Study of warpage due to P-V-T-C relation of EMC in IC packaging

There were many studies about the prediction of warpage due to thermal mismatch , . However, cure induced warpage is usually ignored and the results can be inaccurate. To minimize this problem, a thorough understanding of epoxy molding compound (EMC) with pressure-volume-temperature-cure (P-V-T-C) relation is necessary. This paper used the P-V-T-C relation of an encapsulation material to formulate the stress-strain relationship. With the help of finite element method (FEM) and mold flow analysis, warpage predictions combined with P-V-T-C relation were performed and the results show that this approach is practical. For a given P-V-T-C relation, the shrinkage direction is pointing toward the gate and maximum warpage usually occurs at the boundary of an integrated circuit (IC) package. Variation of specific volume difference along the flow direction is larger than that perpendicular to the flow direction. When temperature difference is small in thickness direction, specific volume difference in thickness direction varies only slightly.     

基于扇出型封装塑封材料性能的表征研究

扇出型封装在塑封过程中会出现芯片偏移及翘曲等缺陷,详细了解环氧塑封材料(EMC)的特性能够准确预测封装材料、结构、塑封工艺对塑封效果的影响。针对用于扇出型封装的EMC材料采用动态机械分析仪、差示扫描量热仪、流变仪测试其动态力学性能、固化动力学性能、流变学性能和热容,并建立可用于有限元分析的材料特性数学模型。结果表明,EMC在150℃等温固化60 min后具有最少残余固化;100℃环境下黏度随温度增加速率最快;时温等效原理可预测实验频率以外的力学行为。模型曲线与实验数据的拟合优度均大于0.982,材料表征模型满足准确性与适用性的要求。     

Warpage simulation for the reconstituted wafer used in fan-out wafer level packaging

Fan-out packaging technology involves processing redistribution interconnects on reconstituted wafer, which takes the form of an array of silicon dies embedded in epoxy molding compound (EMC). Yields of the redistribution interconnect processes are significantly affected by the warpage of the reconstituted wafer. The warpage can be attributed to the crosslinking reaction and viscoelastic relaxation of the EMC, and to the thermal expansion mismatch between dissimilar materials during the reconstitution thermal processes. In this study, the coupled chemical-thermomechanical deformation mechanism of a commercial EMC was characterized and incorporated in a finite element model for considering the warpage evolution during the reconstitution thermal processes. Results of the analyses indicate that the warpage is strongly influenced by the volume percentage of Si in the reconstituted wafer and the viscoelastic relaxation of the EMC. On the other hand, contribution from the chemical shrinkage of the commercial EMC on warpage is insignificant. As such, evaluations based on the comprehensive chemical-thermomechanical model considering the full process history can be approximated by the estimations from a simplified viscoelastic warpage model considering only the thermal excursion.     

Warpage evolution of overmolded ball grid array package during post-mold curing thermal process

Two of the main driving forces for warpage deformation and residual stress in electronic packages are the thermal expansion mismatch between dissimilar package constituents and the crosslinking reaction of polymers during packaging thermal processes. For the purpose of quantitatively characterizing these two driving forces and assessing the process effect on warpage deformation, experimental and numerical analyses were applied to study the warpage evolution of overmolded ball grid array (BGA) package under post-mold curing (PMC) thermal histories. From in situ shadow Moiré warpage analyses on bimaterial and package specimens, it was observed that, during the isothermal curing condition, a significant increase in specimen warpage occurred as a result of molding compound shrinkage. A numerical modeling procedure that incorporates the models for the thermochemical cure kinetics, the curing- and chemical aging-induced shrinkage strains, and the cure-dependent viscoelastic relaxation modulus for the molding compound was then applied to simulate and compare to the experimentally obtained warpage evolutions. It can be seen from the analysis results that the evolution of package warpage over multiple thermal histories can be superpositioned by the thermal expansion mismatch-driven warpage change during non-isothermal stages and the chemical shrinkage-induced warpage evolution during isothermal aging at temperatures above the material glass transition point.     

Numerical investigation and experimental validation of residual stresses building up in microelectronics packaging

This paper comprises the numerical approach and the experimental validation technique developed to obtain the residual stresses building up during encapsulation process of integrated circuits. Residual stresses can be divided into cure and cooling induced parts. The curing originated stress had been mostly neglected in the literature and a special attention had always been given to detection of the thermal induced stress. In this study, both of the residual stresses, evolving during packaging, were investigated independently. The material behavior of the epoxy molding compound, EMC, was determined by the series of characterization experiments. The volumetric behavior of the EMC was investigated using PVT analysis, in which the total cure shrinkage of an initially uncured sample and the coefficient of thermal expansion of the same sample after full conversion were determined. The cure kinetics was studied using differential scanning calorimetry, DSC. The dynamic mechanical behavior was examined by dynamic mechanical analysis, DMA, at a fixed frequency. Besides, the time dependent behavior of the EMC was also determined by implementing the time–temperature superposition, TTS, test set-up in DMA. The shift factor was modeled using the combination of the WLF equation and the polynomial of second degree. The constitutive equations were developed based on the applied boundary conditions and the epoxy compound's mechanical behavior in the respective stage. A two dimensional numerical model was constructed using a commercially available finite element software package. For the experimental verification of the numerically obtained residual stresses a flexible board with the stress measuring chip was encapsulated. The real-time stress data were measured during the encapsulation. Using this technique, the in-plane stresses and the temperature changes during the die encapsulation were measured successfully. Furthermore, the measured stress data was compared with the predicted numerical results of the cure and the thermal stages, independently.     

环氧树脂对环氧模塑料(EMC)的性能影响分析

在环氧模塑料中,环氧树脂是环氧模塑料的基体树脂,也是环氧模塑料的主要原材料,起着将其他组分交联结合到一起的重要作用。环氧树脂作为环氧模塑料的胶粘剂,具有粘合性高、固化收缩率小、耐化学介质稳定性好、电绝缘性优良、工艺性能良好等特点。因此环氧树脂类型的选择及其性能对环氧模塑料的性能都有很大的影响。文章简单介绍了环氧树脂的分类、结构、作用及特点,主要探讨了不同结构环氧树脂对环氧模塑料的粘接性、稳定性、收缩率、电性能及机械性能等的影响。     

Predicting the process induced warpage of electronic packages using the P–V–T–C equation and the Taguchi method

A critical issue in the manufacturing of electronic packages is the warpage induced during the molding process as a result of differences in the shrinkage of the constituent materials. Package warpage causes serious problems such as the quality degradation of devices and yield loss in manufacturing processes. Loss of lead coplanarity happens due to package warpage and causes difficulty in device testing and surface mount assembly. Internal stresses associated with package warpage can also cause device failures such as die cracking, broken circuits and package cracking.Warpage in IC package has drawn intensive attention in the past. Although the effects of thermal shrinkage were extensively investigated in the literatures, the influence of the cure shrinkage on package warpage had received less attention. Accordingly, this study develops a numerical approach for generating more accurate predictions of the package warpage by taking the effects of both thermal shrinkage and cure shrinkage into account. A three-dimensional finite element model of the small outline package (TSOP) DBS-27P is constructed and the proposed numerical approach, which is based on the P–V–T–C (pressure–volume–temperature–conversion) equation and the CTEs (coefficients of thermal expansion) of the package materials, is employed to predict the warpage at each of its corners under various packaging processing conditions. Using the Taguchi method, the relative influences of the transfer pressure, the packing pressure, the mold temperature and the curing time on the degree of package warpage are identified and the optimal processing conditions are established. A series of experimental packaging trials are performed using the optimal processing conditions. It is found that the warpage of the actual package is in good agreement with that predicted numerically. Therefore, the accuracy of the proposed numerical approach is confirmed. Moreover, the results also demonstrate the capability of the Taguchi method to identify the optimal packaging processing parameters on the basis of a limited number of simulation runs.     

Determination of residual strains of the EMC in PBGA during manufacturing and IR solder reflow processes

Even though recently published results indicated that residual strains of the epoxy molding compound (EMC) play a key role on the warpage values and shapes of the plastic ball grid array (PBGA) packages, it is still unknown about how these residual strains build up and change during the manufacturing and infrared (IR) solder reflow processes. The purpose of this study is to quantify the residual strains of the EMC in the PBGA packages during the aforementioned processes using a combination of experimental, theoretical and numerical approaches. In the experiments, a full-field shadow moiré is used for measuring their real-time out-of-plane deformation (warpage), during heating and cooling conditions, of two types of the PBGA specimens (without a silicon chip inside) with the same EMC but different substrates (with glass transition temperature T_g = 172 and 202 °C). Furthermore, Timoshenko’s bi-material theory associated with the measured and temperature-dependent elastic moduli and coefficients of thermal expansion for the EMC and substrates is applied for extracting residual strains of the EMC from shadow moiré results. In the analysis, the finite element method cooperating with those determined residual strains is employed to numerically simulate the thermal-induced deformations of the PBGA specimens, in order to verify mechanics. The full-field warpage of the specimens from shadow moiré is documented before and after post-mold curing, solder reflow and during the temperature cycling (from room temperature to 260 °C). The residual strains of the EMC for the specimens with low-T_g and high-T_g substrates after post-mold curing are found to be 0.059% and 0.134%, respectively, which double those before post-mold curing, and further down to 0.035% and 0.08% after the first thermal cycling. After the first cycling, the residual strains remain almost constant during heating and cooling processes. This phenomenon is also observed at lead-free solder reflow processes. Therefore, the residual strains of the EMC induced by the chemical shrinkage of the EMC curing and possibly mold flow pressure are different between the specimens with low-T_g and high-T_g substrates, and these residual strains could change during post-mold curing and the first solder reflow processes.     

环氧模塑料中导热通道的构造与导热性能

以低密度聚乙烯(LDPE)为原料,添加不同含量的高导热氮化硅陶瓷颗粒和短切玻璃纤维,熔融挤出不同直径的Si3N4/LDPE杆料。采用热模压法制备了环氧模塑料(EMC)。研究了杆料直径、陶瓷填充量对EMC导热性能、介电性能的影响。结果表明:在相同填充量下,杆料直径越大,样品热导率越大;5mm含玻纤杆料φ(填充量)为40%,热导率高达2.1W/(m·K)。样品的εr随杆料填充量的增大而显著减小,φ5mm含玻纤杆料填充量为40%时降至最低,为3.25(1MHz)。     

Stabilized filling simulation of microchip encapsulation process

The filling process is a key stage of plastic encapsulation, which mainly affects the reliability of chips. This paper presents a stabilized filling simulation method of microchip encapsulation process. In this method, the non-isothermal and incompressible N-S equations coupled with the Kamal curing equation is introduced in as governing equations, and the Castro-Macosko model is employed as the constitutive model of the epoxy molding compound (EMC). The Galerkin/least-squares (GLS)-stabilized finite element method is used to solve the governing equations. With GLS scheme, numerical surge during the solution is relieved and equal order interpolation for velocity field and pressure field is achieved at the same time. A new kind of Euler’s method named piecewise linear interface calculation (PLIC)-flow analysis network (FAN) is proposed to track and describe the flow fronts for each time step. The experimental and numerical results are found to be in good agreement, which proves the accuracy and stabilization of this method.     

温度对环氧模塑料性能的影响

环氧模塑料(EMC)作为半导体产业的三大基材之一,其性能对成品器件、IC品质至关重要。凝胶化时间(GT)和螺旋长度(SF)是环氧模塑料的两个基本性能表征指标,直接决定封装工艺参数选择范围,而温度对其影响极大。制备过程、存贮、回温(Thawing)及模压(Molding)等系列工序的操作及环境温度,对EMC的综合性能有着不同程度的影响。不恰当的温度可能会导致模压操作性不良、封装体缺陷及半导体器件(电路)的成品性能下降或失效。文章重点阐述温度对EMC使用、半导体成品性能的影响。     

环氧模塑封材料的热–机械疲劳失效分析

封装材料的热疲劳失效是封装器件失效的主要原因之一.对在微电子封装中应用很广的环氧模塑封装材料进行了常温和高温下的拉伸、疲劳实验.基于以疲劳模量作为损伤因子的疲劳寿命预测模型,相应的材料参数通过实验获得.并通过实验得出了该环氧模塑封装材料考虑温度影响的疲劳寿命预测模型,利用该模型可以对微电子封装用高聚物的疲劳寿命进行预测.     

环氧模塑封材料的热-机械疲劳失效分析

封装材料的热疲劳失效是封装器件失效的主要原因之一。对在微电子封装中应用很广的环氧模塑封装材料进行了常温和高温下的拉伸、疲劳实验。基于以疲劳模量作为损伤因子的疲劳寿命预测模型,相应的材料参数通过实验获得。并通过实验得出了该环氧模塑封装材料考虑温度影响的疲劳寿命预测模型,利用该模型可以对微电子封装用高聚物的疲劳寿命进行预测。     

Preparation and Characterization of a Novel Epoxy Molding Compound with Low Storage Modulus at High Temperature and Low Glass-Transition Temperature

Epoxy molding compound (EMC) has been widely used as a main material for encapsulation and protection of semiconductor packages because of its low cost, high moisture resistance, high heat resistance, and good mechanical performance. Due to the extensive application of lead-free solder in place of Sn-Pb, soldering temperature is higher than before; this demands that EMC, which is usually used for lead-free solder, should have extremely low thermal stress and excellent stability at elevated temperatures. In this work, 1,3-propanediol bis(4-aminobenzoate) (PBA) was added to an EMC product to form a novel epoxy molding compound (FEMC). PBA had very limited effect on the process feasibility of EMC, and caused reduction of the storage modulus by 40% to 50% at high temperatures and reduction of the glass-transition temperature by more than 10°C, which are very helpful to reduce thermal stress buildup during high-temperature soldering processes. The increases of the tab pull force of copper- and silver-plated lead frames within EMC due to PBA were up to 58% and 117%, respectively. With increasing PBA content in the EMC, water absorption increased in a linear fashion, so the amount of PBA added to the EMC should be limited, preferably to not more than 1%.     

The effect of hygro-mechanical and thermo-mechanical stress on delamination of gold bump

The reliability of the FC–CSP (flip chip–chip scaled package) package with gold bump at the MRT (moisture resistance test) reflow temperature, was evaluated by using the finite element method. The moisture properties of EMC (epoxy molding compound) obtained from the test described in JEDEC standard, were used to characterize the local moisture concentration analysis by transient moisture diffusion, the hygro-mechanical analysis by CME, the vapor pressure analysis and the thermo-mechanical analysis by CTE mismatch. Also, after precondition, the package reliability under the reflow process was predicted, by comparing and integrating each factors, package swelling and stress due to by vapor pressure, as well as thermo-mechanical stress. Consequently, the result showed that the effects on hygro-mechanical stress and vapor pressure in a package could not be negligible, when it is compared with that of the thermo-mechanical stress by CTE mismatch, which is recognized as the main effect on the package crack under reflow temperature. The stress was concentrated at interface between gold bump and die, where most of delamination occurred.     

复合陶瓷颗粒/环氧模塑料的制备与性能

选用SiO_2、Al_2O_3、Si_3N_4三种陶瓷颗粒的复合填充环氧模塑料(EMC),研究了不同填料种类、含量对EMC导热系数、热膨胀系数(CTE)、介电常数等性能的影响随着填料百分含量的增加,EMC的热导率、介电常数也随之增加,而其热膨胀系数显著下降相同体积百分含量下,Al_2O_3、Si_3N_4复合体系EMC热导率和介电常数高于SiO_2、Si_3N_4复合体系,而其热膨胀系数比后者低。百分含量为60%时,前者热导率达到2．254 W(m·K)~(-1)、后者达到2．04w(m·K)~(-1)。百分含量为65%时,其CTE分别为1．493×10~(-5)K~(-1)、1．643×10~(-5)K~(-1),同时两体系复合材料的介电常数可以维持在较低水平     

Numerical analysis of the warpage problem in TSOP

The reliability and the solderability of thin small outline package (TSOP) are significantly affected by the warpage that is generated after epoxy molding compound (EMC) molding process. This warpage problem mainly results from the mismatch of material properties such as Young's modulus, Poisson's ratio and coefficient of thermal expansion (CTE) and the geometric structure of each component for TSOP. The optimization of both material properties and geometric structures using the numerical analysis is necessary to reduce the warpage of TSOP. However, there are still some limitations for the numerical analysis to obtain proper results consistent with the practical warpage values. In this paper, the numerical analysis is performed under the assumption of elastic behavior for EMC. Furthermore, to solve the limitations, the material properties at the molding temperature and the degree of reaction rate at the end of the molding process of EMC are considered together for the analysis. This numerical analysis gives the higher warpage values than the measured ones, and is applicable to the practical design of the reliable electronic package.     

D2-FBGA热循环载荷下的结构参数优化

利用动态机械分析仪(DMA),测定环氧模塑封材料(EMC)的粘弹性数据;经过数据拟合处理,得到有限元仿真所需的相关参数.将D2-FBGA中芯片厚度、粘结剂厚度、部分EMC厚度及基板厚度作为优化参数,选用正交实验设计,建立了这四个参数的正交表;并用MSC、 Marc,计算了D2-FBGA在热循环载荷下的热应力分布.通过统计软件stata,建立了最大等效应力与上述参数的关系的回归方程;分析了各个结构参数对器件最大等效应力的影响程度;使用单纯形法,得出一组最优结构参数及对应的最大等效应力值.结果表明:通过优化,器件的最大等效应力从(90.58 MPa)下降到66.84 MPa,优化效果明显.     

热像仪对QFN封装表面发射率环境透射率的标定

使用红外热像仪对未切割分离的QFN封装在40~200℃进行了塑封料面、铜面和缝表面发射率的标定,并分别利用上述三面对实验环境的空气透射率进行了标定。结果表明:直接计算法和直接调节法可以很好地应用于塑封料发射率标定,直接计算法可以应用在缝处、铜面发射率标定。塑封料发射率标定结果在0.97左右;缝处发射率标定值随着温度升高由0.17~0.35呈线性递增趋势变化;铜面发射率标定值随温度升高出现先稳定后增大趋势。塑封料面、铜及缝处对空气透射率标定值在100%左右,上下波动不超过2%。该实验结果可为红外热像仪测定QFN的使用温度及切割分离时的温度提供相应参数。     

环氧模塑封装材料的蠕变损伤研究

文章对环氧模塑封装材料（EMC）的蠕变损伤进行了实验研究,对断口进行了扫描电镜观察,获取了EMC材料蠕变失效的微观机理。应用修正的Lermaitre蠕变损伤模型来描述损伤参数及预测蠕变损伤寿命。实验结果表明：EMC材料的蠕变具有明显的蠕变演化的三个阶段;颗粒与基质间的界面脱层和微空洞相互间的级联扩张是引发试样蠕变断裂失效的根本原因;由蠕变损伤模型预测的蠕变寿命在应力水平较低的情况下与实验吻合较好。