退火温度与ZAO透明导电薄膜晶体结构及特性关系的研究

用射频磁控溅射ZAO陶瓷靶的方法在石英衬底上成功制备了ZAO透明导电薄膜。用X射线衍射仪（XRD）、紫外可见（UV—Vis）分光光度计、扫描电子显微镜（SEM）、原子力显微镜（AEM）等手段，研究了薄膜的晶体结构、光学禁带宽度、表面和断面形貌与退火温度的变化关系。结果表明，低温段300℃以下退火的薄膜c轴较ZnO体材料有拉长现象；高温度段500℃到600℃退火的薄膜的晶粒直径变化平稳，其中500℃退火时，c轴也有拉长的效应，且形成良好的c轴趋向柱状晶薄膜；2．50℃退火时薄膜的光学禁带宽度最大，薄膜表面均匀致密，晶粒充分团聚结晶。     

退火温度对TiO2薄膜结构和表面形貌的影响

研究了退火温度对中频交流反应磁控溅射技术制备的TiO2薄膜结构和表面形貌的影响。利用X射线衍射 仪和原子力显微镜，检测了TiO2薄膜的晶体结构和表面形貌。实验结果显示：沉积态TiO2薄膜为非晶态；低温（700℃以下）退火后，TiO2薄膜出现锐钛矿相，晶粒长大不明显；高温退火（900℃以上）后，薄膜转变为金红石相，晶粒由柱状转变为棱状，并迅速长大至微米量级。     

退火气氛对Al-F共掺杂ZnO透明导电薄膜性能的影响

通过溶胶．凝胶法，采用Al、F共掺杂的方法在4种不同的气氛下制备ZnO薄膜，研究了薄膜的晶体结构、表面形貌、电阻率和透光性随退火气氛的变化关系．制备的Al：F：ZnO薄膜是具有六角纤锌矿结构的多晶薄膜．4种退火气氛相比，在空气气氛下退火时，平均晶粒尺寸最大，为43．4nm，导电性能最好，电阻率可低达6．5×10^-2Ω·cm。4种退火气氛下，薄膜在可见光范围内的平均透过率均达到了75％以上，其中，空气气氛下退火时薄膜的透光性最好。     

真空退火对VOx薄膜相结构及表面形貌的影响

以V2O5粉末为原料,采用无机溶胶-凝胶法制备了V2O5凝胶膜,经过真空退火处理得到了以VO2为主的薄膜。利用X射线衍射(XRD)和原子力显微镜(AFM)对不同实验条件下得到的薄膜的物相和表面形貌进行分析,得出了VOx薄膜相结构及表面形貌与真空退火条件之间的关系。     

磁控共溅射Al-Cu-Fe薄膜表面形貌分析

利用磁控共溅射方法采用不同的溅射工艺在单晶硅基片沉积制备了Al-Cu-Fe薄膜.运用原子力显微镜镜(AFM)分析了Al-Cu-Fe薄膜的表面形貌、表面粗糙度和晶粒尺寸.结果表明:随着溅射气压的减小,薄膜表面粗糙度和晶粒尺寸均有所减小.当基底温度升高至450℃时,Al-Cu-Fe薄膜的粗糙度和晶粒尺寸明显增加.溅射时间的延长导致了薄膜的表面粗糙度下降和晶粒尺寸的长大.增加溅射功率会使薄膜表面粗糙度有所增加.     

磁控共溅射Al-Cu-Fe薄膜表面形貌分析EI

利用磁控共溅射方法采用不同的溅射工艺在单晶硅基片沉积制备了Al-Cu-Fe薄膜.运用原子力显微镜镜(AFM)分析了Al-Cu-Fe薄膜的表面形貌、表面粗糙度和晶粒尺寸.结果表明:随着溅射气压的减小,薄膜表面粗糙度和晶粒尺寸均有所减小.当基底温度升高至450℃时,Al-Cu-Fe薄膜的粗糙度和晶粒尺寸明显增加.溅射时间的延长导致了薄膜的表面粗糙度下降和晶粒尺寸的长大.增加溅射功率会使薄膜表面粗糙度有所增加.     

退火对低温射频磁控溅射Ba铁氧体薄膜结构及磁特性的影响

用ＲＦ磁控溅射法，在纯Ａｒ气中，硅基片不加热的情况下，制备了Ｂａ铁氧化薄膜，研究了退火温度对薄膜Ｃ轴垂直取向、结构及磁特性的影响，结果表明薄膜在７００℃氧气中退火可获得良好Ｃ轴垂直膜同的择优取向，该薄膜的饱和磁化强度和矫顽力分别为Ｍｓ＝２９６ｅｍｕ／ｃｍ＾３，Ｈｃ＝３０８７６１Ａ／ｍ。退火温度过低或过高，都不利于形成Ｃ轴垂直膜面的择优取向。     

退火温度对NiZn铁氧体薄膜性能的影响

采用射频磁控溅射法在Si(100)基片上制备了NiZn铁氧体薄膜,研究了退火温度对薄膜性能的影响.采用XRD分析仪分析了薄膜的相结构,原子力显微镜分析了薄膜的表面形貌,振动样品磁强计测量了薄膜的磁性能,结果表明,随着退火温度的升高,薄膜的结晶状态越好,晶粒尺寸越大,饱和磁感应强度越高,面内矫顽力越小.     

磁控溅射法制备掺杂ZnO透明导电薄膜及其研究进展

磁控溅射技术以其显著的优点已成为工业镀膜主要技术之一。充分发挥磁控溅射镀膜技术的现有优势,寻找新的增长点,成为近年来人们研究的热点。介绍了磁控溅射镀膜技术的原理、特点;总结了近来磁控溅射法制备掺杂ZnO薄膜,主要是Al掺杂、Si掺杂、Al-H共掺杂ZnO薄膜的研究进展。并在此基础上对掺杂ZnO透明导电薄膜的发展趋势进行了展望。     

退火对低温射频磁控溅射Ba铁氧体薄膜结构及磁特性的影响

用RF磁控溅射法，在纯Ar气中，硅基片不加热的情况下，制备了Ba铁氧体薄膜，研究了退火温度对薄膜c轴垂直取向、结构及磁特性的影响，结果表明薄膜在700℃氧气中退火可获得良好c轴垂直膜面的择优取向，该薄膜的饱和磁化强度和矫顽力分别为Ms=296emu／cm3，Hc=308761A／m。退火温度过低或过高，都不利于形成c轴垂直膜面的择优取向。     

退火温度对TiO2薄膜结构与光学性能的影响

研究退火温度对薄膜相结构、表面化学组成、形貌及光学性能的影响.采用射频磁控溅射法在单晶硅片和石英玻璃片上负载TiO2薄膜,通过X射线衍射(XRD)、原子力显微镜(AFM)、X光电子能谱(XPS)和紫外可见光谱(UV-vis)对其进行表征.结果表明,常温制备400℃以下退火的TiO2薄膜为无定形结构,400℃以上退火的TiO2薄膜出现锐钛矿相,600℃以上退火的TiO2薄膜开始出现金红石相,退火温度在1000℃以上时样品已经完全转变为金红石相;高温退火薄膜的组成为TiOx;随着退火温度的升高,薄膜透射率下降,折射率和消光系数有所增加.     

溅射工艺对GdTbFeCo薄膜磁光性能的影响

采用射频磁控溅射法在玻璃基片上成功制得了GdTbFeCo非晶垂直磁化膜,研究了溅射工艺对GdTbFeCo薄膜磁光性能的影响.测量结果表明,基片与靶间距为72mm,溅射功率为75W,溅射气压为0.5Pa,薄膜厚度为120nm时,GdTbFeCo薄膜垂直方向矫顽力为477.6kA/m,克尔角为0.413°.     

Effect of deposition geometry on structural, electrical and optical properties of ZnO:Al films by magnetron sputtering

Al-doped ZnO films were prepared by the dc magnetron sputtering technique on Suprasil-1 substrates at a temperature of 470 K. Plasma-emission monitoring was used to stabilize oxygen flow to the deposition chamber. The effect of substrate position during deposition on the structural, electrical and optical properties of the films was investigated. It was found that preparation of low-resistance films with high optical transmission over the visible region is possible under condition of low plasma effects on the growing film.     

Electrical properties of Ta2O5 films deposited on ZnO

High dielectric constant (high-k) Ta₂O₅films have been deposited on ZnO/p-Si substrate by microwave plasma at 150°C. Structure and composition of the ZnO/p-Si films have been investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) for chemical composition. The electrical properties of the Ta₂O₅/ZnO/p-Si metal insulator semiconductor (MIS) structures were studied using high frequency capacitance-voltage (C-V), conductance-voltage (G-V) and current-voltage (I-V) characteristics. Charged trapping properties have been studied by measuring the gate voltage shift due to trapped charge generation under Fowler-Nordheim (F-N) constant current stressing.     

退火处理对TiO2薄膜结构和透射的影响

在常温下,采用射频反应磁控溅射方法在不同溅射功率下于K9双面抛光玻璃基底上制备二氧化钛薄膜.将制备的样品进行450℃退火6h热处理.利用X射线衍射仪(XRD)对比分析了退火前后薄膜的微观结构,采用光栅光谱仪测试了退火前后薄膜样品的透射谱.实验结果表明,退火前薄膜样品是非晶态,退火后薄膜晶化为晶态,但不同溅射功率下制备的薄膜结晶取向有差异;退火热处理对薄膜的折射率有一定影响,表现为退火前后透射谱偏移.     

Influence of annealing temperature on the properties of ZnO:Zr films deposited by direct current magnetron sputtering

Transparent conducting zirconium-doped zinc oxide (ZnO:Zr) films were deposited on quartz substrates by direct current (DC) magnetron sputtering at room temperature. The influence of post-annealing temperature on the structural, morphological, electrical and optical properties of ZnO:Zr films were investigated. When annealing temperature increases from room temperature to 573 K, the resistivity decreases obviously due to an improvement of the crystallinity. However, with further increase in annealing temperature, the crystallinity deteriorates leading to an increase in resistivity. The films annealed at the optimum annealing temperature of 573 K in vacuum have the lowest resistivity of 9.8 × 10⁻⁴ Ω cm and a high transmittance of above 92% in the visible range.     

退火温度对硅基溅射银膜微结构和应力的影响

用直流溅射法在硅(111)基底上制备银膜,膜厚为380nm。用BGS6341型电子薄膜应力分布测试仪对膜应力随退火温度的变化进行了研究,结果表明：膜应力随着退火温度的升高而增大,在400℃退火温度下膜应力变化明显。用MXP18AHF型X射线衍射仪测量了膜的衍射谱,对膜微结构随退火温度的变化进行了讨论。制备的Ag膜仍为面心立方结构,呈多晶状态,平均晶粒尺寸为23．63nm,薄膜晶格常数(0．40805nm)比标准样品晶格常数(0．40862nm)稍小。     

Structural, optical, and electrical properties of AZO films by tilted angle sputtering method

We investigate the structural, optical, and electrical properties of aluminum-doped zinc oxide (AZO) films on Si substrate by a tilted angle sputtering method. The substrate holder is tilted by varying the angle from θ_sh = 0° to θ_sh = 80° during the sputtering process. As the tilted angle is increased, the deposition rate is increased due to the decreased distance between the substrate and the target. Without substrate rotation, the deposited AZO films exhibit apparently the inclined nanocolumnar structures, depending on the tilted angle. The refractive index, which is related to the porosity within films, is reduced for the larger inclined nanocolumnar structure while the extinction coefficient remains almost the same in the visible wavelength range. The inclination of nanocolumns disappears when the substrate is rotated. On glass substrate, the electrical properties as well as optical transmittance of AZO films are also dependant on the tilted angle.     

不同退火工艺对AZO膜性能的影响

掺铝氧化锌(AZO)薄膜由于其独特的光学和电学性能而倍受人们的青睐。本文采用射频磁控溅射技术,制备了综合性能优良的AZO薄膜,通过不同退火工艺处理,研究了其对AZO薄膜的组织结构、电学性能及光学性能的影响。氮气环境下的退火使得AZO膜出现了更为明显的蓝移现象,氢气环境下的退火提高了薄膜的导电性。     

SrBi2Ta2O9铁电薄膜的三阶非线性光学性能的研究

采用射频磁控溅射法在石英玻璃衬底上制备出均匀透明的SrBi2Ta2O9(SBT)薄膜,根据透射谱计算表明薄膜样品厚度为349nm,线性折射率为3.05.以锁模Nd:YAG激光器作为光源,利用Z-scan技术测定了薄膜的非线性光学性能.结果表明薄膜的非线性折射率n2＝2.56×10-8esu,非线性光吸收系数β＝3.93×10-4 esu,其三阶非线性极化率的实部和虚部分别为:Reχ(3)＝8.29×10-9 esu和Imχ(3)＝1.08×10-9 esu.