Synthesis of Silicon Carbide–Silicon Nitride Composite Ultrafine Particles Using a Carbon Dioxide Laser

The synthesis and the structure of silicon carbide-silicon nitride (SiC─Si₃N₄) composite ultrafine particles have been studied. SiC─Si₃N₄ composite ultrafine particles were prepared by irradiating a SiH₄, C₂H₄, and NH₃ gas mixture with a CO₂ laser at atmospheric pressure. The composition of composite powders changed with the reactant gas flow rate. The carbon and nitrogen content of the powder could be controlled in a wide range from 0 to 30 wt%. The composite powder, which contained 25.3 wt%. carbon and 5.8 wt% nitrogen, had a (β-SiC structure. As the nitrogen con- tent increased, SiC decreased and amorphous phase, Si₃N₄, Si appeared. The results of XPS and lattice constant measurements suggested that Si, C, and N atoms were intimately mixed in the composite particles.     

Thermogravimetry, Differential Thermal Analysis, and Mass Spectrometry Study of the Silicon Nitride–Boron Carbide–Carbon Reaction System for the Synthesis of Silicon Carbide–Boron Nitride Composites

Thermogravimetry, differential thermal analysis, mass spectrometry, and X-ray diffractometry were used to study the reaction process of the in situ reaction between Si₃N₄, B₄C, and carbon for the synthesis of silicon carbide–boron nitride composites. Atmospheres with a low partial pressure of nitrogen (for example argon + 5%–10% nitrogen) seemed to inhibit denitrification and also maintain a high reaction rate. However, the reaction rate decreased significantly in a pure nitrogen atmosphere. The experimental mass spectrometry results also revealed that B₄C in the Si₃N₄–B₄C–C system inhibited the reaction between Si₃N₄ and carbon and, even, the decomposition of Si₃N₄. The present results indicate that boron could be a composition stabilizer for ceramic materials in the Si-N-C system used at high temperature.     

Controlled Crystallization of Amorphous Si3N4by Ti and CI Additives

Thin films of amorphous Si₃N₄ were prepared by the rf-sputtering method, and the effects of titanium and chlorine additives on its crystallization were examined. When Ti-doped amorphous Si₃N₄ was heated, TiN precipitated at >1100°C; the TiN precipitates promoted the conversion of amorphous Si₃N₄ to β-Si₃N₄. Chlorine led to preferential conversion of amorphous Si₃N₄ to α-Si₃N₄.     

Effect of Nitrate Salts as Sintering Additives during the Ball-Milling Process of Silicon Nitride Powders

A chemical adsorption method in a Si₃N₄ slurry that contained a nitrate solution was studied during ball milling, with particular interest in increasing the oxide layer in the Si₃N₄ powder and improving the distribution homogeneity of the sintering additives. The nitrate salts Al(NO₃)₃·9H₂O and Y(NO₃)₃·6H₂O were selected as sintering additives. The following characterization techniques were used: oxygen–nitrogen analysis, X-ray photoelectron spectroscopy, high-resolution electron microscopy (coupled with energy-dispersive X-ray spectroscopy), and X-ray imaging (using wavelength-dispersive X-ray spectroscopy). The thickness of the amorphous layer and the oxygen content of the Si₃N₄ powder were greater for samples that were milled with nitrate additives, which were heat-treated at 600°C, than those of powders that were milled with oxide additives. The chemical composition of the oxygen-containing layer—that is, the amorphous layer that formed and/or changed on the Si₃N₄ surface—was similar to Si₂N₂O in heat-treated Si₃N₄ powder with nitrate additives, whereas the composition of heat-treated Si₃N₄ powder with oxide additives was similar to SiO₂. Furthermore, a homogeneous distribution of the additives was achieved via the incorporation of aluminum and yttrium into the amorphous layer on the Si₃N₄ surface. The metal ratio (Y:Al) of the adsorbates was somewhat higher than that of the additives.     

Reaction and Formation of Crystalline Silicon Oxynitride in Si–O–N Systems under Solid High Pressure

Oxidized amorphous Si₃N₄ and SiO₂ powders were pressed alone or as a mixture under high pressure (1.0–5.0 GPa) at high temperatures (800–1700°C). Formation of crystalline silicon oxynitride (Si₂ON₂) was observed from amorphous silicon nitride (Si₃N₄) powders containing 5.8 wt% oxygen at 1.0 GPa and 1400°C. The Si₂ON₂ coexisted with β-Si₃N₄ with a weight fraction of 40 wt%, suggesting that all oxygen in the powders participated in the reaction to form Si₂ON₂. Pressing a mixture of amorphous Si₃N₄ of lower oxygen (1.5 wt%) and SiO₂ under 1.0–5.0 GPa between 1000° and 1350°C did not give Si₂ON₂ phase, but yielded a mixture of α,β-Si₃N₄, quartz, and coesite (a high-pressure form of SiO₂). The formation of Si₂ON₂ from oxidized amorphous Si₃N₄ seemed to be assisted by formation of a Si–O–N melt in the system that was enhanced under the high pressure.     

Synthesis and Characterization of Amorphous Si2N2O

Amorphous silicon oxynitride powder was synthesized by nitridation of high-purity silica in ammonia at 1120°C. The resulting material was X-ray amorphous, and its chemical characteristics were determined by X-ray photoelectron spectroscopy (XPS) and ²⁹Si nuclear magnetic resonance (NMR). The XPS analysis showed a shift to lower binding energies for the Si₂ p peak with increasing nitrogen content. Upon initial nitridation, the full width at half maximum (FWHM) of the Si₂ p peak increased, but decreased again at higher nitrogen contents, thus showing the formation of a silicon oxynitride phase with a single or small range of composition. The ²⁹Si NMR analysis showed the formation of (amorphous) Si₃N₄ (Si–N₄) and possibly two oxynitride phases (Si–N₃O, Si–N₂O₂). It is concluded that while XPS, FT-IR, and nitrogen analysis may show the formation of an homogeneous, amorphous silicon oxynitride (Si₂N₂O) phase, the formation of phase–pure, amorphous Si₂N₂O is extremely difficult via this route.     

Carbothermic Synthesis of Monodispersed Spherical Si3N4/SiC Nanocomposite Powder

The synthesis and structure of a monodispersed spherical Si₃N₄/SiC nanocomposite powder have been studied. The Si₃N₄/SiC nanocomposite powder was synthesized by heating under argon a spherical Si₃N₄/C powder. The spherical Si₃N₄/C powder was prepared by heating a spherical organosilica powder in a nitrogen atmosphere and was composed of a mixture of nanosized Si₃N₄ and free carbon particles. During the heat treatment at 1450°C, the Si₃N₄/C powder became a Si₃N₄/SiC composite powder and finally a SiC powder after 8 h, while retaining its spherical shape. The composition of the Si₃N₄/SiC composite powder changed with the duration of the heat treatment. The results of TEM, SEM, and selected area electron diffraction showed that the Si₃N₄/SiC composite powder was composed of homogeneously distributed nanosized Si₃N₄ and SiC particles.     

Densification and Mechanical Properties of Titanium Diboride with Silicon Nitride as a Sintering Aid

Titanium diboride (TiB₂) was hot-pressed at a temperature of 1800°C, and silicon nitride (Si₃N₄) was added as a sintering aid. The amount of Si₃N₄ that was added had a significant influence on the sinterability and mechanical properties of the TiB₂. When a small amount (2.5 wt%) of Si₃N₄ was added, the Si₃N₄ reacted with titania (TiO₂) that was present on the surface of the TiB₂ powder to form titanium nitride (TiN), boron nitride (BN), and amorphous silica (SiO₂). The elimination of TiO₂ suppressed the grain growth effectively, which led to an improvement in the densification of TiB₂. The formation of SiO₂ also was deemed beneficial for densification. The mechanical properties-especially, the flexural strength-were enhanced remarkably through these improvements in the sinterability and microstructure. On the other hand, when a large amount (greaterthan equal to5 wt%) of Si₃N₄ was added, the mechanical properties were not improved much, presumably because of the extensive formation of a glassy Si-Ti-O-N phase at the grain boundaries.     

Solubility of Si3N4 in Liquid SiO2

The nitrogen solubility in the SiO₂-rich liquid in the metastable binary SiO₂-Si₃N₄ system has been determined by analytical TEM to be 1%–4% of N/(O + N) at 1973–2223 K. Analysis of the near edge structure of the electron energy loss peak indicates that nitrogen is incorporated into the silicate network rather than being present as molecular N₂. A regular solution model with a positive enthalpy of mixing for the liquid was used to match the data for the metastable solubility of N in the presence of crystalline Si₃N₄ and to adjust the computed phase diagram. The solubility of Si₃N₄ in fused SiO₂ is far less than reported in liquid silicates also containing Al, Mg, and/or Y. Apparently, these cations act as modifiers that break anion bridges in the silicate network and, thereby, allow further incorporation of Si₃N₄ without prohibitive amounts of network cross-linking. Finally, indications emerged regarding the diffuse nature of the Si₃N₄-SiO₂ interface that leads to amorphous regions of higher N content.     

Variation of Width and Composition of Grain-Boundary Film in a High-Purity Silicon Nitride with Minimal Silica

Contrary to the widely accepted observation that grain-boundary amorphous films for a given Si₃N₄ composition have common (equilibrium) widths and compositions, a significant variation for both parameters from film to film was observed in an undoped high-purity Si₃N₄ prepared using a hot isostatic pressing method. This material previously has been reported to have an equilibrium film width of 0.6 nm, as measured using a high-resolution electron microscopy (HREM) method; this value is significantly different from that which is typical for other high-purity Si₃N₄ ceramics (1.0 nm). A total of four boundaries were analyzed, using spatially resolved electron energy-loss spectroscopy methods, which can give the chemical width and composition for the film. Widths of these grain-boundary films were substantially different from each other; only the thinnest matches the previous HREM observations. The nitrogen content in the film decreased concurrently as the film thickened. This material had many cavities and complicated configurations at triple pockets, because of the very low total-SiO₂ content (0.55 vol%). They created locally different equilibrium conditions for grain-boundary films, in comparison with other fully densified Si₃N₄, causing such strong variation in both film structure and chemistry. This observation reveals the importance of triple pockets in equilibrium film structures, providing new insight in evaluating the absorption and wetting models. The thinnest film may correspond to the amorphous structure that is required to bind two randomly oriented Si₃N₄ grains under greater local stress.     

Oxidation of CVD Si3N4 at 1550° to 1650°C

A thermo gravimetric study of the oxidation behavior of chemically vapor-deposited amorphous and crystalline Si₃N₄ (CVD Si₃N₄) was made in dry oxygen (0.1 MPa) at 1550° to 1650°C. The specimens were prepared under various deposition conditions using a mixture of SiCl₄, NH₃, and H₂ gases. The crystalline CVD Si₃N₄ indicated a parabolic oxidation kinetics over the whole temperature range, whereas the amorphous CVD Si₃N₄ changed from a parabolic to a linear law with increased temperature. The oxidation mechanism is discussed in terms of the activation energy for the oxidation and the microstructure of the formed oxide films.     

Role of Nitrogen in the Crystallization of Silicon Nitride-Doped Chalcogenide Glasses

Glasses in the Ge-S, Ge-As-Se, and Ge-As-Se-Te systems, doped with Si₃N₄, were melted after sealing under reduced pressure, and their crystallization behavior was examined using differential thermal analysis/differential scanning calorimetry and X-ray diffractometry. The effect of Si₃N₄ doping on the suppression of the crystallization of chalcogenide glasses was confirmed for all three systems and is attributed to the increased crosslinking upon substitution of the chalcogens by nitrogen atoms, presumably forming structural units that are similar to Ge₃N₄.     

Atomistic Structure of Silicon Nitride/Silicate Glass Interfaces

The structure of interfaces formed by a Si₃N₄ grain and the silica-rich intergranular amorphous phase was investigated by quantitative high-resolution transmission electron microscopy (QHRTEM). It was found that the contrast and periodicity of the HRTEM image of β-Si₃N₄ strongly depend on the specimen thickness and objective lens focus value. The different thinning rate between Si₃N₄ and the glass phase during ion-milling results in gradients of the specimen thickness at the interfaces. The interface roughness can also lead to a thickness variation of Si₃N₄ near the interface parallel to the electron beam. As a result, the HRTEM micrographs, taken from the thin specimen regions near the interfaces at a certain defocus value, show the occurrence of an artifact of an ordered structure seemingly different from Si₃N₄. The present investigations, however, showed that no ordered phase actually different from that of Si₃N₄ at the interfacial region in Si₃N₄ could be identified so far. The interfacial structure is likely direct Si₃N₄/glass bonding, rather than an ordered transition phase between the Si₃N₄ and the glass phase.     

Relationship between the Average Coordination Number and Properties of Chalconitride Glasses

Chalconitride glasses obtained by doping Ge-As-Se and Ge-S chalcogenide glass systems with Si₃N₄ (0.35 and 0.50 wt%) have been studied; these glasses have been doped with Si₃N₄ to improve their thermal and mechanical prop-erties. The glasses have been melted under vacuum in sealed silica ampoules, quenched in air, and subsequently annealed. Measured properties include the transition temperature ( T _g), microhardness ( H _v), and thermal expansion coefficient (α). The effect of Si₃N₄ doping is system depen-dent. The concept of average coordination number () is used to explain this dependence. For the glasses in the chal-cogen-rich region, a greater increase in thermal and mechanical properties with Si₃N₄ doping is assigned to the fact that both the introduction of silicon and the substitution of nitrogen for chalcogens enhance the degree of crosslinking within the substructures. However, for the glasses in the chalcogen-deficient region, extra silicon atoms that are in-troduced with Si₃N₄ doping are not helpful in further crosslinking the network, because of the deficiency in the bridging chalcogens. A slight increase in T _g with increasing , in the case of chalcogen deficiency, might result from the "wrong-bond effect," which provides some additional crosslinking in connections of the networked island sub-structural units.     

Design, Fabrication, and Characterization of Silicon Nitride Particle-Reinforced Silicon Nitride Matrix Composites by Chemical Vapor Infiltration

Silicon nitride particle-reinforced silicon nitride matrix composites were fabricated by chemical vapor infiltration (CVI). The particle preforms with a bimodal pore size distribution were favorable for the subsequent CVI process, which included intraagglomerate pores (0.1–4 μm) and interagglomerate pores (20–300 μm). X-ray fluorescence results showed that the main elements of the composites are Si, N, and O. The composite is composed of α-Si₃N₄, amorphous Si₃N₄, amorphous SiO₂, and a small amount of β-Si₃N₄ and free silicon. The α-Si₃N₄ transformed into β-Si₃N₄ after heat treatment at 1600°C for 2 h. The flexural strength, dielectric constant, and dielectric loss of the Si₃N_4(p)/Si₃N₄ composites increased with increasing infiltration time; however, the pore ratios decreased with increasing infiltration time. The maximum value of the flexural strength was 114.07 MPa. The dielectric constant and dielectric loss of the composites were 4.47 and 4.25 × 10⁻³, respectively. The present Si₃N_4(p)/Si₃N₄ composite is a good candidate for high-temperature radomes.     

Stability of Silicon Carbonitride Phases

Important hard phases are included in the quaternary compositional system Si-N-C-B. This paper reviews ternary amorphous and crystalline phases in the system Si-N-C and deliberates on the issue of stability of the binary C₃N₄, a hypothetical phase harder than diamond, and instability of nitrides in general. There is a tendency for nitrogen atoms to agglomerate and be released as nitrogen molecules. Stabilization of CN radicals can be achieved through ternary phases: carbonitrides metal-C-N. Ternary Si-N-C phases have been synthesized by pyrolysis of polyorganosilazanes, physical vapor deposition, and chemical vapor deposition. The crystalline α-Si₃N₄:C phase can incorporate about 6 at.% C and yields enhancement of hardness and wear resistance. Other crystalline phases contain more carbon, for example, Si₂CN₄.     

High-Temperature Failure Mechanisms of Hot-Pressed Si3N4 and Si3N4/Si3N4-Whisker-Reinforced Composites

The high-temperature flexural strength of hot-pressed silicon nitride (Si₃N₄) and Si₃N₄-whisker-reinforced Si₃N₄-matrix composites has been measured at a crosshead speed of 1.27 mm/min and temperatures up to 1400°C in a nitrogen atmosphere. Load–displacement curves for whisker-reinforced composites showed nonelastic fracture behavior at 1400°C. In contrast, such behavior was not observed for monolithic Si₃N₄. Microstructures of both materials have been examined by scanning and transmission electron microscopy. The results indicate that grain-boundary sliding could be responsible for strength degradation in both monolithic Si₃N₄ and its whisker composites. The origin of the nonelastic failure behavior of Si₃N₄-whisker composite at 1400°C was not positively identified but several possibilities are discussed.     

Silicon Nitride Based Ceramic Nanocomposites

Nanocomposites (Si₃N₄/SiC) were studied by combined high-resolution transmission electron microscopy and electron energy-loss spectroscopic imaging (ESI) techniques. In ESI micrographs three types of crystalline grains were distinguished: Si₃N₄ matrix grains (0.5 μΩ), nanosized SiC particles (<100 nm) embedded in the Si₃N₄, and large SiC particles (100–200 nm) at grain boundary regions (intergranular particles). Amorphous films were found both at Si₃N₄ grain boundaries and at phase boundaries between Si₃N₄ and SiC. The Si₃N₄ grain boundary film thickness varied from 1 to 2. 5 nm. Two kinds of embedded SiC particles were observed: type A has a special orientation with respect to the matrix, and type B possesses a random orientation with respect to the matrix. The surfaces of type B particles are completely covered by an amorphous phase. The existence of the amorphous film between the matrix and the particles of type A depends on the lattice mismatch across the interface. The mechanisms of nucleation and growth of Ω-Si₃N₄ grains are discussed on the basis of these experimental results.     

Surface Modification of Silicon Nitride Powder with Aluminum

Surface modification of Si₃N₄ with alumina was tried. It was achieved by simply mixing Si₃N₄ powder with an alumina sol up to ∼2 wt% as alumina in an aqueous medium, dried, and followed by calcination at 400°C for 1 h. A TEM micrograph showed a coating layer of ∼15 nm thickness. The isoelectric point of the modified Si₃N₄ powder with porous alumina was at pH 7.8, which is different from 5.8 and 8.6 for Si₃N₄ and amorphous alumina, respectively.     

Grain-Boundary Microstructure and Chemistry of a Hot Isostatically Pressed High-Purity Silicon Nitride

Two high-purity Si₃N₄ materials were fabricated by hot isostatic pressing without the presence of sintering additives, using an amorphous laser-derived Si₃N₄ powder with different oxygen contents. High-resolution transmission electron microscopy and electron energy-loss spectroscopy (EELS) analysis of the Si₃N₄ materials showed the presence of an amorphous SiO₂ grain-boundary phase in the three-grain junctions. Spatially resolved EELS analysis indicated the presence of a chemistry similar to silicon oxynitride at the two-grain junctions, which may be due to partial dissolution of nitrogen in the grain-boundary film. The chemical composition of the grain-boundary film was SiN_xO_y, (x ∼ 0.53 and y ∼ 1.23), and the triple pocket corresponded to the amorphous SiO₂ containing ∼2 wt% nitrogen. The equilibrium grain-boundary-film thickness was measured and found to be smaller for the material with the lower oxygen content. This difference in thickness has been explained by the presence of the relatively larger calcium concentration in the material with the lower amount of SiO₂ grain-boundary phase, because the concentration of foreign ions has been shown to affect the grain-boundary thickness.