共查询到20条相似文献,搜索用时 15 毫秒
1.
Thelander C. FrobergFroberg L.E. Rehnstedt C. Samuelson L. Wernersson L.-E. 《Electron Device Letters, IEEE》2008,29(3):206-208
We present results on fabrication and dc characterization of vertical InAs nanowire wrap-gate field-effect transistor arrays with a gate length of 50 nm. The wrap gate is defined by evaporation of 50-nm Cr onto a 10-nm-thick HfO2 gate dielectric, where the gate is also separated from the source contact with a 100-nm SiOx, spacer layer. For a drain voltage of 0.5 V, we observe a normalized transconductance of 0.5 S/mm, a subthreshold slope around 90 mV/dec, and a threshold voltage just above 0 V. The highest observed normalized on current is 0.2 A/mm, with an off current of 0.2 mA/mm. These devices show a considerable improvement compared to previously reported vertical InAs devices with SiNx, gate dielectrics. 相似文献
2.
对目前垂直纳米线晶体管的制备技术进行了综述.首先根据器件结构取向介绍了纳米线晶体管的分类,即水平纳米线晶体管和垂直纳米线晶体管,比较了这两类不同结构晶体管的优缺点,阐述了垂直纳米线晶体管的优势及其潜在应用价值.重点介绍了两种主流的垂直纳米线晶体管的制造方法,即自下而上方法和自上而下方法,自上而下方法则又分为后栅工艺和先栅工艺.随后详细比较了它们之间的不同.最后,对垂直纳米线晶体管制造过程中的工艺挑战进行了分析,提出了几种可行的解决方案,并预测了垂直纳米线晶体管未来的发展趋势,特别是在低功耗器件及3D存储器等方面的发展走向. 相似文献
3.
《Electron Device Letters, IEEE》2009,30(9):946-948
4.
Qiuhui Li Chen Yang Lin Xu Shiqi Liu Shibo Fang Linqiang Xu Jie Yang Jiachen Ma Ying Li Baochun Wu Ruge Quhe Kechao Tang Jing Lu 《Advanced functional materials》2023,33(23):2214653
Complementary metal-oxide-semiconductor (CMOS) field-effect transistors (FETs) are the key component of a chip. Bulk indium arsenide (InAs) owns nearly 30 times higher electron mobility µe than silicon but suffers from a much lower hole mobility µh (µe/µh = 80), thus unsuited to CMOS application with a single material. Through the accurate ab initio quantum-transport simulations, the performance gap between the NMOS and PMOS is significantly narrowed is predicted and even vanished in the sub-2-nm-diameter gate-all-around (GAA) InAs nanowires (NW) FETs because the inversion of the light and heavy hole bands occurs when the diameter is shorter than 3 nm. It is further proposed several feasible strategies for further improving the performance symmetry in the GAA InAs NWFETs. Short-channel effects are effectively depressed in the symmetric n- and p-type GAA InAs NWFETs till the gate length is scaled down to 2 nm according to the standards of the International Technology Roadmap for Semiconductors. Therefore, the ultrasmall GAA InAs NWFETs possess tremendous prospects in CMOS integrated circuits. 相似文献
5.
ZnO Nanowire Field-Effect Transistors 总被引:1,自引:0,他引:1
《Electron Devices, IEEE Transactions on》2008,55(11):2977-2987
6.
《Electron Devices, IEEE Transactions on》2008,55(11):2846-2858
7.
Taewook Kim Donghee Kang Yangjin Lee Sungjae Hong Hyung Gon Shin Heesun Bae Yeonjin Yi Kwanpyo Kim Seongil Im 《Advanced functional materials》2020,30(40)
2D transition metal dichalcogenides (TMDs) have been extensively studied due to their excellent physical properties. Mixed dimensional devices including 2D materials have also been studied, motivated by the possibility of any synergy effect from unique structures. However, only few such studies have been conducted. Here, semiconducting 1D ZnO nanowires are used as thin gate material to support 2D TMD field effect transistors (FETs) and 2D stack‐based interface trap nonvolatile memory. For the trap memory, deep level electron traps formed at the first MoS2/second MoS2 stack interface are exploited, since the first MoS2 is treated in an atomic layer deposition chamber for a short while. On the one hand, a complementary inverter type memory device can also be achieved using a long single ZnO wire as a common gate to simultaneously support both n‐ and p‐channel TMD FETs. In addition, it is found that the semiconducting ZnO nanowire itself operates as an n‐type channel when the TMD materials can become a top‐gate to charge the ZnO channel. It means that 2D (bottom gated) and 1D channel (top gated) FETs are respectively operational in a single device structure. The 1D–2D mixed devices seem deserving broad attention in both aspects of novelty and functionality. 相似文献
8.
《Electron Device Letters, IEEE》2008,29(9):981-983
9.
Runsheng Wang Ru Huang Yandong He Zhenhua Wang Gaosheng Jia Dong-Won Kim Donggun Park Yangyuan Wang 《Electron Device Letters, IEEE》2008,29(3):242-245
In this letter, negative bias temperature instability (NBTI) in silicon nanowire field-effect transistors (SNWFETs) is investigated and found to exhibit some new characteristics that are probably due to the structural nature of nanowires. In long-channel SNWFETs, a fast degradation and a quick saturation of NBTI are observed and discussed. In short-channel SNWFETs, a large fluctuation of NBTI is observed, which mainly originates from the ultrasmall gate areas of the short-channel SNWFETs and the statistical nature of randomly trapped charges in the oxide and at the Si/SiO2 interface. Techniques to suppress the fluctuation and characterize the intrinsic NBTI in ultrasmall SNWFETs are proposed and discussed. A recently developed online gate current method is demonstrated, which effectively alleviates this NBTI fluctuation in SNWFETs. 相似文献
10.
《Electron Devices, IEEE Transactions on》2008,55(11):2960-2967
11.
Dong-Joo Kim Jung-Hwan Hyung Deok-Won Seo Duk-Il Suh Sang-Kwon Lee 《Journal of Electronic Materials》2010,39(5):563-567
We report on conventional multichannel ZnO nanowire field-effect transistors (FETs) operating in one device in a dual-gate
mode. Our FETs were prepared by assembling ZnO nanowires on a Si substrate using an optimized dielectrophoresis technique
with bottom-gate and top-gate FET structures. We observed that the enhancement of the electrical characteristics in FETs with
top-gate mode operation results from a thinner gate oxide and top-gate geometry compared with FETs with bottom-gate mode operation.
It was also verified that surface passivation strongly affected the electrical performance of ZnO nanowire FETs. 相似文献
12.
13.
《Electron Devices, IEEE Transactions on》2008,55(11):2918-2930
14.
Microwave Performance of AlGaN/GaN High-Electron-Mobility Transistors on Si/SiO2/Poly-SiC Substrates
T.J. Anderson F. Ren J. Kim J. Lin M. Hlad B.P. Gila L. Voss S.J. Pearton P. Bove H. Lahreche J. Thuret 《Journal of Electronic Materials》2008,37(4):384-387
The radiofrequency (RF) performance of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown by molecular beam epitaxy
(MBE) on Si-on-poly-SiC (SopSiC) substrates formed by the Smart-CutTM process is reported. This provides a low-cost, high-thermal-conductivity substrate for power applications. HEMTs with a 0.5 μm gate length show cutoff frequencies (f
T) of 18 to 27 GHz for gate-to-drain distances of 3 to 32 μm and a maximum frequency of oscillation (f
max) of 43 to 47 GHz. The f
max values are slightly lower than comparable devices on sapphire, SiC or Si alone. This approach looks promising for applications
requiring cheap large-area substrates and better thermal management than provided by pure Si substrates alone. 相似文献
15.
Si纳米线场效应晶体管研究进展 总被引:1,自引:0,他引:1
从Si纳米线场效应晶体管(SiNWFET)的结构原理、Si纳米线的制作工艺以及器件电学性能的改善措施三个方面介绍了SiNWFET的研究进展。通过分析SiNWFET的漏极电压对沟道电势的影响,表明SiNWFET自身的细沟道和围栅结构对于改善亚阈值特性和抑制短沟道效应起着关键作用。针对Si纳米线的制备,介绍了光刻、刻蚀与热氧化等自上而下的方法和气-液-固生长这种自下而上的方法。分析了SiNWFET的电学性能,探讨了为改善电学性能而进行的器件结构和工艺的改进,包括选择沟道取向,采用多条纳米线、应变纳米线或新材料作为沟道以及减小源-漏接触电阻等措施。最后对SiNWFET所面临的挑战和前景作了展望。 相似文献
16.
《Electron Device Letters, IEEE》2009,30(7):730-732
17.
Modeling and Fabrication of ZnO Nanowire Transistors 总被引:1,自引:0,他引:1
《Electron Devices, IEEE Transactions on》2008,55(11):3012-3019
18.
《Electron Device Letters, IEEE》2009,30(6):644-646
19.
Abramkin D. S. Petrushkov M. O. Putyato M. A. Semyagin B. R. Shamirzaev T. S. 《Semiconductors》2018,52(11):1484-1490
Semiconductors - Heterostructures with InAs/AlAs quantum dots are grown on GaAs/Si hybrid substrates. The experimentally observed low-temperature (5–80 K) photoluminescence spectra of... 相似文献