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1.
We design and fabricate a V-shaped metal–oxide–semiconductor (MOS) transistor probe with the focused-ion-beam (FIB) nano tip to measure surface electric properties. The V-shaped structure is selected for its better lateral stiffness, and the specific dimensions are determined using the parallel beam approximation (PBA). The deposition conditions for the nano tip are also investigated for better tip sharpness. The high working frequency of the MOS transistor improves the scanning speed and the high sensitivity reduces the additional equipment required. The detection properties of the device are investigated with PZT poling patterns. The measured results show well-defined patterns, promising that the device can detect surface electric properties with high sensitivity and high working frequency.  相似文献   

2.
针对传统的金属管材分离技术存在生产效率低、能耗高以及浪费原材料等问题,采用了一种新的管材分离方法,利用偏心加载工艺和应力集中效应促使管材表面环状V形槽底尖端处快速萌生疲劳裂纹并控制疲劳裂纹的稳定扩展。描述了管材的偏心循环加载疲劳断裂分离装置的工作原理,推导出了疲劳加载下管材V形槽根部裂纹是否起裂的判断公式。设计了线性递减、多层阶梯递减、1/4凸弧递减和1/4凹弧递减四种实验控制曲线,针对304不锈钢管材进行实验研究,实现了管材的精密分离。实验结果表明,利用V形槽的应力集中效应,在偏心加载力的持续作用下,加载频率采用多层阶梯递减控制曲线由高到低地逐渐降低加载频率,能够保证管材V形槽根部裂纹的快速萌生和稳定扩展,并可实现管材快速断裂,获得良好的断面质量。  相似文献   

3.
Scanning probe imaging in a shear force mode allows for the characterization of in-plane surface properties. In a standard AFM, shear force imaging can be realized by the torsional resonance mode. In order to investigate the imaging conditions on mineral surfaces, a torsional resonance mode atomic force microscope was operated in amplitude (AM) and frequency modulation (FM) feedback. Freshly cleaved chlorite was investigated, which showed brucite-like and talc-like surface areas. In constant amplitude FM mode, a slight variation in energy dissipation was observed between both surfaces. Amplitude and frequency vs. distance curves revealed that the tip was in repulsive contact with the specimen during imaging.  相似文献   

4.
Crystallographic properties of silicide mediated crystallization (SMC) polycrystalline silicon (poly Si) and excimer laser annealing (ELA) poly Si were studied by electron backscattered diffraction. Large‐grain sized poly Si with a large fraction of low‐angle grain boundaries was acquired by SMC, and small‐grain sized poly Si with high‐angle grain boundaries especially around 60° was acquired by ELA. The thin film transistor (TFT) device characteristics were investigated in view of short‐range crystallinity (pattern quality) and long‐range crystallinity (misorientation distribution) of the specimens. Short‐range crystallinity did not significantly affect the TFT device characteristics, and long‐range crystallinity considering the low energy level of special boundaries could be better related to the TFT device characteristics of poly Si.  相似文献   

5.
We show experimentally that local optical field enhancement can occur at the end of an apertureless SNOM tip illuminated by an external light source. Our approach consists in the use of a photosensitive polymer, placed in the tip near‐field, to record intensity distribution in the vicinity of the tip end. The excited nanometre‐size light source permits us to produce nano‐patterns on the polymer surface which are then characterized by atomic force microscopy. Experimental images show the influence, on the field enhancement, of three important experimental parameters: the polarization state of the incident light, the geometry of the external illumination and the radius of curvature of the tip apex. These results are shown to be in good agreement with two‐dimensional numerical calculations based on the finite‐difference time‐domain method. We show preliminary nanometre‐size patterns created by this nano‐source excited at a metallic tip extremity and discuss the potential of this approach for near‐field optical lithography.  相似文献   

6.
Characterization of novel nanoelectronic structures and materials requires advanced and high-resolution diagnostic methods. In this article new approach for high sensitivity measurements of electric surface properties using scanning probe microscopy is presented. In this procedure topography and tunneling current flowing between the metallic tip and the surface are observed simultaneously. In our design piezoelectric tuning fork equipped with metallic tip in shear force microscope is used.  相似文献   

7.
通过对V形切口复合材料试件单向拉伸、分级加卸载拉伸试验及声发射实时监测,研究含切口缺陷复合材料拉伸损伤破坏及其声发射响应特征.结果表明:复合材料切口试件拉伸损伤破坏与声发射特征参量相关;切口尖端的高应力状态导致该区域过早损伤破坏并扩展,且对应较高的声发射相对能量、幅度和急剧增加的撞击数;声发射定位源主要集中在位于试件中部的切口尖端及其扩展区域.  相似文献   

8.
For carrying out the precise cropping of metal bar with different geometrical sizes, it is very important to obtain the reasonable stress intensity factor of V-shaped notch tip rapidly and accurately. At first, a new precise cropping method, which is the high-speed peripheral low-stress bending fracture cropping is presented in the paper, and its working mechanism is also given in detail. The stress field near V-shaped notch tip is analyzed, and the stress extrapolation method is presented to compute the stress intensity factor of V-shaped notch tip. Based on it, the correctional expression of theoretical stress intensity factor in a handbook of stress intensity factor is also given. The contrasts between stress intensity factor results obtained by means of the stress extrapolation method and the corresponding theoretical results in the handbook of stress intensity factor are also carried out in detail. The results show that the two errors are not more than 5 % and are within a reasonable engineering range. The cropping experimental results for initial loading force and crack propagation life have also confirmed that the correctional expression of theoretical stress intensity factor is feasible.  相似文献   

9.
谢晋  韦凤  田牧纯一 《光学精密工程》2009,17(11):2771-2778
针对微纳米级功能V槽微细加工及评价困难的问题,采用单点金刚石切削方法在超精密机床上对光学玻璃进行V槽的微纳尺度加工,且利用非接触激光检测技术展现V槽的加工形貌。研究目的是分析V槽的微纳米尺度加工的可行性以及找出如何评价V槽加工精度的方法。首先,采用单点金刚石在光学玻璃上进行V槽的微纳尺度切削试验。然后,利用3D激光超精密检测仪器检测加工的V切痕,构建微V槽切痕的形貌图,建立V槽形状误差PV值和V槽尖角圆弧半径的评价模式。最后,分析在微纳尺度加工中切除深度与V槽角度的形成机理以及切削深度对V槽形状误差及其尖角圆弧半径的作用机制。结果表明,在亚微米级尺度加工中存在一个脆/塑性域切除加工状态转变的临界切削深度。在塑性域切削中,金刚石刀具尖角形状可以复制到工件表面,形成深度小于0.386μm、形状误差PV值约0.103μm、尖角半径约为0.182μm的V槽。此外,V槽形状误差PV值在塑性域切除加工中始终保持不变,但在脆性域切除加工中随着切削深度增大而逐渐剧烈加大。而且,V槽尖角圆弧半径在塑性域切削中随着切削深度减小而减小,但为了获得完整的V槽轮廓还需被控制在V槽成型临界界线以下。因此,在处理非接触激光检测的3D数据的基础上,V槽形状误差PV值和尖角圆弧半径可以用来评价V槽微纳尺寸加工的加工精度和微细程度。  相似文献   

10.
A Stemmer  A Engel 《Ultramicroscopy》1990,34(3):129-140
Methods are discussed which permit the calibration of x-, y-, z-sensitivities, non-linearities and frequency responses of the scanning device of a scanning tunneling microscope (STM) either by interferometry or directly from STM topographs. A technique is presented to measure the frequency response of the complete STM feedback unit and to derive a maximum speed in z direction which allows one to estimate the maximum scanning speed still permitting one to track surface corrugations. The signal transfer characteristics of a STM are evaluated in a direct comparison with high resolution transmission electron microscopy on an identical specimen area. The various effects of contaminants between tip and specimen and the finite tip radius receive special attention.  相似文献   

11.
有机电致发光薄膜器件的研究   总被引:1,自引:1,他引:0  
有机电致发光薄膜具有制备方便,驱动电压低,发光亮度高,可以与聚合物基底匹配等优点,成为目前世界显示技术的一大研究热点。论述了有机发光薄膜器件的结构、工作机理及其薄膜电致,光致发光的特性,论述了薄膜发光器件的电学特性与光学特性及其器件在脉冲电压波形驱动下的电光特性,提出了应用于显示技术的有机电致发光薄膜器件的电学于光学特性的优化方法。  相似文献   

12.
Hata K  Takakura A  Saito Y 《Ultramicroscopy》2003,95(1-4):107-112
Adsorption and desorption on clean pentagons at a tip of multiwall carbon nanotube (MWNT) have been investigated by field emission microscopy (FEM) in an atmosphere of various gases, i.e., hydrogen, carbon monoxide, nitrogen and oxygen. A MWNT with clean surface which is obtained by heat treatment gives FEM patterns consisting of six bright pentagonal rings. Adsorbates are recognized as bright spots in the FEM pattern. They reside preferentially on the pentagonal sites where the strong electric field is concentrated, and bring about stepwise increase in the emission current. Heat treatment of the MWNT emitter at about 1300K allows adsorbates to desorb. After the desorption of hydrogen and nitrogen, the original clean surface with pentagons is recovered, while the tip structure is destroyed after the desorption of oxygen.  相似文献   

13.
申光宪  王凤琴  肖宏 《机械强度》2001,23(2):219-221,231
给出金属板在高密度电流脉冲下裂纹尖端电流肤效应和急剧发热升温解析的边界元法,本法在时频转换,差分格式和时变基本解等三种解法中采用时变基本解建立边界积分方程。文中列举钢板裂纹尖端电流密度和温度场算例,并与试验结果和温度场函数解分布曲线作了对比,吻合较好,本文为开发金属结构,轧辊及铸管模等电磁热止裂及延寿工艺技术提供高精度快速定量数值解法。  相似文献   

14.
This paper proposes a new vibration cutting method named “multimode vibration cutting” for precision surface texturing. The proposed cutting method utilizes multiple unidirectional vibration modes mainly in the depth-of-cut direction. The vibrations at multiple frequencies induced to the tool tip can generate not only sinusoidal but also highly-flexible trajectories such as trapezoidal, triangular, and distorted triangular waves. Notably, only a sinusoidal vibration can be induced when a single resonant vibration is applied to the tool tip. Compared to conventional highly-flexible cutting methods for surface texturing, such as the utilization of fast tool servo and amplitude control of ultrasonic elliptical vibration cutting, the proposed method is highly-efficient because of its direct usage of high resonant frequencies. Compared to conventional highly-efficient cutting methods for surface texturing, such as linear and elliptical vibration cutting which mainly utilizes the vibration component in the depth-of-cut direction, the proposed method can generate highly-flexible trajectories for various micro texture profiles. In this study, an ultrasonic multimode vibration device is developed, and the mechanics of generating multimode vibrations are demonstrated. Turning experiments with several texture profiles are performed to confirm the validity of the proposed method for highly-efficient and highly-flexible micro/nano surface texturing.  相似文献   

15.
An ultrahigh vacuum ion beamline and chamber have been assembled to produce hyperthermal (<400 eV) energy ions for studying hot electron chemistry at surfaces. The specific design requirements for this modified instrument were chosen to enable the exposure of a metal-oxide-semiconductor (MOS) device to monoenergtic, well-collimated beams of alkali ions while monitoring both the scattered beam flux and the device characteristics. Our goal is to explore the role that hot electrons injected toward the MOS device surface play in the neutralization of scattered ions. To illustrate the functionality of our system, we present energy-resolved spectra for Na+, K+, and Cs+ ions scattered from the surface of a Ag(001) single crystal for a range of incident energies. In addition, we show MOS device current-voltage characteristics measured in situ in a new rapid-turnaround load lock and sample translation stage.  相似文献   

16.
AFM-based wear process actually is single abrasive abrasion process. It is widely employed in the surface micro/nano machining for fabrication of structures at the nanometer scale exhibiting high removing ability of nanometer scale materials. In this study, application of AFM-based single abrasive abrasion process in the local surface quality (surface roughness) improvement was studied. Merged holes were fabricated using an AFM diamond tip with different wear parameters on the surface of germanium (Ge) machined by conventional ultra-precision diamond turning. Results showed that cracks left by diamond turning can be removed and the local surface quality can be improved. Also effects of the wear parameters on the surface roughness were investigated. The optimized parameters of the abrasion process for improving the surface quality were provided. It is verified that AFM-based single abrasive abrasion process is a novel approach to modify or repair local surface on the surface of parts manufactured by other methods.  相似文献   

17.
压印光刻工艺中光刻胶填充流变模拟与试验研究   总被引:1,自引:1,他引:0  
压印光刻工艺中,为了实现高质量的压印复型,必须能够理解和预测压印载荷作用下光刻胶的流变填充行为。根据实际采用的光刻胶的特性,建立了基于粘性流体的光刻胶流变填充有限元模型,采用体积率法对光刻胶流场的运动边界进行追踪,研究模板特征几何尺寸、胶层厚度及及尺度效应对压印填充过程的影响及其作用机理。结果表明,光刻胶流变填充以单峰或双峰两种模式进行,模式的转变点可由特征凹槽宽度和初始胶厚度的比值来预测,并受表界面效应的影响;最有利于填充的特征深宽比约为0.8;最佳初始胶层厚度约为特征深度的2倍。进行了相应的压印试验,试验结果与模拟计算的结论吻合,说明仿真结果可信,可以作为压印光刻工艺中模板图形几何特征、胶厚以及模板表面处理的工艺设计依据。  相似文献   

18.
快走丝电火花线切割机床切割铝件时出现导电块磨损严重、电极丝与导电块之间有电火花产生、断丝现象频繁等不良现象,严重影响了铝件的表面加工质量和加工效率。首先分析了线切割机床切割铝件时产生上述不良现象的原因;然后通过改变原有的导电块导入脉冲电源负极的方式,采用储丝筒导入脉冲电源负极的方式,并设计了专用的脉冲电源负极导入装置,确保电极丝与电源的可靠接触;最后通过实验验证了设计方案的可靠性和正确性,为铝件的切割加工提供了技术支持。  相似文献   

19.
Nanobundles patterns can be formed on the surface of most thermoplastic polymers when the atomic force microscope (AFM)‐based nanomechanical machining method is employed to scratch their surfaces. Such patterns are reviewed as three‐dimensional sine‐wave structures. In the present study, the single‐line scratch test is used firstly to study different removal states of the polystyrene (PS) polymer with different molecular weights (MWs). Effects of the scratching direction and the scratching velocity on deformation of the PS film and the state of the removed materials are also investigated. Single‐wear box test is then employed to study the possibility of forming bundle structures on PS films with different MWs. The experimental results show that the state between the tip and the sample plays a key role in the nano machining process. If the contact radius between the AFM tip and the polymer surface is larger than the chain end‐to‐end distance, it is designated as the “cutting” state that means the area of both side ridges is less than the area of the groove and materials are removed. If the contact radius is less than the chain end‐to‐end distance, it is designated as the “plowing” state that means the area of both side ridges is larger than the area of the groove and no materials are removed at all. For the perfect bundles formation on the PS film, the plowing state is ideal condition for the larger MW polymers because of the chains’ entanglement. SCANNING 35:308‐315, 2013. © 2012 Wiley Periodicals, Inc.  相似文献   

20.
Kim T  Kim S  Olson E  Zuo JM 《Ultramicroscopy》2008,108(7):613-618
We present the design and operation of a transmission electron microscopy (TEM)-compatible carbon nanotube (CNT) field-effect transistor (FET). The device is configured with microfabricated slits, which allows direct observation of CNTs in a FET using TEM and measurement of electrical transport while inside the TEM. As demonstrations of the device architecture, two examples are presented. The first example is an in situ electrical transport measurement of a bundle of carbon nanotubes. The second example is a study of electron beam radiation effect on CNT bundles using a 200 keV electron beam. In situ electrical transport measurement during the beam irradiation shows a signature of wall- or tube-breakdown. Stepwise current drops were observed when a high intensity electron beam was used to cut individual CNT bundles in a device with multiple bundles.  相似文献   

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