Implantation effect of diamond-like carbon films by 110 keV nitrogen ions

Diamond-like carbon films, grown on microscope slides by a dual-ion beam sputtering system, were implanted by 110 keV N⁺ under the doses of 1 × 10¹⁵, 1 × 10¹⁶ and 1 × 10¹⁷ions cm⁻² respectively. The implantation induced changes in electrical resistivity of the films and in infrared (IR) transmittance of the specimens were investigated as a function of implantation dose. The structural changes of the films were also studied using IR spectroscopy and Raman spectroscopy. It was observed that, with the increase of implantation dose, the diamond-like carbon films display two different stages in electrical and optical behaviours. The first is the increase of both the film resistivity and the IR transmittance of specimen at the dose of 1 × 10¹⁵ ions cm⁻² which, we consider, is attributed to the implantation-induced increase sp³ C---H bonds. However, when the doses are higher than 1 × 10¹⁵ ions cm⁻², the film resistivity and the IR transmittance of specimen decrea significantly and the decrease rates at dose range of 1×10¹⁶ to 1×10¹⁷ ions cm⁻² are smaller than those between 1×10¹⁵ and 1 × 10¹⁶ ions cm⁻². We conclude that the significant reductions of the two parameters at high doses are caused by the decreases of bond-angle disorder and of sp³ C---H bonds, the increases of sp² C---C bonds dominated the crystallite size and/or number and also the sp² C---H bonds. The smaller decrease rates at a dose range of 1 × 10¹⁶ to 1 × 10¹⁷ ions cm⁻² may be caused by further recombination of some retained hydrogen atoms to carbon atoms.     

Quantitative analysis of tungsten, oxygen and carbon concentrations in the microcrystalline silicon films deposited by hot-wire CVD

In order for hot-wire chemical vapor deposition to compete with the conventional plasma-enhanced chemical vapor deposition technique for the deposition of microcrystalline silicon, a number of key scientific problems should be cleared up. Among these points, the concentration of tungsten (nature of the filament), as well as the concentration of oxygen and carbon (elements issued when vacuum is broken between two runs), should not exceed threshold values, beyond which electronic properties of the films could be degraded, as in the case of monocrystalline silicon. Quantitative chemical analysis of these elements has been carried out using the secondary ion mass spectrometry technique through depth profiles. It has been shown that for a high effective filament surface area (S_f=27 cm²), the W content increases steadily from 5×10¹⁴ to 2×10¹⁸ atoms cm⁻³ when the filament temperature T_f increases from 1500 to 1800 °C. For a fixed T_f, the W content increases with the effective surface area S_f. Thus, considering our reactor geometry, the W content does not exceed the detection limit (5×10¹⁴ atoms cm⁻³) when T_f and S_f are limited to 1600 °C and 4 cm², respectively. For O and C elements, under deposition conditions of high dilution of silane in hydrogen (96%), O and C concentrations approaching 10²⁰ atoms cm⁻³ have been obtained. The introduction of an inner vessel inside the reactor, the addition of a load-lock chamber and a decrease in substrate temperature to 300 °C have led to a drastic decrease in these contents down to 3×10¹⁸ atoms cm⁻³, compatible with the realization of 6% efficiency HWCVD μc-Si:H solar cells.     

Dielectric properties of AlN films prepared by laser-induced chemical vapour deposition

The dielectric properties and electrical conductivity of AlN films deposited by laser-induced chemical vapour deposition (LCVD) are studied for a range of growth conditions. The static dielectric constant is 8.0 ± 0.2 over the frequency range 10²−10⁷ Hz and breakdown electric fields better than 10⁶ V cm⁻¹ are found for all films grown at temperatures above 130°C. The resistivity of the films grown under optimum conditions (substrate temperature above 170°C, NH₃/TMA flow rate ratio greater than 300 and a deposition pressure of 1–2 Torr) is about 10¹⁴ Ω cm and two conduction mechanisms can be identified. At low fields, F < 5 × 10⁵ V cm⁻¹ and conductivity is ohmic with a temperature dependence showing a thermal activation energy of 50–100 meV, compatible with the presumed shallow donor-like states. At high fields, F > 1 × 10⁶ V cm⁻¹, a Poole-Frenkel (field-induced emission) process dominates, with electrons activated from traps at about 0.7–1.2 eV below the conduction band edge. A trap in this depth region is well-known in AlN. At fields between 4 and 7 × 10⁵ V cm⁻¹ both conduction paths contribute significantly. The degradation of properties under non-ideal growth conditions of low temperature or low precursor V/III ratio is described.     

Solid deuterium and UCN factory: application to the neutron electric dipole moment measurement

Present experiments which search for an electric dipole moment (EDM) of the neutron use ultra-cold neutrons (UCN) and are limited by counting statistics. One way to solve this problem is to improve the source of UCN. The present article briefly reviews two possibilities which employ solid deuterium at the temperature of liquid helium. The possibility of installing a solid deuterium UCN source at the FRM-II reactor and at spallation neutron sources at PSI, LANL and KEK is discussed. An increase of the UCN density up to the level of 10³–10⁴ cm⁻³ is expected. Compared to existing sources, this corresponds to an improvement by two to three orders of magnitude. Such experimental facilities will make it possible to improve measurements of the EDM of the neutron down to the level of 10⁻²⁷ e cm.     

Optically active Er–Yb codoped Y2O3 films produced by pulsed laser deposition

Optically active Er³⁺:Yb³⁺ codoped Y₂O₃ films have been produced on c-cut sapphire substrates by pulsed laser deposition from ceramic Er:Yb:Y₂O₃ targets having different rare-earth concentrations. Stoichiometic films with very high rare-earth concentrations (up to 5.5 × 10²¹ at cm^− 3) have been achieved by using a low oxygen pressure (1 Pa) during deposition whereas higher pressures lead to films having excess of oxygen. The crystalline structure of such stoichiometric films was found to worsen the thicker the films are. Their luminescence at 1.53 μm and up-conversion effects have been studied by pumping the Yb³⁺ at 0.974 μm. The highest lifetime value (up to 4.6 ms) is achieved in films having Er concentrations of ≈ 3.5 × 10²⁰ at cm^− 3 and total rare-earth concentration ≈ 1.8 × 10²¹ at cm^− 3. All the stoichiometric films irrespective of their rare-earth concentration or crystalline quality have shown no significant up-conversion.     

Surface physical and chemical changes of pure iron after molybdenum ion implantation and their effects on the tribological behaviour I: Physical and chemical analysis

Molybdenum ions generated by a metal vapour vacuum arc (MEVVA) ion source were implanted into pure iron at doses of 1 × 10¹⁷ and 3 × 10¹⁷ ions cm⁻² with an extraction voltage of 45 kV. Auger electron spectroscopy (AES) sputtering depth profiles, X-ray photoelectron spectroscopy (XPS) analysis, X-ray diffraction (XRD) analysis, microhardness and the residual stress of the implanted specimen were studied. The results show that molybdenum atoms exist in the implanted layer at a maximum concentration 20 at.%. A new phase (Fe₃C) is formed in the specimens implanted higher doses due to carbon incorporation during sputtering of the natural oxide film from the implanted surface. The Fe₂Mo phase is formed in both dose regimes. Residual compressive stresses of 310 and 560 MPa were measured on the surfaces of the specimens after molybdenum ion implantation at 1 × 10¹⁷ and 3 × 10¹⁷ ions/cm² respectively due to a local expansion of the lattice in the near-surface region. Due to the existence of residual compressive stress and the formation of the new phases, the microhardness of pure iron specimens was increased from 264 to 325 and 333 kgf mm⁻² by molybdenum ion implantation at 1 × 10¹⁷ and 3 × 10¹⁷ ions cm⁻² respectively.     

Al2O3 formation on Si by catalytic chemical vapor deposition

Catalytic chemical vapor deposition (Cat-CVD) has been developed to deposit alumina (Al₂O₃) thin films on silicon (Si) crystals using N₂ bubbled tri-methyl aluminum [Al(CH₃)₃, TMA] and molecular oxygen (O₂) as source species and tungsten wires as a catalyzer. The catalyzer dissociated TMA at approximately 600 °C. The maximum deposition rate was 18 nm min⁻¹ at a catalyzer temperature of 1000 °C and substrate temperature of 800 °C. Metal oxide semiconductor (MOS) diodes were fabricated using gates composed of 32.5-nm-thick alumina film deposited at a substrate temperature of 400 °C. The capacitance measurements resulted in a relative dielectric constant of 7.4, fixed charge density of 1.74×10¹² cm⁻², small hysteresis voltage of 0.12 V, and very few interface trapping charges. The leakage current was 5.01×10⁻⁷ A cm⁻² at a gate bias of 1 V.     

Dependence of the a-Si:H defect density of states on the magnetic field profile of an electron cyclotron resonance microwave plasma

The magnetic field profile of an electron cyclotron resonance microwave plasma was systematically altered to determine subsequent effects on a-Si:H film quality. The mobility gap deep density N_D deposition rate and light-to-dark conductivity were determined for the a-Si:H films. By variation of the magnetic field profile N_D could be altered by more than an order of magnitude, from 1 × 10¹⁶ to 1 × 10¹⁷ cm⁻³ at 0.7 mTorr and 1 × 10¹⁶ to 5 × 10¹⁷ cm⁻³ at 5 mTorr as determined by junction capacitance techniques. Two deposition regimes were found to occur for the conditions of this study. Highly divergent magnetic fields resulted in poor quality a-Si:H, while for magnetic field profiles defining a more highly confined plasma, the a-Si:H was of device quality and relatively independent of the magnetic field configuration. The data is interpreted as a consequence of silane depletion for highly divergent magnetic field profiles.     

Deep levels in GaInAs grown by molecular beam epitaxy and their concentration reduction with annealing treatment

X-ray diffraction (XRD), current–voltage (IV), capacitance–voltage (CV), deep-level transient Fourier spectroscopy (DLTFS) and isothermal transient spectroscopy (ITS) techniques are used to investigate the thermal annealing behaviour of three deep levels in Ga_0.986In_0.014As heavily doped with Si (6.8 × 10¹⁷ cm⁻³) grown by molecular beam epitaxy (MBE). The thermal annealing was performed at 625 °C, 650 °C, 675 °C, 700 °C and 750 °C for 5 min. XRD study shows good structural quality of the samples and yields an In composition of 1.4%. Two main electron traps are detected by DLTFS and ITS around 280 K, with activation energies of 0.58 eV and 0.57 eV, capture cross sections of 9 × 10⁻¹⁵ cm² and 8.6 × 10⁻¹⁴ cm² and densities of 2.8 × 10¹⁶ cm⁻³ and 9.6 × 10¹⁵ cm⁻³, respectively. They appear overlapped and as a single peak, which divides into two smaller peaks after annealing at 625 °C for 5 min.

Annealing at higher temperatures further reduces the trap concentrations. A secondary electron trap is found at 150 K with an activation energy of 0.274 eV, a capture cross section of 8.64 × 10⁻¹⁵ cm² and a density of 1.38 × 10¹⁵ cm⁻³. The concentration of this trap level is also decreased by thermal annealing.     

Phase formation at rapid thermal annealing of Al/Ti/Ni ohmic contacts on 4H-SiC

Ohmic contacts to the top p-type layers of 4H-SiC p⁺–n–n⁺ epitaxial structures having an acceptor concentration lower than 1×10¹⁹ cm⁻³ were fabricated by the rapid thermal anneal of multilayer Al/Ti/Pt/Ni metal composition. The rapid thermal anneal of multilayer A1/Ti/Pt/Ni metal composition led to the formation of duplex cermet composition containing Ni₂Si and TiC phases. The decomposition of the SiC under the contact was found to be down to a depth of about 100 nm. The contacts exhibited a contact resistivity R_c of 9×10⁻⁵ Ω cm⁻² at 21°C, decreasing to 3.1×10⁻⁵ Ω cm⁻² at 186°C. It was found that thermionic emission through the barrier having a height of 0.097 eV is the predominant current transport mechanism in the fabricated contacts.     

Control of Al-implantation doping in 4H–SiC

We report results of high-dose Al-ion implantation in 4H–SiC. Using multiple energy implantation techniques, box profiles were realized with targeted concentrations: 3.33×10¹⁸ to 10²¹ cm⁻³. The depths were 190 and 420 nm. The implantation energies ranged from 30 to 200 keV. The implantation and annealing temperatures were 650 and 1670°C, respectively. First, infrared investigations were done to assess the surface quality of the samples before and after annealing. Next, the conduction mechanism was investigated. Performing Hall measurements, we found that the room temperature free hole concentration varies like p_H=C_t/105 (cm⁻³), where C_t is the targeted Al-concentration, with a high level of electronic mobility. For the targeted concentration 10²¹ cm⁻³, this resulted in an active layer with 95 mΩ cm resistivity and, at room temperature, a free hole concentration of 10¹⁹ cm⁻³.     

MOS structures with “chlorine” grown oxide and tungsten-gold metallization

Oxide layers produced by the thermal oxidation of silicon in an oxidising atmosphere containing trichloroethylene show better properties when used in MOS transistors. The dielectric strength is improved, and the surface state density is reduced from about 2.8 × 10¹¹ cm⁻² to 1.0 × 10¹¹ cm⁻² compared with normally oxidised silicon.     

Influence of Si doping level on the Raman and IR reflectivity spectra and optical absorption spectrum of GaN

The optical absorption (hν) and Raman and Infra Red (IR) spectra of Si doped GaN layers deposited on sapphire through buffer layers have been recorded for electron concentrations from 5×10¹⁷ to 5×10¹⁹ cm⁻³. The (hν) values deduced from photothermal deflection spectroscopy (0.5–3.5 eV) and IR absorption (0.15–0.5 eV) vary between 50 and 10⁴ cm⁻¹ showing doping dependant free electron absorption at low energy, doping independant band gap at high energy, and slowly doping dependant defect absorption in the medium energy range. In our micro Raman geometry, maxima appear or can be deduced near the frequency expected for either the A₁(LO⁻) or the A₁(LO⁺) modes split from the A₁(LO) mode by plasmon phonon interaction. There is a large systematic evolution in the expected way for the IR reflectivity.     

Temperature dependencies of excited states lifetimes and relaxation rates of 3–5 phonon (4–6 μm) transitions in the YAG, LuAG and YLF crystals doped with trivalent holmium, thulium, and erbium

The temperature dependencies of the nanosecond multiphonon relaxation (MR) rates of the ³F₃ state of Tm³⁺ in the YLF crystal and of the ⁵F₅ state of Ho³⁺ ion in the YAG and LuAG crystals and of the microsecond MR rates of the ⁴F_9/2 (²H_9/2) state of Er³⁺ ions in YLF were measured in the wide temperature range using direct laser excitation and selective fluorescence kinetics decay registration. For YLF the observed relations are explained by 4-phonon process in the frame of a single-frequency model with hω_eff=450±30 cm⁻¹ for the ³F₃ state of Tm³⁺ and by 5-phonon process with hω_eff=445 cm⁻¹ for the ⁴F_9/2 (²H_9/2) state of Er³⁺. For YAG and LuAG crystals these dependencies are explained by the 3-phonon process with hω_eff=630 cm⁻¹. The decrease of the relaxation rate with the temperature in the range from 13 to 80 K was observed for the ⁴F_9/2 (²H_9/2) state of Er³⁺ in the YLF crystal. It is explained by the redistribution of excited electronic states population of erbium ions over the higher lying Stark levels with different MR probabilities. A good fit of experimental temperature dependence (including the dropping part of the experimental curve) was obtained for single-frequency model (hω_eff=450 cm⁻¹) with W₀₁=8.0×10⁴ s⁻¹ and W₀₂=4.7×10⁴ s⁻¹ accounting Boltzmann distribution of population over two excited Stark levels of the excited state of erbium ions. Employment of this model improves the fit between the experiment and the theory for the ⁵F₅ state of Ho³⁺ ion in YAG as well. Strong influence of the parameters of the non-linear theory of MR, i.e. the reduced matrix elements U^(k) of electronic transitions and the phonon factor of crystal matrix η on the spontaneous MR rates was observed experimentally. The smaller these parameters the slower the spontaneous MR W₀. This fact can be used for searching new active crystal laser media for the mid-IR generation.     

Effects of reduction treatment on the photorefractive properties of Pb0.5Ba0.5Nb2O6

Lead barium niobate is a new photorefractive material of high interest for a variety of applications including holographic storage. Pb_0.5Ba_0.5Nb₂O₆ crystals have been grown by the Bridgman method, and the effects of heat treatments on their photorefractive properties were investigated using Ar ion laser at λ=514.5 nm. The color and absorption spectrum of the crystals varied depending on the oxygen partial pressure during heat treatment. The oxygen diffusivity was estimated to be in the order of 10⁻⁶ and 10⁻⁵ cm²/h at 425 and 550 °C, respectively. Reduction treatment at an oxygen pressure of 215 mTorr increased the effective density of photorefractive charges about three times from 8.0×10¹⁵ to 2.2×10¹⁶ cm⁻³ and made the charge transport more electron-dominant. As a result, the maximum gain coefficient improved from 5.5 to 13.8 cm⁻¹. A diffraction efficiency as high as 70% was achieved in a reduced crystal.     

Application of decomposed species generated by a heated catalyzer to ULSI fabrication processes

In this paper we report on surface nitridation of SiO₂ and on photoresist removal by using species decomposed from NH₃ or H₂ and generated by a heated tungsten catalyzer. The top surface of SiO₂/Si(100) is nitrided at temperatures as low as 300 °C using species decomposed from NH₃ species. The removal of heavy-doped, as high as 1×10¹⁶ cm⁻², ion-implanted photoresist is realized using atomic hydrogen.     

Bias-dependent radiation damage in high-resistivity silicon diodes irradiated with heavy charged particles

High-resistivity p⁺–n–n⁺ planar diodes were irradiated with neutrons to fluences up to 2×10¹⁴ cm⁻² 1 MeV neutron NIEL equivalent and with pions to 0.47×10¹⁴ cm⁻². Special care was taken to irradiate samples under strictly controlled conditions (temperature, bias). The influence of detector biasing on the effective dopant concentration as measured with the C–V method was studied. Permanently biased diodes exhibit about two times higher |N_eff| after beneficial annealing has been completed. After switching off the bias the difference between biased and unbiased samples diminishes with a temperature-dependent annealing time. Part of the difference is attributed to a bistable defect since it recovers if the bias is re-applied for a few days at room temperature. The bias-induced damage was estimated to result in a 40–70 V addition to required bias for detectors in the ATLAS SCT after 10 years of LHC operation.     

Heavy ion radiation damage in double-sided silicon strip detectors

A ²⁵²Cf fission fragment source was used to produce heavy-ion radiation damage in a double-sided silicon strip detector. It was found that a good quality fission fragment spectrum (as determined by the peak to valley ration N_L/N_V) could not be achieved for radiation incident on the p⁺ face of the detector. However, for radiation incident on the n⁺ face, the ratio N_L/N_V remained adequate up to an accumulated dose of 4×10⁶ fragments mm⁻². For the measurement of alphas, typical resolution deteriorated from an initial 30 keV FWHM to 50 keV FWHM at a dose of 8×10⁶ fragments mm⁻² for incident on the n⁺ face, and 6×10⁶ for radiation incident on the p⁺ face. The interstrip resistance in one region of the n⁺ face broke down completely after a relatively small radiation doses incident on that face. Further investigation of this is still required.     

Electrochemical preparation and characterisation of ruthenium bisulphide films

This paper embodies the first report on the electrochemical deposition of RuS₂ thin films. The as-deposited and heat-treated films (in argon atmosphere) were characterized by XRD, SEM and UV-VIS-NIR spectrophotometry. The polycrystalline deposits of RuS₂ obtained indicated a cubic structure with a lattice constant of 5.685 Å, an average grain size around 3 μm, and an absorption co-efficient of 5 × 10⁴ cm⁻¹. The optical band gap was found to be 1.48 eV.     

Photoluminescence of Ga0.94In0.06As0.13Sb0.87 solid solution lattice matched to InAs

The lattice matched Ga_0.94In_0.06As_0.13Sb_0.87 quaternary solid solutions were grown by liquid phase epitaxy on (1 0 0) oriented InAs substrates from In rich melt. The p-type GaIn_0.06As_0.13Sb layers were intentionally undoped and their hole concentration was about p5×10¹⁶ cm⁻³, while n-type GaIn_0.06As_0.13Sb layers were slightly doped with Te and their electron concentration was about n10¹⁷ cm⁻³. Photoluminescence spectra exhibit single unresolved emission band in the spectral region from 0.65 to 0.8 eV for both types. Spectra were decomposed to elementary Gaussian components. The main mechanisms of radiative recombination were determined for both types of material.