An Octave-Band Switched-Line Microstrip 3-b Diode Phase Shifter

The design of an octave-band (2.5-5.0-GHZ) switched-line diode phase shifter is described. An analysis showing the need for a choice of the shunt-diode switch configuration for broad-band operation is presented. Curves of even- and odd-mode impedance of parallel coupled microstrip lines employed in Schiffman differential phase shifters are presented. The configuration and performance characteristics of the phase shifter are described,     

A Method for Broad-Band Matching of Microstrip Differential Phase Shifters

Meander-line phase shifters in microstrip are not well matched, because of the phase-velocity difference between the odd and the even mode in the coupled-line region. A stepped impedance design is introduced which allows one to realize, for example, a quarter-wavelength 90/spl deg/ Schiffman phase shifter with three sections, having, theoretically, a return loss better than 30 dB over a 1:5 bandwidth. Design equations are given and are confirmed by measurements on microwave integrated circuits in the frequency range 2-10 GHz.     

A Beam-Steering Broadband Microstrip Antenna with High Isolation

In this paper, a 4.2–7.2 GHz(52.6%)beam-steering microstrip antenna was proposed. The proposed antenna consists of three tapered slots and feeds.The three radiation directions of the antenna on the plane are independent of each other, and the three feeds correspond to the three radiation structures. Symmetry isolation trenches are introduced to improve isolation between different ports. Radiation pattern simulation and measurement show horizontal beam steering at the sampled frequencies of 4.2, ...     

Ferrite Microstrip Phase Shifters with Transverse and Longitudinal Magnetization (Correspondence)

Phase shifts of opposing sign are produced in a finear section of microstrip by transverse and longitudinal magnetization of the ferrite substrate. Nonreciprocal phase shift is also produced by the transverse magnetization. Theoretical calculations of phase shift that account for both the diamagnetic effects and the tensor properties of the ferrite permeability agree well with properly constructed experimental measurements. These measurements use closed magnetic circuits to remove the nonuniform demagnetization effects. A lightweight reciprocal phase shifter has been constructed that utilizes both transverse and longitudinal magnetization at low drive power with closed magnetic circuits to obtain a high figure of merit.     

X波段GaN基小相位移相器设计

基于0.25 μm GaN HEMT工艺,设计并制作了X波段11.25°和22.5°的小相位移相器单片微波集成电路(MMIC),两个移相器单元均采用低通开关滤波型拓扑结构.最终芯片面积分别为0.9 mm× 1.05 mm和0.95 mm× 1.05 mm.芯片测试结果表明,两个小相位移相器性能良好,且测试结果与仿真结果吻合.在8 ～ 12 GHz频带内,11.25°和22.5°移相器电路的相移精度小于2.8°,输入回波损耗分别优于-15和-12 dB,插入损耗值分别小于1和1.5 dB,幅度波动分别小于0.8和1.3 dB.两个移相器电路的1 dB压缩点输入功率均大于36 dBm,其功率容限优于GaAs HEMT设计的移相器.结果表明,所设计的移相器具有优异的相移精度以及良好的功率性能,可广泛应用于高精度和大功率的雷达系统中.     

Electrically Steerable Single-Layer Microstrip Traveling Wave Antenna With Varactor Diode Based Phase Shifters

The design of electrically steerable traveling wave microstrip antenna arrays is presented. Varactor diode based phase shifters implemented on the same metallic layer as the patch elements are used to provide a variable progressive phase shift in the array. Two antennas for the 5.8 GHz ISM band, manufactured as single layer printed designs on a standard PTFE soft substrate, are demonstrated. A ten-element beam-tilting vertical array using transmission type phase shifters is realized, yielding between 11.8 to 13.9 dBi gain for the 0deg to 11deg beam tilt tuning range. Using wide phase tuning range reflection type phase shifters a five-element horizontally scanning array with -32deg to 32deg steering range and 10.9-11.3 dBi gain has been realized.     

Design of 6–18 GHz Wideband Phase Shifters Using Radial Stubs

A 6-18 GHz wideband phase shifter is proposed. This phase shifter consists of one Lange coupler, four radial stubs, and four switching diodes and bias circuits. Wideband phase shifting was achieved using two different pairs of radial stubs as the reflective loads of the Lange coupler. Four phase shifters of 11.25, 22.5, 45, and 90deg were fabricated and tested. Over the frequency band of 6-18 GHz, the measured maximum phase errors were plusmn2.2, 2.2, 3.6, and 5.5deg for the 11.25, 22.5, 45, and 90deg phase shifters, respectively     

Ka波段开关线型MEMS移相器的设计与研究

面向现代通信及相控阵雷达领域的需求,设计了一种移相间隔为22.5°的Ka波段4位开关线型射频MEMS移相器。主要对实现移相功能的四个移相单元进行了设计,采用台阶补偿技术优化移相单元上下通路分工选通,以提供最佳的阻抗匹配;采用直角转角结构,设计了可提高CPW直角性能的延迟线,并对应用该延迟线的4位开关线型移相器进行了总体设计。用HFSS进行建模仿真,结果表明,在0~40 GHz工作频段内,16个状态的插入损耗均小于2.15 dB,回波损耗均大于19.18 dB,驻波比均小于1.25,在40 GHz频点处的相移误差在1.57°以内,整体尺寸为10 mm²。     

Design of a Broad-Band 4-Bit Loaded Switched-Line Phase Shifter

A 4-bit p-i-n diode switched-line phase shifter was fabricated for use in the 2.0- to 4.0-GHZ frequency range. Extremely good phase characteristics were easily obtained over two octaves by employing a resistive loading technique to eliminate resonance problems. A single bit was modeled and analyzed on a computer from 1.5 to 6.0 GHz. Test results of a microstrip realization of this bit, which correlates well with the computer model, are presented. A unique compatible driver used with the phase shifter, and the microstrip fabrication process used in constructing the phase shifter are also presented.     

A Monolithic Phased Array Using 3-bit Distributed RF MEMS Phase Shifters

This paper presents a novel electronically scanning phased-array antenna with 128 switches monolithically implemented using RF microelectromechanical systems (MEMS) technology. The structure, which is designed at 15 GHz, consists of four linearly placed microstrip patch antennas, 3-bit distributed RF MEMS low-loss phase shifters, and a corporate feed network. MEMS switches and high-Q metal-air-metal capacitors are employed as loading elements in the phase shifter. The system is fabricated monolithically using an in-house surface micromachining process on a glass substrate and occupies an area of 6 cm times 5 cm. The measurement results show that the phase shifter can provide nearly 20deg/50deg/95deg phase shifts and their combinations at the expense of 1.5-dB average insertion loss at 15 GHz for eight combinations. It is also shown by measurements that the main beam can be steered to required directions by suitable settings of the RF MEMS phase shifters.     

BST移相器的优化设计算法

近年来,人们在微波应用领域对BST移相器进行了很多研究。本文对BST铁电移相器电路进行了等效分析,就电路中重要部分-BST电容加载的方法进行研究,创新地提出了BST电容非周期性加载的设计思路。用M atlab编程实现并论证这种设计思路。使用这种优化方法设计出的非周期性加载移相器各项指标均优于周期性加载移相器,现已申请专利(专利号:200510028313.9)。     

Nonreciprocal Remanence Ferrite Phase Shifters Using the Grooved Waveguide

For the purpose of improving the performance charasteristics of the nonreciprocal remanence ferrite phase shifter, a new configuration with a grooved waveguide is proposed and analyzed. Some results calculated as functions of dielectric and ferrite thickness, waveguide dimensions, and frequency are shown and compared as being in good agreement with experiments at the X band. The figure of merit (differential phase shift per insertion loss) and the handling power of the proposed phase shifter are discussed in comparison with those of the conventional waveguide geometry.     

Low Cost Design Techniques for Semiconductor Phase Shifters

The design and performance of two microstrip semiconductor phase shifters operating at S band and UHF are described. The S-band diode phase shifter uses thick-film metallization on a 99.5-percent alumina substrate and uses series coupled diodes for the small bits and constant phase frequency switched life bits for the three large bits. The 4-bit UHF phase shifter uses eight p-i-n diodes mounted in a low dielectric constant microstrip circuit and operates at a power level of 8 kW peak, 240 W average, and has an average insertion loss of 0.7 dB. Phase and VSWR distributions on 800 units produced are also given. The characteristics of two new microwave semiconductor switching devices, the field-effect diode (FED) and the resistive gate switch are described. These devices operate with only a voltage change. Design and performance of an SP2T switch and 3-bit phase shifter using the field-effect diode are presented.     

微带Rotman透镜的设计与软件分析

运用二维远场理论分析微带透镜腔体内的电磁波传输方式,得出不同输入端口在各输出端口上的幅度和相位分布特性,并验证了输出端口的最佳接收方向。比较分析了实测结果与Planar EM和HFSS软件仿真结果的幅度和相位的差异,从而指出了Planar EM软件分析仿真微带透镜问题的可信度。     

BST薄膜铁电移相器研究进展

钛酸锶钡(BST)薄膜因其具有高的介电调谐量,相对低的损耗tgδ和快的开关速度,在微波移相器的应用中显示出巨大优势。介绍了改善BST薄膜的介电性能的有效方法,衬底材料的选择,以及BST薄膜铁电移相器的结构类型和研究进展。     

Design of Multisection Impedance-Matched Dielectric-Slab Filled Waveguide Phase Shifters

Optimum-matched dielectric-slab filled waveguide phase shifters are designed with the method of field expansion into eigenmodes, which includes higher order mode interaction between the step discontinuities. The relative phase shift is mechanically adjustable between 0° and about 360° at midband frequency by lateral displacement of the dielectric slab. Computer-optimized design data are given for Ku-, K-, and Ka-band prototypes which achieve return losses of better than 40 dB, both as a function of displacement at midband frequency and as a function of frequency at fixed displacements. Measurements verify the theory.     

毫米波数控移相器的设计与制作

移相器是毫米波相控阵雷达收发系统重要电路,基于安捷伦IC-CAP软件及砷化镓原片工艺线,研究了砷化镓毫米波开关器件测试、建模技术及其应用。采用0.15μm GaAs PHEMT工艺成功制作了一款Ka波段5位数控移相器MMIC,对毫米波数控移相器MMIC集成电路的设计、制作过程进行了阐述,并给出了测试结果。电路设计采用了开关滤波拓扑结构,运用微波探针在片测试系统对芯片进行了实测,在34~36 GHz范围内获得了优异的电性能。给出了移相器的测试曲线,32态均方根移相误差(RMS)5°,插入损耗典型值8 dB,输入/输出电压驻波比系数典型值2,芯片尺寸为2.5 mm×1.5 mm×0.1 mm。     

The Design and Measurement of Two Broad-Band Coaxial Phase Shifters

Two mechanical (servo-driven) phase shifters were developed in response to systems requirements of low torque, compactness, octave bandwidth, and linear relation between mechanical motion and phase shift. One phase shifter relies upon the axial motion of a dielectric slug through a helix wound from modified miniature rigid coaxial cable. The second design consists of a 3-db coupler with ganged movable shorts on two ports. The helix design displayed phase shift of 720 degrees at 3 kmc and linearity to within +- 3 degrees. The coupler design is capable of achieving 720 degrees phase shift at 3 kmc and linearity within +-2 degrees. A precision measuring facility (phase bridge) was developed for the purpose of determining the electrical performance of the phase shifters. A brief analysis is included to illustrate the prediction of maximum possible errors in the phase bridge and the phase shifters, in terms of transmission line parameters.     

相控阵雷达铁氧体移相器设计

铁氧体移相器在相控阵雷达中得到了广泛应用.主要分析了设计铁氧体移相器时需考虑的指标和设计方法,主要内容包括峰值功率和平均功率、饱和磁化强度、剩磁比、插损、工作频率范围、温度特性、横截面尺寸、陶瓷材料、相移误差和驱动功率等,并对指标之间的相互影响进行了分析.