Excitonic properties of hydrogen saturation-edged armchair graphene nanoribbons

First-principle density functional theory calculations with quasiparticle corrections and many body effects are performed to study the electronic and optical properties of armchair graphene nanoribbons (AGNRs) with variant edges saturated by hydrogen atoms. The "effective width" method associated with the reported AGNR family effect is introduced to understand the electronic structures. The method is further confirmed by analyses of the optical transition spectra and the exciton wavefunctions. The optical properties, including the optical transition spectra, exciton binding energies and the distribution of exciton wavefunctions, can be tuned with the hydrogen saturation edge, thus providing an effective way to control the features of the AGNRs.     

Stacking dependent electronic structure and transport in bilayer graphene nanoribbons

The stacking-dependent electronic structure and transport properties of bilayer graphene nanoribbons suspended between gold electrodes are investigated using density functional theory coupled with non-equilibrium Green’s functional method. We find substantially enhanced electron transmission as well as tunneling currents in the AA stacking of bilayer nanoribbons compared to either single-layer or AB stacked bilayer nanoribbons. Interlayer separation between the nanoribbons appears to have a profound impact on the conducting features of the bilayer nanoribbons, which is found to be closely related to the topology and overlap between the edge-localized π orbitals.     

Edge effect on electronic transport properties of graphene nanoribbons and presence of perfectly conducting channel

Numerical calculations have been performed to elucidate unconventional electronic transport properties in disordered nanographene ribbons with zigzag edges (zigzag ribbons). The energy band structure of zigzag ribbons has two valleys that are well separated in momentum space, related to the two Dirac points of the graphene spectrum. The partial flat bands due to edge states make the imbalance between left- and right-going modes in each valley, i.e. appearance of a single chiral mode. This feature gives rise to a perfectly conducting channel in the disordered system, i.e. the average of conductance 〈g〉 converges exponentially to 1 conductance quantum per spin with increasing system length, provided impurity scattering does not connect the two valleys, as is the case for long-range impurity potentials. Ribbons with short-range impurity potentials, however, through inter-valley scattering, display ordinary localization behavior. Symmetry considerations lead to the classification of disordered zigzag ribbons into the unitary class for long-range impurities, and the orthogonal class for short-range impurities. The electronic states of graphene nanoribbons with general edge structures are also discussed, and it is demonstrated that chiral channels due to the edge states are realized even in more general edge structures except for armchair edges.     

Impurity effects on polaron dynamics in graphene nanoribbons

The impurity effects on the dynamics of polarons in armchair graphene nanoribbons are numerically investigated in the scope of a two-dimensional tight-binding approach with lattice relaxation. The results show that the presence of an impurity changes significantly the net charge distribution associated to the polaron structure. Moreover, the interplay between external electric field and the local impurities plays the role of drastically modifying the polaron dynamics. Interestingly, nanoribbons containing mobile polarons are noted to take place even when considering high impurity levels, which is associated with the highly conductive character of the graphene nanoribbons. This investigation may enlighten the understanding of the charge transport mechanism in carbon-based nanomaterials.     

A single particle Hamiltonian for electro-magnetic properties of graphene nanoribbons

Graphene zigzag edges are known to show the spin polarized ferromagnetic states, which are well described by the mean field treatment of Hubbard model. The parameter of onsite Coulomb interaction U is estimated to be comparable to the kinetic hopping parameter t so as to fit the electronic band structures obtained by the spin–polarized density functional theory (DFT). In this paper, we propose a simple way to transfer the electronic band structures obtained by DFT onto the mean-field Hubbard Hamiltonian by adopting site-dependent U parameter, which is taken as the decaying function from the edge. This approach is applicable to both anti-ferromagnetic and ferromagnetic states between two edges of graphene nanoribbons and will serve to perform the further large-scale simulation of electro-magnetic transport properties of graphene-based nanodevices.     

Redox-switchable devices based on functionalized graphene nanoribbons

The possibility of tuning the electronic properties of graphene by tailoring the morphology at the nanoscale or by chemical functionalization opens interesting perspectives towards the realization of devices for nanoelectronics. Indeed, the integration of the intrinsic high carrier mobilities of graphene with functionalities that are able to react to external stimuli allows in principle the realization of highly efficient nanostructured switches. In this paper, we report a novel approach to the design of reversible switches based on functionalized graphene nanoribbons, operating upon application of an external redox potential, which exhibit unprecedented ON/OFF ratios. The properties of the proposed systems are investigated by electronic structure and transport calculations based on density functional theory and rationalized in terms of valence-bond theory and Clar's sextet theory.     

Stiffness-dependent interlayer friction of graphene

The friction of graphene depends on thickness, but little is known how it is dependent on stiffness. Based on a graphene-spring model, using molecular dynamics simulations, we investigate the friction behavior of a graphene flake sliding on a supported graphene substrate. We show that the friction force increases exponentially with the decreasing stiffness. The stiffness is a dominant parameter for the friction of a soft substrate, e.g., where superlubricity may be completely impeded. We relate the friction to the substrate deformation and find that the indentation depth can be an indicator for the friction of soft substrates. These findings may provide a fundamental understanding for the stiffness dependent nanoscale friction.     

Structural and electronic properties of bilayer and trilayer graphdiyne

Stimulated by the recent experimental synthesis of a new layered carbon allotrope-graphdiyne film, we provide the first systematic ab initio investigation of the structural and electronic properties of bilayer and trilayer graphdiyne and explore the possibility of tuning the energy gap via a homogeneous perpendicular electric field. Our results show that the most stable bilayer and trilayer graphdiyne both have their hexagonal carbon rings stacked in a Bernal way (AB and ABA style configuration, respectively). Bilayer graphdiyne with the most and the second most stable stacking arrangements have direct bandgaps of 0.35 eV and 0.14 eV, respectively; trilayer graphdiyne with stable stacking styles have bandgaps of 0.18-0.33 eV. The bandgaps of the semiconducting bilayer and trilayer graphdiyne generally decrease with increasing external vertical electric field, irrespective of the stacking style. Therefore, the possibility of tuning the electronic structure and optical absorption of bilayer and trilayer graphdiyne with an external electric field is suggested.     

Controlled synthesis of bilayer graphene on nickel

ABSTRACT: We report uniform and low-defect synthesis of bilayer graphene on evaporated polycrystalline nickel films. We use atmospheric pressure chemical vapor deposition with ultra-fast substrate cooling after exposure to methane at 1000C. The optimized process parameters i.e. growth-time, annealing profile and flow rates of various gases are reported. By using Raman spectroscopy mapping, the ratio of 2D to G peak intensities (I2D/IG) is in the 0.9-1.6 range over 96 percent of 200umx200um area. Moreover, the average ratio of D to G peak intensities (ID/IG) is about 0.1.     

Cone-like graphene nanostructures: electronic and optical properties

A theoretical study of electronic and optical properties of graphene nanodisks and nanocones is presented within the framework of a tight-binding scheme. The electronic densities of states and absorption coefficients are calculated for such structures with different sizes and topologies. A discrete position approximation is used to describe the electronic states taking into account the effect of the overlap integral to first order. For small finite systems, both total and local densities of states depend sensitively on the number of atoms and characteristic geometry of the structures. Results for the local densities of charge reveal a finite charge distribution around some atoms at the apices and borders of the cone structures. For structures with more than 5,000 atoms, the contribution to the total density of states near the Fermi level essentially comes from states localized at the edges. For other energies, the average density of states exhibits similar features to the case of a graphene lattice. Results for the absorption spectra of nanocones show a peculiar dependence on the photon polarization in the infrared range for all investigated structures.     

The effects of graphene on the properties of acrylic pressure-sensitive adhesive

Graphene was examined as a conductive filler to reduce the surface resistivity of an acrylic pressure-sensitive adhesive (PSA). The graphene effectively reduced the surface resistivity; however it also reduced the peel strength of the PSA. This peel strength reduction could be minimized when the graphene was not mixed homogeneously but embedded in the PSA as a separate layer. In addition, the surface resistivity was reduced much more effectively. Typically, the surface resistivity reduced to one-millionth, when 1 part of graphene was imbedded as a separate layer in 100 parts of PSA, compared to that of homogeneously dispersed composite.     

Influence of chemisorption on the thermal conductivity of graphene nanoribbons

The thermal conductivity of graphene nanoribbons (GNRs) functionalized by the chemical attachment of methyl and phenyl groups at random positions is calculated using reverse nonequilibrium molecular dynamics. The GNRs exhibit a rapid drop in thermal conductivity with increasing degree of functionalization; a functional group coverage regime of as little as 1.25% of GNR atoms reduces the thermal conductivity by about 50%. The thermal conductivity of nanoribbons with zigzag edges is more sensitive in the degree of functionalization than nanoribbons with armchair edges. The simulation results indicate that the rapid drop in thermal conductivity is a consequence of the higher angular momentum of functional groups, which rotate the unsupported sp³ bonds and thus reduce the phonon mean free paths.     

Alignment of graphene nanoribbons by an electric field

In this paper, we develop an analytical approach to predict the field-induced alignment of cantilevered graphene nanoribbons. This approach is validated through molecular simulations using a constitutive atomic electrostatic model. Our results reveal that graphene’s field-oriented bending angle is roughly proportional to the square of field strength or to the graphene length for small deformations, while is roughly independent of graphene width. The effective bending stiffness and the longitudinal polarizability are found to be approximately proportional to the square of graphene length. Compared with carbon nanotubes, graphene nanoribbons are found to be more mechanically sensitive to an external electric field.     

Structure-mediated thermal transport of monolayer graphene allotropes nanoribbons

We report the study of the thermal transport management of monolayer graphene allotrope nanoribbons (size ∼20 × 4 nm²) by the modulation of their structures via molecular dynamics simulations. The thermal conductivity of graphyne (GY)-like geometries is observed to decrease monotonously with increasing number of acetylenic linkages between adjacent hexagons. Strikingly, by incorporating those GY or GY-like structures, the thermal performance of graphene can be effectively engineered. The resulting hetero-junctions possess a sharp local temperature jump at the interface, and show a much lower effective thermal conductivity due to the enhanced phonon–phonon scattering. More importantly, by controlling the percentage, type and distribution pattern of the GY or GY-like structures, the hetero-junctions are found to exhibit tunable thermal transport properties (including the effective thermal conductivity, interfacial thermal resistance and rectification). This study provides a heuristic guideline to manipulate the thermal properties of 2D carbon networks, ideal for application in thermoelectric devices with strongly suppressed thermal conductivity.     

Evolution of graphene nanoribbons under low-voltage electron irradiation

Though the all-semiconducting nature of ultrathin graphene nanoribbons (GNRs) has been demonstrated in field-effect transistors operated at room temperature with ～10(5) on-off current ratios, the borderline for the potential of GNRs is still untouched. There remains a great challenge in fabricating even thinner GNRs with precise width, known edge configurations and specified crystallographic orientations. Unparalleled to other methods, low-voltage electron irradiation leads to a continuous reduction in width to a sub-nanometer range until the occurrence of structural instability. The underlying mechanisms have been investigated by the molecular dynamics method herein, combined with in situ aberration-corrected transmission electron microscopy and density functional theory calculations. The structural evolution reveals that the zigzag edges are dynamically more stable than the chiral ones. Preferential bond breaking induces atomic rings and dangling bonds as the initial defects. The defects grow, combine and reconstruct to complex edge structures. Dynamic recovery is enhanced by thermal activation, especially in cooperation with electron irradiation. Roughness develops under irradiation and reaches a plateau less than 1 nm for all edge configurations after longtime exposure. These features render low-voltage electron irradiation an attractive technique in the fabrication of ultrathin GNRs for exploring the ultimate electronic properties.     

Mechanical properties of bilayer graphene sheets coupled by sp bonding

The mechanical properties, such as the Young’s modulus, the interlayer shear modulus and the ultimate tensile strength, of bilayer graphene sheets (GS) coupled by sp³ bonding are investigated by molecular dynamics simulations. These mechanical properties are found to be sensitive to the presence of sp³ bonds in the bilayer GS. The sp³ bonds exert a strengthening influence on the interlayer shear modulus as well as the load transfer rate, thereby enhancing the stability capacity of GS under axial compression. However, the presence of sp³ bonds also leads to a reduction in the Young’s modulus, ultimate tensile strength and the associated facture strain. The adverse and strengthening effects induced by the sp³ bonds are also strongly dependent of their distributions. Simulation results suggest that a small amount of sp³ bonds can be introduced in GS to improve its load transfer rate and stability substantially at the expense of a marginal deterioration in the Young’s modulus and tensile strength.     

Defect symmetry influence on electronic transport of zigzag nanoribbons

The electronic transport of zigzag-edged graphene nanoribbon (ZGNR) with local Stone-Wales (SW) defects is systematically investigated by first principles calculations. While both symmetric and asymmetric SW defects give rise to complete electron backscattering region, the well-defined parity of the wave functions in symmetric SW defects configuration is preserved. Its signs are changed for the highest-occupied electronic states, leading to the absence of the first conducting plateau. The wave function of asymmetric SW configuration is very similar to that of the pristine GNR, except for the defective regions. Unexpectedly, calculations predict that the asymmetric SW defects are more favorable to electronic transport than the symmetric defects configuration. These distinct transport behaviors are caused by the different couplings between the conducting subbands influenced by wave function alterations around the charge neutrality point.     

Step-templated CVD growth of aligned graphene nanoribbons supported by a single-layer graphene film

We present chemical vapor deposition (CVD) growth of a hybrid structure of aligned graphene nanoribbons (GNRs) supported by a single-layer graphene sheet. The step structure created on the epitaxial Co film is used to segregate arrays of aligned GNRs. Reflecting the highly ordered step structure of the Co catalyst, straight nanoribbons with high aspect ratio (>100) are formed. Analysis suggests that a large-area, single-layer graphene film also grows over the aligned GNRs, making a GNR-graphene hybrid structure. We also demonstrate the isolation of aligned GNRs by oxygen plasma treatment or partial transfer of the hybrid film. These findings on the formation of highly aligned GNRs give new insights into the formation mechanism of graphene and can be applied for more advanced graphene structure for future electronics.     

Investigation of electronic properties of graphene/Si field-effect transistor

We report a high-performance graphene/Si field-effect transistor fabricated via rapid chemical vapor deposition. Oligolayered graphene with a large uniform surface acts as the local gate of the graphene transistors. The scaled transconductance, g_m, of the graphene transistors exceeds 3 mS/μm, and the ratio of the current switch, I_on/I_off, is up to 100. Moreover, the output properties of the graphene transistor show significant current saturation, and the graphene transistor can be modulated using the local graphene gate. These results clearly show that the device is well suited for analog applications.     

Laser-induced unzipping of carbon nanotubes to yield graphene nanoribbons

Irradiation of undoped and doped multi-walled carbon nanotubes by an excimer laser (energy ～200-350 mJ) yields graphene nanoribbons (GNRs). The GNRs so obtained have been characterized by transmission electron microscopy, atomic force microscopy and Raman spectroscopy.