Dielectric properties and resistance to fatigue failure of different barrier layers prepared on flexible stainless-steel foils by ion-beam assisted deposition

A stainless-steel foil is an attractive candidate for the substrate of flexible display devices and integrated solar modules. For electrical insulation and ion diffusion reduction, a barrier layer should be coated on the stainless-steel foil surface. In this study, different barrier layers such as SiO_x, TaO_x, TiO_x and TaO_x/SiO_x were prepared on the flexible stainless-steel foils (SUS 304) by ion-beam assisted deposition. The dielectric properties of the barrier layers, including resistance, reactance, leakage current density, breakdown field strength and performance index, were investigated. The resistance to fatigue failure of the barrier layers was evaluated by insulating tests after the specimen foils were flattened. The results show that the dielectric properties and the resistance to fatigue failure of the TaO_x/SiO_x composite barrier layer are better than those of the SiO_x or the TaO_x barrier layer. The best dielectric properties and resistance to fatigue failure are achieved with the 4-μm thick TaO_x/SiO_x composite barrier layer.     

Surface energy modification of SiOxCyHz film using PECVD by controlling the plasma processes for OMCTS (Si4O4C8H24) precursor

SiO_x films produced from octamethylycyclodisiloxane (Si₄O₄C₈H₂₄, OMCTS) with oxygen carrier gas have a low contact angle. The surface energy of the SiO_x films can be changed by controlling the plasma process. SiO_xC_yH_z films were deposited on polycarbonate substrates by plasma enhanced chemical vapor deposition using OMCTS without oxygen carrier gas. The input power in the radio frequency plasma was changed to optimize the surface energy of the resulting SiO_xC_yH_z film. The plasma diagnostics, surface energy and surface morphology were characterized by optical emission spectrometry, contact angle measurements and atomic force microscopy, respectively. The chemical properties of the coatings were examined by Fourier transform infrared spectroscopy. The surface energy of the SiO_xC_yH_z films produced using a room temperature plasma process could be controlled by employing the appropriate intensity of excited neutrals, ionized atoms, molecules and energy (input rf power and bias), as well as the suitable dissociation of OMCTS.     

Co-sputtered oxide thin film encapsulated organic electronic devices with prolonged lifetime

Effective top-side thin film encapsulation for organic light-emitting devices (OLEDs) was achieved by deposition of a multi-layer water diffusion barrier stack to protect the device against moisture permeation. The barrier stack was formed by alternative depositions of co-oxide and fluorocarbon (CF_x) films. The co-oxide layer was fabricated by magnetron co-sputtering of silicon dioxide (SiO₂) and aluminum oxide (Al₂O₃). While the CF_x layer was formed by plasma enhanced chemical vapor deposition. The water vapor transmission rate of the optimized diffusion barrier stack can be down to 10^− 6 g/m²/day. The OLEDs encapsulated with the multilayer stack have been shown to have operation lifetime of over 18,000 h which is nearly the same as devices with conventional glass-cover encapsulation.     

Investigation of brittle failure in transparent conductive oxide and permeation barrier oxide multilayers on flexible polymers

An oxide multilayer structure—consisting of an indium zinc oxide (IZO) conductive layer, a silicon oxide (SiO_x, x = 1.8) water vapor permeation barrier, and an aluminum oxide (Al₂O₃) interlayer—coated on polyethylene terephthalate (PET) is proposed as a transparent flexible substrate for display and photovoltaic applications. Vital properties of the multilayer, such as the low water vapor impermeability of the SiO_x barrier and the high conductance of the IZO film, degraded considerably because of the crack formation in bend geometries, attributed to the large difference between elastic properties of the oxide films and polymers. In order to suppress the crack formation, a 10-nm-thick Al₂O₃ interlayer was sputtered on Ar ion-beam treated PET surfaces prior to a SiO_x plasma-enhanced chemical vapor deposition (PECVD) process. Changes in the conductance and water vapor impermeability were investigated at different bending radii and bending cycles. It was found that the increases in resistance and water vapor transmission rate (WVTR) were significantly suppressed by the ion-beam PET pretreatment and by the sputtered Al₂O₃ interlayer. The resistance and WVTR of IZO/SiO_x/Al₂O₃/PET systems could be kept low and invariable even in severely bent states by choosing the SiO_x thickness properly. The IZO (135 nm)/SiO_x (90 nm)/Al₂O₃ (10 nm)/PET system maintained a resistance of 3.2 × 10^− 4 Ω cm and a WVTR of < 5 × 10^− 3 g m² d^− 1 after 1000 bending cycles at a bending radius of 35 mm.     

The deposition and optical properties of Ge1−xCx thin film and infrared multilayer antireflection coatings

The effects of deposition parameters on the deposition rate, microstructure, and composition of Ge_1−xC_x thin films prepared by plasma enhanced chemical vapor deposition were studied and the films' infrared optical properties were investigated. The results show that the carbon content of these films increases as the precursor gas flow ratio of CH₄:GeH₄ increases, while the infrared refractive index of these films decreases from 4 to 2. The deposition rate increases with the radio-frequency power and reaches a constant value when the power goes above 60 W. Ge_1−xC_x/diamond-like carbon infrared antireflection coatings were prepared, and the transmittance of the coatings in the band of 8 to 14 μm was 88%, which is superior to that of Zinc Sulfide substrate by 14%.     

Thin film passivation of organic light emitting diodes by inductively coupled plasma chemical vapor deposition

The characteristics of an SiN_x passivation layer grown by a specially designed inductively coupled plasma chemical vapor deposition (ICP-CVD) system with straight antennas for the top-emitting organic light emitting diodes (TOLEDs) are investigated. Using a high-density plasma on the order of ∼ 10¹¹ electrons/cm³ formed by nine straight antennas connected in parallel, a high-density SiN_x passivation layer was deposited on a transparent Mg-Ag cathode at a substrate temperature of 40 °C. Even at a low substrate temperature, single SiN_x passivation layer prepared by ICP-CVD showed a low water vapor transmission rate of 5 × 10^− 2 g/m²/day and a transparency of ∼ 85% respectively. In addition, current-voltage-luminescence results of the TOLED passivated by the SiN_x layer indicated that the electrical and optical properties of the TOLED were not affected by the high-density plasma during the SiN_x deposition process.     

High-rate deposition and mechanical properties of SiOx film at low temperature by plasma enhanced chemical vapor deposition with the dual frequencies ultra high frequency and high frequency

A high efficiency, high-rate deposition process was developed for silicon oxide films using plasma enhanced chemical vapor deposition (PECVD) with an additional ultra high frequency (UHF) power with high frequency (HF) bias. The effect of the UHF input power with HF bias on the anti-scratch properties of the silicon oxide films was examined. The hybrid plasma process was also examined by advanced plasma source. Dissociation of the octamethylycyclodisiloxane (OMCTS) precursor was controlled by the plasma processing parameters. SiO_x films were deposited on polycarbonate substrates by PECVD using OMCTS and oxygen carrier gas. The rate of SiO_x film deposition increased with increasing input energy. The plasma was analyzed by optical emission spectroscopy. The deposition rate was characterized using an alpha-step. The mechanical properties of the coatings were examined using a nano-indenter and pencil hardness measurements. The chemical properties of the coatings were examined by Fourier transform infrared spectroscopy. The deposition rate of the SiO_x films was controlled by the dissociation of OMCTS using the appropriate intensity of excited neutrals, ionized atoms and input UHF input power with HF bias at room temperature.     

Effect of rapid thermal annealing time on Au/SiOx film prepared by hot wire assisted plasma enhanced chemical vapour deposition technique

In this study, nanocomposite material consisting of silicon suboxide (SiO_x) film embedded with gold nanoparticles (Au NPs) was synthesized using hybrid technique combining hot wire evaporation and plasma enhanced chemical vapour deposition (PECVD) method. As prepared Au/SiO_x films were rapid thermal annealed at constant temperature of 800 °C for different annealing times from 30 to 120 s. The use of tungsten filament for Au evaporation allowed the effective reduction of the silicon content. Depth profiling analysis confirmed the embedded in structure of Au/SiO_x film. FESEM, UV/VIS/NIR and PL spectroscopy were utilized to study the structural and optical properties of annealed Au/SiO_x film for different times. Embedded Au NPs diffused towards the surface of SiO_x film agglomerate and increased in size with an increase in annealing time. Localized surface plasmon resonance (LSPR) peak induced by Au NPs in SiO_x, which is dependent on annealing time, was clearly observed in optical spectra. Intensity and position of the PL peak located at 580 nm experienced a decrease and red-shift, as annealing time increased.     

Effect of the interface on the electrical properties of an indium zinc oxide/SiOx multilayer

In this work, indium zinc oxide (IZO) films have been deposited on a polyethylene terephthalate substrate coated with an SiO_x film. Based on a comparative investigation of an IZO monolayer and an IZO/SiO_x multilayer, it is shown that oxygen has a great effect on the electrical properties of the thin films. A mechanism is described to explain the influence of the introduced SiO_x buffer layer. It is considered that an interfacial layer has come into being at the interface between the SiO_x layer and IZO layer, and the properties of this layer have been evaluated. Moreover, the electrical properties of the IZO/SiO_x multilayer have been successfully improved by controlling the oxygen content of the interfacial layer.     

Characteristics of SiOxNy films deposited by inductively coupled plasma enhanced chemical vapor deposition using HMDS/NH3/O2/Ar for water vapor diffusion barrier

SiO_xN_y thin films were deposited by inductively coupled plasma enhanced chemical vapor deposition (ICP-PECVD) using hexamethyldisilazane (HMDS, 99.9%)/NH₃/O₂/Ar at a low temperature, and examined for use as a water vapor diffusion barrier. The film characteristics were investigated as a function of the O₂:NH₃ ratio. An increase in the O₂:NH₃ ratio decreased the level of impurities such as -CH_x, N-H in the film through a reaction with oxygen. Thereby, a more transparent and harder film was obtained. In addition, an increase in the O₂:NH₃ ratio decreased the nitrogen content in the film resulting in a more SiO₂-like SiO_xN_y film. Using SiO_xN_y fabricated with an O₂:NH₃ ratio of 1:1, a multilayer thin film consisting of multiple layers of SiO_xN_y/parylene layers was formed on a polyethersulfone (PES, 200 μm) substrate, and its water vapor transmittance rate (WVTR) was investigated. A WVTR < 0.005 g/(m² day) applicable to organic thin film transistors or organic light emitting diodes was obtained using a multilayer composed of SiO_xN_y (260 nm)/parylene (< 1.2 μm) on the PES.     

Physico-chemical, structural and physical properties of hydrogenated silicon oxinitride films elaborated by pulsed radiofrequency discharge

Films prepared by radiofrequency pulsed plasma enhanced chemical vapor deposition from a mixture of silane (SiH₄) and nitrous oxide (N₂O) were studied. Variation of operating conditions (flow rate, deposition temperature ...) resulted in films with chemical compositions changing from hydrogenated silicon oxynitride (SiO_xN_y:H) to silicon oxide (SiO_x:H). Infrared and Rutherford backscattering spectroscopy studies of the as-deposited films revealed different SiO_x arrangements disturbed by Si-N bonds and H-Si ≡ Si_(3 − x)O_x clusters depending on the substrate temperature and the N₂O/SiH₄ ratio. For films obtained using low N₂O/SiH₄ rations and annealed at temperature higher than 1273 K, Raman spectroscopy and microscopy analyses revealed the presence of silicon nanocrystals embedded in a matrix containing Si, O, and N. Spectroscopic ellipsometry revealed the presence of silicon nanocrystals along with two other amorphous phases (SiO_xN_y and SiO₂) in annealed samples. The electrical characteristics of annealed films obtained from capacitance-voltage measurements indicated a stable charge trapping in ultra-thin SiO_xN_y layers. These preliminary results suggest that Si-nc containing silicon oxynitride layers can be potential candidates to be used in the floating gate fabrication of memory devices.     

Electrical properties of Al2O3 and AlPxOy dielectric layers on InP

Al₂O₃ and AlP_xO_y dielectric layers have been deposited on n-type InP substrates and the electrical properties of the interfaces have been evaluated by current-voltage and capacitance-voltage (C-V) measurements on metal- insulator-semiconductor diodes. Layers were deposited by combining trimethyl- aluminum, oxygen and phosphine in a low pressure chemical vapor deposition reactor in which the oxygen was excited in an r.f. plasma prior to mixing with the reactive gases in the deposition zone. The Al₂O₃ layers were invariably too conductive for meaningful C-V measurements; however, the AlP_xO_y layers not only were of high resistivity (? > 10¹⁶ Ω cm) but also exhibited interfacial properties superior to those of SiO₂ layers on InP. The surface potential could be modulated over the full band gap of InP since the surface density was less than 10¹¹ cm^-2 eV^-1 over much of the band gap.     

Effect of impinging ion energy on the substrates during deposition of SiOx films by radiofrequency plasma enhanced chemical vapor deposition process

Radiofrequency (13.56 MHz) plasma enhanced chemical vapor deposition process is used for deposition of SiO_x films on bell metal substrates using Ar/hexamethyldisiloxane/O₂ glow discharge. The DC self-bias voltage developed on the substrates is observed to be varied from − 35 V to − 115 V depending on the RF power applied to the plasma. Plasma potential measurements during film deposition process are carried out by self-compensated emissive probe. The deposited films are characterized by Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), nanoindentation, nano-scratch test and thermogravimetric analysis. The characterization results show strong dependency of the SiO_x films properties on the energy of the ions impinging on the substrates during deposition. Analysis of Raman spectra indicates an increase in vitreous silica content and reduction in defective Si-O-Si chemical structure in the deposited SiO_x films with increasing ion energy impinging on the substrates. The increase in inorganic (Si and O) content in the SiO_x films is further confirmed from XPS analysis. The growth of SiO_x films with more inorganic content and defect free chemical structure apparently contribute to the increase in their hardness and scratch resistance behavior. The films show higher thermal stability as the energy of the ions arriving at substrates increases with DC self-bias voltage. The possibility of using SiO_x films for surface protection of bell metal is also explored.     

Plasma deposition of n-SiOx nanocrystalline thin film for enhancing the performance of silicon thin film solar cells

In this paper, we firstly optimized the properties of n-SiO_x nanocrystalline thin film through tuning deposition parameters by plasma enhanced chemical vapor deposition, so that we can actively control the properties of materials obtained. Secondly, we proposed using n-SiO_x/Al as back reflector for amorphous silicon (a-Si:H) solar cells. Compared to Al single-layer as back reflector, adding an n-SiO_x layer into the back reflector could improve the solar cell performance, which not only enhances the short circuit current density by an improvement of spectral response in the wavelength range of 550-750 nm, but also improves the open circuit voltage. With an optimized n-SiO_x/Al back reflector, a-Si:H solar cells with an intrinsic layer thickness of 270 nm show 13.1% enhancement in efficiency. In addition, a-Si:H/μc-Si:H tandem solar cells with n-SiO_x as intermediate reflector were also researched. As a result, it evidently balanced the current matching between top and bottom cell.     

Deposition of functional coatings on polyethylene terephthalate films by magnetron-plasma-enhanced chemical vapour deposition

Magnetron-plasma enhanced chemical vapour deposition (PECVD) is a process tool which allows the deposition of plasma polymer coatings at process pressures below 1 Pa. The striking features of this technology are the relatively easy realisation of large area deposition as well as the possibility of the combination with sputtering processes for multilayer coating designs. SiO_xC_y coatings were deposited on polymer film in a roll-to-roll deposition machine. Dynamic deposition rates as high as 120 nm?m/min were achieved. The process was set up with both the monomer hexamethyldisiloxane and the monomer tetraethylorthosilicate (TEOS) and with mixtures thereof. The coatings were analysed by Fourier transform infrared spectroscopy. This method identifies the existence of different types of Si-O bonding in the layer. The results show how the layer properties are linked to the plasma parameters of the deposition process. The properties were compared to sputtered SiO₂ and to layers obtained by other PECVD processes. Elastic recoil detection analysis (ERDA) was used in order to determine the composition of the samples. Both IR spectroscopy and ERDA revealed that the usage of TEOS provided more SiO₂-like layers. The process was applied to the deposition of optical multilayer coating in a roll-to-roll coating system.     

Formation of size-controlled silicon nanocrystals in plasma enhanced chemical vapor deposition grown SiOxNy/SiO2 superlattices

Size controlled silicon nanocrystals (SiNC) in silicon oxynitride matrix were prepared using plasma enhanced chemical vapor deposition. The as-deposited superlattices (SLs) and the corresponding bulk films were treated by thermal annealing. Hydrogen effusion was performed during the heating up by choosing a sufficiently low heating ramp. The phase separation of the layers into SiNCs and surrounding oxynitride matrix was studied at temperatures of up to 1150 °C. The influence of the annealing temperature on SiO_xN_y/SiO₂ - SLs with varying SiO_xN_y layer thickness was investigated by several analytical techniques including variable angle spectroscopic ellipsometry, photoluminescence (PL) spectroscopy, x-ray photoelectron spectroscopy, Fourier transform infrared spectrometry (FTIR) and transmission electron microscopy (TEM). Before annealing FTIR investigations show in addition to the expected Si-O bonds also the formation of nitrogen and hydrogen related bonds. The shift of the Si-O-Si stretching vibration to higher wave numbers after annealing indicates phase separation. The disappearance of the hydrogen related bonds indicates the hydrogen effusion. The PL signal is rising significantly with increasing annealing temperature and the PL peak position is strongly related to the thickness of the SiO_xN_y sublayers due to quantum confinement effects. TEM investigations confirm the size-controlled growth of SiNCs within the oxynitride matrix. The role of incorporated nitrogen and hydrogen is discussed.     

Atmospheric pressure PECVD of SiO2 thin film at a low temperature using HMDS/O2/He/Ar

SiO₂-like thin films were deposited at a low temperature (< 50 °C) by a remote-type, atmospheric pressure plasma enhanced chemical vapor deposition (AP-PECVD) using a pin-to-plate-type, dielectric barrier discharge with gas mixtures containing hexamethyldisilazane (HMDS)/O₂/He/Ar. The film characteristics were investigated according to the HMDS and O₂ flow rates. To obtain a more SiO₂-like thin film, an adequate combination of HMDS and oxygen flow rates was required to remove the -(CH₃)_x bonding in the HMDS and to oxidize the Si in HMDS effectively. At the optimized flow rates, the surface roughness of the SiO₂-like thin film was also the lowest. By using HMDS (50 sccm) and O₂ (500 sccm) flow rates in the gas mixture of HMDS/O₂/He (2 slm)/Ar (600 sccm), SiO₂-like thin films with a low impurity (< 6.35% C) were obtained at a deposition rate of approximately 10.7 nm/min.     

High via resistance induced by ionized metal plasma vapor deposition of titanium liner film

For via structures landed on aluminum lines, a significant increase of via resistance has been observed if the titanium (Ti) via liner is introduced by the ionized metal plasma (IMP) vapor deposition method instead of the standard physical vapor deposition method. To understand the underlying mechanism of this phenomenon, the reaction between the IMP deposited Ti and the aluminum under-layer has been studied. The experimental results indicate that during IMP-Ti deposition, energetic titanium ions react with the aluminum under-layer, forming a resistive titanium aluminide (TiAl_x) layer. This reaction can be further enhanced by accelerating the titanium ions with a more negative substrate bias. The existence of this TiAl_x layer at the via interface contributes to the elevated via resistance that has been observed at subsequent electrical parametric testing.     

Formation of gas barrier films by Cat-CVD method using organic silicon compounds

Silicon nitride (SiN_x) and silicon oxynitride (SiO_xN_y) films have been formed by catalytic chemical vapor deposition (Cat-CVD) method using hexamethyldisilazane (HMDS). Addition of NH₃ gas and increase in gas pressure can prevent carbonization of tungsten (W) catalyzer. These SiO_xN_y films have high gas barrier ability compare to the case of SiO_xN_y films using SiH₄ and thus are expected for novel sealing films.     

Effect of oxygen pressure of SiOx buffer layer on the electrical properties of GZO film deposited on PET substrate

The present work was made to investigate the effect of oxygen pressure of SiO_x layer on the electrical properties of Ga-doped ZnO (GZO) films deposited on poly-ethylene telephthalate (PET) substrate by utilizing the pulsed-laser deposition at ambient temperature. For this purpose, the SiO_x buffer layers were deposited at various oxygen pressures ranging from 13.3 to 46.7 Pa. With increasing oxygen pressure during the deposition of SiO_x layer as a buffer, the electrical resistivity of GZO/SiO_x/PET films gradually decreased from 7.6 × 10^− 3 to 6.8 × 10^− 4 Ω·cm, due to the enhanced mobility of GZO films. It was mainly due to the grain size of GZO films related to the roughened surface of the SiO_x buffer layers. In addition, the average optical transmittance of GZO/SiO_x/PET films in a visible regime was estimated to be ~ 90% comparable to that of GZO deposited onto a glass substrate.