单脉冲雷达接收机DAGC设计

自动增益控制（AGC）电路是单脉冲雷达实现精确目标跟踪的重要组成部分。通过对比、分析两种不同的AGC设计方法,提出了一种可用于单脉冲雷达接收机增益控制的数字AGC设计方案,并利用高速A/D、D/A芯片、现场可编程逻辑门阵列等集成器件设计了单脉冲雷达接收机的数字增益控制电路。     

基于前导的步进式AGC算法研究及仿真实现

AGC是无线通讯系统的重要组成部分。文中对基于802.16d的协议进行了分析，阐述了如何利用前导设计一个数字基带部分的步进式AGC的具体方法，同时给出了AGC重要参数的选择方案。     

大动态范围AGC电路在接收机中的应用

自动增益控制电路(AGC)是接收机的重要控制电路之一。具体分析了自动增益控制电路的工作原理以及AGC的分类方式。利用可变增益放大器AD8367和其他模拟电路以及外部检波方式,设计了思维简洁、电路控制速度快的峰值型AGC电路。详细解释了芯片版图、增益控制与电压关系以及基于AD8367的闭环AGC电路系统。实验结果表明,基于AD8367的两级AGC控制电路频率达到70 MHz,动态范围80 dB等预期指标,可以方便地调整所需要的输出电平值,确保接收机正常工作。     

带接收AGC的解调器芯片RF2667及其应用

RF2667是RFMicroDevice公司生产的带接收AGC的CDMA/FM解调器芯片。该芯片集成了完整的中频自动增益控制 (AGC)放大器和正交解调器 ,可用在双模式的CDMA/FM蜂窝移动通信系统和PCS系统中。文中介绍了RF2667的原理、特点和典型应用电路。     

一种有效的内环AGC电路

设计了一款应用于移动数字电视调谐器芯片中的数字式内环自动增益控制(Automatic Gain Control,AGC)电路。该控制电路采用的算法有效避免了死循环的问题,并且提高了AGC电路的响应时间。电路设计利用Verilog硬件描述语言进行描述,通过了功能仿真并在FPGA上进行了验证。最终采用TSMC 0.13μm CMOS工艺,完成了电路版图。芯片面积在126μm×106μm,平均功耗在3.876 mW左右。     

CDMA/FM接收AGC和解调器芯片RF9957及其应用

RF9957是RF Micro Device公司生产的带接收AGC的CDMA／FM解调器芯片。该芯片中集成了完整的中频自动增益控制（AGC）放大器和正交解调器，可用于双模式的CDMA／FM蜂窝移动通信系统和PCS系统中。文中介绍了RF9957的原理、特点和典型应用电路。     

电子对抗环境下AGC设计与实现

自动增益控制电路(AGC)是数字接收机的重要组成部分,用以减小量化损耗.通过分析数控可变增益放大器(VGA)的工作原理,提出AGC工程实现算法.同时分析了算法的稳态误差,给出了误差改善措施.基于AD8348芯片的工程实测结果表明,该算法能够较好地实现增益控制,满足电子对抗环境下的应用需求.     

一种输出电压可编程的闭环CMOS VGA的设计

利用SMIC0．18μm COMS混合工艺,针对无线通信系统中的信号接收机,设计了一个能够工作在40MHz频带内的中频闭环可变增益放大器VGA,它包括可编程的输出电压和数字化的自动增益控制AGC电路。可编程的输出电压使得该VGA能够很好的适应不同应用方案下的动态范围要求,通常情况下,AGC电路依靠DSP基带芯片实现,然而,这里重点讨论从DSP芯片分离出来的数字AGC电路,独立的AGC电路使得VGA和DSP可以各自集中精力于自己的工作,降低部件相关性。该闭环VGA具有20dB增益调整范围。可编程输出AC电压峰峰值Vp-p,能够以每50mV为一档从100mV编程到300mV。     

带中频AGC的W—CDMA发送调制器RF9678

RF9678是带中频AGC的W—CDMA发送调制器。芯片中集成了完整的正交调制器和中频自动增益控制(AGC）放大器，被设计用于W—CDMA系统中的发送单元。本文介绍了RF9678的原理特点及其典型应用电路。     

数字AGC的设计与实现

分析了散射通信系统的特点和AGC的原理,并介绍了2种散射通信中常用AGC电路及其不足之处。然后用VHDL语言设计实现了一种数字AGC电路,此方案采用Altera公司的EP1S40F1020I6芯片,可以实现40dB动态范围的控制,并且具有控制精度高,调节速度快,受环境影响小,稳定性和可靠性高等优点。最后与采用AD8367方案的模拟AGC电路进行联合控制,并进行了实际测试,测试结果表明该设计可以实现65dB动态范围的控制。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.