Ion-implanted and permalloy hybrid magnetic bubble memory devices

Hybrid bubble memory devices have been proposed and operated with the memory density of 4 Mbit/cm². In the hybrid bubble memory devices, minor loops are composed of ion-implanted tracks with 4-µm period, and major lines and functional parts including block-replicate and swap gates are composed of Permalloy tracks with a longer period of 12 µm. Passive junctions between ion-implanted and Permalloy tracks have been developed, introducing the tapered ion-implantation technique. Improving the characteristics of the functional parts composed of Permalloy tracks, the hybrid bubble memory devices with block-replicate and swap gates have been operated, and the feasibility of the devices has been confirmed. In addition, the possibility of higher memory density has been shown.     

Magnetooptic bubble-domain devices

The practical feasibility of display and sensing systems using the magnetooptic properties of the three most widely discussed bubble-domain materials is discussed; the orthoferrites (100 μm bubbles), the garnets (10 μm bubbles), and the hexaferrites (1 μm bubbles). It is found that on a per bubble basis, the incident light intensity at the surface of the magnetic platelet necessary for both applications is remarkably close for all three materials, varying only between several microwatts and several tens of microwatts. Because of the large range of bubble diameters, however, the power per unit area varies from a quite tolerable 0.025 W/cm²in orthoferrites to a prohibitive 114 W/cm²for hexaferrite. Thus orthoferrite magnetooptic devices should be relatively straightforward, garnet devices will require careful heat sinking, and hexaferrite devices seem very doubtful.     

Uniaxial anisotropy by "radiomagnetic" treatment; controlling factors in a new process

A new process-an electron-"radiomagnetic" treatment-for obtaining high-remanence, low-coercive-force loops in magnetic alloys was recently announced. As an example, 2-MeV electron irradiation of 6-mil-thick ring laminations of polycrystalline 5-80 Mo Permalloy with 10¹⁷e/cm²in an applied circumferential magnetic field of 0.2 Oe atsim100degC produced record highs in remanence (∼6700 G) for this material. Additional studies of this process have been made to determine some of the controlling factors and the range of application. In particular, the effects of the dose (number of e/cm²) and of the preirradiation magnetic properties were examined. The results show that: 1) for a given dose of1.1 times 10^{17}2-MeV e/cm², the relative change in remanence (DeltaB_{r}/B_{r}) is always positive, ranging from 10 to 50 percent, but varies inversely with the preirradiation value of remanence (Br); 2) for the same dose, the relative change in coercive force (DeltaH_{c}/H_{c}) also depends upon the preirradiation value of remanence, but in a different way. ForB_{r} < 5000G,DeltaH_{c}/H_{c}is either negative or zero. ForB_{r} > 5000G,DeltaH_{c}/H_{c}is positive, ranging from 20 to 150 percent, and increases linearly withB_{r}; 3) if the dose is reduced tosim0.8 times 10^{17}e/cm², thenDeltaH_{c}/H_{c}is reduced to a tolerable level (∼10 percent) with no significant sacrifice in the positive gain in remanence and rectangularity. Hence, there are optimum dose ranges in the "radio-magnetic" treatments of alloys, where significant gains in remanence may be obtained without appreciable increases in coercive force.     

A comparative study of low dielectric constant barrier layer, etch stop and hardmask films of hydrogenated amorphous Si-(C, O, N)

New barrier layer, etch stop and hardmask films, including hydrogenated amorphous a-SiC_x:H (SiC), a-SiC_xO_y:H (SiCO), and a-SiC_xN_y:H (SiCN) films with a dielectric constant (k) approximately 4.3, are produced using the plasma-enhanced chemical vapor deposition technique. The chemical and structural nature, and mechanical properties of these films are characterized using X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, and nano-indentation. The leakage current density and breakdown electric field are investigated by a mercury probe on a metal-insulator-semiconductor structure. The properties of the studied films indicate that they are potential candidates as barrier layer, etch stop and hardmask films for the advanced interconnect technology. The SiC film shows a high leakage current density (1.3×10⁻⁷ A/cm² at 1.0 MV/cm) and low breakdown field (1.2 MV/cm at 1.0×10⁻⁶ A/cm²). Considering the mechanical and electrical properties requirements of the interconnect process, SiCN might be a good choice, but the N content may result in via poison problem. The low leakage current (1.2×10⁻⁹ A/cm² at 1.0 MV/cm), high breakdown field (3.1 MV/cm at 1.0×10⁻⁶ A/cm²), and relative high hardness (5.7 GPa) of the SiCO film indicates a good candidate as a barrier layer, etch stop, or hardmask.     

Electron-beam fabrication of high-density amorphous bubble film devices

A low-temperature, all-vacuum process combined with electron-beam lithography suitable for single-level masking devices using 2-μm diameter amorphous bubble films has been developed. A test vehicle which uses 0.75-μm wide chevrons and 1-μm wide T.I bars in an 8,000- bit chip configuration, resulting in an areal density of 1×10⁷bits/in², was used. Important process features are found to be: (1) laminated NiFe films to obtain low Hcand high magneto-resistive effect when deposited at low substrate temperature, (2) maintenance of low surface temperature during metallization to preserve the integrity of exposed and developed electron-beam resist pattern, and (3) proper resist profile for ease of the lift-off process. Excellent bubble device operating characteristics have been obtained as a result of uniformity in materials and structure resulting from careful control of fabrication parameters.     

Fabrication of bubble memory chips

Investigations have been made on the fabrication of accurate and uniform T-bar circuits. Chrome masks are preferable to emulsion masks, and furthermore, a minimum exposure and intimate contact have been demonstrated to be necessary for accurate and uniform pattern imaging on the AZ1350 resist. A newly developed chemical etchant, a nitric acid-base solution without ferric chloride, can almost eliminate undercutting of permalloy elements. Application of spin-on-glass prior to Permalloy evaporation can result in excellent step coverage at the places where T-bar circuits overlap conductors. Large memory chips having a capacity of 16 × 10³bits and a storage density of 10⁵bits/cm²have successfully been fabricated.     

Magnetic properties of sputtered Co-Ni-Fe-Pd films for thin-filmheads

Magnetic properties of Co-Ni-Fe-M (M=Rh, Ir, Pd, Pt) films prepared by sputtering are investigated. It is found that addition of Pd decreases the magnetostriction constant of the films from 1×10^-5 to around zero. On the other hand, addition of other elements, such as Rh, Ir, and Pt, increases it. However, coercive forces of Co-Ni-Fe-Pd films become more than 10 Oe when the magnetostriction is less than 2×10^-6. Multilayered films are investigated to obtain films with low coercive force. 43Co-27Ni-15Fe-15Pd films of 0.17 μm and Al₂O₃ films of 0.01 μm in thickness are layered time-sequentially. This multilayered film has saturation induction of 1.4 T, ≈0 magnetostriction, and a low coercive force of 1.5 Oe. Furthermore, Co-Ni-Fe-Pd films are ascertained to be as resistant to corrosion as Permalloy films. Recording heads with multilayered Co-Ni-Fe-Pd films with Al₂O₃ interlayers as magnetic cores have been fabricated. Recording characteristics were evaluated. These laminated Co-Ni-Fe-Pd/Al₂O₃ heads exhibit about 6 dB better overwrite than Permalloy heads     

Gap-tolerant half-disk bubble device margins

A simple model is presented which allows accurate prediction of bias margins of gap-tolerant half-disk propagation tracks for bubble domains. After this is verified by comparison with experimental margin data, an "isomargin" plot is derived to show how the margin varies as a function ofWandG, whereWis the minimum linewidth andGis the inter-bar gap. The bias margin is shown to decrease along a fairly straight line which goes to zero whenW + Gequals the runout diameter, i.e., whenW+G approx 1.5 W_{s}, where Wsis the bubble stripwidth or average bubble diameter. This agrees with experiment, and means that the minimum resolvable feature for half-disk type patterns must be less than0.75W_{s}, and probably will not be much larger than0.5W_{s}to0.6W_{s}. It is concluded that, if made with perfect Permalloy, T-bars and half-disks should propagate isolated bubbles equally well. The advantages of half-disks over T-bars are 1) the fatal bar-crossing problem of T-bars with multiple bubbles is avoided, 2) the minimum propagation field is lower than for T-bars, and 3) half-disks seem more tolerant of "bad" (e.g., high-coercivity) Permalloy. Also tabulated are the effects on margins of variations in the device parameters of a representative design, as might be encountered in a fabrication process with finite tolerances. A brief discussion of stop-start margins is given in conclusion.     

Polymer light emission: control of properties through chemical structure and morphology

We report on recent work concerning polymers for improved electron injection and transport, for enhanced photoluminescence quantum efficiency and for polarised emission. A new blue-emitting triazole containing co-polymer with high photoluminescence efficiency is described. This polymer acts to enhance the electroluminescence efficiency when used in two layer devices with poly(p-phenylene-vinylene) [PPV] as a hole transporting emitter. The two layer device has an external quantum efficiency of ≈ 0.08% at a luminance of 250 cd/m² for a current density of 100 ma/cm². Use of a meta-phenylene-vinylene conjugation interrupting unit as a means of enhancing photoluminescence quantum efficiency is also described. The resulting co-polymer allows fabrication of three layer devices that have an external efficiency of ≈ 1% at a luminance of 96 cd/m² for a current density of 3.7 mA/cm². Finally, we report on the orientation of a polyfluorene conjugated polymer via alignment of its liquid crystal phase on rubbed substrates. Thermotropic liquid crystal phases offer an approach to polarised electroluminescence emission and we discuss the merits of this and various other approaches.     

A Device-Level Vacuum-Packaging Scheme for Microbolometers on Rigid and Flexible Substrates

This paper reports on the design, fabrication, and characterization of device-level vacuum-packaged microbolometers on rigid Si wafers and flexible polyimide substrates. Semiconducting yttrium barium copper oxide (commonly referred to as YBCO) serves as the bolometric material. Operating micromachined bolometers in vacuum reduces the thermal conductance G_th from the detector to the substrate. If flexibility of the substrate is not to be sacrificed, then the vacuum packaging needs to be done at the device level. Here, the microbolometers are fabricated on a silicon nitride support membrane, isolated from the substrate using surface micromachining. Suitable materials as well as various dimensions in the vacuum cavity are determined using finite-element method (FEM)-based CoventorWARE. A vacuum cavity made of Al₂O₃ has been designed. The thermal conductance G_th of bolometers with the geometry implemented in this work is the same for devices on rigid and flexible substrates. The theoretical value of G_th was calculated to be 4.0 x 10^-6 W/K for devices operating in vacuum and 1.4 x 10^-4 W/K for devices operating at atmospheric pressure. Device-level vacuum-packaged microbolometers on both rigid Si and flexible polyimide substrates have been fabricated and characterized for optical and electrical properties. A low thermal conductance of 1.1 X 10^-6 W/K has been measured six months after fabrication, which implies an intact vacuum cavity.     

Up-conversion dynamics in GdAlO3:Er single crystal fibre

Green fluorescence has been obtained under continuous laser excitation in the 780–860 nm range in GdAlO₃:Er³⁺. With the help of the Judd-Ofelt treatment we built a model based on population rate equations to describe its time evolution. We found the intensity parameters to be Ω₂ = 2.045 × 10⁻²⁰ cm², Ω₄ = 1.356 × 10⁻²⁰ cm² Ω₆ = 1. 125 × 10⁻²⁰ cm². Even if a two-photon absorption and a looping mechanism are necessary to well describe the dynamics, the main process responsible for up-conversion is energy transfer between erbium ions.     

Growth and spectroscopy of Dy doped in ZnWO4 crystal

Single-crystal ZnWO₄:Dy³⁺ was grown by Czochralski technique. The XRD, absorption spectra as well as fluorescence spectrum are investigated and the Judd–Ofelt intensity parameters Ω₂, Ω₄, Ω₆ are obtained to be 7.76 × 10⁻²⁰ cm², 0.57 × 10⁻²⁰ cm², 0.31 × 10⁻²⁰ cm², respectively. Calculated radiative transition rate, branching ratios and radiative lifetime for different transition levels of ZnWO₄:Dy³⁺ crystals are presented. Fluorescence lifetime of ⁴F_9/2 level is 158 μs and quantum efficiency is 66%.The most intense fluorescence line at 575 nm correlative with transition ⁴F_9/2 → ⁶H_13/2 is potentially for application of yellow lasers.     

Yb to Er energy transfer and rate-equations formalism in the eye safe laser material Yb:Er:Ca2Al2SiO7

Rate equations formalism is used to predict the population ratio of the Er^{3+ 4}I_13/2 levels involved in the 1.55 μm laser transition in the Yb:Er:CAS laser materials. An effective Yb → Er energy transfer, favourable to the Er³⁺ 1.55 μm laser emission, is demonstrated in this laser host. Indeed, the Yb → Er transfer and the Er → Yb back transfer rates are calculated to be 6 x 10⁻¹⁶ and 0.45 x 10⁻¹⁶ cm³ s⁻¹, respectively. Attempts of codoping the system with Nd³⁺, Eu³⁺ and Ce³⁺ have been realised in order to increase the population of the Er^{3+ 4}I_13/2 laser emitting level. Best results are obtained with Ce³⁺ ion since in the sample containing 6 x 10²⁰ Ce³⁺/cm³, the Er^{3+ 4}I_11/2 level lifetime is divided by a factor of 3 while the Er^{3+ 4}I_13/2 fluorescence lifetime remains unaffected. On the contrary, codoping with Nd³⁺ or Eu³⁺ ions simultaneously decreases the Er^{3+ 4}I_11/2 and ⁴I_13/2 kinetics parameters. The role of the other parameters such as Yb/Er concentrations ratios is also discussed.     

0.25 × 106bit/in2NDRO coupled film memory elements

The fabrication and operation of high-density (0.25 × 10⁶bit/in²) nondestructive readout (NDRO) memory elements are described. The high density is made possible by coupled films and Permalloy keeper. The NDRO is made possible by multiple-pulse WRITE or hard-direction bias field. Typical performance parameters areI_{w} = 60mA,I_{b} = 30mA, andV_{s} = 150μV/3 ns. The small signal is detectable by multiple-pulse READ. When such memory elements are to be fabricated with peripheral circuits on the same Si chip, a self-contained chip will be obtained. Such chips could enjoy the same advantages as semiconductor memory chips such as few leads, modularity, amenability to bit organization, and possibility for error-correction, but would be capable of higher storage density due to simpler planar configuration.     

Neutron irradiation of Nb3Sn and NbTi multifilamentary composites

NbTi and Nb3Sn multifilamentary composites have been irradiated with fast-neutrons at 60 ± 5°C to fluences of 1.2×10²⁰n/cm²(E > 1 MeV). The NbTi samples show only a moderate reduction of Icas a function of neutron fluence in an applied field of 40 kG. Reductions in Icwere observed for fluences greater than 3 × 10¹⁷n/cm²and saturate at 18% for fluences greater than 3-4 × 10¹⁹n/cm². The Nb3Sn composites showed large neutron radiation induced changes in Tc, Icand Hc2. Reductions in Tcwere observed for fluences greater than 7 × 10¹⁷n/cm². No measurable changes in Ic(40 kG) were observed below 10¹⁸n/cm². Between 2 and 3×10¹⁸n/cm², however, there is an apparent threshold where a very rapid reduction in Ic(40 kG) is initiated. At the threshold the decrease in Tcis 13%. Between the threshold and 1.1 × 10¹⁹n/cm², I2(40 kG) has been reduced to 4% of the unirradiated value. These changes in superconducting properties in NbTi and Nb3Sn are analyzed in terms of the radiation induced defects. The impact of the response to irradiation of both materials on their applications in fusion reactor magnets is discussed.     

New single-mask approach to bubble device fabrication

Permalloy devices with two separate levels of fine permalloy and conductor patterns have been fabricated by the use of a single-mask process. This process makes possible the production of devices having an essentially conventional design in addition to a completely planar structure. The features of this new process include 1) preparation of a reticle on which patterns for both permalloy and conductor layers are superimposed, 2) use of SiO2, Mo/Au/Mo, SiO2, permalloy, and TiO2thin films deposited sequentially on the bubble materials, and 3) simultaneous delineation of both photoresist patterns with two different thicknesses and of the desired patterns by CF4plasma etching and ion-milling.     

Noise Characteristics of ZnO-Nanowire Photodetectors Prepared on ZnO:Ga/Glass Templates

In this paper, we report the fabrication of vertically well-aligned ZnO nanowire ultraviolet (UV) photodetectors on ZnO:Ga/glass templates. With 1 V applied bias, it was found that dark current density of the device was only 1.37times10^-7 A/cm². It was also found that UV-to-visible rejection ratio of the fabricated photodetector was around 1000 with a maximum quantum efficiency of 12.6%. It was also found that noise equivalent power and normalized detectivity of the ZnO nanowire photodetector were 5.73times10^-11 W and 6.17times10⁹ cmHz^0.5W^-1, respectively.     

镁合金超疏水环氧复合涂层的制备与性能EI北大核心CSCD

传统的超疏水表面的制备过程比较复杂,机械稳定性差,这严重制约了超疏水表面的实际应用。采用“黏合剂+纳米粒子”的方法,在镁合金表面制备一种无氟、持久稳定的超疏水环氧复合涂层。接触角测试结果表明,复合涂层的接触角最高可达160.2°,且在3.5%(质量分数)NaCl溶液中浸泡30天后,接触角仍然高达103°;EIS结果表明,在5个加速老化循环周期后,复合涂层的|Z|_(0.01 Hz)仍高于10^(9)Ω·cm^(2),展现出优异的耐盐雾性能和耐蚀性能;摩擦磨损实验结果显示,在19.6 N的载荷下机械摩擦8 h后,复合涂层的|Z|_(0.01 Hz)高达1.84×10^(9)Ω·cm^(2)。通过“空气垫”的屏障作用,复合涂层能够为镁合金提供高效且持久的腐蚀防护,“黏合剂+纳米粒子”策略为超疏水涂层的制备提供了新的思路。     

Characteristics of the radiation damage seen in the silicon microstrip detector of Fermilab experiment E771

The central region of the silicon microstrip detector used in Fermilab experiment E771 was subjected to a peak fluence of 9.5 × 10¹³ p/cm² induced by 800 GeV protons over a two-month period. Fourteen 300 μm thick planes manufactured by Micron Semiconductor were operated at bias voltages ranging from 84 to 109 V. Analysis of data from low intensity beam triggers taken near the end of the run shows that the mean pulse height from our amplifiers began to decline at a fluence of approximately 2 × 10¹³ p/cm² and fell to near zero by 6 × 10¹³ p/cm². We show that the use of fast amplifiers contributed to this early loss of signal.     

Ti6Al4V钛合金渗碳层在HF中的腐蚀行为

用真空感应渗碳方法对Ti6Al4V钛合金进行高速渗碳,研究了渗碳层在HF溶液中的腐蚀行为。对腐蚀前后渗碳层的相结构和形貌的分析发现：对Ti6Al4V钛合金高速渗碳后,在表面生成一层TiC和CTi_0.42V_1.58复合化合物相的渗碳层。因为表面有渗碳层,Ti6Al4V钛合金在浓度为0.2%的HF中?泡其腐蚀速率从4.65×10^-10 g·m^-2·h^-1降低到3.3×10^-10 g·m^-2·h^-1。电化学腐蚀测试结果表明,其自腐蚀电位从未渗碳时的-0.94 V升高到-0.68 V,腐蚀电流密度从4.10 mA·cm^-2降至1.65 mA·cm^-2,极化电阻从6.36 Ω·cm²增大到15.8 Ω·cm²,R_t从0.2 Ω·cm²增大到5.7 Ω·cm²。渗碳层具有n型半导体特性,未渗碳样品具有p型半导体特性。Ti6Al4V钛合金渗碳后,在腐蚀过程中电子转移的阻力增大,使耐蚀性提高。F^-对Ti6Al4V钛合金渗碳层的腐蚀机理,主要是析氢腐蚀。