A 0.5-V 8-bit 10-Ms/s Pipelined ADC in 90-nm CMOS

This paper presents a pipelined analog-to-digital converter (ADC) operating from a 0.5-V supply voltage. The ADC uses true low-voltage design techniques that do not require any on-chip supply or clock voltage boosting. The switch OFF leakage in the sampling circuit is suppressed using a cascaded sampling technique. A front-end signal-path sample-and-hold amplifier (SHA) is avoided by using a coarse auxiliary sample and hold (S/H) for the sub-ADC and by synchronizing the sub-ADC and pipeline-stage sampling circuit. A 0.5-V operational transconductance amplifier (OTA) is presented that provides inter-stage amplification with an 8-bit performance for the pipelined ADC operating at 10 Ms/s. The chip was fabricated on a standard 90 nm CMOS technology and measures 1.2 mm times 1.2 mm. The prototype chip has eight identical stages and stage scaling was not used. It consumes 2.4 mW for 10-Ms/s operation. Measured peak SNDR is 48.1 dB and peak SFDR is 57.2 dB for a full-scale sinusoidal input. Maximal integral nonlinearity and differential nonlinearity are 1.19 and 0.55 LSB, respectively.     

A CMOS 15-bit 125-MS/s Time-Interleaved ADC With Digital Background Calibration

A 15-bit 125-MS/s two-channel time-interleaved pipelined ADC is fabricated in a 0.18 mum CMOS technology, and achieves 91.9 dB SFDR, 69.9 dB SNDR for a 9.99 MHz input. This ADC incorporates a single sample-and-hold amplifier which employs a precharged circuit configuration to mitigate performance requirements for its opamp. Digital background calibration is applied to maintain the conversion linearity of each A/D channel and also correct both gain and offset mismatches between the two channels. Excluding I/O buffers, the chip occupies an area of 4.3 times 4.3 mm² and dissipates 909 mW from a 1.8 V supply.     

A 1.2-V 250-mW 14-b 100-MS/s Digitally Calibrated Pipeline ADC in 90-nm CMOS

This paper describes a digitally calibrated pipeline analog-to-digital converter (ADC) implemented in 90 nm CMOS technology with a 1.2 V supply voltage. A digital background calibration algorithm reduces the linearity requirements in the first stage of the pipeline chain. Range scaling in the first pipeline stage enables a maximal 1.6$ {rm V}_{rm pp}$ input signal swing, and a charge-reset switch eliminates ISI-induced distortion. The 14b ADC achieves 73 $~$dB SNR and 90 dB SFDR at 100 MS/s sampling rate and 250$~$mW power consumption. The 73 dB SNDR performance is maintained within 3 dB up to a Nyquist input frequency and the FOM is 0.68 $~$pJ per conversion-step.      

一款14位250MS/s采样率的电流舵数模转换器

A 14-bit 250-MS/s current-steering digital-to-analog converter(DAC) was fabricated in a 0.13μm CMOS process.In conventional high-speed current-steering DACs,the spurious-free dynamic range(SFDR) is limited by nonlinear distortions in the code-dependent switching glitches.In this paper,the bottleneck is mitigated by the time-relaxed interleaving digital-random-return-to-zero(TRI-DRRZ).Under 250-MS/s sampling rate,the measured SFDR is 86.2 dB at 5.5-MHz signal frequency and 77.8 dB up to 122 MHz.The DAC occupies an active area of 1.58 mm2 and consumes 226 mW from a mixed power supply of 1.2/2.5 V.     

一种有效位为11.3比特的14位100兆CMOS流水线型模数转换器

This paper demonstrates a 14-bit 100-MS/s pipelined analog-to-digital converter(ADC) in 0.18μm CMOS process with a 1.8 V supply voltage.A fast foreground digital calibration mechanism is employed to correct capacitor mismatches.The ADC implements an SHA-less 3-bit front-end to reduce the size of the sampled capacitor. The presented ADC achieves a 70.02 dB signal-to-noise distortion ratio(SNDR) and an 87.5 dB spurious-free dynamic range(SFDR) with a 30.7 MHz input signal,while maintaining over 66 dB SNDR and 76 dB SFDR up to 200 MHz input.The power consumption is 543 mW and a total die area of 3 x 4 mm2 is occupied.     

500-MS/s 5-bit ADC in 65-nm CMOS With Split Capacitor Array DAC

A 500-MS/s 5-bit ADC for UWB applications has been fabricated in a 65-nm CMOS technology using no analog-specific processing options. The time-interleaved successive approximation register (SAR) architecture has been chosen due to its simplicity versus flash and its amenability to scaled technologies versus pipelined, which relies on operational amplifiers. Six time-interleaved channels are used, sharing a single clock operating at the composite sampling rate. Each channel has a split capacitor array that reduces switching energy, increases speed, and has similar INL and decreased DNL, as compared to a conventional binary-weighted array. A variable delay line adjusts the instant of latch strobing to reduce preamplifier currents. The ADC achieves Nyquist performance, with an SNDR of 27.8 and 26.1 dB for 3.3and 239 MHz inputs, respectively. The total active area is 0.9mm², and the ADC consumes 6 mW from a 1.2-V supply     

1-V电源65nm GP CMOS工艺下一款十位80MS/s 1.6mW逐次逼近型模数转换器

This paper presents a 10-bit 80-MS/s successive approximation register(SAR) analog-to-digital converter (ADC) suitable for integration in a system on a chip(SoC).By using the top-plate-sample switching scheme and a split capacitive array structure,the total capacitance is dramatically reduced which leads to low power and high speed.Since the split structure makes the capacitive array highly sensitive to parasitic capacitance,a three-row layout method is applied to the layout design.To overcome the charge leakage in the nanometer process,a special input stage is proposed in the comparator.As 80 MS/s sampling rate for a 10-bit SAR ADC results in around 1 GHz logic control clock,and a tunable clock generator is implemented.The prototype was fabricated in 65 nm 1P9M (one-poly-nine-metal) GP(general purpose) CMOS technology.Measurement results show a peak signal-to-noise and distortion ratio(SINAD) of 48.3 dB and 1.6 mW total power consumption with a figure of merit(FOM) of 94.8 fJ/conversion-step.     

A 1-V 100-MS/s 8-bit CMOS Switched-Opamp Pipelined ADC Using Loading-Free Architecture

A 1-V, 8-bit pipelined ADC is realized using multi-phase switched-opamp (SO) technique. A novel loading-free architecture is proposed to reduce the capacitive loading and to improve the speed in low-voltage SO circuits. Employing the proposed loading-free pipelined ADC architecture together with double-sampling technique and a fast-wake-up dual-input-dual-output switchable opamp, the ADC achieves 100-MS/s conversion rate, which to our knowledge is the fastest ADC ever reported at 1-V supply using SO technique, with performance comparable to that of many high-voltage switched-capacitor (SC) ADCs. Implemented in a 0.18-mum CMOS process, the ADC obtains a peak SNR of 45.2 dB, SNDR of 41.5 dB, and SFDR of 52.6 dB. Measured DNL and INL are 0.5 LSB and 1.1 LSB, respectively. The chip dissipates only 30 mW from a 1-V supply     

A 10-bit 205-MS/s 1.0- mm2 90-nm CMOS Pipeline ADC for Flat Panel Display Applications

This paper describes a 10-bit 205-MS/s pipeline analog-to-digital converter (ADC) for flat panel display applications with the techniques to alleviate the design limitations in the deep-submicron CMOS process. The switched source follower combined with a resistor-switch ladder eliminates the sampling switches and achieves high linearity for a large single-ended input signal. Multistage amplifiers adopting the complementary common-source topology increase the output swing range with lower transconductance variation and reduce the power consumption. The supply voltage for the analog blocks is provided by the low drop-out regulator for a high power-supply rejection ratio (PSRR) under the noisy operation environment. The pipeline stages of the ADC are optimized in the aspect of power consumption through the iterated calculation of the sampling capacitance and transconductance. The ADC occupies an active area of 1.0 mm² in a 90-nm CMOS process and achieves a 53-dB PSRR for a 100-MHz noise tone with the regulator and a 55.2-dB signal-to-noise-and-distortion ratio for a 30-MHz 1.0-V_PP single-ended input at 205 MS/s. The ADC core dissipates 40 mW from a 1.0-V nonregulated supply voltage.     

A 1.5-V, 10-bit, 14.3-MS/s CMOS pipeline analog-to-digitalconverter

A 1.5-V, 10-bit, 14.3-MS/s pipeline analog-to-digital converter was implemented in a 0.6 μm CMOS technology. Emphasis was placed on observing device reliability constraints at low voltage. MOS switches were implemented without low-threshold devices by using a bootstrapping technique that does not subject the devices to large terminal voltages. The converter achieved a peak signal-to-noise-and-distortion ratio of 58.5 dB, maximum differential nonlinearity of 11.5 least significant bit (LSB), maximum integral nonlinearity of 0.7 LSB, and a power consumption of 36 mW     

A Low-Spurious Low-Power 12-bit 160-MS/s DAC in 90-nm CMOS for Baseband Wireless Transmitter

A low-spurious low-power 12-bit 160-MS/s digital to analog converter (DAC) for baseband wireless transmitter is proposed and demonstrated. Degenerated current switches are introduced and benefits of using them are discussed. Mismatch behavior under packaging-induced die stress is also presented. The mobility shift caused by package stress inherited from a thin-die is a dominant source of I/Q mismatch. A 2-channel I/Q DAC core consumes 4 mA with a 1.3/2.6 V dual supply. The 0.13 mm² I/Q DAC core fabricated in 90-nm digital CMOS process with a highly-integrated digital processor achieves 74 dB SFDR, 55 dB SNDR, and -73 dB THD for a 975 kHz sinusoid at 153.6 MS/s sample rate     

A 10-bit 200-MS/s CMOS parallel pipeline A/D converter

This paper describes a 10-bit 200-MS/s CMOS parallel pipeline analog-to-digital (A/D) converter that can sample input frequencies above 200 MHz. The converter utilizes a front-end sample-and-hold (S/H) circuit and four parallel interleaved pipeline component A/D converters followed by a digital offset compensation. By optimizing for power in the architectural level, incorporating extensively parallelism and double-sampling both in the S/H circuit and the component ADCs, a power dissipation of only 280 mW from a 3.0-V supply is achieved. Implemented in a 0.5-μm CMOS process, the circuit occupies an area of 7.4 mm². The converter achieves a differential nonlinearity and integral nonlinearity of ±0.8 LSB and ±0.9 LSB, respectively, while the peak spurious-free-dynamic-range is 55 dB and the total harmonic distortion better than 46 dB at a sampling rate of 200 MS/s     

A 6-bit 3.5-GS/s 0.9-V 98-mW Flash ADC in 90-nm CMOS

A 6-bit 3.5-GS/s flash ADC is reported. A load circuit with a clamp diode and a replica-biasing scheme is developed for low-voltage and high-speed operation. An acceleration capacitor is introduced for high-speed overdrive recovery of a comparator. An averaging and interpolation network is employed in this ADC. The interpolation factor is optimized considering random offset, active area, and systematic offset to realize low offset and small active area. The ADC is fabricated in a 90-nm CMOS process and occupies 0.15 mm². It consumes 98 mW with a 0.9-V power supply. With Nyquist input, SNDR and SFDR at 3.5 GS/s are 31.18 dB and 38.67 dB, respectively.     

基于90nm CMOS工艺的2GS/s 8-bit 折叠插值ADC的设计*

本文基于90nm CMOS工艺设计了一个单通道 2GSPS, 8-bit 折叠插值模数转换器。本设计采用折叠级联结构,通过在折叠电路间增加级间采样保持器的方法增加量化时间。电路中采用了数字前台辅助校正技术以提高信号的线性度。后仿结果表明,在奈奎斯特采样频率,该ADC的微分非线性DNL<±0.3LSB,积分非线性INL<±0.25LSB,有效位数达到7.338比特。包括焊盘在内的整体芯片面积为880×880 μm2。电路在1.2V 电源电压下功耗为210mW.     

A 10-bit 60-MS/s Low-Power CMOS Pipelined Analog-to-Digital Converter

A 10-bit 60-MS/s low-power CMOS pipelined analog-to-digital converter (ADC) is proposed. At the front-end, a timing-skew-insensitive double-sampled Miller-capacitance-based sample-and-hold circuit is employed to enhance the dynamic performance of the pipelined ADC. Bootstrapped switch achieves rail-to-rail signal swing at low-voltage power supply. Employing double sampling and bias current scaling techniques, very competitive power consumption can be achieved. The prototype chips have been fabricated and experimental results confirm the feasibility of this new technique.     

一种SFDR为83.5dB的14位100兆流水线模数转换器

This paper demonstrates a 14-bit 100 MS/s CMOS pipelined analog-to-digital converter （ADC）. The nonlinearity model for bootstrapped switches is established to optimize the design parameters of bootstrapped switches, and the calculations based on this model agree well with the measurement results. In order to achieve high linearity, a gradient-mismatch cancelling technique is proposed, which eliminates the first order gradient error of sampling capacitors by combining arrangement of reference control signals and capacitor layout. Fabricated in a 0.18-μm CMOS technology, this ADC occupies 10.16-mm2 area. With statistics-based background calibration of finite opamp gain in the first stage, the ADC achieves 83.5-dB spurious free dynamic range and 63.7-dB signalto-noise-and distortion ratio respectively, and consumes 393 mW power with a supply voltage of 2 V.     

An 8-bit 800-$muhboxW$1.23-MS/s Successive Approximation ADC in SOI CMOS

We report on an 8-bit successive approximation analog-to-digital converter (SA-ADC) that was designed and fabricated in 0.5-$muhboxm$silicon on sapphire CMOS technology. The SA-ADC is capable of 32-MHz operation, providing 1.23-MS/s conversion rates, and consumes 800$muhboxW$at 3.3-V supply. The lack of substrate parasitic capacitances enables the use of small-area capacitors and reduces the noise coupling to the analog nodes. The circuits employ MOS transistors of different thresholds to optimize the performance and power dissipation of the system.     

A 1.2?V 10-bit 60-MS/s 23?mW CMOS pipeline ADC with 0.67?pJ/conversion-step and on-chip reference voltages generator

A 1.2?V 10-bit 60?MS/s pipeline Analog-to-Digital Converter (ADC), fabricated in a 130?nm CMOS technology, is presented. The prototype is composed by five 3-bit pipeline stages and a Sample and Hold (S&H) circuit at the front. Two-stage Miller-compensated Operational Transconductance Amplifiers (OTAs), offset-compensated comparators and bootstrapping sampling switches have been used due to the low voltage supply requirements. Special attention has been paid to the reduction of the power consumption using a thorough design methodology. The converter only consumes 23?mW including on-chip reference voltages and bias current generators. The differential and integral nonlinearity of the ADC are below 0.60 and 0.61 LSBs, respectively. The pipeline converter achieves an effective resolution above 9 bits along the Nyquist bandwidth, and obtains 0.67?pJ energy consumption per conversion, making it one of the most energy-efficient 10-bit video-rate pipeline ADC reported to date.     

A 14-b 12-MS/s CMOS pipeline ADC with over 100-dB SFDR

A 1.8-V 14-b 12-MS/s pseudo-differential pipeline analog-to-digital converter (ADC) using a passive capacitor error-averaging technique and a nested CMOS gain-boosting technique is described. The converter is optimized for low-voltage low-power applications by applying an optimum stage-scaling algorithm at the architectural level and an opamp and comparator sharing technique at the circuit level. Prototyped in a 0.18-/spl mu/m 6M-1P CMOS process, this converter achieves a peak signal-to-noise plus distortion ratio (SNDR) of 75.5 dB and a 103-dB spurious-free dynamic range (SFDR) without trimming, calibration, or dithering. With a 1-MHz analog input, the maximum differential nonlinearity is 0.47 LSB and the maximum integral nonlinearity is 0.54 LSB. The large analog bandwidth of the front-end sample-and-hold circuit is achieved using bootstrapped thin-oxide transistors as switches, resulting in an SFDR of 97 dB when a 40-MHz full-scale input is digitized. The ADC occupies an active area of 10 mm/sup 2/ and dissipates 98 mW.     

Highly Interleaved 5-bit, 250-MSample/s, 1.2-mW ADC With Redundant Channels in 65-nm CMOS

This successive approximation register ADC uses time-interleaving to gain the energy advantage of slower circuits (reduced supply voltage and improved bias points) without sacrificing high speed operation. The drawbacks of interleaving are addressed through architectural solutions. Channel redundancy counteracts the severe yield loss that parallel circuits experience due to local variation. Clock partitioning restricts the distribution of the precise, high-speed sampling clock to three centrally located sampling networks. Only a low frequency clock is distributed across the majority of die area. The skew-resistant global top-plate sampling network is extended to allow overlapped sampling windows without introducing extra sources of crosstalk. The 36-way interleaved 5-bit ADC operates with a core voltage of 800 mV and consumes 1.20 mW total power at 250 MS/s. At Nyquist, the SNDR is 28.4 dB. The 6 redundant channels (17% overhead) increase the yield of the 24 measured chips from 42% to 88%.