Hole injection polymer effect on degradation of organic light-emitting diodes

Polythienothiophene:poly(perfluoroethylene-perfluoroethersulfonic acid) (PTT:PFFSA) has been used to enhance hole injection into small molecule OLEDs. Compared to devices with polyethylene dioxythiophene polystyrene sulfonate (PEDOT:PSS) as the hole injection layer (HIL), the OLED using PTT:PFFSA as a HIL gives enhanced efficiency and a slower luminance decay as well as a slower rise in operating voltage. Further studies of capacitance–voltage characteristics reveal that positive trapped charges accumulate in the hole transporting layer during operation. These results thus highlight the significance of hole injection layer to OLED operational stability.     

Organometal halide perovskite as hole injection enhancer in organic light-emitting diode

We introduce an organometal halide perovskite (CH₃NH₃PbI₃), as a hole injection layer (HIL) to accelerate hole injection and transport in tris-(8-hydroxyquinoline) aluminum-based organic light-emitting diodes (OLEDs). The excellent charge mobility of CH₃NH₃PbI₃ along with the better interface contacts induced by the CH₃NH₃PbI₃ HIL improved the charge balance and thus enhanced device performance compared with that of OLEDs without a HIL and with a poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) HIL. Maximum luminance of 19110 cd m⁻² and power efficiency of 3.210 lm W⁻¹ were obtained. Also, besides more balanced charge recombination, the non-aqueous fabrication of the perovskite HIL and the chemical stability of indium tin oxide in contact with CH₃NH₃PbI₃ led to increased device stability and durability, giving a half-life time as long as 31.7 h.     

PEDOT:PSS:sulfonium salt composite hole injection layers for efficient organic light emitting diodes

In this work, we propose a simple and effective approach to modify the optoelectronic properties of the commonly used poly(3,4-ethylenedioxylthiophene):poly(styrene sulfonate) (PEDOT:PSS) and consequently to improve hole injection and transport in organic light emitting diodes (OLEDs) using emissive layers based on a fluorescence copolymer. In particular, two triphenylsulfonium (TPS) salts that consist of the same TPS cation and two different counter anions, in particular, hexafluoroantimonate (SbF₆) and trifluoromethane sulfonate (Triflate) were added in the PEDOT:PSS solution in various concentrations and the composite films were fully characterized for surface and optoelectronic properties and subsequently we employed as hole injection layers (HILs) in OLEDs. It is demonstrated that both, the counter anion and the concentration of TPS-salts in the PEDOT:PSS matrix play significant role in the optoelectronic properties of the composite and thus in the device performance. Although all TPS-salt modified PEDOT:PSS films exhibited higher work function (W_F) values relative to the undoped one thus resulting in more efficient hole injection than pristine PEDOT:PSS, the PEDOT:PSS:TPS-Triflate with the lower concentration (10:1 v/v) showed the highest luminous (LE) and power efficiency (PE) values of 27.04 cd A⁻¹ and 6.26 lm W⁻¹, respectively. This extraordinary performance was ascribed to a significant increase in the conductivity of the composite film combined with the formation of an interface exciplex between the TPS-Triflate (acceptor) and the emissive copolymer (donor). This interfacial electroplex strongly confines the generated excitons and prevents their diffusion towards aluminum cathode which acts as exciton quencher.     

Surface initiated oxidative crosslinking of a polymeric hole transport material for improved efficiency and lifetime in soluble organic light-emitting diodes

A surface initiated oxidative coupling method was developed as a crosslinking approach of hole transport materials for solution processed organic light-emitting diodes. The surface initiated crosslinking method was better than bulk oxidative crosslinking method in terms of quantum efficiency and lifetime of the organic light-emitting diodes by suppressing exciton quenching by the hole transport layer. Doubled efficiency and quadrupled lifetime were obtained using the new crosslinking approach without any chemical modification of the hole transport material.     

有机发光器件中空穴注入对负电容的影响

对不同结构的有机发光器件(OLED)进行了电容-电压(C-V)特性测量,研究了不同空穴注入结构对OLED负电容的影响。结果表明,负电容的产生与OLED内部电场的分布有着密切的关系,负电容开始出现的频率与电压的平方根呈指数关系。与超薄的单层空穴注入层相比,掺杂的空穴注入层不仅能降低器件的驱动电压,而且其载流子传输特性和出现负电容时的初始电压对频率有着更强的依赖性。     

Suppressing molecular aggregation in solution processed small molecule organic light emitting diodes

Solution processing of low-molecular weight organic materials for optoelectronic devices is a challenging task due to often strong molecular aggregation. We present a facile and universal route for suppressing the aggregation of molecules during wet-deposition of emission layers for organic light emitting diodes by incorporating electronically inactive polymers. Moderate polymer concentrations of about 10 wt.% lead to only minor changes of the electrical performance while at the same time improving the film formation and consequently the device luminance significantly. The device performance matches the performance of vacuum processed devices with the same device architecture.     

基于纳米压印PET基底的高效柔性有机电致发光器件

为了克服现有的以玻璃为基底、ITO为电极的有机电致发光器件（OLED）的韧性差、对裂纹缺陷敏感等固有缺点,对现有的OLED器件结构进行优化。本文提出了以PET为基底,旋涂高导PEDOT：PSS作为阳极的高效柔性OLED器件结构。并在此基础上,通过纳米压印蛾眼模板将光耦合结构引入器件,提高器件的光取出效率。此绿光FOLED器件在亮度为1 000 cd·m^-2时,功率效率为36.10 lm·W^-1。在此基础上,通过纳米压印引入光耦合结构的柔性OLED器件表现出良好的光电性质,在亮度为1 000 cd·m^-2时,功率效率可达到80.46 lm·W^-1。并且这种绿光柔性OLED器件在以器件半边长为曲率半径180°弯折200次后亮度衰减很少。此种高导PEDOT：PSS电极和柔性PET基底可以成为较好的ITO透明电极和刚性玻璃基底的替代物,为生产可穿戴式设备提供了可能。     

Lifetime extension of blue phosphorescent organic light-emitting diodes by suppressing triplet-polaron annihilation using a triplet emitter doped hole transport layer

A lifetime extending device structure by suppressing positive polaron induced triplet exciton-polaron annihilation was developed for improved lifetime in blue phosphorescent organic light-emitting diodes. A blue triplet emitter doped hole transport layer was introduced to control the triplet exciton-polaron annihilation of blue phosphorescent emitters in the emitting layer, which extended the lifetime of the blue phosphorescent devices. Current and ultraviolet light/current aging tests of hole and electron only devices proved that the lifetime extending mechanism of the blue triplet emitter doped hole transport layer is suppression of triplet exciton-positive polaron annihilation.     

A new thermally crosslinkable hole injection material for OLEDs

A new thermal cross-linkable hole injection monomer VB-DATA derived from famous m-MTDATA as core peripherally functionalized with styryl (vinylbenzene) moiety as polymerizable group has been synthesized and characterized. The propensity of VB-DATA thin films formation is sensitive to the nature of solvent, in which the dichloroethane solution gave smooth polymeric thin films with surface roughness of RMS ∼0.84 nm by spin-casting followed by thermal treatment at 190 °C. The introduction of oxygen-linked vinylbenzene group shifted HOMO energy level of VB-DATA to −5.1 eV along with good nondispersive hole transport property (μ_h ∼ 10^–6 cm² V^–1 s^–1) makes it suitable for serving as HIL on top of ITO electrode. The replacement of PEDOT:PSS by thermally cross-linked VB-DATA films showed comparable OLEDs performance, giving more flexibility on material selection for future OLEDs applications, especially solution-processed ones.     

Phosphorescent dye-doped hole transporting layer for organic light-emitting diodes

Hole transport materials are critical to the performance of organic light-emitting diodes (OLEDs). While 1,1-bis(di-4-tolylaminophenyl)cyclohexane (TAPC) with a high triplet energy is widely used for high efficiency phosphorescent OLEDs, devices using TAPC as a hole transport layer (HTL) have a short operating lifetime due to the build-up of trapped charges at the TAPC/emitting layer (EML) interface during device operation. In this work, to solve the operating stability problem, instead of using conventional HTLs, we use a(fac-tris(2-phenylpyridine)iridium (III))(Ir(ppy)₃) doped layer as an HTL to replace the conventional HTLs. Because of the hole injecting and transporting abilities of the phosphorescent dye, holes can be directly injected into the emitting layer without an injection barrier. OLEDs based on a phosphorescent dye-doped HTL show significant improvement in operational stability without loss of efficiency.     

A hole transport material with ortho- linked terphenyl core structure for high power efficiency in blue phosphorescent organic light-emitting diodes

A hole transport material for use in blue phosphorescent organic light-emitting diodes was developed using an ortho linked terphenyl core structure. The ortho linked terphenyl core was modified with ditolylamine to yield the N⁴,N⁴,N^4″,N^4″-tetra-p-tolyl-[1,1′:2′,1″-terphenyl]-4,4″-diamine (TTTDA) hole transport material. TTTDA was compared with common 1,3-bis(N-carbazolyl)benzene (mCP) and showed lower driving voltage and higher power efficiency than mCP. The driving voltage was decreased by as much as 1.5 V and the power efficiency was improved by 25%.     

High efficiency green phosphorescent organic light-emitting diodes with a low roll-off at high brightness

Highly efficient green phosphorescent organic light-emitting diodes (PHOLEDs) with low efficiency roll-off at high brightness have been demonstrated with a novel iridium complex. The host material 1,3-bis(carbazol-9-yl)benzene (mCP) with high triplet energy is also used as the hole transporting layer to avoid carrier accumulation near the exciton formation interface and reduce exciton quenching. It provides a new approach for easily fabricating PHOLED with high triplet energy emitter. Moreover, the hole blocking layer is extended into the light emitting layer to form a co-host, realizing better control of the carrier balance and broader recombination zone. As a consequence, a maximum external quantum efficiency of 20.8% and current efficiency of 72.9 cd/A have been achieved, and maintain to 17.4% and 60.7 cd/A even at 10,000 cd/m², respectively.     

Highly efficient all-solution processed blue quantum dot light-emitting diodes based on balanced charge injection achieved by double hole transport layers

Solution-processed blue quantum dot light-emitting diodes (QLEDs) suffer from low device efficiency, whereas the balance of electron and hole injection is critical for obtaining high efficiency. Herein, synergistical double hole transport layers (D-HTLs) are employed, which use poly(9-vinylcarbazole) (PVK) stacked on poly[(9,9-dioctylfluorenyl-2,7-diyl)-alt-(4,4'-(N-(4-butylphenyl) (TFB). The fabrication of D-HTLs is achieved by using dimethyl formamide (DMF) as the solvent for PVK, with which the underlying TFB layer almost remains unwashed and undamaged during the spin-coating process of PVK layer. TFB/PVK D-HTLs form the stepwise energy level for hole injection, which reduces the hole injection barrier and favors the carrier balance in the emission layer (EML). The optimized blue QLED with TFB/PVK D-HTLs shows a maximum external quantum efficiency (EQE) of 13.7%, which is 3-fold enhancement compared to that of the control device with single TFB HTL. The enhancement of the QLED performance can be attributed to the improvement of surface morphology and charge injection balance for the stepwise D-HTLs based QLEDs. This work manifests the positive effect on performance boost by selecting appropriate solvents towards stepwise D-HTLs formation and paves the way to fabricate highly efficient all-solution processed light emitting diodes.     

Modification effect of hole injection layer on efficiency performance of wet-processed blue organic light emitting diodes

We examined the performance of solution-processed organic light emitting diodes (OLEDs) by modifying the hole injection layer (HIL), poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT: PSS). Atomic force microscopy (AFM) showed morphological changes with surface roughness (R_RMS) of 1.47, 1.73, and 1.37 nm for pristine PEDOT: PSS, PEDOT: PSS modified with a 40 v% deionized water and with a 30 v% acetone, respectively. The surface hydrophobicity of the acetone modified PEDOT:PSS HIL layer was decreased by 34% as comparing with the water modified counterpart. Electrical conductivity was increased to two orders of magnitude for the water and acetone modified PEDOT:PSS as compared to pristine. We observed a low refractive index and high transmittance for the modified HILs. We fabricated and explored electroluminescent properties of bis[2-(4,6-difluorophenyl)pyridinato-C2,N](picolinato)iridium(III) (FIrpic) based sky blue device by utilizing HIL with and without modification. The changes in electrical conductivity, surface roughness, refractive index, and transmittance of the modified HILs strongly influenced the performance of devices. By utilizing a 30% acetone modified HIL, the power efficiency was increased from 14.2 to 24.2 lm/W, an increment of 70% and the EQE from 8.5 to 13.1% at 100 cd/m², an increment of 54%. The maximum luminance also increased from 11,780 to 18,190 cd/m². The findings revealed herein would be helpful in designing and fabricating high efficiency solution processed OLEDs.     

Solution-processed quantum dot light-emitting diodes based on NiO nanocrystals hole injection layer

Nickel oxide (NiO), as a kind of p-type transition metal oxide (TMO) has shown promising applications in photoelectric devices. In our work, the NiO nanocrystals (NCs) are fabricated by a simple solvothermal method using tert-butyl alcohol and nickel acetylacetonate as precursors at 200 °C for different reaction times. The diameters and valence band edge of the prepared NiO NCs are increased with the increase reaction time from 12 h, 24 h–36 h. The band gaps of the NiO NCs were decreased with the increase time. Selected area electron diffraction (SAED) shows that the NiO NCs is polycrystalline structure. X-ray diffraction (XRD) indicates that the NiO NCs is cubic crystal form. X-ray photoelectron spectroscopy (XPS) shows that the as-prepared NiO NCs have a core of NiO and some form of Ni₂O₃ and NiOOH states on its surface. Further, the obtained NiO NCs is applied on quantum dot light-emitting diode (QLED) as hole injection layer (HILs), showing excellent hole injection properties. Particularly, the NiO NCs for 24 h obtains the best results due to its high band gap and pure cubic crystal phase. Highly bright orange-red QLED with peak luminance up to ∼25580 cd m⁻², and current efficiency (CE) of 5.38 cd A⁻¹ are achieved successfully based on the high performance NiO HIL, further, the device obtained relative long operational lifetime of 11491 h, which has been improved by more than 6- fold as compared to 1839 h for the device based on PEDOT.     

Carrier radiation distribution in organic light-emitting diodes

This paper is based on the analysis of white organic electroluminescent device electroluminescent spectrum to explain the regular pattern of carrier radiation distribution.It has proved electron that is injected from cathode is satisfied with the regularity of radiation distribution on the organic emitting layer.This radiation distribution is related to several factors,such as electron injection capabilities,applied electrical field intensity,carrier mobility,etc.The older instruction design is ITO/2-TNATA/NPB/ADN:DCJTB:TBPe/Alq3/cathode.Get to change electron injector capabilities through using different cathode and also find electroluminescent spectrum to produce significant changes.Simultaneously,electron radiation quantity has some limitation,and electroluminescent spectrum reflects that spectral intensity does not change anymore when the ratio of cathode dopant to a saturated state on the organic emitting layer.It also shows the same spectrum variational phenomenon while changing the applied electrical field intensity.To put forward of the carrier radiation distribution is good for organic light emitting diode (OLED) luminescence properties analysis and research.     

Molecular design of large-bandgap host materials and their application to blue phosphorescent organic light-emitting diodes

New large-bandgap host materials with carbazole and carboline moieties were designed and synthesized for high-performance blue phosphorescent organic light-emitting diodes (PhOLEDs). The two kinds of host materials, 9-(4-(9H-carbazol-9-yl)phenyl)-6-(9H-carbazol-9-yl)-9H-pyrido[2,3-b]indole (pP2CZCB) and 9-(3-(9H-carbazol-9-yl)phenyl)-6-(9H-carbazol-9-yl)-9H-pyrido[2,3-b]indole (mP2CZCB), displayed promisingly high triplet energies of ∼2.92–2.93 eV for enhancing the exothermic energy transfer to bis[2-(4,6-difluorophenyl)pyridinato-C²,N](picolinato)iridium(III) (FIrpic) in PhOLED devices. It was found that the blue PhOLEDs bearing the new host materials and the FIrpic dopant exhibited markedly higher external quantum efficiencies (EQEs) than a device made with 1,3-bis(N-carbazolyl)benzene (mCP) as the host. In particular, the PhOLED device made with 3 wt% FIrpic as the dopant and mP2CZCB as the host material displayed a low driving voltage of 4.13 V and the high EQE of 25.3% at 1000 cd m⁻².     

Phosphorescent organic light emitting diodes with a cross-linkable hole transporting material

A cross-linkable hole transporting material PLEXCORE® HTL was incorporated in phosphorescent organic light emitting diodes. This hole transporting material is based on an arylamine derivate. The device performance in terms of efficiency and lifetime was compared to the same devices with a thermally evaporated 4,4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (NPB)-based hole transporting layer. The resulting devices with the cross-linkable HTL gave higher efficiency, smaller roll-off and longer lifetime compared with devices with the NPB-based devices. This new hole transporting material paves the road toward solution processed multilayer light emitting devices.     

Aqueous solution-processed InCl3 as an effective buffer layer to improve hole injection in simplified phosphorescent organic light emitting diodes

An effective anode buffer layer is demonstrated by aqueous solution-processed indium trichloride (sInCl₃) in simplified phosphorescent organic light emitting diodes (PhOLEDs). The hole injection is improved in sInCl₃ based PhOLEDs exhibiting better performance with decreased driving voltage, increased power efficiency compared to the traditional ultraviolet-ozone (UV-Ozone) treated ones. Then, the mechanism for the enhanced hole injection is investigated. Better electrode contact is found in sInCl₃ based hole dominated devices. Higher work function (∼0.60 eV) is detected on the sInCl₃-ITO anode and stable InCl bonds are formed on its surface compared to the UV-Ozone treated one according to the photoelectron spectroscopy.