Effects of phase transition on discharge properties of PLZST antiferroelectric ceramics

The effects of electric field‐induced phase transition on discharge properties of Pb_0.94La_0.04[(Zr_0.52Sn_0.48)_0.84Ti_0.16]O₃ antiferroelectric (AFE) ceramics were investigated. Due to the forward phase transition, high polarization and energy density are achieved. The backward phase transition results in nonlinear increase of current in underdamped circuit. The stored charge (14.2 μC under 40 kV/cm at 22°C) can be released completely in very short duration due to the low remanent polarization. With increasing temperature, the polarization and releasable energy decline. However, the current amplitude reaches maximum at 40°C, which is attributed to the backward phase transition. The maximum current and power density are as high as 143.8 A/cm² and 2.4 MW/cm³, which indicates the potential of the ceramics for pulsed capacitors.     

Co-optimization of microwave dielectric properties in Ba(Mg1/3Ta2/3)O3 complex perovskite ceramics through ordered domain engineering

It is an important subject to improve the temperature coefficient of resonant frequency (τ_f) and thermal conductivity (κ) of microwave dielectric ceramics without reducing the Qf value. Ordered domain engineering was applied to realize the previous objectives in Ba(Mg_1/3Ta_2/3)O₃ ceramics. With the increasing ordering degree from 0.835 to 0.897, the optimized Qf value was obtained. Meanwhile, near zero τ_f from 11.9 to 5.6 ppm °C⁻¹ was achieved, together with increased κ from 5.5 to 7.6 W m⁻¹ K⁻¹, and enhanced dielectric strength from 801 to 921 kV cm⁻¹. The noticeable ordered domain structure with large ordered domains (∼100 nm) and low-energy domain boundaries was revealed in Ba(Mg_1/3Ta_2/3)O₃. The consequent weakened phonon scattering rises the thermal conductivity. The increased bond covalency and oxygen distortion in ceramics with higher ordering degree were suggested as a cause of enlarged bandgap, which enhanced the dielectric strength. The reduced τ_f is dominated by the less “rattling” space of the cations in the ordered state by inducing more positive τ_ε. The reduced τ_f, optimized thermal conductivity, and Qf value in the present work indicate that the ordered domain engineering could open up a new direction for the optimization of microwave dielectric ceramics.     

On the coupled ferroelectric‐electrochromic effect of ε‐WO3

A reversible electrochromic effect has been observed for the first time in flame spray pyrolysis (FSP) processed ε‐WO₃ thin films without the use of an ion storage layer and an electrolytic layer. The dark coloration that appears upon the application of a voltage in films deposited on top of interdigitated gold electrodes is localized to the low voltage (?) electrode arm and it switches to the opposite arm upon a reversal of the polarity. Raman spectroscopy indicated that the coloration was not due to intercalation. It is argued here that the coloration is driven by the asymmetric ferroelectric properties of the ε‐WO₃ crystals and that this electrochromic reversibility is intrinsically coupled with the polarization switching of the device.     

Dielectric relaxation and electrical conduction in (BixNa1−x)0.94Ba0.06TiO3 ceramics

The dielectric relaxation and electrical conduction were investigated in (Bi_xNa_1?x)_0.94Ba_0.06TiO₃ (Abb. xBNBT6, x = 0.5, 0.495, 0.485, and 0.475) ceramics prepared by solid state reaction. With a decrease in x, the dielectric properties of the ceramics decreased, whereas the electrical conduction increased, resulting in a transition from insulator to oxide‐ions conductor. When x = 0.475, the ceramics exhibited large conductivity (~10^?3 S cm^?1 at 575°C) and low activation energy (~0.45 eV), indicating their potential application in solid oxide fuel cells. A mixed conduction mechanism with oxide‐ions, electrons, and holes was proposed. With a decrease in x from 0.495 to 0.475, it was found that the p‐type conduction was switched to n‐type conduction. The dielectric relaxation of the x = 0.495 sample was associated with short‐range hopping of oxygen vacancies. However, the dielectric properties of the x = 0.485 and 0.475 samples can be explained by Maxwell‐Wagner interface relaxation.     

Effect of the (Ba + Sr)/Ti ratio on the microwave‐tunable properties of Ba0.6Sr0.4TiO3 ceramics

The impact of the (Ba + Sr)/Ti (A/B) ratio on the microwave‐tunable characteristics of diffuse phase transition (DPT) ferroelectric Ba_0.6Sr_0.4TiO₃ (0.6‐BST) ceramics was investigated. The reduction in the lattice constant with increasing nonstoichiometry was attributed to introduced partial Schottky defects, i.e., and . The magnitude of the dielectric constant, ε′, at room temperature in the absence of an applied electric field was governed by the shift in the dielectric maximum temperature, T_m, because T_m was close to room temperature for the 0.6‐BST. The dielectric loss, tanδ, diminished as the ε′ decreased for 0.98≤A/B≤1.05, while the tanδ was much higher for A/B=0.95 having the greatest A‐site vacancy loading. The negatively charged and were mainly compensated by oxygen vacancies and likely partly compensated by holes, h^?, which contributed to the electrical conduction. The tunability, T, at 100 MHz was almost constant at 20%–25% for A/B≥1.00 despite the reduction of the ε′, whereas T decreased for A/B<1.00 to ca. 10% for A/B=0.95 having the greatest A‐site vacancy loading. The results implied that the for larger A/B values was more efficient in generating nucleation sites in the polar nanoregions (PNRs) than the for smaller A/B values, thereby providing greater dipole polarization. Consequently, the figure of merit, FOM, reached its maximum of 250 at A/B=0.9875, which was ca. 155% higher than that of the stoichiometric BST.     

Piezoelectric softening by Nb substitution in (Ba,Pb)ZrO3 ceramics

Donor doping is commonly applied for softening of the piezoelectric and dielectric properties and facilitation of polarization switching in the ubiquitous Pb(Zr,Ti)O₃ [PZT] ceramics. The origin of the donor‐dopant effects is not entirely clear. (Pb,Ba)ZrO₃ [PBZ] is a related ferroelectric material, its perovskite A‐site being partially occupied by the larger Ba⁺² cation, less prone to evaporation than Pb⁺², and the B‐site is occupied entirely by the valency‐stable Zr⁺⁴. Here we report on our studies of Nb⁺⁵ doping effects in (Pb,Ba)ZrO₃. Similarly, to past observations on La⁺³ and Nb⁺⁵ doped PZT, we find a strong reduction in relative density of PBZ when the doping is <0.5 atomic %. This is accompanied by lattice parameter reduction, enhanced PbO loss, smaller grain size and deterioration of dielectric, piezoelectric and polarization switching properties, the latter being opposite of expected softening effect. All those observations can be interpreted in terms of the Nb entering A‐site at small concentrations. This is supported by ab‐inito calculations and analysis of the possible defect reaction equations. The structure and microstructure of PBZ with Nb>0.2% are consistent with Nb⁺⁵ entering the B‐site and softening effects are observed. The study supports the scenario of hardening due to domain walls pinning by V_Pb‐V_O divacancies and softening upon decrease in their concentration.     

Low Temperature Ionic Conductivity of an Acceptor‐Doped Perovskite: II. Impedance of Single‐Crystal BaTiO3

Low temperature conductivity mechanisms were identified in acceptor‐doped BaTiO₃ single crystals equilibrated and quenched from high temperature under different oxygen partial pressures. A range of acceptor ionization states were quenched into samples doped with manganese or iron. Using an appropriate equivalent circuit to interpret impedance spectroscopy data, room temperature conductivity mechanisms in the single crystal samples were identified, and the permittivity/temperature dependence was also shown to be self‐consistent with the nature of a first‐order ferroelectric phase transition. The primary, low temperature, conduction mechanism in acceptor‐doped BaTiO₃ was determined to be dominated by the migration of oxygen vacancies. The activation energy for oxygen vacancy migration was experimentally determined to have a value of nearly 0.7 eV. This activation energy represents an intrinsic value for vacancy hopping and confirms our previous work that revealed minimal interaction between acceptor dopants and oxygen vacancies in BaTiO₃ in contrast to the well‐documented evidence of defect association in SrTiO₃.     

Greatly enhanced photocurrent in inorganic perovskite [KNbO3]0.9[BaNi0.5Nb0.5O3‐σ]0.1 ferroelectric thin‐film solar cell

Inorganic perovskite [KNbO₃]_0.9[BaNi_0.5Nb_0.5O_3‐σ]_0.1 (KBNNO) ferroelectric thin films with narrow band gap (1.83 eV) and high room‐temperature remnant polarization (Pr = 0.54 μC/cm²) was grown successfully on the Pt(111)/Ti/SiO₂/Si(100) substrates by pulsed laser deposition. Ferroelectric solar cells with a basic structure of ITO/KBNNO/Pt were further prepared based on these thin films, which exhibited obvious external‐poling dependent photovoltaic effects. When the devices were negatively poled, the short‐circuit current and open‐circuit voltage were both significantly higher than those of the devices poled positively. This is attributed to enhanced charge separation under the depolarization field induced by the negative poling, which is superimposed with the built‐in field induced by the Schottky barriers at the interfaces between KBNNO and the two electrodes. When a poling voltage of ‐1 V was applied, the device showed a short‐circuit current as high as 27.3 μA/cm², which was by two orders of magnitude larger than that of the KBNNO thick‐film (20 μm) devices reported previously. This work may inspire further exploration for lead‐free inorganic perovskite ferroelectric photovoltaic devices.     

Superior ferroelectric properties and enhanced depolarization temperature simultaneously achieved in BNT-based ceramics

Bi_0.5Na_0.5TiO₃-based ceramics with high remnant polarization P_r have shown outstanding potential in the application of high-power ferroelectric transducers. However, low depolarization temperature T_d is an obstacle for their application. Here, a composition design strategy was proposed to simultaneously improve the T_d and P_r in BNT-based materials. Ultrahigh P_r of 40.56 µC/cm² and relative high T_d of 184°C were synergistically achieved in (Bi_0.5Na_0.5)(Ti_0.995Mn_0.005)O₃ (BNMT) ceramics by adding 1.0 mol% BiGaO₃ (BG), which is superior to other reported lead-free systems. The excellent ferroelectric properties were attributed to strengthen ferroelectric order as evidenced by increased rhombohedral distortion. Meanwhile, the enhanced depolarization temperature, increasing from 168°C for x = 0% to 184°C for x = 1.0%, can be ascribed to the suppression of the thermal-induced ferroelectric-relaxor phase transition by adding BG. Those results enable the BNMT-BG systems ceramics to be an attractive candidate for application in high-power supplies.     

Effects of temperature and electric field on upconversion luminescence in Er3+‐Yb3+ codoped Ba0.8Sr0.2TiO3 ferroelectric ceramics

Optical and electrical properties of 1%Er³⁺ and different Yb³⁺ content (1ExY) codoped Ba_0.8Sr_0.2TiO₃ (BST) ferroelectric ceramics fabricated by the solid‐phase reaction were investigated. Under 980 nm pump condition, two green emission bands at 525 and 549 nm wavelength corresponding to, ²H_11/2→⁴I_15/2 and ²S_3/2→⁴I_15/2 transitions, and two red emission bands at 655 and 668 nm wavelength attributed to ⁴F_9/2→⁴I_15/2 transition are observed. The temperature‐sensing behaviors, calculated by the intensity ratio I₅₂₅/I₅₄₉ suggested that, the maximum sensitivity of the green emission of the 1E8Y‐BST ceramics is 1.07×10^?2 K‐1 at 293 K. Furthermore, the maximum sensitivity of 1E6Y‐BST and 1E11Y‐BST ceramics were obtained around the Curie temperature. The fluorescence lifetime of 1E8Y‐BST ceramics for ²H_11/2 level and ²S_3/2 level shortened with the increase in the temperatures. Moreover, the upconversion (UC) luminescence intensity of 1E8Y‐BST decreased with the increase in the external electric field and had a mutation at the coercive electric field (E_c) of about 1.24 kV/cm, which revealed that the electric field had influence on the UC luminescence.     

Re-entrant ferroelectric relaxor phenomena in the (1 − x)[Bi1/2(Na1/2K1/2)1/2TiO3]-xPbZrO3 system

The solid solution (1 − x)[Bi_1/2(Na_1/2K_1/2)_1/2TiO₃]-xPbZrO₃, (0.00 ≤ x ≤ 0.12) was investigated to examine the phase equilibria, dielectric and electromechanical properties. The composition corresponding to x = 0.00 exhibits tetragonal symmetry with the expected classical ferroelectric (FE) behavior. The system exhibited FE to relaxor crossover with the addition of lead zirconate at the composition x = 0.05. This is indicated by typical relaxor characteristics such as a transition to the global pseudocubic phase, a constriction in the FE hysteresis loop, and a sudden decrease in the negative strain accompanied by an increase in maximum strain. Most notably, with a further increase in x (>0.05), there is evidence for a return to a FE phase that exhibits classical FE characteristics. The combined results demonstrate that there exists a narrow FE-relaxor boundary near x = 0.05, where FE and relaxor phases coexist. At the critical composition, enhancement in the piezoelectric properties, including an increase in the effective (350 pm/V) was observed. This transition in the electromechanical properties is consistent with changes observed in the phase equilibria for this solid solution. The crystal structure transitions from tetragonal symmetry for x = 0.00, to pseudocubic symmetry for the relaxor compositions (x = 0.05), and finally to a lower symmetry perovskite phase for the re-entrant FE phase (x> 0.05). This composition-induced transition from FE to relaxor to a re-entrant FE state in the (1 − x)[Bi_1/2(Na_1/2K_1/2)_1/2TiO₃]-xPbZrO₃ system is unusual among relaxor FE systems and thus is of great scientific and technological interest.     

Enhanced electrical properties and strong red light‐emitting in Eu3+‐doped Sr1.90Ca0.15Na0.9Nb5O15 ceramics

The luminescent‐ferroelectic materials based on Sr_1.90Ca_0.15Na_0.9Nb₅O₁₅ (SCNN) matrix doping with Eu³⁺ were synthesized by the conventional solid‐state reaction method. The crystal structure, photoluminescence, thermal stability, dielectric, ferroelectric, and piezoelectric behaviors were systematically investigated. XRD results revealed that Eu³⁺ introduction could induce the tungsten bronze phase transition from orthorhombic to tetragonal structures. The dielectric spectra of all specimens showed two broad dielectric anomalies: a high‐temperature ferroelectric phase transition (T_c) and a low‐temperature ferroelastic phase transition (T_s), both of which were suppressed at higher Eu³⁺ concentrations. The enhanced electrical properties were obtained in a proper Eu³⁺ concentration range of 0.03‐0.05. For all SCNN:xEu³⁺ samples, the strong red emission peak at 617 nm originating from the electric dipole transition of ⁵D₀ →⁷F₂ was excited by different light excitations of 395 or 463 nm. Our results demonstrated that Eu³⁺‐doped SCNN materials might have promising potential in advanced multifunctional optoelectronic applications.     

Dielectric and ferroelectric properties of lanthanum‐modified lead zirconate stannate titanate (42/40/18) ceramics

The effect of lanthanum (La) content on the phase transformation of Pb_1?3x/2La_x(Zr_0.42Sn_0.40Ti_0.18)O₃ (PLZST 100x/42/40/18, 0 ≤ x ≤ 0.06) ceramics was investigated by the dielectric and ferroelectric properties. The base composition PLZST 0/42/40/18 located in the ferroelectric (FE) rhombohedral phase region. As x increased, the compositions showed successively FE and antiferroelectric (AFE) state at room temperature, and their peak temperatures (T_max) decreased gradually in line as T_max = 162.21‐1507x. Evidence was presented that there were two dielectric anomalies in PLZST 2/42/40/18, which were corresponding to the FE‐AFE and AFE‐paraelectric (PE) phase transformations, respectively. With increasing the dc bias fields, the two phases merged into one. PLZST 3/42/40/18 showed AFE characteristics with the first loop outside of the second loop and there was only one dielectric inflection. The critical lanthanum content occurred at x = 0.03 from the dielectric temperature spectra and hysteresis loops. Furthermore increase in La above 0.03, these compositions showed typical antiferroelectric behaviors with double hysteresis loops. The stored energy properties of the three compositions (PLZST 4/42/40/18, 5/42/40/18 and 6/42/40/18) displayed different temperature dependencies from room temperature to 140°C (over their respective T_max). Comparing the above results with previous investigations on PLZSTs, some questions were discussed.     

Lead-reduced Bi(Ni2/3Ta1/3)O3-PbTiO3 perovskite ceramics with high Curie temperature and performance

With increasing demand of high-temperature piezoelectric devices and growing concern over environment protection, a feasible reduction in lead from lead-based high Curie temperature piezoelectric materials are desperately needed. Herein, a new system of lead-reduced Bi(Ni_2/3Ta_1/3)O₃-PbTiO₃ (BNT-PT) ferroelectric ceramics is fabricated by a conventional solid-state sintering process. The phase transition behaviors as a function of composition and temperature, electrical properties, as well as the domain configurations from a microscopic level have been investigated in detail. The results indicate that crystal structures, phase transition behaviors, and electric properties of BNT-PT ceramics can be affected significantly by the content of BNT counterpart. Dielectric measurements show that xBNT-(1−x)PT ceramics transfer from the normal ferroelectrics to the relaxor ferroelectrics at compositions of x = 0.3-0.35. The BNT-PT ceramics exhibit high Curie temperature T_C ranging from 474 to 185°C with the variation in BNT content. The relative dielectric tunability n_r also rises from only 0.65% for 0.10BNT-0.90PT to 50.23% for 0.40BNT-0.60PT with increasing BNT content. The tetragonal-rich composition 0.30BNT-0.70PT ceramic possesses the maximum remnant polarization of P_r ~ 34.9 μC/cm². Meanwhile, a highest piezoelectric coefficient of d₃₃ ~ 271 pC/N and a high field piezoelectric strain coefficient of  ~ 560 pm/V are achieved at morphotropic phase boundary (MPB) composition of 0.38BNT-0.62PT. The maximum value of strain ~0.31% is obtained in the 0.36BNT-0.64PT ceramic. The largest electromechanical coupling coefficient k_p is 44.5% for 0.37BNT-0.63PT ceramic. These findings demonstrate that BNT-PT ceramics are a system of high-performance Pb-reduced ferro/piezoelectrics, which will be very promising materials for piezoelectric devices. This study offers an approach to developing and exploring new lead-reduced ferroelectric ceramics with high performances.     

Lead-free pyroelectric infrared detector based on (Bi1/2Na1/2)TiO3-BaTiO3 ferroelectric ceramics

In this paper, we theoretically and experimentally reported a lead-free pyroelectric infrared (PIR) detector using (Bi_1/2Na_1/2TiO₃)-BaTiO₃(BNT-BT) ferroelectric ceramics as the sensitive material. The variation of noise density, voltage response rate (R_V), and specific detection rate (D*) with the modulation frequency under the current mode amplification circuit was investigated, and it was found that the lead-free PIR detector showed high R_V in the low frequency band. The R_V and D* reached 1.51 × 10⁵ V/W and 2.02 × 10⁸ cmHz^1/2W⁻¹ at 10 Hz, respectively. The results were much superior to the PIR based on traditional commercial pyroelectric ceramics, indicating that BNT-BT lead-free ceramics have great potential in application to PIR detectors.     

Short-Range Ordering in Pb(B'1/3B2/3)O3-Type Relaxor Ferroelectrics

The formation of nonstoichiometric 1:1 ordered nanodomains, which promote B-site microcompositional fluctuation, is known to be one of the most-efficient ways of enhancing diffuse phase transition (DPT) characteristics. A new theory regarding the 1:1 short-range ordering has been developed to account for the observed inability to grow ordered domains beyond the nanometer scale. The dispersion entropy associated with the formation of negatively charged ultrafine domains and the mode of the counter-ion distribution at the domain/matrix interface both have a significant role in controlling the equilibrium ordered domain size.     

(Pb,Sm)(Zr,Sn,Ti)O3 Multifunctional Ceramics with Large Electric‐Field‐Induced Strain and High‐Energy Storage Density

Recently, the progress of integrated electronics has led to a strong demand for materials and devices with multiple functions. In this study, we achieved Pb_0.985Sm_0.01 (Zr_0.64Sn_0.28Ti_0.08)O₃ (PSZST) multifunctional ceramics which showed simultaneously large electric‐field‐induced strain (0.63%) and high recoverable energy density (1.743 J/cm³) at room temperature. Moreover, the strain and recoverable energy density exhibited a slight frequency fluctuation in the frequency range of 1–10 Hz. Their variations were less than 8% and 1.3% and the values were all higher than 0.58% and 1.722 J/cm³, respectively. The large strain, high‐energy density, and their good frequency stability in a wide range indicate that the PSZST ceramic is quite promising for application in multifunctional devices.     

Sintering-driven effects on the band gap of (Pb,La)(Ti,Ni)O3 photovoltaic ceramics

In this work, the influence of the sintering temperature on the physical properties of (Pb_0.8La_0.2)(Ti_0.9Ni_0.1)O₃ (PLT-Ni) ceramics is reported. The experimental data revealed that the energy band gap of PLT-Ni ceramics could be tailored from approximately 2.7 to 2.0 eV by changing the sintering temperature from 1100°C to 1250°C. It is demonstrated that the simple substitution of Ti⁴⁺ by Ni²⁺ cations is effective to decrease the intrinsic band gap while increasing the tetragonality factor and the spontaneous polarization. However, the additional red-shift observed in the absorption edge of the PLT-Ni with increasing the sintering temperature was associated with a continuous increase in the oxygen vacancies () amount. It is believed that the impact of the creation of these thermally induced is manifold. The presence of and Ni²⁺ ions generate the Ni²⁺- defect-pairs that promoted both a decrease in the intrinsic band gap and an additional increase of the tetragonality factor, consequently, increasing the spontaneous polarization. The creation of Ni²⁺- defects also changed the local symmetry of Ni²⁺ ions from octahedral to a square pyramid, thus lifting the degeneracy of the Ni²⁺ 3d orbitals. With the increase in the sintering temperature, lower-energy absorbing intraband states were also formed due to an excess of , being responsible for an add-on shoulder in the absorption edge, extending the light absorption curve to longer wavelengths and leading to an additional absorption in “all investigated” spectrum as well.     

ZnO‐enhanced electrical properties of Bi0.5Na0.5TiO3‐based incipient ferroelectrics

Bi_0.5Na_0.5TiO₃‐based incipient ferroelectrics with pseudocubic structure generally show weak ferro‐/piezoelectricity but giant field‐induced strains. It is difficult to artificially and smoothly improve the electrical property based on conventional chemical doping or substituting without changing the crystal structure and suppressing the strain. Here, by introducing the semiconductor ZnO into the lead‐free incipient ferroelectric ((Bi_0.5(Na_0.84K_0.16)_0.5)_0.96Sr_0.04)(Ti_0.975Nb_0.025)O₃ (BNT–2.5Nb) to form 0‐3 type composites (BNT–2.5Nb:xZnO), we experimentally illustrate that the resistance and ferro‐/piezoelectric properties can be enhanced significantly with an unchanged crystal structure and only slightly suppressed strains. For example, the remanent polarization and piezoelectric coefficient increase from 4.6 μC/cm² and 8 pC/N for x=0 to 9.0 μC/cm² and 31 pC/N for x=0.3. At the same time, the total strain only decreases from 0.140% for x=0 to 0.108% for x=0.3, whereas the negative strain increases from ?0.003% for x=0 to ?0.010% for x=0.3. And the thermal stability of d₃₃ is enhanced. The corresponding mechanism is attributed to that ZnO can form a local field, preventing the depolarization of field induced macroscopic ferroelectric domains. Our results not only provide a feasible way to tune electrical properties of BNT‐based incipient ferroelectrics, but also may stimulate further work on artificially structured high‐performance ferroelectrics.     

Strain effects on domain structures in ferroelectric thin films from phase‐field simulations

Strain and applied external electric fields are known to influence domain evolution and associated ferroelectric responses in ferroelectric thin films. Here, phase‐field simulations are used to predict equilibrium domain structures and polarization‐field (P‐E) hysteresis loops of lead zirconate titanate (PZT) thin films under a series of mismatch strains, ranging from strongly tensile to strongly compressive. In particular, the evolution of domains and the P‐E curves under different applied strains reveal the mesoscale mechanism, the appearance of in‐plane polarization during domain switching, that is responsible for a relatively small coercive field and remnant polarization. A Landau energy distribution is analyzed to better understand the domain evolution under various strain conditions. The results provide guidance for choice of mismatched strains to yield the desired P‐E hysteresis loops and the domain structures.