(FeCo/CoNbZr)n多层软磁薄膜的结构与磁性能

利用磁控溅射制备纳米晶单轴各向异性(FeCo/CoNbZr)n多层软磁薄膜,通过CoNbZr层的加入来细化FeCo颗粒。这种组合而成的多层膜矫顽力低,单轴各向异性明显,各向异性等效场Hk高,热稳定性优良,非常适合应用于超高密度磁记录头。     

Stabilization of Ferromagnetism in Co Codoped ZnO:N

First principle calculations were performed to study room temperature ferromagnetism in N doped ZnO (ZnO:N) using spin density functional theory. Substitution of O by N in ZnO results in spin polarized state exhibiting half metallic ferromagnetic characteristics. Each N dopant introduces magnetic moment of 1.0 μ_B/supercell, which is from 2p electrons of N but the magnetization energy (ΔE = 14.42 meV) is too small to stabilize ferromagnetism at room temperature. Cobalt (Co) co-doping in ZnO:N is found to enhance ferromagnetism (magnetic moment = 4.24 μ_B/supercell) with enhanced stability (ΔE = 635 meV) and is driven by hybridization between N 2p and Co 3d states.     

新型纳米晶软磁合金及其应用(一)

最近十年来纳米磁性材料已经获得了广泛的应用.本文详细论述了由两个铁磁相组成的新型纳米晶软磁合金在理论研究和实际应用方面所取得的重要成果.重点介绍了随机各向异性模型在解释这类纳米晶软磁合金的微结构特征和磁性能方面的成功应用,以及各种纳米晶软磁合金,包括Fe-Si-B-Cu-Nb纳米晶合金、Fe (Co)-Zr-B-(Cu)纳米晶合金、Fe-M-N, C (M = Zr, Hf, Ta, Nb)薄膜、软磁颗粒膜、双相非晶态薄膜和磁性多层膜作为高频软磁材料应用的最新进展情况.     

气雾化法(Fe_(1-x)Co_x)_(93.5)Si_(6.5)软磁合金粉末的显微组织与磁性能

采用气雾化法制备了(Fe_(1-x)Co_x)_(93.5)Si_(6.5)(x=0,0.01,0.03,0.05,0.07,0.1,wt%)系列合金粉末,利用扫描电镜、X射线衍射仪和振动样品磁强计等分析检测手段研究了合金粉末显微组织和磁性能。结果表明,气雾化合金粉末球形度好,表面光洁,组织均匀,合金为单一的α-Fe(Si)相;掺杂Co元素不改变Fe_(93.5)Si_(6.5)合金粉末显微结构,但提高了合金比饱和磁极化强度。当x=0.1时,合金粉末比饱和磁极化强度σ_s达到最大值219.26 A·m~2/kg,其原因为Fe-Co原子间的交换耦合作用使得单原子波尔磁矩达到最大。粉末矫顽力随Co含量的增加单调递增,这主要归因于Co原子磁晶各向异性常数K_1远大于Fe,导致其矫顽力增大。总体而言,(Fe_(0.9)Co_(0.1))_(93.5)Si_(6.5)合金粉末磁性能较优异。     

交换弹性永磁薄膜的研究现状

简要地介绍了近几年来交通弹性永磁薄膜,如Sm-Co/(Fe,Co),Nd2Fe14B/Fe、SmFe12/Fe,Co-Pt/Co和Fe-Pt/Fe3Pt等的制备方法和永磁性能的研究结果。     

An electron's spin--Part II

In Part I of this article, we introduced the notion of encoding binary bit information in the spin polarization of a single electron confined in a quantum dot and placed in a magnetic field. The spin polarization becomes bistable in a magnetic field and the spin can point either parallel to the field or antiparallel to it. These two polarizations encode the classical binary bits 0 and 1. We showed that since the bits can be switched by simply flipping the electron's spin without physically moving the electron in space and causing a current, the energy dissipated during the bit flip operation could be made very small. In Part II we discuss the notion of using a single electron's spin as a quantum bit (or qubit) that represents information in quantum computers. Just as spin is superior to charge as a vehicle to host classical bit information in classical computers it turns out that spin is superior to charge to host quantum information as well. That is why spin-based quantum information processing is gradually becoming the staple of scalable solid state versions of quantum computers.     

TEM observations of magnetic domains and grain boundaries on spin‐sprayed ferrite films exhibiting high permeability usable for gigahertz noise suppressors

Lorentz TEM observations of magnetic domain wall motion, as well as TEM observations of grain boundaries, were performed on spin‐sprayed ferrite films #1 (Ni_0.17Zn_0.22Fe_2.61O₄) and #2 (Ni_0.19Zn_0.20Co_0.03Fe_2.58O₄), both 0.5 µm in thickness. They exhibit much higher natural resonance frequencies than the bulk ferrite and thus have been applied to gigahertz noise suppressors. Films #1 and #2 exhibit prominent and weak in‐plane uniaxial magnetic anisotropy, respectively, which is induced along the liquid flow direction during spin‐spraying. Both films have columnar crystallites with 100‐200 nm widths aligned perpendicular to the film plane, and the boundaries of the crystallites have no pores or impurity phases. Therefore, the crystallites are magnetically exchange‐coupled, which is responsible for the unusually high permeability and high natural resonance frequencies of the films. Under zero bias magnetic field, film #1 exhibits mosaic‐shaped magnetic domains, whereas film #2 exhibits magnetic domains elongated along the easy magnetization axis, both several hundred nanometers in width. For both films the domain structure remains unchanged when an in‐plane bias DC magnetic field,H_dc, of up to 10 Oe is applied along the hard axis. Under a stronger H_dc, the domain structure prominently changes, and the domain walls disappear when H_dc exceeds ∼100 Oe. This confirms our previous finding that the initial permeability is ascribed only to magnetization rotation, with no contribution from domain wall motion [J. Magn. Magn. Mater., 278 , 256 (2004)]. © 2007 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.     

Diluted magnetic semiconductor properties of Zn1 − x Cox O: 1 at% Al thin films prepared by pulsed DC magnetron sputtering

Zn_{1 − x} Co_xO: 1 at% Al(x = 0−0.3) films were grown on corning 7059 glass by asymmetrical bipolar pulsed dc magnetron sputtering. The c-axis orientation along the (002) plane was enhanced with increasing Co concentration. The ZnCoO thin films are grown to the fibrous grains of tight dome shape. The transmittance spectra showed that sp-d exchange interactions and typical d-d transitions become activated with increasing Co concentration. The electrical resistivity of ZnCoO films increased ranging from ∼10^{− 3} to ∼10⁻² Ω ⋅ cm with increasing Co concentration, especially it increased greatly at 30 at% Co. X-ray photoelectron spectroscopy and alternating gradient magnetometer analyses indicated that no Co metal cluster in the ZnCoO films is formed and room temperature ferromagnetism is exhibited. These electrical and magnetic properties of ZnCoO films suggest a potential application of dilute magnetic semiconductor devices.     

NiFe/Cu多层膜的结构与层间耦合效应

用直流磁控溅射方法在玻璃基片上制备了[Ni_(80)Fe_(20)/Cu]_(20)多层膜,其中采用了靶表磁场强度不同的靶腔沉积铜层,利用X射线衍射和振动样品磁强计对Cu(100nm)/[Ni_(80)Fe_(20)(0.9nm)/Cu(tCu)]_(20)两个系列样品的结构和磁性进行了表征。靶表磁场较弱时沉积的多层膜具有良好的层间耦合振荡行为,而靶表磁场较强时制备的多层膜没有出现反铁磁耦合。依据上述事实,我们推测靶表磁场强度的不同会影响Ni Fe/Cu界面扩散,进而对多层膜样品的磁性产生影响。用靶表磁场较弱的靶腔沉积中间层铜能够有效减小界面互溶程度,改善镍铁与铜的成层质量。而靶表磁场较强的靶腔溅射出的铜原子具有较高能量,在界面处扩散并与镍铁层互溶,破坏了层状结构。     

Low‐resistive and transparent AZO films prepared by PLD in magnetic field

Al₂O₃‐doped ZnO (AZO) thin films have been deposited onto glass substrates using a split target consisting of AZO (1 wt%) and AZO (2 wt%) by pulsed laser deposition with an ArF excimer laser (λ = 193 nm, 15 mJ, 10 Hz, 0.75 J/cm²). By applying a magnetic field perpendicular to the plume, the lowest resistivity of 8.54 × 10^?5Ω·cm and an average transmittance exceeding 91% over the visible range were obtained at a target‐to‐substrate distance of 25 mm for approximately 279‐nm‐thick AZO film (1.8 wt%) grown at a substrate temperature of 230 °C in vacuum. From cross‐sectional TEM observations and the XRD spectrum, a reason why the low resistivity (54 × 10^?5Ω·cm) was reproducibly obtained was considered to be due to the fact that a disorder of crystal growth originating in the vicinity of the interface between the substrate and the film was suppressed by application of the magnetic field and the c‐axis orientation took preference, giving rise to the increase of mobility. © 2005 Wiley Periodicals, Inc. Electr Eng Jpn, 151(2): 40–45, 2005; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.20026     

阳极加载稳恒磁场对PEMFC性能的影响

在工作面积为26.5 mm×26.5 mm的质子交换膜燃料电池(PEMFC)的阳极侧加载不同方向(与阳极侧平行、垂直)、不同强度(0、210、310、390 m T)的稳恒磁场,测出稳恒磁场源的磁场空间分布,得到在PEMFC阳极侧加载磁场对电池性能的影响。实验结果发现:一定强度范围内的磁场能够提高PEMFC的工作性能,但在不同磁场方向与不同磁场强度下,得到的PEMFC工作性能提高幅度有差异。当在PEMFC阳极侧加载垂直磁场时,其最大输出功率提高更大,平行磁场其次。当在阳极侧加载390 mT的磁场时,其PEMFC最大输出功率密度可以达到73.38 mW/cm~2。实验同时发现一定强度的加载磁场还可以提升PEMFC输出功率的稳定性。     

CoO膜厚对磁控溅射Co/CoO薄膜结构和磁性能的影响

为了探究FM/AFM双层膜中的交换偏置现象,利用磁控溅射法制备Co/Co O薄膜,通过改变沉积时间获得了不同Co O层厚度的Co/Co O双层膜系。通过X射线衍射(XRD)、扫描电子显微镜(SEM)、交变梯度磁强计(AGM)、超导量子干涉仪(SQUID)分别对样品的物相结构、表面形貌及磁性能进行分析和表征。结果表明,AFM层厚度对表面形貌有一定的影响,但表面成分不随AFM层厚度的变化而变化。所有样品的XRD谱均出现Co O(002)衍射峰,说明薄膜为晶态。不同厚度的Co/Co O双层膜样品表现出不同的矫顽力和偏置场,低温下样品的磁滞回线表现出明显的交换偏置效应,并且磁偏移量随膜层厚度增加呈现逐渐增大的趋势。当Co O厚度为62.5nm时,偏置场最大可达到420k A/m。     

Effects of magnetic field on the carrier density distribution of semiconductor power device operated in pulsed power conditions

Turn‐on characteristics of semiconductor power devices are evaluated under external magnetic field to study the effects of external magnetic field generated in a pulsed power circuit. Two pin diodes that have a basic structure of power devices are connected in parallel and driven by a pulsed voltage source. It was found the magnetic field applied to one diode in the perpendicular direction of current‐flow changed the current balance between the diodes. Besides the on‐resistance of a diode was increased under external magnetic field. The carrier‐density distribution inside of the diodes was measured by using a free carrier absorption method. The data show that the carrier‐density distribution changes from nearly the uniform one to the one‐sided one. It can be concluded that the effects of magnetic‐field have to be considered for the evaluation of switching characteristic in pulsed power operations. © 2004 Wiley Periodicals, Inc. Electr Eng Jpn, 147(1): 10–16, 2004; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.10271     

Spin-dependent transport in a multifunctional spintronic device with graphene nanoribbon electrodes

We investigated the spin-dependent transport properties of a molecular device consisting of a phenanthrene molecule anchored via two carbon atoms to zigzag graphene nanoribbon electrodes, using density functional theory combined with the nonequilibrium Green’s function method. The results of the calculations show that the device exhibits perfect spin filtering and negative differential resistance effect in both parallel and antiparallel configuration, and perfect dual spin filtering and large spin rectification in antiparallel configuration. In addition, we changed the direction of the phenanthrene plane to be perpendicular to the two electrode planes, enabling molecular switching. The proposed structure combines interesting properties that enable its use in multifunctional nanoelectronic devices.     

Parallel operation of four‐switch full‐bridge power amplifiers and a unique digital control scheme for advanced magnetic resonance imaging

In recent years, magnetic resonance imaging (MRI) systems have been in demand to diagnose moving parts in the human body such as the heart or the blood in angiography, where images should be taken in milliseconds instead of minutes. Gradient power amplifiers, which are small but vital components for advanced MRI, require higher output power capacity as well as faster rise/fall dynamic response characteristics under a variety of specified current reference signals. This paper presents a novel switch‐mode gradient power amplifier using IGBTs which are connected in parallel to a conventional four‐switch full‐bridge power conversion circuit at their inputs/outputs in order to realize a higher power density. To satisfy the design specifications, which require minimized ripple and improved rise/fall dynamic response characteristics of the current in the gradient coil, a unique digital control scheme based on an optimal type 1 servo system is proposed and described in detail. The effectiveness of the above is discussed and evaluated through computer‐aided analysis. It is expected that the proposed techniques will greatly expand the diagnostic targets and improve the image quality of MRI. © 2000 Scripta Technica, Electr Eng Jpn, 132(1): 64–72, 2000     

Sm-Co/α-Fe双层膜和多层膜磁反转的微磁学模拟

采用微磁学模拟软件OOMMF,详细研究了软/硬磁层总厚度不变,结构的变化对Sm-Co/α-Fe薄膜磁性能和磁反转过程的影响。结果显示,从双层膜变化到多层膜的过程中,不同的结构具有不同的磁性能和磁反转过程;当结构优化为Sm-Co(7.5 nm)/α-Fe(2.5 nm)/Sm-Co(5 nm)/α-Fe(2.5 nm)/Sm-Co(7.5 nm)多层膜时,最大磁能积和矫顽力相比Sm-Co(20 nm)/α-Fe(5 nm)双层膜大幅度提高,分别为1015.44 k J/m3和μ0Hc=1.891T。此结论对高性能交换耦合类磁性薄膜的研究具有一定的指导意义。     

Fundamental performance of superconducting fault current limiter with two air core coils

In this paper, we theoretically compared the fundamental characteristics of fault current limiter (FCL) with high‐Tc superconductor (HTS) and two coaxial air‐core coils based on steady‐state analysis. Two types of FCL are possible. One is parallel type and the other is transformer type. The parallel type can be divided into two types according to the combination of the winding direction of coils. That is, there are two cases that the coils are wound so that the magnetic fluxes induced by coils reduce and increase each other. In this paper, we called them parallel type 1 and 2, respectively. There is no significant difference in the HTS volume required to satisfy both the specified limiting impedance Z_FCL and initial current I_ini in limiting operation among those three FCLs although the HTS in each type of FCL has different length and cross‐sectional area. In the cases of those FCLs, we can improve the current limiting performance by arranging the HTS in the coils and applying the magnetic flux to the HTS in the limiting operation. The magnitudes of the magnetic flux density are almost the same. From the viewpoint of the FCL impedance in normal operation, parallel type 1 has the most desirable structure. On the other hand, transformer type is the best to eliminate the magnetic flux applied to the HTS in the normal operation. © 2008 Wiley Periodicals, Inc. Electr Eng Jpn, 165(3): 29–36, 2008; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.20477     

掺杂钙钛矿钴氧化物La0.75Sr0.25Co1-xFexO3(x=0,0.1)的电磁特性

采用溶胶-凝胶方法制备了La0.75Sr0.25Co1-xFexO3(x=0,0.1)多晶样品,通过室温X射线衍射、标准四探针法以及直流磁化强度测量对材料结构及电磁特性进行研究。结果表明,铁的掺入晶格结构基本没有发生变化,但掺铁后体系的电阻率增大,出现半导体-金属的转变,材料磁性明显下降,转变温度向低温方向移动,系统在低温下由自旋团簇玻璃态转变为自旋玻璃态。     

Bi/Pt底层对Co/Ni多层膜反常霍尔效应的影响

采用直流磁控溅射法在玻璃基片上制备了一系列分别以Pt和Bi/Pt为底层的Co/Ni多层膜样品。通过研究Bi的厚度、周期层数、周期层中的Co和Ni的厚度以及退火温度对样品反常霍尔效应的影响,最终获得了霍尔效应最强、良好的霍尔曲线矩形度,同时具有良好的垂直各向异性的最佳样品Bi(1nm)/Pt(5nm)/[Co(0.3nm)Ni(0.5nm)]1/Co(0.3nm)/Pt(1nm)。实验表明,退火处理有利于增强反常霍尔效应。     

Coaxial magnetic pulse compression system to generate fast‐rising pulsed power

A fast‐rising pulsed power generator (PPG) using a coaxial magnetic pulse compression (MPC) system has been developed. Two kinds of magnetic cores, a Co‐based amorphous metal and a nanocrystalline Fe‐based soft magnetic metal, have been used in the coaxial MPC system to evaluate losses of magnetic cores and leakage current of a saturable inductor. The PPG produced a pulsed‐high‐current of 3.7 kA with a risetime of 7 ns (20–80%) at a repetition frequency of 1000 pulses per second. © 2012 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.