一种超宽带紧耦合相控阵天线设计

设计了一种阵列规模大小为8*8的超宽带紧耦合相控阵天线。首先,基于无限周期边界条件,采用等效电路模型理论分析方法,对阵列阵列单元进行了设计;其次,边缘截断采取了半无限周期阵列模型分析方法处理,降低了计算工作量并显著提升了阵列边缘截断处理优化效率;最后,根据改良后的半无限周期天线阵列模型,完成了8*8紧耦合阵列天线的设计。仿真结果表明,所设计天线可工作于3 ~ 17.5 GHz(5.7:1)频段,阵中多数单元于±45°的波束扫描范围内具有良好的匹配特性,天线辐射波束较好,阵面天线尺寸只有0.81λ_min*0.72λ_min*0.2λ_min。     

基于集总电阻加载吸波器的紧耦合超宽带天线

基于集总型电阻频率选择表面吸波器,设计一款超宽带紧耦合天线阵列。在天线阵列与地板之间加入两层结构集总型电阻频率选择表面吸波器,改变天线与地板之间的传输特性,有效抑制天线短路零点出现,扩展天线带宽;同时利用天线间强耦合效应,减小天线单元结构尺寸。使用集总电阻和金属环构成的吸波器代替常规阻抗型频率选择表面结构,降低天线阵列设计与加工难度,同时可有效改善天线阻抗匹配。仿真实验表明,通过调节集总频率选择表面吸波器物理结构、加载电阻阻值和天线间耦合电容值等参数,当天线单元驻波比小于3 时,可实现带宽范围达12.6:1 (1.5～19 GHz)的超宽带性能;并在2.2～18.3 GHz 范围内具有驻波比小于2 的良好匹配性能。     

强耦合发射阵的电磁兼容分析

对于强耦合有源相控阵,其阵中单元存在共模和差模两种辐射模式,为减小共模辐射对发射系统的 干扰,本文从奇偶模理论出发,对阵中单元天线的辐射模式进行分解,得到与发射系统输出相关的奇模阻抗和奇模 辐射功率,其意义在于实现了强耦合阵列端口两种有源阻抗分离,从而为单元端口匹配提供了理论支持;本文最终 以3伊3 强耦合阵为例,用一种180毅混合巴伦对耦合天线奇、偶模进行物理分解,并进行了阻抗匹配设计,实验结果表 明,该方法有效降低了系统中的共模干扰,对一般有源阵列电磁兼容分析及工程应用具有参考意义。     

5G大规模紧耦合阵列天线简析

简述5G网络通信技术的发展趋势以及传统二维、三维阵列天线的基本原理和自身劣势,并在此基础上提出5G大规模紧耦合阵列天线所具有的技术优势,认为5×5的25单元紧耦合阵列天线的各个单元与其子阵列之间的频段满足了<3的数值范围要求,有源电压驻波比也在可控范围内,说明匹配效果较好,性能较高。     

5G中的超宽带阵列天线及其小型化技术

研究了超宽带阵列天线的设计及其低剖面技术。将ADS电路仿真软件与电磁场全波仿真软件Ansoft HFSS相结合,利用具有紧耦合的偶极子天线单元设计具有宽带工作的低剖面强耦合阵列天线。研究结果表明,在工作频率范围0.67~3. 78 GHz频段内,该天线阵列的电压驻波比优于2. 0,相对带宽为139. 78%,天线阵列的剖面仅有40.25 mm。其次,研究了加载人工磁导体结构实现阵列天线的低剖面技术。采用构成高阻抗地的人工磁导体结构改善了天线高频谐振性能,从而降低了天线的剖面高度。全波电磁仿真结果表明,该天线阵列在1. 1 ~ 2. 8 GHz范围的工作频率中电压驻波比优于2. 0,天线的剖面高度仅为24 mm,相对带宽78%。该技术可拓展应用到5G天线的开发。     

一种宽带双极化紧耦合偶极子阵列天线设计

提出了一种宽带双极化紧耦合偶极子阵列天线,单元采用全金属结构以满足大功率输入需求,渐变平行平板双线与短路柱的馈电结构设计可实现宽带阻抗匹配并移除共模谐振影响,针对紧耦合阵列的边缘截断效应提出了一种短接与差异化加载的阻抗调节方法,实现了在不额外加载哑元情况下的阵列边缘端口的良好阻抗匹配。有限大阵列仿真结果表明,在0.8～2 GHz工作频段内所有端口的有源驻波小于2.5,最大增益达到13.3 dBi,定向辐射性能优良。加工天线样品的测试结果与仿真结果吻合良好,证明了阵列性能的有效性。     

一种宽带缝隙耦合微带天线阵列的设计北大核心CSCD

微带阵列天线具有增益高、剖面低、体积小、重量轻、成本低、易共形等优势,为了克服其频带窄、交叉极化强的问题,文中采用偏置缝隙耦合馈电、上层贴片、并馈网络等措施设计了宽带多层微带阵列天线。在等效电路分析基础上,结合仿真验证,分析了关键参数对天线单元阻抗匹配的影响,得出了单元最佳结构尺寸。采用了灵活的等功分并馈网络实现了8×8布局、45°极化的微带阵列天线。仿真和实测结果表明:电压驻波比VSWR<2的阻抗带宽达到48.8%,半功率波束宽度HPBW>9.2°时增益大于18 dB,交叉极化电平低于-22 dB,同时具备较深的零深、较低的副瓣电平。     

缝耦合微带双贴片天线阻抗和辐射特性

本文提出了将阵列单元由单贴片改成缝耦合双贴片的形式。利用并矢Ｇｒｅｅｎ函数和谱域矩量法分析了单贴片及缝耦合双贴片天线的输入阻抗。考虑了阵列天线的馈电网络中不均匀性的影响，根据解积分方程所得出的微带天线贴片表面电流分布。计算出其方向图特性，结果表明，缝耦合双贴片两单元微带阵列天线的阻抗频带提高到普通两单元微带阵列天线频带的２．５倍，文中实验数据与理论计算结果吻合甚好。     

一种宽带圆极化微带天线阵的设计与制作

文章利用天线的等效电路模型,分析了展宽天线阻抗和轴比频带的原理.提出了利用Wilkonson功分移相器结合翻转容性馈电结构来展宽微带天线的阻抗带宽和轴比带宽的方法.设计了工作频率为1.268 GHz、轴比小于3 dB的相对带宽为44.4%、在此频带内驻波比小于1.5的天线单元;并利用这样的天线单元组成四元圆形阵列,制作了天线阵,测试结果为圆极化带宽为23.8%,驻波比小于1.5,增益大于8dB.     

耦合激励系数及对称振子阵列天线的有源方向图研究

为了深入探讨相控阵天线单元间的耦合对阵中单元方向图的影响,以阵列天线单元S参数为基础,给出了阵列天线单元的耦合激励系数计算公式,利用阵列天线单元间的耦合激励系数分析计算阵中单元的有源辐射方向图.同时利用矩量法分析由偶极子单元组成的阵列,并把阵列中每个单元的感应电流幅度和相位与耦合激励系数的幅度和相位进行比较,二者数据基本一致.矩量法计算的单元有源方向图与本文提出方法的计算结果吻合良好,验证了本文给出的阵列耦合激励系数及阵列天线阵中单元有源方向图计算方法的可靠性.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks