Optimization of MEMS capacitive accelerometer

A micro machined accelerometer based on an area variation capacitive sensing for more applications was developed, in this case, we will describe and improve in this work the efficacity as well as the sensitivity of a capacitive accelerometer based on an area of variation capacitive sensing considered as a micro system electro mechanical (MEMS) available and realizable. However, the simulation was performed using MATLAB as software used in complicated situation with an optimization of the several parameters of accelerometer and a single direction, which is consisted with mobile fingers and fixed fingers, as two springs which ensures the damping of the system. The general concept, main design considerations and performance of the resulted accelerometer was optimized and elaborated in order to obtain a good improvement.     

微机械电容式加速度计检测电路设计

通过对MEMS电容式加速度计的差分电容检测电路优缺点的比较,结合直流充放电检测方法和交流测量方法的优点,设计了微分检测电路,用方波作为载波。该电路由方波信号发生器、微分电路、全波整流电路和滤波电路组成。经试验验证:可检测到10-16F的差分电容,且其非线性度小于±1%FS,可作为MEMS电容式加速度计的后续处理电路。     

A MEMS sandwich differential capacitive silicon-on-insulator accelerometer

A differential capacitive accelerometer with simple process is designed, simulated, and fabricated. To achieve a precision structure dimension with fewer processing steps, the silicon device layer transfer technology is being used to built a sandwich accelerometer based on a silicon-on-insulator (SOI) wafer, which was assembled by glass-si-glass multilayer anodic bonding. Deep reactive ion etching is being used to define symmetric beams and large mass block of equal thickness together in SOI device layer (up to 100 μm) in a single step to avoid alignment error in double side process. An actual accelerometer which is designed for 50 g measure range is fabricated with six lithography steps. Measurement results show 0.1166 V/g sensitivity and 0.022 % nonlinearity error in ±1 g gravity static response test. The accelerometer also provides a power spectrum less than 10.49 μVrms/Hz^1/2 (89.97 μg/Hz^1/2) in a non-isolated laboratory environment with a capacitive interface circuit.     

Fabrication of a MEMS capacitive accelerometer with symmetrical double-sided serpentine beam-mass structure

This paper presents a symmetrical double-sided serpentine beam-mass structure design with a convenient and precise process of manufacturing MEMS accelerometers. The symmetrical double-sided serpentine beam-mass structure is fabricated from a single double-device-layer SOI wafer, which has identical buried oxides and device layers on both sides of a thick handle layer. The fabrication process produced proof mass with though wafer thickness (860 μm) to enable formation of a larger proof mass. Two layers of single crystal silicon serpentine beams with highly controllable dimension suspend the proof mass from both sides. A sandwich differential capacitive accelerometer based on symmetrical double-sided serpentine beams-mass structure is fabricated by three layer silicon/silicon wafer direct bonding. The resonance frequency of the accelerometer is measured in open loop system by a network analyzer. The quality factor and the resonant frequency are 14 and 724 Hz, respectively. The differential capacitance sensitivity of the fabricated accelerometer is 15 pF/g. The sensitivity of the device with close loop interface circuit is 2 V/g, and the nonlinearity is 0.6 % over the range of 0–1 g. The measured input referred noise floor of accelerometer with interface circuit is 2 μg/√Hz (0–250 Hz).     

高精度电容式MEMS加速度计系统设计

在传统Σ-Δ架构基础上,引入了低精度高速模/数转换器(ADC),将前置放大器输出的模拟电压信号转换为数字信号,有利于简化电容式微电子机械系统(MEMS)加速度计系统模拟接口电路设计.在嵌入ADC的MEMS加速度系统中,采用过采样平均数字算法对信号进行估计,有效降低系统对前置放大器噪声性能的需求,利于实现低功耗和高精度的设计目标.仿真结果表明:与未采用过采样平均技术相比,当前置放大器输出等效噪声大于1μV/Hz时,系统的信噪比(SNR)提高了约10dB.     

微机械电容式加速度计读出电路研究与设计

为了提高电容式MEMS加速度计测量精度,设计了一种应用于MEMS加速度计微弱信号读出电路。读出电路由T型阻容网络放大电路、模拟开关解调电路和四阶带通滤波电路组成,通过Multisim软件仿真分析各模块电路原理并确定影响读出电路的主要因素,进一步优化确定元器件最佳参数,最后制作出PCB电路板并开展实验测试,实验结果表明微弱信号检测准确率达90%以上,能很好满足电容式MEMS加速度计微弱信号检测要求,同时该读出电路具有尺寸小、易调节、易于ASIC集成等特点,在微机械仪表的微小电容检测中有较高的实用价值。     

基于MEMS的微电容式无线加速度传感器的研究

介绍了一种基于MEMS技术制作的微电容式无线加速度传感器的设计与实现。研究了无线加速度传感器的整体设计方案,给出了硬件电路设计和软件设计过程,并实现了原型产品的调试与制作。为验证原型产品的有效性,将其安装在实际桥梁上进行振动测试,给出了数据分析计算结果。     

MEMS加速度计信号光电检测与电容检测的噪声分析

在高精度MEMS扭摆式加速度计电容检测和光电检测实现原理的基础上,分析了该加速度计热机械噪声和电学噪声特性.该加速度计结构在品质因数Q=1和Q=85时,热机械噪声分别为2.4μgn/根号Hz和0.28 μgn/根号Hz.对于电学噪声,电容检测的电学噪声为3.27 μgn/根号Hz,光电检测在只考虑电学噪声时能分辨的最小加速度可达0.05 μgn.对比得出对于扭摆式加速度计结构,光电检测具有比电容检测更小的系统总噪声.     

高量程加速度传感器在测试中的失效分析

通过在不同测试环境对高量程加速度传感器进行测试,并对传感器在测试中出现的失效进行分析,在实验室环境测试中出现的主要失效模式为键合引线的脱落和微梁的断裂,其原因是不同金属的引线键合强度较低;重复性的冲击加速了材料的疲劳.在实弹测试环境测试中出现的传感器失效原因主要足在侵彻测试中传感器芯片与侵彻信号中高频分量发生共振导致过...     

Design and optimization of fully differential capacitive MEMS accelerometer based on surface micromachining

In this paper, design and simulation of a single-axial, capacitive, fully differential MEMS accelerometer based on surface micromachining with two proof masses is presented. So far, most surface micromachined capacitive accelerometers offered, employed differential interface circuits to measure capacitor variations. However, in the presented structure, the possibility of fully differential design is realized by dividing the proof mass to two electrically isolated parts that are located on a silicon nitride layer. By utilizing two proof masses and altering outputs and stimulation voltage, parasitic capacitor is reduced and the sensitivity is increased. Moreover, some sensor capacitors are embedded inside the proof mass, so that sensitivity could be increased in the limited area and electrode length could be reduced. Furthermore, analytic equations are derived to calculate the sensitivity, as well to optimize the sensor structure. The designed sensor has been simulated and optimized using COMSOL Multiphysics, where the simulation results show the mechanical and capacitive sensitivity of 29.8 nm/g and 15.8 fF/g, respectively. The sensor size is 1 mm × 1 mm that leads to excellent performance, regarding to the defined figure of merit.

     

Design,modelling and system level simulations of DRIE-based MEMS differential capacitive accelerometer

Microsystem Technologies - The paper presents design, analytical modelling and system level simulations of a highly sensitive single-axis in-plane Micro-Electro-Mechanical-Systems (MEMS)...     

Thermal drift analysis using a multiphysics model of bulk silicon MEMS capacitive accelerometer

An interpretation of the thermal drift of the bulk silicon MEMS capacitive accelerometer using multiphysics analysis is proposed in this paper. Stress, strain, electrostatics, thermal and structural interactions are simulated based on the finite element method. The thermal drift is generated by both the stiffness asymmetry of the U-springs of the structure and relative displacement caused by the mismatch in thermal expansion coefficients between the Pyrex glass substrate and heavily boron-doped silicon structure, neither of which is dispensable. Although the layout design is symmetrical, the asymmetric widths of the U-springs, which cause stiffness asymmetry, are observed by scanning electron microscopy. To achieve a fast and feasible simulation, we divide the model into two components with different configurations. During the simulation, boundary conditions are carefully set up according to the fabrication process. A series of experiments is designed to verify the result, including a temperature experiment from −40 to 100 °C and DC voltage polarity experiment. To verify the conclusion, a new layout design that gradually increases the width of the U-springs without changing any other dimension is simulated, fabricated, and tested. The simulation and experiment results are compared and discussed.     

Retraction Note: A new structure and modeling of a three-axis MEMS capacitive accelerometer with high dynamic range and sensitivity

Microsystem Technologies -     

RETRACTED ARTICLE: A new structure and modeling of a three-axis MEMS capacitive accelerometer with high dynamic range and sensitivity

Microsystem Technologies - In this paper, a three-axis capacitor accelerator has been analyzed, modeled and optimized using micro-electromechanical systems technology. In the proposed structure,...     

基于厚膜混合集成的电容式加速度传感器

为了减小电容式加速度计的体积,提高检测精度、扩展应用范围,采用厚膜混合集成工艺,将检测电路和电容式加速度计敏感单元集成于一体。详细介绍了厚膜混合集成工艺的版图设计和制作过程,并介绍了制作工艺中的各道工序。用UP-16封装形式,对厚膜混合集成电容式加速度计进行了封装。经过与原电路比较后可知经厚膜混合集成后,体积大大减小,经封装后通过金属外壳接地,提高抗干扰能力,经测试,其测试精度能提高1—2个数量级。     

Superior performance area changing capacitive MEMS accelerometer employing additional lateral springs for low frequency applications

Microsystem Technologies - This paper introduces an effective and efficient microstructure of a differential area changing capacitive accelerometer to ensure low cross-axis sensitivity, high...     

一种双轴电容式微机械加速度计

提出一种双轴电容式微机械加速度计的结构形式.采用一个质量块敏感两个正交方向的加速度,设计的弹性支撑结构巧妙地实现了正交方向的解耦,且结构稳定性好,以梳齿电容实现差动的静电驱动、电容检测.利用MATLAB软件对敏感结构参数、性能参数进行了计算、分析,用ANSYS仿真软件对敏感结构进行了静态和模态分析,从理论上验证了所提出的双轴电容式微机械加速度计整体结构的可行性.     

微电容加速度计系统的设计

为了在总体上把握硅微加速度计的设计,建立了叉指式硅微加速度计的机械模型,研究了全差分二阶∑-ΔADC接口检测电路提取加速度信号,优化了开关电容电路来检测微小电容变化量,运用微机电专用设计软件CoventorWare对系统的机电混合模型进行仿真,并给出数字和模拟的分析结果,为加速度计系统的机械部分和电路部分的设计提供整体的更接近实际的设计参考。     

微机电加速度计的六位置标定

加速度计是惯性导航系统测量载体加速度和影响惯性导航系统精度的主要元器件.为提高惯性导航系统的精度,在使用加速度计以前需要进行加速度计的标定测试[1].主要介绍了微机电(Micro Electro Mechanical Systems,简称MEMS)加速度计的六位置标定法,以便从MEMS加速度计的误差模型中分离出MEMS加速度计的各项标定参数.这些参数包括MEMS加速度计的标度因数、零位漂移以及安装误差系数.并且在得到MEMS加速度计的各项标定参数后将其封装在C函数中进行了验证实验.实验结果表明MEMS加速度计的六位置标定法的原理简单并且在工程应用中容易实现,所得到的MEMS加速度计的输出不但反映了MEMS加速度计的实际输出,而且使MEMS加速度计的线性度得到改善.     

Numerical simulation and modelling of a novel MEMS capacitive accelerometer based microphone for fully implantable hearing aid

Microsystem Technologies - The present work proposes a novel MEMS capacitive accelerometer based microphone with enhanced sensitivity. The accelerometer design is simulated in COMSOL MULTIPHYSICS...