利用后向受激喇曼散射压缩脉冲宽度

无论在喇曼振荡器还是在喇曼放大器中,都可以利用后向受激拉曼散射把几十个ns的泵浦激光脉冲转换为几个ns的斯托克斯强脉冲。已报导的压缩比是～10,能量转换效率是～50％。 脉冲压缩不能由前向受激喇曼散射实现的原因是,泵波与前向斯托克斯波总是差不多一起传播,     

PS光泵高压H_2产生高阶受激喇曼散射

我们利用脉冲Nd:YAG锁模序列激光经过一级放大输出约40mJ的基波光或其倍频光,分别泵浦气压为20kg/cm~2(常温)的氢气喇曼池(H_2的纯度为99.999％),其输出经棱镜分光。结果用0.53μm倍频光泵浦时,仅获得符合正常喇曼频移(4155.2cm~(-1))的三级反斯托克斯光束和一级斯托克斯光束(在319.9nm至683.0nm范围),波长分别为:319.9nm,368.9nm,     

高压甲烷的受激喇曼散射研究

我们研究了高压甲烷的受激喇曼散射,泵浦激光为Nd:YAG调Q脉冲激光,得到一阶斯托克斯散射光,脉冲能量达到20mJ,并观察到1至5阶反斯托克斯散射波。     

KrF准分子激光泵浦H_2受激喇曼散射

利用KrF激光泵浦高压H_2,产生受激喇曼散射(SBS),得到时间宽被压缩的Stokes光和Anti-Stokes光,一阶Stokes光的发散角被压缩到泵浦光的1/3。研究了缓冲气体对Stokes光转换效率的影响。     

高压H_2受激喇曼散射中二阶斯托克斯轴向分量的实验研究

受激喇曼散射含有两种物理过程,即纯受激过程和参量四波混频过程。在4～24个气压范围内,我们进行H_2的受激喇曼散射实验,报道了一阶Stokes(简称S_1)中的这两种物理过程。我们进行的反斯托克斯研究则证实它们是由相位匹配的四波混频与相位失配的四波混频组成。本文对二阶Stokes(简称S_2,波长953.6nm)进行研究,在所用实验条件下观察了它的轴向散射分量变化。     

乙醇溶液中后向受激喇曼散射的瞬态效应——亚皮秒喇曼光脉冲的产生

本文报道了在乙醇溶液中实现后向受激喇曼散射光脉冲产生的实验装置和结果,得到了脉宽为280fs、压缩比达100倍的喇曼光脉冲,提出了喇曼超压窄区的概念。     

高压氢石英管喇曼池中受激喇曼散射的研究

近来由于染料激光器的出现,人们希望借助于受激喇曼散射技术获得可调谐的紫外光源,将可调谐范围扩展到紫外波段.特别是高压氢中的受激喇曼散射,位移大,效率高,但是使用时必须附加真空及充高压氢系统,因此使用时不很方便.本文报道石英管式喇曼散射管.充一次气可以长久使用.     

受激喇曼散射

在SRS过程中引起散射中心振动能级的跃迁,为一种双光子过程。SRS光的产生伴随着散射中心的强烈振动形成的强相干振动波,一旦第一级Stokes光产生,各级散射光被调制而产生,故又可看作一种参量振荡过程。能量部分转换为物质的激发     

低温下H_2中的反斯托克斯受激喇曼散射

本文描述了低温下H_2中266nm和283nm激光的受激喇曼散射过程(ASSRS).在液氮温度下,2～6级反斯托克斯(AS)散射均比常温时的结果高.这一低温效应对高级AS散射尤其有效..     

连续调谐波导型H_2受激振动喇曼散射的研究

设计和研制了一台石英毛细管波导型H_2喇曼池,用450nm染料激光研究了H_2的受激振动喇曼散射,测定了一阶Stokes波输出能量与H_2气压之间的依赖关系。最高能量转换效率为20％。用Oxazine-1染料激光作泵浦源获得三阶Stokes信号,得到的红外喇曼散射最长波长达6.57μm。     

高压H_2气受激喇曼移频器的实验研究

本文报道RS-I型高效率高压H_2气受激喇曼移频器的实验装置和实验结果,观察到一至四阶斯托克斯线和一至八阶反斯托克斯线,总能量转换效率达56％,一阶斯托克斯能量转换效率达34％。     

长脉冲非偏振准分子激光在H_2中的受激喇曼散射

实验研究了X射线预电离XeCl准分子激光器在氢气中的受激喇曼散射。用光电管观察到S_1、S_2和S_3斯托克斯线输出。对受激喇曼散射导致光束发散角减小和脉宽变窄进行了理论分析。     

Stimulated rotational Raman conversion in H2, D2, and HD

Stimulated rotational Raman conversion has been efficiently demonstrated in all three molecular hydrogen isotopes with a 532-nm Q-switched pump source. Optimum gas pressures and pump focusing have been determined. Single pass conversion efficiencies of 80%, 75%, and 65% have been achieved at the first Stokes wavelengths with H₂ , D₂, and HD, respectively. The maximum efficiency is generally limited by further Raman conversion of the initially generated Stokes light. The thresholds were found to increase in the order H₂ 22. The relative thresholds of H₂ and D₂ are reasonably consistent with the calculated steady-state gains based on the population statistics and the linewidth data. Intermediate frequency shifts such as these may be useful by themselves, or in combination with other nonlinear techniques, as methods to achieve specific wavelengths for system applications     

16μm仲氢受激喇曼激光器

研制了TEACO激光泵浦的仲氢受激喇曼激光器.讨论了影响喇曼转换效率的主要因素.最大输出能量达536mJ,能量转换效率大于13%,量子转换效率超过20%.     

Efficient backward and forward pumping CW Raman amplification for InGaAsP laser light in silica fibres

By pumping a small-core single-mode silica fibre with a 1.32 ?m CW Nd:YAG laser, continuous-wave Raman amplification of InGaAsP laser diode light, with unsaturated gain as high as 21 dB, has been obtained in both backward as well as forward pumping configurations.     

Carbon nanotubes grown from nickel catalyst pretreated with H2/N2 plasma

To find the possibility of using a low-temperature process in growing carbon nanotubes (CNTs), nickel catalyst converted from film into particles by microwave H₂/N₂ plasma and the following CNT growth are all kept at a low temperature of 250 °C. The flat panel display industry requests low-temperature rather than the traditional high-temperature process for CNT growth. It was found that H₂/N₂ proportion is very sensitive to nickel morphology and the subsequent CNT growth. Better nickel and CNTs morphology are obtained for the proportion H₂/N₂=3/1 than those for the generally used pure hydrogen environment. The process pressure selection during pretreatment can determine whether CNTs are grown or not. The diameter of growing CNTs is proportional to nickel particle size. Field emission results support field amplification coefficient claim. The long tube length and high tube density of growing CNTs demonstrate low threshold electric field. This work shows the potential to use H₂/N₂ instead of pure hydrogen plasma in growing qualified CNTs applied in display industry.     

高压氢受激喇曼散射中一阶斯托克斯散射的参量四波混频过程

本文讨论了在高压H_2受激喇曼散射中产生一阶斯托克斯散射的参量四波混频过程。指出在一定的条件下,可以产生一阶斯托克斯散射的参量四波混频,并可以在能量转换过程中起重要作用。由实验得到了一阶斯托克斯参量四波混频过程与泵浦强度及H_2压力的依赖关系,     

Stimulated rotational Raman scattering in CO2-pumped para-H2

Stimulated rotational Raman scattering in a 300 K multipass cell filled with para-H2with a single-mode CO2pump laser was studied using a single-mode OPO as a probe laser at the Stokes frequency for the So(0) transition. Amplification and pump depletion are examined as a function of incident pump energy. For an incident CO2pump laser energy of 1.5 J, a photon conversion efficiency of 47 percent is observed.     

Effects of CH2F2 and H2 flow rates on process window for infinite etch selectivity of silicon nitride to ArF PR in dual-frequency CH2F2/H2/Ar capacitively coupled plasmas

The process window for the infinite etch selectivity of silicon nitride (Si₃N₄) layers to ArF photoresist (PR) and ArF PR deformation were investigated in a CH₂F₂/H₂/Ar dual-frequency superimposed capacitive coupled plasma (DFS-CCP) by varying the process parameters, such as the low frequency power (P_LF), CH₂F₂ flow rate, and H₂ flow rate. It was found that infinitely high etch selectivities of the Si₃N₄ layers to the the ArF PR on both the blanket and patterned wafers could be obtained for certain gas flow conditions. The H₂ and CH₂F₂ flow rates were found to play a critical role in determining the process window for infinite Si₃N₄/ArF PR etch selectivity, due to the change in the degree of polymerization. The preferential chemical reaction of hydrogen with the carbon in the hydrofluorocarbon (CH_xF_y) layer and the nitrogen on the Si₃N₄ surface, leading to the formation of HCN etch by-products, results in a thinner steady-state hydrofluorocarbon layer and, in turn, in continuous Si₃N₄ etching, due to enhanced SiF₄ formation, while the hydrofluorocarbon layer is deposited on the ArF photoresist surface.