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研究了有机薄膜晶体管器件.器件是以热生长的SiO2作为有机薄膜晶体管的栅绝缘层,酞菁铜作为有源层的.实验表明采用一种硅烷耦合剂-十八烷基三氯硅烷(OTS)修饰SiO2可以有效地降低栅绝缘层的表面能从而明显提高了器件的性能.器件的场效应迁移率提高了2.5倍、阈值电压降低了3 V、开关电流比从103增加到104.同时我们采用MoO3修饰铝作为器件的源漏电极,形成MoO3/Al双层电极结构.实验表明在同样的栅极电压下,具有MoO3/Al 电极的器件和金电极的器件有着相似的源漏输出电流Ids.结果显示具有OTS/SiO2双绝缘层的及MoO3/Al 电极结构的器件能有效改进有机薄膜晶体管的性能. 相似文献
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采用MoO3作为阳极缓冲层,制备了结构为ITO/MoO3/P3HT/C60/Bphen/Ag的有机太阳能电池器件,研究了MoO3薄膜厚度对器件性能的影响。采用常用的等效电路模型,仿真计算得到MoO3缓冲层对器件串联电阻的影响。此外,测试了器件的吸收光谱,研究了MoO3缓冲层对器件光子吸收的作用。结果表明,在MoO3厚度为1 nm时,器件的短路电流密度、开路电压和填充因子都得到了提高。MoO3可以改善电极和有机层的界面接触性能,能够有效降低器件的串联电阻,提高载流子的传输和收集效率;同时,MoO3缓冲层透过率高,不会对器件的光吸收效率造成影响。 相似文献
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制备了一种采用多层氧化物复合阴极的透明OLED,器件结构为:ITO/MoO3(10nm)/NPB(60nm)/Alq3(65nm)/Al(1nm)/MoO3(1nm)/Al(Xnm)/MoO3(30nm)。所采用的复合阴极结构为MoO3/Al/MoO3(MAM),同时在复合阴极(MAM)与电子传输层(Alq3)中间插入一层厚度为1nm的Al中间层,该薄Al层一方面提高了电极与有机层间界面的平整度,同时增强了电极的导电性;另一方面,在电子传输层与中间层Al薄膜之间形成了良好的欧姆接触,提高了电子的注入能力。改变MAM结构中Al的厚度,获得该透明OLEDs的最佳性能,在Al的厚度为18nm时器件亮度最高,为2 297cd/cm2。 相似文献
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基于半导体仿真软件Silvaco TCAD对薄膜晶体管(TFT)进行器件仿真,并结合实验验证,重点分析不同绝缘层材料及结构对TFT器件性能的影响。仿真及实验所用薄膜晶体管为底栅电极结构,沟道层采用非晶IGZO材料,绝缘层采用SiN_x和HfO_2多种不同组合的叠层结构。仿真及实验结果表明:含有高k材料的栅绝缘层叠层结构较单一SiN_x绝缘层结构的TFT性能更优;对SiN_x/HfO_2/SiN_x栅绝缘层叠层结构TFT,HfO_2取40nm较为合适;对含有高k材料的3层和5层绝缘层叠层结构TFT,各叠层厚度相同的对称结构TFT性能最优。本文通过仿真获得了TFT性能较优的器件结构参数,对实际制备TFT器件具有指导作用。 相似文献
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研究了磁控溅射法制备的复合绝缘层结构的有机薄膜晶体管.该器件是以酞菁铜(CuPc)作为有源层,SiO2/Si3N4/SiO2复合绝缘层和单层SiO2为绝缘层来进行对比研究的.结果显示与单层SiO2绝缘层的器件相比,具有复合绝缘层的器件结构能有效改进有机薄膜晶体管的性能.同时发现,不同厚度的SiO2/Si3N4/SiO2复合绝缘层对晶体管的性能也有影响,绝缘层太厚,感应电流小;绝缘层太薄,器件容易被击穿. 相似文献
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Salme Jussila Maria Puustinen Tomi Hassinen Juuso Olkkonen Henrik G.O. Sandberg Kimmo Solehmainen 《Organic Electronics》2012,13(8):1308-1314
We present a new manufacturing method for the bottom-gate type organic field-effect transistor (OFET) having a self-aligned gate electrode based on conducting poly(aniline). This method utilizes the possibility to turn the insulating emeraldine base (PANI-EB) form of poly(aniline) into the conducting emeraldine salt (PANI-ES) form by using UV exposure and photoacid generator (PAG) material. When the source–drain electrodes are used as the mask layer in the UV exposure step an optimal alignment between the gate electrode and source–drain electrodes can be reached, and the parasitic capacitance of the transistor can be minimized. We anticipate that the proposed concept also simplifies the fabrication of the transistors since no additional processing of the photoresist layers is needed to pattern the gate electrode or the gate insulator layer. 相似文献
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Elias Said Peter Andersson Isak Engquist Xavier Crispin Magnus Berggren 《Organic Electronics》2009,10(6):1195-1199
Monolithic integration of an organic field-effect transistor (OFET) and an organic electrochromic display cell operating at around 1 V is reported. This was achieved by utilising a common patterned layer of poly(styrenesulfonic acid) (PSSH). In the OFET, PSSH served as the electric double layer capacitors between the gate and the organic semiconductor channel. In the electrochromic pixel, PSSH was included as the electrolyte and transports protons from and to the electrochromic layer upon switching. The enhancement mode OFET enables a relatively faster updating speed, of the display cell, and provides a much simpler addressing and updating scheme as compared to smart pixels including a depletion mode electrochemical transistor. 相似文献
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采用液晶E7作为栅介质,聚异靛蓝噻吩乙烯噻吩(PII-TVT)作为半导体,利用光刻/蚀刻技术制备了漏极-源极-栅极(D-S-G)共面的有机场效应晶体管器件,并测试了晶体管性能,对液晶作为栅介质应用于有机场效应晶体管进行研究。实验结果表明,器件表现出比较特别的晶体管性能,开关比达到10~3。通过光学显微镜观察发现,施加栅极电压后液晶发生形变,表明栅极电压对电极上的液晶分子的取向排列有较大影响。在施加脉冲栅压时,沟道电流随着脉冲栅压时间的延长而增强。利用液晶分子在电场下发生极化和迟滞作用,可一定程度上模拟突触的刺激时间依赖性。 相似文献
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Highly Sensitive and Selective Biosensors Based on Organic Transistors Functionalized with Cucurbit[6]uril Derivatives
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Moonjeong Jang Hyoeun Kim Sunri Lee Hyun Woo Kim Jayshree K. Khedkar Young Min Rhee Ilha Hwang Kimoon Kim Joon Hak Oh 《Advanced functional materials》2015,25(30):4882-4888
Biosensors based on a field‐effect transistor platform allow continuous monitoring of biologically active species with high sensitivity due to the amplification capability of detected signals. To date, a large number of sensors for biogenic substances have used high‐cost enzyme immobilization methods. Here, highly sensitive organic field‐effect transistor (OFET)‐based sensors functionalized with synthetic receptors are reported that can selectively detect acetylcholine (ACh+), a critical ion related to the delivery of neural stimulation. A cucurbit[6]uril (CB[6]) derivative, perallyloxyCB[6] ((allyloxy)12CB[6], AOCB[6]), which is soluble in methanol but insoluble in water, has been solution‐deposited as a selective sensing layer onto a water‐stable p‐channel semiconductor, 5,5′‐bis‐(7‐dodecyl‐9H‐fluoren‐2‐yl)‐2,2′‐bithiophene layer. The OFET‐based sensors exhibit a detection limit down to 1 × 10–12 m of ACh+, which is six orders of magnitude lower than that of ion‐selective electrode‐based sensors. Moreover, these OFET‐based sensors show highly selective discrimination of ACh+ over choline (Ch+). The findings demonstrate a viable method for the fabrication of OFET‐based biosensors with high sensitivity and selectivity, and allow for practical applications of OFETs as high‐performance sensors for biogenic substances. 相似文献
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In this work, a new type organic field effect transistor (OFET) based write-once read-many memory (WORM) device was developed. The device uses an ultraviolet (UV) cross-linkable matrix polymer mixed with ionic compounds to form an ion-dispersed gate dielectric layer. Under an applied gate voltage bias, migration of cations and anions in opposite directions forms space charge polarization in the gate dielectric layer, resulting in change of the electrical characteristics. It is shown that, with UV illumination to cross-link the matrix polymer, the formed space charge polarization can be stabilized. Therefore, the OFET can be operated as a WORM with the applied voltage bias to define the polarization and in turn the stored data, and the UV illumination to stabilize the stored data. 相似文献
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In this paper, we used the low and high density porous structure of polymethylmethacrylate (PMMA) film as tunneling dielectric layer in the floating-gate organic field-effect transistor (OFET) memory devices. Compared to the thin/thick nonporous structure of PMMA tunneling layer, the porous structure of PMMA tunneling layer had positive impacts on the device performance of the floating-gate OFET memory devices. Moreover, it was found that the memory performance was also increased as pore density of PMMA film increased. The atomic force microscopy (AFM) results of both porous structure of PMMA film and pentacene film on porous structure of PMMA film revealed that high density porous structure of PMMA tunneling layer can produce larger tunneling area and more electron transfer paths between pentacene film and PMMA film, which resulted in high electron capture and release efficiency of the floating-gate OFET memory devices with porous structure of PMMA tunneling layer. In addition, our porous structure of PMMA tunneling layer as well as nonporous PMMA film has high electrical insulating property due to their semi-hollow structure film, which is favourable to maintain stable retention property. Eventually, the floating-gate OFET memory devices with high density porous structure of PMMA tunneling layer showed good nonvolatile memory properties with a large memory window of about 43 V, a high ON/OFF current ratio of about 104, and stable endurance and retention properties. Our results provided a new strategy to achieve the high performance floating-gate OFET memory devices. 相似文献
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基于聚合物电介质的并五苯场效应晶体管 总被引:1,自引:1,他引:0
采用顶接触结构分别在SiO2、聚甲基丙烯酸甲酯(PMMA)绝缘层上制备了以并五苯为有源层的两种有机场效应晶体管(OFET),其中SiO2绝缘层采用热生长法制备,PMMA绝缘层采用溶液旋涂法制备。与常规基于无机绝缘层的器件相比,采用聚合物为绝缘层后,不但器件的制作工艺简化和成本降低,而且器件性能大幅提高,经测试,器件的迁移率提到0.153cm2/Vs,而阈值电压降低6V。采用原子力显微镜(AFM)、X射线衍射(XRD)等对器件性能提高的原因进行了详细分析。 相似文献
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The pentacene-based organic field effect transistor (OFET) with a thin transition metal oxide (WO3) layer between pentacene and metal (AI) source/drain electrodes was fabricated. Compared with conventional OFET with only metal AI source/drain electrodes, the introduction of the WO3 buffer layer leads to the device performance enhancement. The effective field-effect mobility and threshold voltage are improved to 1.90 em2/(V.s) and 13 V, respectively. The performance improvements are attributed to the decrease of the interface energy barrier and the contact resistance. The results indicate that it is an effective approach to improve the OFET performance by using a WO3 buffer layer. 相似文献
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介绍了近两年新报道的有机半导体材料,列举了其场效应性能参数;综述了有机场效应晶体管(OFET)在器件结构上的改进,重点阐述了基于常见有机功能层材料富勒烯及其衍生物、并五苯、聚3-己基噻吩的OFET对栅介质层及有机功能层与电极的界面的改进,讨论了器件结构改进对OFET阈值电压、开关比、载流子迁移率的影响;介绍了衬底温度、退火处理对OF-ET性能的影响。最后,针对有机场效应晶体管研究现状,指出未来研究中应注重开发高迁移率、高薄膜稳定性的有机功能材料和高介电常数、高成膜质量的有机栅介质材料,继续优化器件结构,改进制备工艺以提高器件性能。 相似文献
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Caroline Celle Clément Suspène Jean-Pierre Simonato Stéphane Lenfant Marc Ternisien Dominique Vuillaume 《Organic Electronics》2009,10(1):119-126
In this paper we show that thiolated self-assembled monolayers (SAMs) can be used to anchor source–drain gold electrodes on the substrate, leading to excellent electrical performances of the organic field-effect transistor (OFET) on a par with those using a standard electrode process. Using an amorphous semiconductor and a gate dielectric functionalized with SAMs bearing different dipole moments, we demonstrate that we can tune the threshold voltage alone, while keeping nearly unchanged the other electrical properties (hole carrier mobility, Ion/Ioff ratio, subthreshold swing). This differs from previous studies for which SAMs functionalization induced significant changes in all the OFET electrical performances. This result opens doors to design organic circuits using reproducible amorphous semiconductor based OFETs for which only the threshold voltage can be tuned on demand. 相似文献