Enhanced Superconductivity in Double-Doping Cu<Subscript>0.15</Subscript>TaSe<Subscript>2−<Emphasis Type="Italic">x</Emphasis></Subscript><Emphasis Type="Italic">S</Emphasis><Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>

Superconducting Cu _x TaSe₂(x=0.05, 0.15) and Cu_0.15TaSe_2?x S _x (x=0, 0.5, 1, 1.5) single crystals have been systematically fabricated by a chemical vapor transport method. It is found that the double doping in TaSe₂, i.e., the simultaneous intercalation of Cu and substitution of Se by S, can substantially enhance the superconducting transition temperature. Transport property measurements give evidence of the coexistence and competition of charge density wave state and superconductivity in Cu _x TaSe₂ which provide meaningful information to understand the complex electronic states in this system. The parallel shift and the fan-shape broadening behaviors are observed in the superconducting transition curves under magnetic fields of Cu_0.15TaSeS and TaSeS, respectively, indicating an increase of coherence length and suppression of superconducting fluctuation induced by copper intercalation.     

Structural and Superconductivity Properties of BaFe<Subscript>2−<Emphasis Type="Italic">x</Emphasis></Subscript>Pt<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>As<Subscript>2</Subscript>

Extraordinary magnetic behaviors, resistivity properties, and lattice parameters of the main sample BaFe₂As₂ and BaFe_2?x Pt _x As₂ in the variation of x from 0 to 0.4 with the step of 0.1 were investigated. The bulk materials have been prepared by the solid-state reaction method and sealed into a quartz tube. The crystal structure of all samples exhibited the ThCr₂Si₂-type crystal structure which is in harmony with earlier studies in the literature. The superconducting states with magnetization measurements have been detailed in the wide temperature range 5–170 K, up to a field of 20 Oe. Increasing Pt and decreasing Fe elements in the BaFe_2?x Pt _x As₂ compound deteriorated superconductivity. Using magnetization measurement data, we present the variation of superconducting critical temperature (T _c) correlating with a Pt dopant rate from x = 0 to x = 0.4. The dopant rate of x = 0.3 exhibited the limit rate for maximum T _c; deterioration of superconductivity was revealed with a dopant rate of more than x = 0.3. This should be explained by varying T _c related to a lattice shrinking and pressure effect (geometric factor).     

Synthesis,Structure, and Superconductivity of (La1.5Pb0.5−<Emphasis Type="Italic">x</Emphasis>Sr<Emphasis Type="Italic">x</Emphasis>)CuO<Emphasis Type="Italic">z</Emphasis>

The substitution of strontium for lead in the material (La_1.5Pb_0.5?xSr _x )CuO _z , x = 0–0.15 has been carried out. A stable and reproducible single phased superconducting materials can be obtained inside an evacuated quartz tube. The X-ray diffraction pattern shows that the superconducting phase can be indexed on the basis of an orthorhombic symmetry (F_mmm) for x = 0 and on the basis of tetragonal symmetry (I_4/mmm) for x > 0. The transition temperature T _c increases as the strontium substitution parameter x increases. We observed the maximal T _c around x = 0.15 with 38 K with fairly large Meissner volume fraction of 38% (FC).     

Magnetic Properties and Superconductivity in GdFeAsO<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>F<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>

Abstract A series of GdFeAsO_1−x F _x (x=0,0.1, 0.2, and 0.25) samples have been synthesized with conventional solid-state method. The phase purity is significantly improved by using Fe₂O₃ as the source of oxygen, compared to those prepared using Gd₂O₃ as the precursor. The lattice parameters are found to shrink with increasing fluorine doping level. The F-doped samples show a superconducting transition with T _c increasing with doping level, reaching T _c=40.1 K at x=0.25. A pronounced Curie–Weiss-like paramagnetic background, which is usually attributed to the impurity phases, is found to be independent of the fluorine doping level and proven to come from the Gd³⁺ in the GdFeAsO_1−x F _x compound with the effective magnetic moment of Gd³⁺ being μ _eff=7.83±0.05 μ_B. The extrapolated slope of dH_c2/dT|_T=Tc{dH}_{\mathrm{c2}}/dT|_{T=T_{\mathrm{c}}} in this system is about −4.5 T/K.     

Synthesis and Characterization of Ni<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Cu<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Bi<Subscript>3</Subscript> Superconductor

In this paper, we characterized the microstructure and superconducting properties of Cu-doped NiBi₃ samples. The polycrystalline Ni_1?x Cu _x Bi₃ (0 ≤ x ≤ 0.10) samples were prepared using a solid-state reaction method. The crystal structure and unit cell parameters were determined by Rietveld refinement of powder X-ray diffraction. The data showed that the main phase present corresponded to NiBi₃ without dependence on the Cu concentration, but with small quantities of Ni and Bi. The SEM and AFM measurements revealed that the main phase was inhomogeneous at microscopic level, with Bi richer regions in comparison to other regions. However, Raman spectroscopy results did not show significant changes in the spectra with Cu doping and in different regions of the samples. Another finding was that regardless of Cu doping, the superconducting transition temperature was 4.05–4.06 K.     

Thermal expansion and isothermal compressibility of TlGaSe<Subscript>2(1 −<Emphasis Type="Italic">x</Emphasis>)</Subscript>S<Subscript>2<Emphasis Type="Italic">x</Emphasis></Subscript> (<Emphasis Type="Italic">x</Emphasis> = 0.1, 0.2)

The temperature dependences of the thermal expansion coefficient and isothermal compressibility for TlGaSe_{2(1 ? x)}S_2x (x = 0.1, 0.2) solid solutions show an anomaly attributable to a second-order phase transition. The thermal expansion data have been used to evaluate the Debye characteristic temperature Θ, rms atomic displacement, and specific heat difference of the solid solutions.     

Structure and photoelectric properties of Si<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Sn<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> epilayers

Epitaxial layers of n-type Si_{1 − x} Snx (0 ≤ x ≤ 0.04) solid solution were grown by liquid phase epitaxy from tin-based solution melt confined between two horizontal Si(111) single crystal silicon substrates. The structure of epilayers was determined and the photosensitivity spectra of pSi-nSi_{1 − x} Snx (0 ≤ x ≤ 0.04) structures were studied at various temperatures. It is established that Si_0.96Sn_0.04 films have a perfect single crystal structure with (111) orientation and a subgrain size of 60 nm. The photosensitivity edge of the pSi-nSi_0.96Sn_0.04 structure is shifted to longer wavelengths as compared to that of the pSi-nSi structure. The photosensitivity of the pSi-nSi_0.96Sn_0.04 structure in the impurity absorption range depends on the temperature.     

Structural Parameters and Spin Filtering Properties of Ga<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>(<Emphasis Type="Bold">M</Emphasis>)<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>P compound

In this work, we have explored the structural and magnetic properties of GaP-based diluted magnetic semiconductors (DMSs). Based on first-principle density functional theory (DFT) calculations and using a full potential linearized augmented plane wave (FP-LAPW) method in generalized gradient approximation (GGA), some significant structural and magnetic properties of Ga _1?x (M) _x P compound as DMS are investigated. In this compound, M is a transition element such as vanadium (V), manganese (Mn), cobalt (Co), and copper (Cu) with a concentration of X. We have calculated the structural parameters such as the equilibrium lattice constant and bulk modulus of the compound. Furthermore, the spin polarization and magnetic moments are studied. We have found that by increasing the atomic number of the transition element, the lattice constant reduces, except for that of Cu, and compressibility improved in comparison with GaP. Moreover, with X=25 %, the Ga_0.75(M)_0.25P compound becomes more stable by increasing the atomic number of the transition element M. The study of the electronic properties of the compound indicates that the main contribution in total density of states near Fermi level is related to the 3d orbitals of the transition elements and the highest magnetic moment is for Mn-doped GaP.     

Growth and thermal expansion of (CuInSe<Subscript>2</Subscript>)<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript> · (2MnSe)<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> crystals

Crystals of CuInSe₂-based solid solutions in the CuInSe₂-2MnSe system have been grown by a two-zone process. The solid-solution series has been shown to exist up to 30 mol % 2MnSe. The thermal expansion of the (CuInSe₂)_{1 ? x} · (2MnSe) _x crystals has been studied by dilatometry, and the results have been used to evaluate their thermal expansion coefficients. The temperature dependences of the relative length change and thermal expansion coefficient have anomalies due to a chalcopyrite ai sphalerite phase transformation.     

Observation of RKKY-Kondo Competition and Non-Fermi-Liquid Behavior in the Intermetallic Compound Series Ce(Cu<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Ni<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>)Si<Subscript>2</Subscript>

We study Kondo-RKKY competition in the intermetallic compound series Ce(Cu_1−x Ni _x )Si₂ (x=0, 0.2, 0.4, 0.6, 0.8, 1.0) by performing X-ray diffraction, electrical resistivity, magnetic susceptibility measurements and Ce-L_III-edge X-ray absorption spectra. The results reveal that RKKY interaction dominates and leads to spin-glass behavior at the Cu rich end. For the Ni rich end the Kondo effect prevails and drives the system towards an intermediate-valence regime with nearly quenched magnetism. According to the experimental result, we are able to obtain a phase diagram similar to Theumann’s theoretical model. This work also observed non-Fermi-liquid behavior from the ρ(T) and χ(T) measurements at x=0.6, indicating this series to lie in the vicinity of a quantum critical point at this content.     

Structural and magnetic properties of Cr<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>V<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Te (<Emphasis Type="Italic">x</Emphasis> = 0−0.4) solid solutions

Cr_1?x V _x Te solid solutions with a hexagonal structure (NiAs type) have been obtained in the composition range x = 0?0.4 by direct melting of elemental mixtures, followed by annealing and quenching. The 80-K magnetic moment is found to decrease from 2.4μ_B in CrTe to 1.52μ_B in Cr_0.6V_0.4Te. The Curie temperature varies from 342 K to 321 K, respectively.     

Optical and electrical properties of amorphous Si<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>C<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>:H films

We report the optical and electrical properties of a-Si:H and a-Si_{1 − x} C _x :H (x = 0.06, 0.17, 0.25,0.32) amorphous films produced by plasma deposition at constant hydrogen content. IR absorption data are used to evaluate the density of Si-H and C-H bonds and the hydrogen concentration in the films. The activation energy for conduction and the carrier mobility in the films are determined from the temperature dependence of their electrical conductivity.     

Microhardness of the YbAg<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>In<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Cu<Subscript>4</Subscript> alloy system

We report Vickers microhardness measurements on flux grown single crystals of the YbAg_xIn_{1 − x}Cu₄ alloy system. Although sample dependent, the microhardness exhibits a clear concentration dependence: in general, it decreases with x. The lattice parameter as a function of x exhibits a similar behavior. For x < 0.5, where the lattice parameter is almost constant, the microhardness exhibits a weak enhancement. Similar concentration dependence of the lattice parameter, resistivity and microhardness allows us to conclude that the microhardness reflects the evolution of the YbAg_xIn_{1 − x}Cu₄ alloy system towards more metallic character with increasing x.     

Thermal conductivity of Er<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Sn<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Se (<Emphasis Type="Italic">x</Emphasis> ≤ 0.025) solid solutions

The thermal conductivity of Er _x Sn_{1 ? x} Se solid solutions has been measured at temperatures from 80 to 360 K. The results have been used to evaluate the electronic and lattice components of thermal conductivity for elastic carrier scattering, parabolic bands, and arbitrary degeneracy. With increasing erbium content and temperature, both the electronic and lattice components decrease considerably. Long-term annealing increases both components. It follows from the present experimental data that heat conduction in Er _x Sn_{1 ? x} Se is mainly due to phonons and that the observed rise in thermal resistance with Er content is due to phonon-phonon and paramagnetic-ion scattering.     

Properties of amorphous Si<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Ge<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>:H (<Emphasis Type="Italic">x</Emphasis> = 0−1) films

Plasma deposition has been used to grow Si_1?x Ge _x :H(x= 0 ? 1) films, undoped and doped with PH₃ or B₂H₆, for p-i-n solar cells and other optoelectronic applications. The optical, electrical, and photoelectric properties of the films have been studied at constant hydrogenation and doping levels. The films deposited under appropriate conditions are amorphous, and three-layer solar cells fabricated from such films offer an efficiency of 9.5% at an illumination of 100 mW/cm². The photoresponse of the a-Si_{1 ? x} Ge _x :H films strongly depends on Ge content. The hydrogen concentration in the films was controlled by varying the gas phase composition and was determined from the IR absorption in the films.     

Mechanism of AC charge transport in TlSb<Subscript>1–<Emphasis Type="Italic">x</Emphasis></Subscript>Ga<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>S<Subscript>2</Subscript> (<Emphasis Type="Italic">x</Emphasis> = 0 and 0.03)

The dielectric properties and ac electrical conductivity of TlSb_1–xGa _x S₂ (x = 0, 0.03) single-crystals have been measured in the frequency range 5 × 10⁴ to 3.5 × 10⁷ Hz. Experimental data on the frequency dispersion of the dielectric coefficients and electrical conductivity of the TlSb_1–xGa _x S₂ (x = 0, 0.03) single crystals have allowed us to identify the nature of the dielectric loss and the mechanism of charge transport and evaluate parameters of localized states in the band gap. The incorporation of gallium atoms into the crystal lattice of TlSbS₂ crystals has been shown to lead to an increase in the Fermi-level density of states and mean hop time and distance.     

Preparation and Properties of Mn<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Hg<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Te

Mn _x Hg_{1 ? x}Te (x = 0.05, 0.12) single crystals were grown by solid-state recrystallization, and their axial and radial homogeneity was assessed by optical, electrical, and electron-microscopic measurements. The crystals are p-type, with a hole concentration of (4.3–5.3) × 10²² m^?3 and Hall mobility in the range (410–570) × 10^?4 m²/(V s).     

Shock compression of Cu<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Zr<Subscript>100−<Emphasis Type="Italic">x</Emphasis></Subscript> metallic glasses from molecular dynamics simulations

The shock response of Cu _x Zr_100?x (x = 30, 50 and 70) metallic glasses (MGs) is characterized using large-scale molecular dynamics simulations. A wide range of piston velocities U _p = 0.125–2.5 km/s are simulated corresponding to shock pressures from 3 to 130 GPa. Independent of composition, the metallic glasses exhibit the following shock wave propagation regimes: (1) single elastic shock wave for U _p < 0.25 km/s, (2) split elastic and plastic shock waves for 0.25 < U _p < 0.75 km/s and (3) overdriven plastic shock wave with a narrow elastic precursor for U _p > 0.75 km/s. Within the split wave and overdriven regimes, the amplitude of the elastic precursor increases with increasing shock intensity, thereby indicating a pressure-dependent yield criterion. Hugoniot states are strongly dependent on the Cu content of the MG with Cu₇₀Zr₃₀ exhibiting a much higher resistance to plastic deformation than either Cu₅₀Zr₅₀ or Cu₃₀Zr₇₀.     

Magnetic Properties of CuTi<Subscript>2−2<Emphasis Type="Italic">x</Emphasis></Subscript>Cr<Subscript>2<Emphasis Type="Italic">x</Emphasis></Subscript>S<Subscript>4</Subscript> Materials

The magnetic properties of semi-conductor CuTi_2−2x Cr_2x S₄ systems have been studied. The nearest neighbour J ₁(x) and the next-neighbour super-exchange J ₂(x) interactions are evaluated by using the mean field theory for this spinel CuTi_2−2x Cr_2x S₄ system. The magnetic energy, the intraplanar and the interplanar interactions are deduced. The high-temperature series expansion (HTSE) combined with the Padé approximants method (PA) is applied to this spinel system to determinate the magnetic phase diagrams, i.e. T _C versus dilution x. The critical exponents associated with the magnetic susceptibility (γ) and with the correlation length (ν) are deduced in order phase.     

Mechanism of nanostructuring in fluorite-like Ca<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>La<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>F<Subscript>2 + <Emphasis Type="Italic">x</Emphasis></Subscript>

Nanostructuring in fluorite-like Ca_{1 ? x} La _x F_{2 + x} is shown to be associated with the precipitation of an CuAu-ordered phase. The shape of the precipitates is governed by the energetics of the {001} and {111} faces of tetragonal inclusions in highly anisotropic media and is nearly cuboctahedral. The misfit strain relaxes through the generation of twins, which nucleate along the intersection lines of {001} and {111} faces. The twins impede facial development and further growth and ordering of precipitates, thereby freezing the precipitation process in its initial stage. For this reason, the phase segregation is difficult to reveal, and Ca_{1 ? x} La _x F_{2 + x} crystals appear homogeneous.