基于微通道热沉的片状激光放大器散热模拟及优化

为实现片状结构高重复频率大能量激光放大器的高效热管理，采用有限元分析(FEA)方法，充分考虑增益介质内部非均匀热分布、微通道热沉中的流速、对流扩散等影响因素，引入流-热-固多物理场耦合数值分析模型，对激光放大器热沉进行分析优化，并基于优化结果探讨了不同流速下微通道热沉的散热冷却能力。模拟结果表明：当基底厚度H_b=2 mm、单个微通道高度H_c=4 mm和宽度W_c=0.4 mm、两微通道的间距W_w=0.3 mm时，微通道热沉冷却能力最强，热阻最小；微通道内冷却液流速过大会导致较大的流动压力损失；微通道热沉的平均等效换热系数可达50000 W/(m²·K)。     

单层与双层高效微小通道换热器的数值研究及优化

单层微通道热沉解决了高热流密度器件冷却问题,但被冷却器件表面存在温差大的缺点,双层微通道热沉由于其独特的结构设计,提高了被冷却表面的温度均匀性。建立了双层热沉的三维流固耦合模型,以恒定泵功为约束条件,热阻为热沉性能评价指标,比较了单层、双层逆向与双层同向热沉性能,结果表明,在泵功0.05 W和热流密度100 W/cm~2时,三种不同形式热沉热阻分别为0.1677k/W、0.1535k/W、0.1895k/W,热沉被冷却表面的最大温差分别为9.76 K、6.06 K、12.34 K,通过比较双层逆向热沉显著改善被冷器件温度均匀性,降低热阻。双层热沉上下通道泵功分配对热沉性能有较大影响,通过优化,分别使双层同向热沉、逆向热沉热阻减小15.83%、9.84%。     

微通道散热大功率半导体激光器研究

基于GaInAs/AlGaAs应变量子阱大光腔结构激光器芯片和无氧铜微通道热沉,采用In焊料烧结工艺,制作了976nm大功率连续激光器单条。在20℃热沉冷却条件下,输入电流110A时,输出功率104.9W,电光转换效率达到最大值64%。输入电流300A时,输出功率276.6W,电光转换效率达到54.2%。对激光器单条的热阻以及特征温度进行了测试分析,根据分析结果模拟了激光器单条在大电流下的输出特性,模拟结果显示热饱和是限制激光器最大输出功率的原因。因此,为了提高大功率激光器的输出功率,需要进一步提高激光器的特征温度,并降低热阻以改善散热情况。     

复合型微通道热沉设计与制作技术研究

从大功率半导体激光器可靠性封装和应用考虑,利用商用有限元软件Abaqus与CFdesign对微通道热沉材料、结构进行优化设计,结合相应的制造工艺流程制备实用化复合型微通道热沉。微通道热沉尺寸为27 mm×10.8 mm×1.5 mm,并利用大功率半导体激光阵列器件对所制备热沉进行散热能力、封装产生的"微笑效应"进行了测试,复合微通道热沉热阻约0.3 K/W,"微笑"值远小于无氧铜微通道封装线阵列,可以控制在1μm以下。复合型微通道热沉能满足半导体激光阵列器件高功率集成输出的散热需求与硬焊料封装的可靠性要求。     

基于微通道散热的大功率LED阵列的热阻研究

采用微通道致冷技术,设计了大功率LED阵列的外部热沉.针对直鳍片微通道结构的散热器,理论分析了影响其热阻的因素,推导了热阻表达式,并对微通道散热器的结构参数进行了优化,指出当通道宽度取某一数值时,散热器的热阻可达到最小.利用MATLAB软件,对LED的热阻与微通道散热器的结构参数和冷却液的压力关系进行了仿真,给出了直观的关系曲线.     

应用于大功率激光二极管列阵的单片集成微通道制冷热沉

介绍了一种应用于大功率激光二极管列阵的新型单片集成微通道制冷热沉.这种热沉已制造并经过测试.10叠层的激光二极管列阵的热阻为0.121℃/W.相邻两个激光条的间距是1.17mm.在20%高占空比条件下,波长为808nm左右,峰值功率可以达到611W.     

AIN Monolithic Microchannel Cooled Heatsink for High Power Laser Diode Array

介绍了一种应用于大功率激光二极管列阵的新型单片集成微通道制冷热沉．这种热沉已制造并经过测试．10叠层的激光二极管列阵的热阻为0.121℃/W．相邻两个激光条的间距是1.17mm．在20%高占空比条件下，波长为808nm左右，峰值功率可以达到611W．     

高光束质量大功率半导体激光阵列的微通道热沉

针对现有高光束质量大功率半导体激光阵列内部发光单元条宽、填充因子不断减小,腔长不断增加的发展趋势所带来的热源分布及长度变化影响器件热阻的问题,利用分离热源边界条件结合商用计算流体力学(CFD)软件FLUENT进行数值计算,获得微通道热沉热阻随阵列器件发光单元条宽、空间位置变化关系以及不同阵列腔长对应的微通道优化长度.根据优化参数制备获得尢氧铜微通道热沉,并对宽1 cm,腔长1 mm,条宽100μm,填充因子为25%的半导体激光阵列进行散热能力测试,冷却器外形尺寸27 mm×11 mm×1.5 mm.微通道热沉热阻0.34 K/W,能够满足半导体激光阵列器件高功率集成输出的散热需求.     

高功率半导体激光器微通道热沉的模拟优化

针对原curamik微通道热沉因进水通道流量不均而导致散热不均匀的现象,基于FLUENT软件对其进行数值模拟。从内部结构及热沉材料方面提出优化方案,并进一步获得在热沉高度和进出口宽度为固定值的条件下,微通道宽度、间距及通道脊长度3个因素分别对芯片表面温升和压降的影响规律。根据优化的参数,通过选区激光熔化技术制备获得纯镍微通道热沉并进行芯片封装测试。结果显示,微通道热沉散热均匀,热阻为0.39K/W,压降为140kPa,能够满足输出功率为80 W的半导体激光器单巴条芯片的散热要求。     

固体激光器新型冷却热沉的设计和CFD数值研究

为固体激光器设计了一种新型内部结构扰流柱结构的冷却热沉,采用计算流体力学（CFD）方法对此水冷热沉的三种典型设计方案以及传统的空腔结构和等截面小通道结构热沉分别进行了数值模拟,据此研究了冷却水流量对各种方案的增益介质最高温度、冷却面温度分布以及热沉的压力损失等特性的影响。在相同传热量和相同冷却水流量前提下,等截面小通道热沉和扰流柱热沉的传热特性都明显优于空腔结构热沉。与等截面小通道水冷热沉相比较,扰流柱热沉传热热阻更小,而流动压力损失较大。数值模拟结果表明扰流柱热沉传热性能优于传统的两种热沉（空腔结构和等截面小通道结构）设计方案,具有更好的冷却效果。在较高流量下工作时,扰流柱热沉传热性能略优于等截面小通道热沉,在较低流量下工作时则显著优于等截面小通道热沉。     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks     

Call for Papers—Feature Topic,Vol.12,No.7,2015

正Information Centric Networking Information-Centric Networking(ICN) is an emerging direction in Future Internet architecture research,gaining significant tractions among academia and industry.Aiming to replace the conventional host-to-host communication model by a data-centric model,ICN treats data content as the first     

JOURNAL OF ELECTRONICS(CHINA)

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NEXT GENERATION WIRELESS NETWORKS–ESPECIALLY THE USE OF MILLI-MICROWAVE BANDS

The global bandwidth shortage of wireless communications has motivated the exploration of the naillimeter wave （ram-wave） frequency spectrum for the next generation wireless communications. Recent advances in RF CMOS technology and high speed baseband signal processing technologies have enabled tile extensive research and development of turn-wave wireless communications. The multi gigabit per second data rate of ram-wave system will lead to applications in many important scenarios, such as WPAN, WLAN,back-haul for cellular system. And the frequency bands include 28 GHz, 38 GHz, 45GHz, 60GHz, E-BAND and even beyond 100 GHz. The propagation and the imitation of the RF circuits design in these frequency bands make the directional antennas be inevitable for mm-wave communications.