小面积低功耗RFID射频前端电路设计

提出了一个适用于EPC Gen2协议的小面积低功耗RFID射频前端电路的设计方案.射频前端电路包括整流器、ASK解调器、ASK和BPSK调制器和传感器模块,射频的工作频率为860～960 MHz.基于具有不挥发存储器和肖特基二极管选项的0.35μm CMOS工艺,设计了RFID射频前端电路.采用开关电容电路技术实现了小面积低功耗RFID射频前端电路.     

小面积低功耗RFID射频前端电路设计

提出了一个适用于EPC Gen2协议的小面积低功耗RFID射频前端电路的设计方案.射频前端电路包括整流器、ASK解调器、ASK和BPSK调制器和传感器模块,射频的工作频率为860～960 MHz.基于具有不挥发存储器和肖特基二极管选项的0.35μm CMOS工艺,设计了RFID射频前端电路.采用开关电容电路技术实现了小面积低功耗RFID射频前端电路.     

低压低功耗无源UHF RFID标签芯片模拟前端电路的设计

本文从设计符合EPCTM C1G2协议的超高频无源射频识别标签芯片的角度出发,对RFID标签芯片模拟前端电路进行设计.通过对各个关键电路的功耗与电源进行优化,实现了一个符合协议要求的低电压、低功耗的超高频无源RFID标签芯片的模拟前端.该UHF RFID标签模拟前端设计采用SMIC 0.18 μm EEPROM CMOS工艺库.仿真结果表明,标签芯片模拟前端的整体功耗控制在2.5 μW以下,工作电源可低至1 V,更好地满足了超高频无源射频识别标签芯片应用需求.     

一种新的RFID射频前端振荡器的设计方法

为解决RFID低功耗、小体积的问题,提出了一种新的RFID射频前端振荡器的设计方法.分析了晶体管稳定性的变化规律,提出了采用晶体管和无源网络产生振荡的方法,在增加正反馈使反射系数最佳的情况下给出了振荡器的电路结构.对射频振荡器进行仿真,结果表明,调谐网络和终端网络对振荡器的性能有影响,反射系数增大可缩短起振时间,调谐网络电阻增大将加大噪声,可以综合利用史密斯圆图和复平面上的稳定性边界有效分配性能指标.研究结果为RFID在低复杂度下改善振荡器的性能提出了一种新的途径.     

低功耗有源UHF-RFID标签芯片

采用SMIC 0.18 μm CMOS工艺,设计了一种低功耗的超高频有源RFID标签芯片射频接收前端电路.其中,低噪声放大器(LNA)采用共源共栅源极电感负反馈差分结构,下变频混频器(Mixer)采用吉尔伯特(Gilbert)有源双平衡结构.通过整体及模块电路优化,该电路在较低功耗下仍然具有较好性能.仿真结果表明,整个接收端功耗仅为14 mW,与传统射频前端芯片相比,功耗降低53%;整体增益为21.6 dB,噪声系数7.1 dB,三阶输入截止点-18.9 dBm,满足有源UHF-RFID标签芯片低功耗高性能的应用需求.     

低频低功耗无源RFID模拟前端设计与分析

介绍了一款低频低功耗无源射频识别(RFID)技术芯片模拟前端的设计.详细介绍了低频RFID模拟前端的整体结构和主要模块.通过对低功耗带隙基准的设计,产生合适的偏置电压,为其他模块提供偏置,以此来限制其他模块的功耗,达到降低整个模拟前端功耗的目的.通过对高性能解调电路的设计,提高解调精度,保证通信过程准确.芯片采用0.35 μm标准CMOS工艺设计和制作,实际测试结果显示,在要求的最远通信距离时,芯片依然可以正常工作,表明该设计满足实际要求.     

2.45GHz电子射频标签模拟前端芯片的研制

分析了RFID系统的组成和基本原理,针对超高频EPC C1G2协议,提出半无源及有源电子标签前端结构及参考电路,包括整流器、偏置单元、上电复位、解调、反向散射调制、振荡器等部分.采用多种方法,极大程度上实现了电路整体的低功耗,并且采取了限幅、ESD电路,保障了电路的稳定性.采用标准CMOS工艺,设计出了低功耗、低电压工作的2.45 GHz射频模拟前端芯片电路,芯片在0.8～1.8 V电压内均可正常工作.芯片的静态工作电流为2μA,芯片工作时,平均工作电流约为65μA.     

低功耗RFID射频接口电路的设计

介绍了RFID Tag结构,阐述了基于ISO/IEC 15693协议RFID无源芯片射频接口设计的关键技术,提出了电源产生电路、调制解调电路和时钟产生电路设计的优化方法.仿真验证结果表明设计的射频接口电路具有低功耗、高性能、高可靠性等特点,满足设计要求.     

疏耦合电子标签研究与实现

近年来,RFID电子标签技术成为热门新科技,由于功耗和成本的原因阻碍了其广泛应用.介绍RFID系统的组成和实现原理,给出低成本、低功耗无源电子标签芯片体系结构,提出低功耗射频接口电路、数字控制电路、存储电路设计关键技术和优化设计,并成功应用到基于IS0/IEC 15693协议无源电子标签芯片设计中,在SMIC 0.35μm E2PROM工艺条件下流片成功,芯片面积为1.86 mm2,设计指标满足标签芯片的性能要求.     

UHF RFID读写器射频前端电路设计

RFID近年来发展迅速,广泛应用在物流、交通、军事等领域.在研究RFID读写器设计的基础上,提出了符合EPC Class-1,Generation-2标准的UHF RFID读写器射频前端的电路设计方案,着重设计了射频前端中频滤波模块和低噪声放大模块的电路.电路设计基于0.18 μmCMOS工艺标准的单元库,采用EDA工具对电路进行了性能分析.仿真结果表明中频滤波模块和低噪声放大模块性能良好,符合EPC Class-1,Generation-2标准.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.