碳掺杂GaAs的MBE生长

本文在国内首次采用自行设计的碳纤维束源炉及固态源ＭＢＥ技术生长了优质碳掺杂ＧａＡｓ、ＡｌＧａＡｓ及δ碳掺杂ＧａＡｓ外延层。获得了空穴浓度从４×１０１４ｃｍ－３到２×１０１９ｃｍ－３的ＧａＡｓ材料。用霍尔效应测量仪、电化学ＣＶ剖面仪和Ｘ射线双晶衍射仪分析了外延层的质量。用Ｎｏｍａｒｓｋｉ干涉显微镜和原子力显微镜分析了ＧａＡｓ的生长过程。结果表明碳是ＧａＡｓＩＩＶ族化合物半导体的极好的ｐ型掺杂剂。     

鸡痘病毒282E4株基因组末端非必需区的序列测定与分析

将鸡痘病毒（ｆｏｗｌｐｏｘ ｖｉｒｕｓ，ＦＰＶ）２８２Ｅ４株７．３ｋｂ的ＢａｍＨＩ片段经亚克隆后，获得ｐＵＦａ，ｐＫＳＦｂ，ｐＵＦｃ和ｐＵＦｄ四个重组策粒。采用ＡＢＩ ３７７ＤＮＡ测序仪荧光标记法对上述质粒进行了序列测定，并应用ＤＮＡ ｓｉｓ Ｖ７．０同ＧｅｎＢａｎｋ中已知的ＦＰＶ序列和痘苗病毒的Ｃｏｐｅｎｈａｇｅｎ株的全序列进行同源性比较。     

Cs／p—GaAs（100）表面的变角XPS研究

在实验数据的基础上，采用变角ＸＰＳ分析表面层状结构的计算程序，应用了新算法，使该程序能快速可靠地计算多层多种组分的含量和层厚度。计算了Ｃｓ吸附在清洁ｐ－ＧａＡｓ（１００）表面上的Ｃｓ层覆盖率及弛豫层的厚度和组分。在Ｃｓ／ＧａＡｓ达到峰值光电发射时，Ｃｓ覆盖率为０．７１个单层，Ｇａ、Ａｓ弛豫层厚度为２．３个单层，Ｇａ相对．Ａｓ轻微富集。     

国产金属有机化合物TMGa,TMAl,TMIn和TMSb的MOVPE鉴定

利用我们研制的常压ＭＯＶＰＥ设备对国产ＴＭＧａ、ＴＭＡｌ、ＴＭＩｎ和ＴＭＳｂ进行了鉴定，为此分别生长了ＧａＡｓ、ＡｌＧａＡｓ、ＩｎＰ、ＧａＳｂ外延层和ＧａＡｓ／ＡｌＡｓ、ＧａＳｂ／ＩｎＧａＳｂ超晶格和ＧａＡｓ／ＡｌＧａＡｓ量子阱结构。表征材料纯度的７７Ｋ载流予迁移率分别达到ＧａＡｓ：μ＿ｎ＝５６６００ｃｍ￣２／Ｖ·ｓ，Ａｌ＿（０．２５）Ｇａ＿（０．７５）Ａｓ：μ＿ｎ＝５１６０ｃｍ￣２／Ｖ·ｓ，ＩｎＰ：μ＿ｎ＝６５３００ｃｍ￣２／Ｖ·ｓ，ＧａＳｂ：μ＿ｐ＝５０７６ｃｍ￣２／Ｖ·ｓ。由１０个周期的ＧａＡｓ／ＡｌＡｓ超晶格结构组成的可见光区布拉格反射器已观测到很好的反射光谱和双晶Ｘ射线回摆曲线上高达±２０级的卫星峰。ＧａＡｓ／Ａｌ＿（０．３５）Ｇａ＿（０．６５）Ａｓ量子阱最小阱宽为１０，在ｌｉＫ下由量子尺寸效应导致的光致发光峰能量移动为３９０ｍｅＶ，其线宽为１２ｍｅＶ。这些结果表明上述金属有机化合物已达到较高质量。     

酵母人工染色体载体的改造和修饰

将能在植物中表达的烟草花叶病毒ＣａＭＶ３５Ｓ启动子、ＧＵＳ基因、潮霉素（Ｈｙｇｒｏｍｙｃｉｎ）基因及ＭＯＳ终止子组建到酵母人工染色体（ＹＡＣ）载体，构建了具有能在植物细胞中表达和选择ｐＹＡＶ、ＧＵＳ、ｐＪＳ９７／ｐＪＳ９８－ＨＹ ＹＡＣ载体系体系统和一个标记ＹＡＣ克隆的ｐＵＲ４３－ＨＹ质粒。     

连续输出20WAlGaAs／GaAs量子阱激光二极管线列阵

采用ＭＯＣＶＤ实现了ＡｌＧａＡｓ／ＧａＡｓ量子阱结构，获得了连续输出２０Ｗ激光二极管线列阵，线列阵长度１．０ｃｍ，激射波长８０８±４ｎｍ。     

δ－掺杂GaAs／AlxGa_（1－x）As二维电子气结构材料的GSMBE生长与特性

本文用ＧＳＭＢＥ技术生长纯度ＧａＡｓ和δ－掺杂ＧａＡｓ／Ａｌ_ｘＧａ_（１－ｘ）Ａｓ结构二维电子气材料并对其电学性能进行了研究。对于纯度ＧａＡｓ的ＧＳＭＢＥ生长和研究，在低掺Ｓｉ时，载流子浓度为２×１０~（１４）ｃｍ~（－３），７７Ｋ时的迁移率可达８４，０００ｃｍ~２／Ｖ．ｓ。对于用ＧＳＭＢＥ技术生长的δ－掺杂ＧａＡｓ／Ａｌ_ｘＧａ_（１－ｘ）Ａｓ二维电子气材料，在优化了材料结构和生长工艺后，得到了液氮温度和６Ｋ迁移率分别为１７３，５８３ｃｍ~２／Ｖ．５和７．６７×１０~５ｃｍ~２／Ｖ．ｓ的高质量ＧａＡｓ／Ａｌ_ｘＧａ_（１－ｘ）Ａｓ二维电子气材料。     

Ge/GaAs中APD及薄膜性能研究

研究了一种光纤通讯用光电探测器。在ＧａＡｓ上蒸镀８００ｎｍ的Ｇｅ,并在此材料基础上提出了一种吸收倍增分离的雪崩二极管（ＳＡＭ－ＡＰＤ）的结构设计,采用ＧａＡｓ作为倍增区,Ｇｅ作为吸收区。在此结构上初步制作的二极管正向开启电压为０．２￣０．３Ｖ,反向击穿电压为２．５Ｖ,漏电不明显,ｐ－ｎ结特性良好。     

n型GaSb,InGaAsSb的MBE生长和特性研究

本文报导了非故意掺杂ＩｎＧａＡｓＳｂ本底浓度的降低和掺Ｔｅｎ型ＧａＳｂ和ＩｎＧａＡｓＳｂ的ＭＢＥ生长与特性的研究结果。结果表明，通过生长工艺的优化，ＧａＳｂ和ＩｎＧａＡｓＳｂ的背景空穴浓度可分别降至１．１×１０~（１６）ｃｍ~（－３）和４×１０~（１６）ｃｍ~（－３），室温空穴迁移率分别为９４０ｃｍ２／ｖ．ｓ和２６０ｃｍ~２／ｖ．ｓ。用Ｔｅ作ｎ型掺杂剂，可获得载流子浓度在１０~（１６）～１０~（１８）ｃｍ~（－３）的优质ＧａＳｂ和ＩｎＧａＡｓＳｂ外延层，所研制的材料已成功地制备出Ｄ_λ~＊＝４×１０~（１０）ｃｍＨｚ~（１／２）／Ｗ的室温ＩｎＧａＡｓＳｂ红外探测器和室温脉冲ＡｌＧａＡｓＳｂ／ＩｎＧａＡｓＳｂ双异质结激光器。     

Ga－Al－As－Si系统中Si的两性掺杂行为的研究

对Ｓｉ在电液相外延Ｇａ－Ａｌ－Ａｓ－Ｓｉ系统中的两性掺杂行为进行了研究。提出了一种恒温生长Ｇａ＿（１－ｘ）Ａｌ＿ｘＡｓ：Ｓｉｐ－ｎ结的新方法，对这种ｐ－ｎ结的成因作了定性的解释，并对这种ｐ－ｎ结的电特性加以观察。     

碳纳米管非金属掺杂对结构和性能影响的研究

通过讨论氮、硼、硅、氟等非金属原子掺杂的碳纳米管,对场电子发射特性的影响。介绍了掺杂在场电子发射、能源电池、气体传感器等领域的研究和应用。掺杂可以增加碳纳米管的缺陷,改变其电子结构。掺杂可使碳纳米管转变为n型半导体或是金属性导体,将提高场发射性能。同时,掺杂亦可使碳纳米管向P型半导体转变,这将不利于场发射性能改善。当场发射性能随着掺杂浓度升高而提高时,存在最佳掺杂浓度值,一旦超出,则场发射性能逐渐下降。因此,研究碳纳米管非金属掺杂具有重要的应用价值。     

Doping of Carbon Materials for Metal‐Free Electrocatalysis

Carbon atoms in the graphitic carbon skeleton can be replaced by heteroatoms with different electronegative from that of the carbon atom (i.e., heteroatom doping) to modulate the charge distribution over the carbon network. The charge modulation can be achieved via direct charge transfer with an electron acceptor/donor (i.e., charge transfer doping) or through introduction of defects (i.e., defective doping). Various doping strategies, including heteroatom doping, charge‐transfer doping, and defective doping, have now been devised for modulating the charge distribution of numerous graphite carbon materials to impart new properties to carbon materials. Consequently, carbon nanomaterials with defined doping have recently become prominent members in the carbon family, promising for a variety of applications, including catalysis, energy conversion and storage, environmental remediation, and important chemical production and industrial processes. The purpose of this review is to present an overview on the doping of carbon materials for metal‐free electrocatalysis, especially the development of doping strategies and doping‐induced structure and property changes for potential catalytic applications. Current challenges and future perspectives in the doped carbon‐based metal‐free catalyst field are also discussed.     

Defect Engineering and Surface Functionalization of Nanocarbons for Metal‐Free Catalysis

With the advent of carbon nanotechnology, which initiated significant research efforts more than two decades ago, novel materials for energy harvesting and storage have emerged at an amazing pace. Nevertheless, some fundamental applications are still dominated by traditional materials, and it is especially evident in the case of catalysis, and environmental‐related electrochemical reactions, where precious metals such as Pt and Ir are widely used. Several strategies are being explored for achieving competitive and feasible metal‐free carbon nanomaterials, among which doping and defect engineering approaches within nanocarbons are recurrent and promising. Here, the most recent efforts regarding the control of doping and defects in carbon nanostructures for catalysis, and in particular for energy‐related applications, are addressed. Finally, an overview of alternative proposals that can make a difference when enabling carbon nanomaterials as efficient and emerging catalysts is presented.     

Nitrogen doping in carbon nanotubes

Nitrogen doping of single and multi-walled carbon nanotubes is of great interest both fundamentally, to explore the effect of dopants on quasi-1D electrical conductors, and for applications such as field emission tips, lithium storage, composites and nanoelectronic devices. We present an extensive review of the current state of the art in nitrogen doping of carbon nanotubes, including synthesis techniques, and comparison with nitrogen doped carbon thin films and azofullerenes. Nitrogen doping significantly alters nanotube morphology, leading to compartmentalised 'bamboo' nanotube structures. We review spectroscopic studies of nitrogen dopants using techniques such as X-ray photoemission spectroscopy, electron energy loss spectroscopy and Raman studies, and associated theoretical models. We discuss the role of nanotube curvature and chirality (notably whether the nanotubes are metallic or semiconducting), and the effect of doping on nanotube surface chemistry. Finally we review the effect of nitrogen on the transport properties of carbon nanotubes, notably its ability to induce negative differential resistance in semiconducting tubes.     

纳米碳纤维的制备方法及其吸波特性

论述了高温吸波材料--纳米碳纤维的制备方法、吸波性能,并通过比较给出了不同制备方法的特点;讨论了温度、掺杂和表面改性等对纳米碳纤维吸波性能的影响,展望了纳米碳纤维及其复合材料的应用前景.     

Electronic and photonic properties of doped carbon nanotubes

The idea of doping carbon nanotubes is attractive since it provides various possibilities for controlling the physical properties of carbon nanotubes. In this review, we have summarized recent progress on the experimental and theoretical studies of carbon nanotubes doped with nonmetals, alkali metals, transition metals, and clusters. The doping effects on the electronic, magnetic, transport, and optical properties of carbon nanotubes are reviewed. The related applications of carbon nanotubes in nanoelectronics, battery, field emission, spintronics, nonlinear optics, and chemical sensors are discussed.     

Field emission in doped nanotubes

Doping into nanotubes is an attractive and significant way to tailor their electron transport and emission properties. This article reviews some recent experimental and theoretical advances in the studies of doping behaviors in carbon nanotubes and gallium nitrogen nanotubes, and doping effects on their field electron emission properties. The general theory for field emission mechanism of one-dimensional nanosystems is presented to provide an overall picture of the field emission process and doping behavior. Potential applications of doped nanotubes as diverse nanoscale emitters, microscopy probes, electronic guns and nanoelectronic devices are discussed.     

25th Anniversary Article: Chemically Modified/Doped Carbon Nanotubes & Graphene for Optimized Nanostructures & Nanodevices

Outstanding pristine properties of carbon nanotubes and graphene have limited the scope for real‐life applications without precise controllability of the material structures and properties. This invited article to celebrate the 25^th anniversary of Advanced Materials reviews the current research status in the chemical modification/doping of carbon nanotubes and graphene and their relevant applications with optimized structures and properties. A broad aspect of specific correlations between chemical modification/doping schemes of the graphitic carbons with their novel tunable material properties is summarized. An overview of the practical benefits from chemical modification/doping, including the controllability of electronic energy level, charge carrier density, surface energy and surface reactivity for diverse advanced applications is presented, namely flexible electronics/optoelectronics, energy conversion/storage, nanocomposites, and environmental remediation, with a particular emphasis on their optimized interfacial structures and properties. Future research direction is also proposed to surpass existing technological bottlenecks and realize idealized graphitic carbon applications.     

锂离子电池炭阳极材料的研究进展

解释了锂离子二次电池的工作原理。锂离子电池阳极活性材料为炭—石墨，阳极容量是制约锂离子二次电池关键因素。阐述了影响阳极容量的各个因素，详细介绍了已经在使用的阳极材料的性能和特点。各种热解硬炭材料正在成为新的研究热点，故介绍了各种高容量的热解硬炭材料的性能和结构，尤其是聚对苯撑的热解炭，以及他们的插锂机制。     

Diamond-like amorphous carbon

Diamond-like carbon (DLC) is a metastable form of amorphous carbon with significant sp³ bonding. DLC is a semiconductor with a high mechanical hardness, chemical inertness, and optical transparency. This review will describe the deposition methods, deposition mechanisms, characterisation methods, electronic structure, gap states, defects, doping, luminescence, field emission, mechanical properties and some applications of DLCs. The films have widespread applications as protective coatings in areas, such as magnetic storage disks, optical windows and micro-electromechanical devices (MEMs).