Far-red-emitting YAl3(BO3)4:Cr3+ phosphors with excellent thermal stability and high luminescent yield for plant growth LEDs

Phosphors-converted LEDs (pc-LEDs) are excellent artificial light sources for indoor plant cultivation, in which the far-red-emitting component (700−780 nm) plays an important role in regulating the photomorphogenesis of plants. Accordingly, highly efficient and thermally stable far-red-emitting phosphors are indispensable for developing high-performance plant cultivation pc-LEDs. Herein, far-red-emitting YAl₃(BO₃)₄:Cr³⁺ (YAB:Cr³⁺) phosphors were synthesized by solid-state reaction, and their photoluminescence characteristics, thermal quenching, quantum yield (QY), and application in pc-LEDs were systematically investigated. The YAB:Cr³⁺ phosphor has an intense broadband absorption to the blue light, simultaneously exhibiting the sharp-line ²E emission and the broadband ⁴ T₂ emission of Cr³⁺ with a QY of ~86.7%. The far-red broadband emissions of YAB:Cr³⁺ centered at ~735 nm show a high resemblance to the active-state (P_FR) absorption of plant phytochrome. Moreover, the YAB:Cr³⁺ phosphor shows the thermally enhanced luminescence at temperatures of 303−393 K and the near-zero thermal quenching up to 423 K. The anomalous thermal enhancement is attributed to the temperature-dependent repopulation between ²E and ⁴ T₂ states. Finally, a pc-LED device was fabricated with the YAB:Cr³⁺ phosphor and blue chip, exhibiting the light out power of ~50.6 mW and energy conversion efficiency of ~17.4% at 100 mA drive current, respectively. The exceptional PL features including suitable excitation/emission wavelengths, suppressed thermal quenching and high QY make YAB:Cr³⁺ phosphors very promising for applications in plant growth pc-LEDs.     

A novel far-red phosphors Li2ZnTi3O8:Cr3+ for indoor plant cultivation:Synthesis and luminescence properties

A novel far-red phosphors Li₂ZnTi₃O₈:Cr³⁺ were successfully synthesized via the conventional solid-state method. The structural characteristics, luminescence properties and concentration quenching of the Li₂ZnTi₃O₈:Cr³⁺ phosphors were investigated systematically. Under the excitation at 360 nm and 468 nm, the Li₂ZnTi₃O₈:Cr³⁺ phosphors displays the emission spectra in the range from 600 nm to 850 nm. The far-red emission centered at 735 nm was attributed to the spin-forbidden ²E→⁴A₂ transition of Cr³⁺ ions. The research results of this paper indicate that the phosphors Li₂ZnTi₃O₈:Cr³⁺ has prospective applications in indoor plant cultivation.     

Trap engineering in ZnGa2O4:Tb3+ through Bi3+ doping for multi-modal luminescence and advanced anti-counterfeiting strategy

Optical information encryption based on luminescence materials have received much attention recently. However, the single luminescence mode of the luminescence materials greatly limits its anti-counterfeiting application with high safety level. Here, a series of luminescence materials of Tb³⁺ and Bi³⁺ co-doped ZnGa₂O₄ phosphors with great correspondence in photoluminescence (PL), persistent luminescence (PersL), and thermoluminescence (TL) modes was synthesized by the conventional solid-phase method for the application in multi-modal anti-counterfeiting fields. Under the excitation of 254 nm, ZnGa_1.99O₄:0.01 Tb³⁺, yBi³⁺ (y = 0.001,0.002) sample exhibited a broad blue emission band (the transition from [GaO₆]) at 440 nm and the characteristic emission peaks of Tb³⁺ at 495 nm, 550 nm, 591 nm and 625 nm, corresponding to the transitions of ⁵D₄-⁷F_n (n = 6, 5, 4, 3), respectively. Interestingly, the co-doping of Bi³⁺ ions improve the crystallinity and particle size of the phosphor, subsequently enhanced the PL intensity of Tb³⁺ to 6 times that of Tb³⁺ singly doped ZnGa₂O₄ phosphor. Further, the flexible films with multi-modal luminescence properties have been fabricated through the unique TL and PersL characteristics of ZnGa₂O₄: Tb³⁺, Bi³⁺ phosphors, including “Optical information storage film”, “snowflake and characters” and “QR code”. Moreover, a set of optical information encryption is obtained by combining ZnGa₂O₄:Tb³⁺, Bi³⁺ phosphor and red emitting phosphor. The results indicate that ZnGa₂O₄:Tb³⁺, Bi³⁺ phosphor with multi-modal stimulus response can be expected to be potentially used in the applications of optical information storage and anti-counterfeiting fields.     

Novel color tunable LaCaGaO4:Bi3+,Eu3+ phosphors for high color rendering warm white LEDs

A series of LaCaGaO₄:xBi³⁺,yEu³⁺ (x = 0.002–0.04, y = 0.02–0.45) phosphors with adjustable emission colors were synthesized by high-temperature solid-state reaction. The samples were identified as pure phases by X-ray diffraction and Rietveld refinement, and the crystal structures were analyzed in detail. The LaCaGaO₄:xBi³⁺ phosphor shows an intense blue emission under near-ultraviolet excitation, originating from the ³P₁ → ¹S₀ transition. The spectrum analysis reveals that the Bi³⁺ ions occupy two luminescence centers in the LaCaGaO₄ host and that energy transfer can occur. A model of the energy transfer between the Bi³⁺ and Eu³⁺ ions was also created and studied in detail. As the Eu³⁺-concentration increased, the emission color of the LaCaGaO₄:0.005Bi³⁺,yEu³⁺ phosphor changed from blue to pink to red. In addition, the fluorescence lifetime, quantum yield, thermal stability, and other properties of the phosphors were characterized and analyzed. Finally, two white light-emitting diode devices with R_a values of 96.6 and 95 and correlated color temperatures of 4578 and 3324 K were fabricated, indicating the potential of phosphors for warm white lighting applications.     

Mn4+-related photoemission enhancement via energy transfer in La2MgGeO6:Dy3+, Mn4+ phosphor for plant growth light-emitting diodes

A double perovskite-type substrate of La₂MgGeO₆ (LMGO) was successfully synthesized via a high-temperature solid-state reaction method and was codoped with Mn⁴⁺ and Dy³⁺ to form a new deep-red phosphor (LMGO:Mn⁴⁺,Dy³⁺) for artificial plant growth light-emitting diodes (LEDs). This extraordinary phosphor can exhibit strong far-red emission with a maximum peak at 708 nm between 650 and 750 nm, which can be ascribed to the ²E_g → ²A_2 g spin-forbidden transition of Mn⁴⁺. The X-ray diffraction (XRD) patterns and high-resolution transmission electron microscopy (HRTEM) clarified that the La³⁺ sites in the host were partly replaced by Dy³⁺ ions. Moreover, we discovered energy transfers from Dy³⁺ to Mn⁴⁺ by directly observing the significant overlap of the excitation spectrum of Mn⁴⁺ and the emission spectrum of Dy³⁺ as well as the systematic relative decline and growth of the emission bands of Dy³⁺ and Mn⁴⁺, respectively. With the increase in the activator (Mn⁴⁺) concentration, the relationship between the luminescence decay time and the energy transfer efficiency of the sensitizer (Dy³⁺) was studied in detail. Finally, an LED device was fabricated using a 460 nm blue chip, and the as-obtained far-red emitting LMGO:Mn⁴⁺,Dy³⁺ phosphors for Wedelia chinensis cultivation. As expected, the as-fabricated plant growth LED-treated Wedelia chinensis cultured in the artificial climate box with overhead LEDs demonstrated that after 28 days of irradiation, the average plant growth rate and the total chlorophyll content were better than those of specimens cultured using the commercial R-B LED lamps, indicating that the as-prepared phosphor could have a potential application in the agricultural industry.     

Bi3+/Mn4+ co-doped dual-emission phosphors for potential plant lighting

Developing environment-friendly dual-emission phosphors of both blue–cyan and deep-red lights is desirable for the utilized indoor plant lighting research. Notably, the naked 6s and 6p Bi³⁺ ions are sensitive to the lattice sites, which emit from Ultraviolet (UV) to red lights in various crystal compounds. Meanwhile, the ²E → ⁴A_2g transition of Mn⁴⁺ ions promises its deep-red light emissions, which satisfies the demand for specific wavelength lights for plants growth. Hence, a Bi³⁺/Mn⁴⁺ co-doped Sr₂LaGaO₅: Bi³⁺, Mn⁴⁺ (SLGO:Bi³⁺:Mn⁴⁺) phosphor was finally synthesized. The phase, micromorphology and luminescent properties were systematically evaluated. Upon excitation at 350 nm light, dual emissions of both blue–cyan (470 nm) and deep-red (718 nm) lights were observed. Besides, due to the pronounced photoluminescence (PL) spectral overlap between Bi³⁺ and Mn⁴⁺ ions, a potential energy transfer process from Bi³⁺ to Mn⁴⁺ ions was confirmed. The relative PL intensities between Bi³⁺ and Mn⁴⁺ ions can be tuned just by adjusting the Mn⁴⁺ ion concentration. Besides, Li⁺ co-doping has been evidenced to improve the deep-red emissions (718 nm) of SLGO:0.005Mn⁴⁺ due to charge compensation and rationally designed lattice distortion, together with the improved thermal stability. Finally, the emissions of SLGO:Bi³⁺, Mn⁴⁺, Li⁺ phosphor suit properly with the absorption of the four fundamental pigments for plant growth, indicating that the prepared phosphorescent materials may have a prospect in plant light-emitting diodes lighting.     

Synthesis and luminescence properties of broad band greenish-yellow emitting LnVO4:Bi3+ and (Ln1, Ln2)VO4:Bi3+ (Ln=La,Gd and Y) as down conversion phosphors

Ln_0.97VO₄:Bi_0.03³⁺ and (Ln1_0.5, Ln2_0.5)_0.97VO₄:Bi_0.03³⁺ (where Ln=La, Gd and Y) down conversion (DC) phosphors have been synthesized by a novel co-precipitation technique followed by heat-treatment. The influence of lanthanide host composition on crystal structure, luminescence and pertinent optical properties have been investigated by various spectroscopic techniques: XRD, SEM, FT-IR and PL. The produced phosphors have exhibited an intense greenish-yellow emission, upon UV-irradiation. A broad band excitation (280–350 nm) ascribed to ¹S₀→³P₁ and an intense broad greenish-yellow emission band (400–700 nm) attributed to ³P₁→¹S₀ transition, owing to Bi³⁺ ions have been observed. PL spectra revealed that the phosphors with Gd – containing host has exhibited a better luminescence among the others. The luminescence intensity sequence in descending order was as follows: GdVO₄→(Gd, Y)VO₄→(La, Gd)VO₄→(La, Y)VO₄→YVO₄→LaVO₄: Bi³⁺. These phosphors can efficiently convert the UV-photons in a broad range from 280–350 nm of feckless UV-rays into the absorbable visible emission for c-Si solar cells, based on the spectral matching phenomena. In view of the better fluorescence and pertinent optical properties, the phosphor with composition Gd_0.97VO₄: Bi_0.03³⁺ is a suggestible sought UV-absorbing spectral converter, in its thin transparent DC form for c-Si solar cells for better harvesting the solar energy.     

Dual-mode optical thermometry based on Bi3+/Eu3+ co-activated BaGd2O4 phosphor with high sensitivity and signal discriminability

A series of BaGd₂O₄:Bi³⁺,Eu³⁺ phosphors with dual-emitting centers were prepared by high-temperature solid-state method. X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive spectroscopy (EDS), fluorescence spectroscopy, lifetime decay curve and variable temperature emission spectroscopy were used to systematically study the structure, luminescence performance and temperature characteristics. Under ultraviolet (UV) excitation, the BaGd₂O₄:Bi³⁺,Eu³⁺ phosphor showed a broad-band emission in the blue region corresponding to transitions of Bi³⁺ ions and the sharp red light emission corresponding to Eu³⁺ ions. The Bi³⁺ and Eu³⁺ ion emission peaks were well-separated, which meets a prerequisite for efficient temperature signal resolution measurement. The fluorescence intensity ratio (FIR) technique was used to measure the different temperature response characteristics between Bi³⁺ blue emission and Eu³⁺ red emission. When the temperature varies from 293 K to 473 K, the relative temperature sensitivity (S_r) of BaGd₂O₄:Bi³⁺,Eu³⁺ phosphors is obtained, was determined as 1.0182%K⁻¹. In addition to calculating the relative sensitivity by FIR technology, we can also obtain the value of S_r through experiments and formulas related to the decay life, and found to be 1.0651%K⁻¹. Therefore, BaGd₂O₄: Bi³⁺,Eu³⁺ phosphor is an excellent non-contact optical temperature measurement material.     

Plant habitat-conscious phosphors: Tuneable luminescence properties of Dy3+-doped Ca8ZnY(PO4)7 phosphors by co-dopants Mg2+ and B3+

Outdoor lighting and other lighting systems can disrupt natural plant growth habits. Thus, LED lighting that is not detrimental to plant growth is required. In our study, Dy³⁺-doped Ca₈ZnY(PO₄)₇:Dy³⁺ phosphor with enhanced luminescence properties caused by the co-dopants Mg²⁺ and B³⁺ were synthesised. The samples had multiple excitation peaks, indicating they are excited by either near-ultraviolet (n-UV) or blue chips. All samples exhibited bright narrow yellow and blue emission corresponding to the transitions of Dy³⁺ ions with ⁴F_9/2→⁶H_13/2 and ⁴F_9/2→⁶H_13/2, respectively. Moreover, doping with Mg²⁺ and B³⁺ enhanced the luminescence intensity, reaching 113.6 and 119.7%, respectively. In addition, the luminescence emission intensity at 150 °C was maintained at approximately 95% of the initial value at 25 °C, and its thermal stability increased by 123%. Devices assembled with an n-UV chip (388 nm) and the as-obtained CZMYP:Dy³⁺ phosphor emitted a bright warm white light and simulated outdoor dark lighting for tobacco cultivation, indicating that the as-prepared phosphor is an excellent candidate material for plant habitat-conscious phosphors.     

Broad band down conversion from ultra violet light to near infrared emission in YVO4:Bi3+, Yb3+ as spectral conversion phosphor for c-Si solar cells

Vanadate based down conversion phosphors have been synthesized by a novel co-precipitation technique. The effect of pH on crystal structure, particle size, morphology and luminescence properties were investigated by XRD, SEM-EDAX, FT-IR and PL measurements. As different from other reports (blue, green emission) the produced phosphors have shown greenish–yellow emission, owing to their fine particle size. A broad band excitation (280–370 nm), ascribed to ¹S₀→³P₁ and an intense greenish–yellow band emission (410–700 nm) attributed to ³P₁→¹S₀ transition of Bi³⁺ were observed. A strong greenish–yellow emission was measured with 3 mol. % of Bi³⁺ ions, as an optimum dopant concentration. The characteristic NIR emission of Yb³⁺, owing to ²F_5/2→²F_7/2 was recorded at 1039 nm, as a result of efficient energy transfer from Bi³⁺ to Yb³⁺, ions. The phosphors with chemical composition as Y_0.96VO₄: Bi_0.03³⁺, Yb_0.01³⁺ and Y_0.87VO₄: Bi_0.03³⁺,Yb_0.1³⁺ are suggested to be the novel candidates for the efficient down conversion of broad band ultra violet (UV) light into visible/near infrared (NIR) emission, as DC layers on c-Si solar cells for better harvesting the solar spectrum via spectral matching phenomena.     

Enhanced luminescence and energy transfer performance of double perovskite structure Gd2MgTiO6:Bi3+, Mn4+ phosphor for indoor plant growth LED lighting

Deep-red light emitting phosphors are widely used in LEDs for indoor plant growth because of the critical role played by red light in plant growth. The luminescence properties of deep-red phosphors are still not well understood at present. An energy transfer strategy is a common and effective method to improve luminescence properties. In principle, the energy transfer process may occur when the sensitizer's emission spectra overlap with the activator's excitation spectra. In this work, Bi³⁺ and Mn⁴⁺ were incorporated into the matrix of Gd₂MgTiO₆ as sensitisers and activators, respectively. Mn⁴⁺ ions tend to occupy the [TiO₆] octahedral site and the Bi³⁺ ions are expected to substituted in the site of Gd³⁺. The energy transfer process from Bi³⁺ to Mn⁴⁺ was realised and the photoluminescence (PL) intensity of Mn⁴⁺ increased with the doping content of Bi³⁺. Upon excitation at 375 nm, the PL intensity of Mn⁴⁺ increased to 116.4% when the doping concentration of Bi³⁺ reached 0.3%. Finally, the pc-LED devices were prepared by a Gd₂MgTiO₆:Bi³⁺, Mn⁴⁺ phosphor. The high red luminescence indicated that this phosphor has potential applications in indoor LED lighting.     

Synthesis,Crystal Structure,and Enhanced Luminescence of Garnet‐Type Ca3Ga2Ge3O12:Cr3+ by Codoping Bi3+

Garnet‐type compound Ca₃Ga₂Ge₃O₁₂ and Cr³⁺‐doped or Cr³⁺/Bi³⁺ codped Ca₃Ga₂Ge₃O₁₂ phosphors were prepared by a solid‐state reaction. The crystal structure of Ca₃Ga₂Ge₃O₁₂ host was studied by X‐ray diffraction (XRD) analysis and further determined by the Rietveld refinement. Near‐infrared (NIR) photoluminescence (PL) and long‐lasting phosphorescence (LLP) emission can be observed from the Cr³⁺‐doped Ca₃Ga₂Ge₃O₁₂ sample, and the enhanced NIR PL emission intensity and LLP decay time can be realized in Cr³⁺/Bi³⁺ codped samples. The optimum concentration of Cr³⁺ in Ca₃Ga₂Ge₃O₁₂ phosphor was about 6 mol%, and optimum Bi³⁺ concentration induced the energy‐transfer (ET) process between Bi³⁺ and Cr³⁺ ions was about 30 mol%. Under different excitation wavelength from 280 to 453 nm, all the samples exhibit a broadband emission peaking at 739 nm and the intensity of NIR emission increases owing to the ET behavior from Bi³⁺ to Cr³⁺ ions. The critical ET distance has been calculated by the concentration‐quenching method. The thermally stable luminescence properties were also studied and the introduction of Bi³⁺ can also improve the thermal stability of the NIR emission.     

Improving the luminescence and afterglow properties of Mg3Y2Ge3O12:Cr3+ by co-doping Bi3+

Generally, the emission intensity and afterglow of the near infrared phosphors can be improved by co-doping the sensitizer. In this work, Bi³⁺ ions as sensitizer are introduced into the near infrared phosphor Mg₃Y₂Ge₃O₁₂:Cr³⁺, and the luminescence properties are investigated. According to the principle of radius adaptation, Bi³⁺ ions would occupy eight coordinates in the host instead of Y³⁺ and Mg²⁺. Through structural refinement, theoretical calculation and experimental phenomena, there are two kinds of luminescent sources for Bi³⁺ ions, which come from ³P₁ → ¹S₀ (441 nm) and MMCT (330 nm), respectively. In addition, the substitution of Bi³⁺ for Mg²⁺ will result in inequivalent substitution forming defects (Bi_Mg·), and the trap depth is 0.55 eV. For Bi³⁺ and Cr³⁺ co-doped Mg₃Y₂Ge₃O₁₂, there are two factors can that can affect the luminescent properties of Cr, which are energy transfer and defects. The samples are obtained with three times the original emission intensity with the introduction of defects. At the same time, Bi³⁺ ions capture electrons to form new electron traps Bi²⁺ (Bi³⁺ + e^-) and the trap depth is 0.81 eV. Therefore, under the action of two traps Bi_Mg· and Bi²⁺ (Bi³⁺ + e^-), the afterglow characteristics of the samples are improved and the time can reach 1.5 h.     

Luminescence of MgAl2O4 and ZnAl2O4 spinel ceramics containing some 3d ions

The luminescence properties of ceramic phosphors based on two spinel hosts MgAl₂O₄ and ZnAl₂O₄ doped with manganese ions have been studied. It has been found that the spectral properties of these phosphors can be strongly varied by changing synthesis conditions. Both types of doped ceramic spinel can serve as efficient Mn²⁺ green-emitting phosphors having peak emissions at 525 and 510 nm, respectively. Mn-doped MgAl₂O₄ spinel can also be prepared as an efficient Mn⁴⁺ red-emitting phosphor having peak emission at ~651 nm by using specific temperatures of heat treatment in air. It has also been shown that the conversion of Mn²⁺ to Mn⁴⁺ and viсe versa, as well as the coexistence of Mn²⁺ green and Mn⁴⁺ red emissions, can be accomplished by properly chosen annealing conditions of the same initially synthesized MgAl₂O₄:Mn sample. Manganese doped MgAl₂O₄ spinel with an optimal intensity ratio of green and red emissions can be a promising single-phase bicolor phosphor suitable for the development of warm white phosphor-converted LED lamps. On the other hand, it has been determined that perfectly normal ZnAl₂O₄ spinel cannot be doped with Mn⁴⁺ ions in contrast to partially inverse MgAl₂O₄ spinel. However, ZnAl₂O₄ samples unintentionally doped with impurity Cr³⁺ ions show emission spectra in the far-red region with well pronounced R, N and vibronic lines of Cr³⁺ luminescence due to the perfect normal spinel structure of synthesized ZnAl₂O₄ ceramics. Also, by partially substituting Al³⁺ cations for Mg²⁺ in ZnAl₂O₄ there is an opportunity to obtain Mn⁴⁺ doped or Mn⁴⁺/Cr³⁺ codoped far-red emitting phosphors which can be suitable for indoor plant growth lighting sources.     

Improvement the near-infrared luminescence properties of double perovskite phosphor La(Mg0.5Sn0.5In0.5Sc0.5)0.5O3:Cr3+ via co-doping Yb3+

In recent years, the broadband near-infrared (NIR) spectroscopy technology has been widely used in the field of nondestructive testing. However, these existing NIR phosphors showed relatively short emission wavelengths, narrower half-maximum full-width (FWHM), and narrower half-peak widths, importantly, few phosphors presented the emission from 950 nm to 1100 nm. In order to solve these problems, the Yb³⁺/Cr³⁺ ions codoped La(Mg_0.5Sn_0.5In_0.5Sc_0.5)_0.5O₃ (LMSIS) was synthesized by the solid-state method, and the emission spectrum of LMSIS:Cr³⁺ can be extended to the NIR long-wave region due to the energy transfer of Yb³⁺ and Cr³⁺, and the thermal stability of the phosphor can be improved due to the inherent temperature stability of the Yb³⁺ f-f transition. The NIR phosphor converted light emitting diodes (pc-LEDs) were fabricated by combining the LMSIS:0.003Cr³⁺, 0.0015Yb³⁺ with blue LED chip, which can be expected to be used in the field of broadband near-infrared non-destructive detection.     

Energy transfer and color-tunable emission in Ba2Y2Si4O13:Bi3+,Eu3+ phosphors

Single-composition Ba₂Y₂Si₄O₁₃:Bi³⁺,Eu³⁺ (BYSO:Bi³⁺,Eu³⁺) phosphors with color-tunable and white emission were prepared by conventional high temperature solid-state reaction method. The structural and luminescent properties of these phosphors were thoroughly investigated through X-ray diffraction, photoluminescence, and decay curves. BYSO:Bi³⁺ phosphors show two excitation peaks at 342 and 373 nm, and give two emission peaks at 414 and 503 nm, respectively, indicating that there are two sites of Bi³⁺ in BYSO. The energy transfer from Bi³⁺ to Eu³⁺ was investigated in detail. Varied hues from blue (chromaticity coordinate [0.219, 0.350]) to white (0.288, 0.350) and orange-red light (0.644, 0.341) can be generated by adjusting the content of Eu³⁺. Pure white light emission (0.311, 0.338) can be obtained under the excitation of 355 nm in BYSO:3%Bi³⁺,20%Eu³⁺ phosphor. Besides, BYSO:Bi³⁺,Eu³⁺ phosphors exhibit distinct thermal quenching properties, whose emission intensity at 473 K is 82.6% of that at 298 K. Our results indicate that BYSO:Bi³⁺,Eu³⁺ may be applied as conversion phosphors for n-UV-based W-LEDs.     

A novel pale-yellow Ba2ZnGe2O7:Bi3+ phosphor with site-selected excitation and small thermal quenching

A novel pale-yellow Ba₂ZnGe₂O₇:Bi³⁺ phosphor with site-selected excitation and small thermal quenching was synthesized by conventional solid-state sintering. The crystal structure and luminescence properties have been investigated in detail for the first time using XRD patterns, photoluminescence spectra, diffuse reflection spectra, decay curves, and temperature-dependent emission spectra. The results reveal that the excitation spectrum of Ba₂ZnGe₂O₇:Bi³⁺ phosphor locates in the near-ultraviolet region of 300-400 nm, and its emission shows an obvious site-selective excitation phenomenon since Bi³⁺ ions occupy two different crystallographic sites in the Ba₂ZnGe₂O₇ host. When excited under 360 nm, the phosphors show a pale-yellow emission in the range of 400-700 nm with the maximum peaking at 520 nm, while when excited under 316 nm, the phosphors show a blue emission in the range of 400-700 nm with the maximum peaking at 480 nm. In addition, the emission of Ba₂ZnGe₂O₇:Bi³⁺ can also be easily controlled by changing the Bi³⁺ concentration. The Ba₂ZnGe₂O₇:Bi³⁺ phosphor has small thermal quenching, and its emission intensity only decreases by 2% at 200°C. The results indicate that this novel pale-yellow Ba₂ZnGe₂O₇:Bi³⁺ phosphor could be conducive to the development of white light-emitting diodes.     

Red-emitting enhancement of Bi4Si3O12:Sm3+ phosphor by Pr3+ co-doping for White LEDs application

In this account, Bi₄Si₃O₁₂:Sm³⁺ and (Bi₄Si₃O₁₂:Sm³⁺, Pr³⁺) red phosphors were prepared by solution combustion method fueled by citric acid at 900 °C for 1 h. The effects of co-doping Pr³⁺ ions on red emission properties of Bi₄Si₃O₁₂:Sm³⁺ phosphors, as well as the mechanism of interaction between Sm³⁺ and Pr³⁺ ions were investigated by various methods. X-ray diffraction (XRD) and Scanning electron microscopy (SEM) revealed that smaller amounts of doped rare earth ions did not change the crystal structure and particle morphology of the phosphors. The photoluminescence spectroscopy (PL) indicated that shape and position of the emission peaks of (Bi₄Si₃O₁₂:Sm³⁺, Pr³⁺) phosphors excited at λ_ex=403 nm were similar to those of Bi₄Si₃O₁₂:Sm³⁺ phosphors. The strongest emission peak was recorded at 607 nm, which was attributed to the ⁴G_5/2→⁶H_7/2 transition of the Sm³⁺ ion. The photoluminescence intensities of Bi₄Si₃O₁₂:Sm³⁺ phosphors were significantly improved by co-doping with Pr³⁺ ions and were maximized at Sm³⁺ and Pr³⁺ ions doping concentrations of 4 mol% and 0.1 mol%, respectively. The characteristic peaks of Sm³⁺ ions were displayed in the emission spectra of (Bi₄Si₃O₁₂:Sm³⁺, Pr³⁺) phosphors excited at respectively λ_ex=443 nm and λ_ex=481 nm (Pr:³H₄→³P₂, ³H₄→³P₀). This indicated the existence of Pr³⁺→Sm³⁺ energy transfer in (Bi₄Si₃O₁₂:Sm³⁺, Pr³⁺) phosphors.     

Broadband near-infrared double-perovskite phosphor Sr2ScTaO6:Cr3+, Yb3+ for NIR pc-LED applications

The broadband near-infrared (NIR) phosphor converted light emitting diode (NIR pc-LED) has garnered unprecedented attention due to its crucial role in NIR applications. However, there remains a scarcity of efficient broadband NIR luminescence materials capable of emitting NIR light with wavelengths greater than 800 nm. This study reports the synthesis, crystal structure and photoluminescence (PL) properties for double perovskite Sr₂ScTaO₆:Cr³⁺ phosphors which exhibit a broadband NIR emission in the 650–1250 nm range, peaking at∼815 nm with the full width at half maximum (FWHM) of 161 nm. The observed broadband emission arises from two distinct Cr³⁺ centers, namely Sc³⁺ and Ta⁵⁺ octahedral sites within the Sr₂ScTaO₆ structure, as demonstrated by luminescence and decay kinetic analysis. A significant enhancement of the thermal stability and a remarkable broadening of the FWHM (from 161 to 275 nm) are achieved by employing Yb³⁺ co-doping strategy. The efficient energy transfer from Cr³⁺ to Yb³⁺ was confirmed through emission and excitation spectra, as well as luminescence decay measurements. Finally, Sr₂ScTaO₆:Cr³⁺-Yb³⁺ phosphor was integrated with a 470 nm blue LED chip to fabricate a NIR pc-LED device, and its potential application in night vision was evaluated.     

Improved thermal stability of the near-infrared Al-modulated Zn3Ga2GeO8: Cr3+ phosphors for plant growth applications

The exploration of the high thermal stability near-infrared (NIR) phosphors is significantly crucial for the development of plant lighting. However, NIR phosphors suffer from the poor chemical and thermal stability, which severely limits their long-term operation. Here, the successful improvement of luminous intensity (149.5%) and thermal stability at 423 K of Zn₃Ga₂GeO₈ (ZGGO): Cr³⁺ phosphors is achieved for the introduction of Al³⁺ ions into the host. The release of carriers in deep traps inhibits the emission loss for the thermal disturbance. Furthermore, an NIR light emitting diodes (LEDs) lamp is explored by combining the optimized Zn₃Ga_1.1675Al_0.8GeO₈: 0.0325Cr³⁺ phosphors with a commercial 460 nm blue chip, and the emission band can match well with the absorption bands of photosynthetic pigments and the phytochrome (P_R and P_FR) of plants. The explored LEDs lamp further determines the growth and the pheromone content of the involved plants for the participation of the NIR emission originated from Cr³⁺ ions. Our work provides a promising NIR lamp as plant light with improved thermal stability for long-term operation.