一种高灵敏度在线式MEMS微波功率传感器

为了改善在线式MEMS微波功率传感器的灵敏度特性,设计了一种新型双悬臂梁结构的MEMS微波功率传感器。该结构将测试电极和锚区设计在中心信号线的两侧。建立了双悬臂梁集总电路等效模型,研究了双悬臂梁结构的微波功率传感器的微波特性。构建了枢纽式双悬臂梁静力学模型,研究并分析了新型悬臂梁结构的过载功率与灵敏度。结果表明,相比于测试电极和锚区位于信号线同侧的传统单悬臂梁结构,新型双悬臂梁结构的灵敏度提升了6～8倍。这在一定程度上解决了电容式微波功率传感器检测灵敏度较低的问题。     

一种新型的在线式微波功率传感器

提出了一种基于MEMS技术的在线式微波功率传感器结构,并对该结构进行了理论分析、设计、制作和测量.该结构通过测量由MEMS膜耦合出的一小部分微波功率实现功率的测量.该结构制作工艺与GaAs MMIC工艺完全兼容.测量结果显示,在12GHz频率以内,微波功率传感器的反射系数小于-15dB,插入损耗小于2dB,在10GHz中心频率下的灵敏度为10 4μV/mW.     

一种新型的在线式微波功率传感器

提出了一种基于MEMS技术的在线式微波功率传感器结构,并对该结构进行了理论分析、设计、制作和测量.该结构通过测量由MEMS膜耦合出的一小部分微波功率实现功率的测量.该结构制作工艺与GaAs MMIC工艺完全兼容.测量结果显示,在12GHz频率以内,微波功率传感器的反射系数小于-15dB,插入损耗小于2dB,在10GHz中心频率下的灵敏度为10 4μV/mW.     

一种基于GaAs MMIC技术的X波段电容式膜桥MEMS微波功率传感器

This paper presents the modeling, fabrication, and measurement of a capacitive membrane MEMS microwave power sensor. The sensor measures microwave power coupled from coplanar waveguide （CPW） transmission lines by a MEMS membrane and then converts it into a DC voltage output by using thermopiles. Since the fabrication process is fully compatible with the GaAs monolithic microwave integrated circuit （MMIC） process, this sensor could be conveniently embedded into MMIC. From the measured DC voltage output and S-parameters, the average sensitivity in the X-band is 225.43μV/mW, while the reflection loss is below -14 dB. The MEMS microwave power sensor has good linearity with a voltage standing wave ration of less than 1.513 in the whole X-band. In addition, the measurements using amplitude modulation signals prove that the modulation index directly influences the output DC voltage.     

一种开路短截线结构的耦合式微波功率传感器

提出了一种基于MEMS技术的在线式微波功率传感器结构,并对该结构进行了理论分析、设计、制作和测量。该微波功率传感器通过加入阻抗匹配和开路短截线结构实现低损耗和宽频带的在线测量。该结构制作工艺与GaAs MMIC工艺完全兼容。测量结果显示,在8GHz～12GHz频率范围内,微波功率传感器的反射系数小于-18dB,插入损耗优于0.45dB,在10GHz中心频率下的灵敏度为12.0μV/mW。     

电容式MEMS微波功率传感器过载功率的优化

提出了一种等效串联电容式MEMS微波功率传感器,在不影响传感器微波性能的前提下,实现了过载功率的提升.分别建立了传感器的力学模型和集总参数模型,对过载功率特性和微波特性进行了优化与分析.使用Ansys软件和Hfss软件对传感器相关参数进行了仿真,验证了文章所建立模型的准确性.结果表明,当MIM电容相对值β从1.25变化...     

微机械传输线的毫米波应用

以几种典型的毫米波波段微机械传输线结构为研究对象，讨论了近几年的最新研究成果，包括微带、带状线、开放和封闭的共面波导。微机械传输线能够充分降低介质损耗，具有传输损耗小、工作频带宽、色散小、制作工艺能与传统集成电路工艺兼容等特点，是毫米波波段平面集成传输线应用的首选技术方案，同时微机械传输线的出现为毫米波单片集成电路以及毫米波系统的微型化提供了解决方案。     

雷达用微波功率器件的发展趋势

本文从雷达技术发展的角度阐述了雷达用微波功率器件的发展趋势，并指出今后将主要发展ＭＰＭ，ＭＭＩＣ，毫米波真空器件和真空微电子器件。     

终端式MEMS微波功率传感器的热时间常数研究

A terminating type MEMS microwave power sensor based on the Seebeck effect and compatible with the GaAs MMIC process is presented.An electrothermal model is introduced to simulate the thermal time constant. An analytical result,about 160 ms,of the thermal time constant from the non-stationary Fourier heat equations for the structure of the sensor is also given.The sensor measures the microwave power jumping from 15 to 20 dBm at a constant frequency 15 GHz,and the experimental thermal time constant result is 180 ms.The frequency is also changed from 20 to 10 GHz with a constant power 20 dBm,and the result is also 180 ms.Compared with the analytical and experimental results,the model is verified.     

一种宽动态范围的在线式微波功率检测系统

设计了一种具有宽动态范围的在线式MEMS微波功率检测系统,建立了MEMS悬臂梁的等效模型,对MEMS悬臂梁结构进行了过载功率的理论研究,得到过载功率与梁尺寸的关系。并基于此关系设计了不同尺寸的MEMS梁,以提高系统的功率检测上限,从而提高在线式微波功率检测系统的动态范围。根据系统的结构参数,得到系统理论动态范围为0～8.41 W。建立了微波功率检测系统的仿真模型,s参数仿真结果表明,在8～12 GHz下,系统的回波损耗为-37.61 dB至-46.15 dB,插入损耗为-0.28 dB至-0.16 dB。系统在具有较宽动态范围的同时兼具良好的微波特性。该研究对基于MEMS梁的微波功率检测系统设计具有一定的参考价值。     

A micromachined inline type microwave power sensor with working state transfer switches

A wideband 8-12 GHz inline type microwave power sensor,which has both working and non-working states,is presented.The power sensor measures the microwave power coupled from a CPW line by a MEMS membrane.In order to reduce microwave losses during the non-working state,a new structure of working state transfer switches is proposed to realize the two working states.The fabrication of the power sensor with two working states is compatible with the GaAs MMIC(monolithic microwave integrated circuit) process.The experimental results show that the power sensor has an insertion loss of 0.18 dB during the non-working state and 0.24 dB during the working state at a frequency of 10 GHz.This means that no microwave power has been coupled from the CPW line during the non-working state.     

A capacitive membrane MEMS microwave power sensor in the X-band based on GaAs MMIC technology

This paper presents the modeling, fabrication, and measurement of a capacitive membrane MEMS microwave power sensor. The sensor measures microwave power coupled from coplanar waveguide (CPW) transmission lines by a MEMS membrane and then converts it into a DC voltage output by using thermopiles. Since the fabrication process is fully compatible with the GaAs monolithic microwave integrated circuit (MMIC) process, this sensor could be conveniently embedded into MMIC. From the measured DC voltage output and S-parameters, the average sensitivity in the X-band is 225.43 μV/mW, while the reflection loss is below-14 dB. The MEMS microwave power sensor has good linearity with a voltage standing wave ration of less than 1.513 in the whole X-band. In addition, the measurements using amplitude modulation signals prove that the modulation index directly influences the output DC voltage.     

A novel symmetrical microwave power sensor based on MEMS technology

A novel symmetrical microwave power sensor based on MEMS technology is presented. In this power sensor, the left section inputs the microwave power, while the right section inputs the DC power. Because of its symmetrical structure, this power sensor provides more accurate microwave power measurement capability without mismatch uncertainty and temperature drift. The loss caused by the microwave signal is simulated in this power sensor. This power sensor is designed and fabricated using GaAs MMIC technology. And it is measured in the frequency range up to 20 GHz with an input power in the 0-80 mW range. Over the 80 mW dynamic range, the sensitivity can achieve about 0.2 mV/mW. The difference between the input power in the two sections is below 0.1% for an equal output voltage. In short, the key aspect of this power sensor is that the microwave power measurement is replaced with a DC power measurement.     

一种基于MEMS技术的新型对称式微波功率传感器

A novel symmetrical microwave power sensor based on MEMS technology is presented. In this power sensor, the left section inputs the microwave power, while the fight section inputs the DC power. Because of its symmetrical structure, this power sensor provides more accurate microwave power measurement capability without mismatch uncertainty and temperature drift. The loss caused by the microwave signal is simulated in this power sensor. This power sensor is designed and fabricated using GaAs MMIC technology. And it is measured in the frequency range up to 20 GHz with an input power in the 0-80 mW range. Over the 80 mW dynamic range, the sensitivity can achieve about 0.2 mV/mW. The difference between the input power in the two sections is below 0.1% for an equal output voltage. In short, the key aspect of this power sensor is that the microwave power measurement is replaced with a DC power measurement.     

终端式MEMS微波功率传感器的设计与制作

A terminating type MEMS microwave power sensor based on the Seebeck effect and compatible with the GaAs MMIC process is presented. An electrothermal model is introduced to simulate the heat transfer behavior and temperature distribution. The sensor measured the microwave power from –20 to 20 dBm up to 20 GHz. The sensitivity of the sensor is 0.27 mV/mW at 20 GHz, and the input return loss is less than –26 dB over the entire experiment frequency range. In order to improve the sensitivity, four different types of coplanar waveguide （CPW） were designed and the sensitivity was significantly increased by about a factor of 2.     

Design and fabrication of a terminating type MEMS microwave power sensor

A terminating type MEMS microwave power sensor based on the Seebeck effect and compatible with the GaAs MMIC process is presented.An electrothermal model is introduced to simulate the heat transfer behavior and temperature distribution.The sensor measured the microwave power from-20 to 20 dBm up to 20 GHz.The sensitivity of the sensor is 0.27 mV/mW at 20 GHz.and the input retum loss is less than-26 dB over the entire experiment frequency range.In order to improve the sensitivity,four different types of coplanar waveguide(CPW) were designed and the sensitivity Was significantly increased by about a factor of 2.     

基于GaAs晶体管2.45 GHz大功率微波整流电路

针对基于 GaAs晶体管的大功率微波整流电路,设计了一种应用于大功率微波无线输能系统的整流电路。该大功率微波整流电路基于微带结构,工作频率为2.45 GHz,具有质量轻,整流输出功率大的特点。在不同微波输入功率和负载下进行测量,发现当输入微波功率为30 dBm,负载为38Ω时,整流电路获得了测量过程中最大整流效率的41%;当输入微波功率为34 dBm,负载为23Ω时整流电路得到测量过程中获得的最高直流功率输出28.7 dBm。通过完善和改进电路,可以进一步提高整流的效率,并应用于高功质比的微波整流天线。