0.6 Pa。在此工艺下制备的ZnO缓冲层薄膜具有很好的ZnO(002)面c轴择优取向,结构致密、尺寸均匀,禁带宽度为3.24 eV,可见光平均透过率为86.93%,符合作CIGS太阳能电池缓冲层的要求。     

联氨浓度对化学溶池沉积ZnS薄膜的影响

采用化学溶池沉积法在玻璃衬底上制备ZnS薄膜.为了解联氨在沉积过程中的作用,采用金相显微镜、XRD、nkd-薄膜分析系统对薄膜形貌、结构和光学性能进行分析.结果表明:随着联氨浓度的增加,衬底表面形核点数目增加,分布均匀,薄膜颗粒得到细化.结合Zn2+的络合前驱体、络合常数及其三元络合常数计算、氢键及空间位阻等方面的分析,认为会出现3种不同的络合前驱离子,分别为、、.这些Zn2+的前驱体影响着衬底形核点的数目、分布与薄膜的均匀性.在适当条件下,联氨不再起辅助沉积的作用,而是与氨一起形成三元络合配位体系,共同参与沉积.通过改变联氨浓度,可以制备出在550～ 1 000 nm的波长范围内透过率达95%以上、反射率与透过率相对应、均匀平整的非晶薄膜.     

CIGS基ZnS薄膜制备技术的研究

综述ZnS薄膜制备技术的特点.ZnS薄膜材料具有工艺容易控制、成本低等特点,极具市场发展潜力,尤其作为高阻层在CIGS太阳能电池的应用,有望替代传统使用的CdS膜.     

ZnS衬底表面制备HfO2增透保护膜的性能

用射频磁控溅射法在CVD ZnS衬底上制备了HfO2薄膜,利用X射线衍射(XRD),扫描电镜(SEM)、原子力显微镜(AFM)、傅里叶红外光谱(FTIR)和纳米力学探针对HfO2薄膜的结构和性能进行了分析和测试。结果表明,制备的HfO2为单斜相,膜层致密、表面平整、粗糙度仅为3.0 nm,硬度(7.3 GPa)显著高于衬底ZnS的硬度(2.6 GPa)。采用ZnO薄膜作过渡层,可有效提高HfO2与ZnS衬底的结合强度。单面镀制HfO2薄膜后,ZnS衬底在8-12μm长波红外波段的透过率最高可达81.5%,较之ZnS基体提高了5.8%,双面镀制HfO2薄膜后透过率最高可达90.5%,较之ZnS基体提高了14.8%,与理论计算结果吻合较好,适合作为ZnS窗口的增透保护膜。     

同质缓冲层厚度对磁控溅射法制备玻璃基AZO薄膜的结构与光电性能影响

室温下在玻璃基片上用射频磁控溅射法制备了不同厚度的ZnOAl(AZO)缓冲层,并在该同质缓冲层上溅射生长了AZO薄膜.用XRD测试了薄膜结构,用四探针法测量了薄膜方块电阻,用紫外-可见光谱仪测试了薄膜透过率,用双光束红外分光光度计测试了薄膜在中红外范围内的红外反射率.并比较并分析了引入同质缓冲层前后薄膜结构与性能的变化.结果表明,与没有缓冲层的样品相比较,适当厚度的同质缓冲层能降低AZO薄膜中的残余应力,使薄膜晶粒尺寸变大,降低AZO薄膜的方块电阻,使薄膜的紫外截止边发生蓝移,增加薄膜的红外反射率,并不明显影响薄膜的可见光透过率.     

水浴温度对化学浴沉积CdS薄膜性能的影响

采用化学浴沉积法(CBD)在硫酸镉、硫脲、氨水、氯化铵溶液体系中制备了CdS薄膜,研究了水浴温度对CdS薄膜的生长过程和物理性能的影响.试验表明,CdS薄膜的生长速率随着水浴温度提高而显著增加,薄膜从疏松变的致密,但是过高的水浴温度会导致表面晶粒变的粗糙;薄膜的结晶程度随着水浴温度提高而增强,择优取向明显;制得的CdS薄膜均有较高的光透过率,随着水浴温度的提高,薄膜厚度增加,透过率在波长560 nm处出现峰值;所得薄膜均是富Cd的,且随着水浴温度的提高Cd含量也增加;薄膜的暗电导率约为10-5～10-4 Ω-1cm-1,比光电导率小2～3个数量级,电导率与水浴温度没有明显对应关系.     

脉冲激光沉积及硒化法制备Cu(In,Ga)Se2薄膜研究

采用脉冲激光沉积和硒化后热处理的方法在石英衬底上制备Cu(In,Ga)Se2（简写为CIGS）薄膜,研究脉冲激光沉积（PLD）技术在制备CIGS薄膜太阳能电池材料上的应用,分析了不同预制层沉积顺序及厚度对CIGS薄膜组织结构、表面形貌、成分以及光学性能的影响。实验结果表明：(1)利用PLD技术及后硒化处理的工艺,制得的CIGS太阳能电池吸收层具有纯相和高结晶度等特性;(2)CuGa/In金属预制层的叠层顺序和叠层数、硒化退火温度对薄膜的结晶质量、晶粒尺寸、成分都具有重要的影响,其中叠层顺序影响最为明显;(3)样品均表现出对可见光区具有透射率低和吸收系数高的光学特性。本工作为制备性能优良的CIGS太阳能电池吸收层,提供了一个新颖的工艺手段。     

衬底与缓冲层的晶格失配对CeO_2缓冲层外延生长的影响

采用金属有机沉积(MOD)技术在La Al O3(LAO)、Y稳定的氧化锆(YSZ)和Ni-W衬底上沉积了Ce O2缓冲层薄膜,并研究了衬底与缓冲层的晶格失配对其外延生长的影响。结果表明,随着衬底和缓冲层薄膜之间晶格失配的增大,缓冲层薄膜内部的压应变增加,晶界浓度增加,晶粒生长速率减小。衬底和缓冲层薄膜之间的晶格失配越小,越有利于薄膜织构度的增大。Ce O2薄膜的表面形貌及粗糙度的演化对衬底和缓冲层薄膜之间的晶格失配并没有明确的依赖关系。     

循环沉积次数对Cu2ZnSnS4薄膜结构和性能的影响

采用磁控溅射法沉积Cu/Sn/ZnS和Cu/Sn/ZnS/Cu/Sn/ZnS/Cu/Sn/ZnS两种沉积次数不同的预置层薄膜材料,结合后硫化热处理制备铜锌锡硫(Cu_2ZnSnS_4,CZTS)薄膜,研究了不同循环沉积次数对CZTS薄膜结构和性能的影响。利用X射线衍射(XRD)、拉曼光谱仪(Raman)、扫描电镜(SEM)和紫外-可见分光光度计(UV-VIS)等研究了薄膜的结构、表面形貌以及薄膜各组分含量和禁带宽度。结果表明:沉积单个周期的Cu/Sn/ZnS预置层薄膜经550℃硫化后的薄膜为单相CZTS薄膜,化学组分接近理想化学计量比,表面颗粒致密且均匀,禁带宽度约为1.47 eV;沉积3个周期的Cu/Sn/ZnS/Cu/Sn/ZnS/Cu/Sn/ZnS预置层薄膜550℃硫化后的化学组分与理想化学计量比相差较远,表面颗粒不均匀。对于沉积时间较长的CZTS薄膜,单个周期沉积的薄膜相对3个周期沉积的薄膜更适合作为CZTS太阳能电池吸收层。     

不同制备工艺对ZnS光学性能的影响

分别用真空热压、H2S模式的化学气相沉积以及S模式的化学气相沉积3种工艺方法制备了红外透过性能良好的ZnS材料.比较了不同的工艺过程对ZnS显微结构的影响,并且分析了不同制备方法形成的缺陷对光学性能的影响.探讨了热等静压工艺改善光学性能的原因和机理.透过谱图的测试表明,S模式的化学气相沉积法制备的ZnS具有最高的可见光至远红外的透过率.对3种方法制备的ZnS分别进行了热等静压后处理,发现对材料的光学透过性能都有不同程度的提高.     

Structural, optical and chemical analysis of zinc sulfide thin film deposited by RF-mganetron sputtering and post deposition annealing

Zinc sulfide (ZnS) thin films were deposited by radio-frequency (RF) magnetron sputtering. The effects of the process parameters such as deposition time and RF-power, as well as of post deposition annealing under oxygen containing atmospheres, on the material properties of ZnS films have been investigated. X-ray diffraction analysis reveals out that the as-deposited ZnS films preferred (002) hexagonal wurtzite and (111) cubic zinc blend (111) at 28.60°, while a thicker ZnS film has additional hexagonal wurtzite (100), (110), and (200) planes coexisting with the preferred oriented-planes, suggesting that the thickness is dependent on the growth of ZnS. After annealing, ZnO phases were detected, indicating island-like grain growth on the surface of the ZnS film. By increasing the deposition time and the RF power, the optical band gap energy (E_g) of the ZnS film changes from 4.13 to 3.87 eV, indicating the presence of lower E_g with thicker ZnS film. The lower E_g (～3.27 eV) value of the annealed films is attributed to the ZnO transition. Unlike bulk ZnS material (Zn/S～1.08), deposited ZnS thin film has Zn-rich and S-deficient composition (Zn/S～1.28). However, the Zn/S ratio is closer to the ideal value when there is a longer deposition time or higher RF-power.     

高取向低粗糙度金刚石薄膜生长的研究

目的研究热丝化学气相沉积(HFCVD)工艺对金刚石薄膜生长的影响,确定影响金刚石薄膜生长的因素。方法采用热丝CVD法,以丙酮为碳源,在不同晶面的Si衬底上沉积金刚石薄膜,通过金相显微镜、X射线衍射仪分析薄膜生长特性。结果不同沉积温度下生长的金刚石薄膜表面形貌差异很大。在高、低碳源浓度下分别获得了(400)和(111)晶面取向的金刚石薄膜。采用分步沉积法,改善了成膜的效率。结论气源浓度和生长温度是影响金刚石薄膜生长的重要因素,分步沉积法对于金刚石薄膜的生长有较大影响。     

Effects of Deflection on the Sio2 Barrier Layer and Mo Back Electrode of Cu（In,Ga）Se2 Thin-Film Solar Cells on Stainless Steel Substrates

This paper studies the effects of deflection on the SiO2 barrier layer and molybdenum(Mo)back electrode of Cu(In,Ga)Se2 thin-film solar cells,prepared via magnetron sputtering on type SUS431 stainless steel substrates.The surface micro-cracks and sheet resistance of thin films had been observed and measured for in-situ bend tests.Experimental results show that increasing the thickness of the SiOx barrier has a better property to prevent cracks induced by bending stress.The sheet resistance of a Mo film increases alongside the bending of the curvature radius.The maximum allowed value of the curvature radius of the SiOx barrier layer,molybdenum electrodes,and the thin film CIGS absorbing layer should be 16 mm,20 mm,and 26 mm,respectively.Therefore,the maximum curvature radius limit should be 26 mm or less for CIGS thin-film solar cells prepared via sputtering on type SUS431 stainless steel substrates.     

Formation of CIGS thin absorption layer by sequential sputtering of CuGa/In/CuGa precursor on Mo/SLG with post selenization

Precursor structures of CuGa/In/CuGa stacking layers were prepared on Mo/soda-lime glass by sequential sputtering using intermetallic CuGa and metal In targets, with post selenization by Se evaporation at substrate temperature 500 °C. The selenized CIGS thin films were characterized by X-ray photo electron spectroscopy, X-ray diffraction, energy dispersive spectroscopy, Field emission scanning electron microscopy (FE-SEM), and Photoluminescence (PL). XPS survey spectra show that the constituent elements such as Cu, Ga, In, and Se appeared on the surface composition with corresponding photoelectron lines and a detailed study of the Se 3d signal in the CIGS absorption layer was discussed. The X-ray diffractograms of the CIGS films exhibited peaks revealing that the films are crystalline in nature with tetragonal chalcopyrite structure. FESEM images reveal that CIGS thin films yield granular nanostructure and a Mo back contact with a columnar structure. The CIGS thin films demonstrated intense near-band-edge PL and free-to-bound transitions were found and reported.     

Growth and characteristics of Zn-Se-S thin layers by dip method

Zn-Se-S composite thin films of mixed cubic and hexagonal phases of ZnSe and ZnS are synthesized by dip process at room temperature. Polycrystalline nature of the films was observed from XRD. Optical band gap of Zn-Se-S thin film was found to be in between individual band gaps of ZnSe and ZnS. The electrical conductivity was found to be in the range of 10⁻⁵-10⁻² (Ω cm)⁻¹. Due to above properties, these films find applications as a buffer layer in solar cells.     

Comparison of ZnS thin films fabricated by electrodeposition and spray pyrolysis methods

In this study, ZnS thin films were fabricated using an electrodeposition method from an aqueous electrolytic bath on a molybdenum (Mo) substrate and a spray pyrolysis method on a glass substrate. The potential range in which alloy electrodeposition of Zn and S could be carried out in a solution containing ZnSO₄, Na₂S₂O₃ and Na₃C₆H₅O₇ was determined by cyclic voltammetry. It was revealed that the thin film fabricated by the electrodeposition method was of ZnS and ZnO compounds and its microstructure was porous. The thin film prepared by the spray pyrolysis was smooth, with nano-grains. The band gap of the thin film fabricated by the spray pyrolysis was 3.72 eV, which was higher than that for the thin film fabricated by electrodeposition: 3.64 eV. Finally, the thin film fabricated by the spray pyrolysis was pure ZnS with a hexagonal structure, whereas that by electrodeposition was of ZnS (with a cubic structure) and ZnO compounds.     

Simulation atmosphärischer Korrosion durch dünne Elektrolytfilme

Simulation of atmospheric corrosion by thin films of electrolyte A method for investigation on atmospherical corrosion with the aid of thin electrolyte films is described, the special feature of this being the exact adjustability of the corrosion determining parameters. The investigations on the influence of pollutants showed that small additions of sodium chloride and sulphur dioxide into the water film cause two different types of corrosion of electrolytic copper: uniform growth of layer thickness and/or lateral surface growth of the corrosion products. In the initial phase the uniform growth of layer thickness on electrolytic copper depends on t² (t = time), later on proportional on t. The investigation of the corrosion in dependence on the thickness of electrolyte film showed new results regarding the transition of the bulk-electrolytical to thin film electrolyte corrosion (atmospheric corrosion). At electrolytic copper transition from uniform growth of layer thickness to lateral surface growth comes off, when reaching a film thickness of approx. 100 μm. The electrolyte was distilled water with an addition of 0,01%SO₂. The corrosion intensity of grey cast iron GG 25 under a film of pure water passes through a wide maximum of film thickness between 300 and 20 μm, with a weakly marked minimum on 100 μm, the corrosion intensity is decreasing at thinner films. It is herewith demonstrated that also under conditions excluding largely the convective oxygen transfer other corrosion types and -intensities show up when the films are only thin enough. The comparison of the effect of two vapour inhibitors, having been dissolved directly in the electrolyte films (dicyclohexyl-ammoniumnitrite and one usual in the trade of unknown composition) in different concentrations showed on grey cast iron GG 25 the superiority of the latter one.