EME—5900塑封树脂国产化应用

一、概述绝缘型封装（又称全包封封装）是塑封大功率管的发展方向，其突出的特点：是绝缘性、气密性好，用户使用方便。但是，由于绝缘型封装的特殊封装结构，对塑封树脂提出了很高的特殊要求，即在综合物理化学性能保持不变的情况下，导热系数要求超过45Xic‘caf／s·Cm屹，比     

基于光电耦合的耐压绝缘测试系统设计

应用集成光电耦合器TLP521-4,设计了一种基于光电耦合的耐压绝缘测试系统,详细说明了光电耦合隔离的耐压绝缘测试系统的设计思路和硬件电路结构.这种基于光电耦合的耐压绝缘测试系统具有抗电磁干扰强、成本低廉的优点,能极大提高测试系统的工作稳定性.     

基于掉电数据存储的耐压绝缘测试系统设计

应用非易失性存储芯片24C16与单片机相连接,设计了一种基于掉电数据存储的耐压绝缘测试系统,详细说明了掉电数据存储的耐压绝缘测试系统的设计思路和硬件电路结构,编写了相应的读写程序.这种串行非易失性存储技术具有高速读写、百万次擦写寿命和数据保存时间长的优点,能极大提高系统的适用范围和系统的测试效率.     

塑封IC失效分析及对策

阐述了塑封IC(集成电路)常见的失效现象,对塑封IC失效的几种分析方法和分析技术做了叙述,然后提出塑封IC失效分析的步骤,并从设计、工艺和材料控制、包装、运输等方面提出改善塑封IC可靠性的措施。     

电子信息

△耐压测试仪制成投产 南京长江无线电厂制成耐压测试仪并已大批投产上市,该仪器由电源、电压调节、报警、控制、电流输出等部分组成,是测量高压交流电、直流电和绝缘电阻的精密仪器,可测量交流电和直流电的耐压5千伏,为指针显示,主要技术指标达到日本同类产品水平,能测量电视机、电风扇、收录机、电冰箱、洗衣机等家用电器的耐压值,绝缘性能,还能测量电工器材。电子仪器仪表、电子元器件的耐压和绝缘电阻数值,该仪器体积小,重量轻,用自行车可携带,在家用电器、电机生产、维修部门,工矿企业以及胶木电器     

塑封器件的耐湿性问题

目前国外集成电路(IC)封装的主流是塑料封装,而且最常用的是环氧树脂低压递模法(transfer molding)的树脂封装.IC80%,分立器件90%以上,民用器件几乎100%采用塑料封装.其中环氧塑封占90%,硅酮塑封已退居次要地位.这种变化是由于管芯制造技术(钝化技术等)的进步和塑封材料可靠性的提高,日益扩大了塑封的适用范围.国外64KDRAM原来完全采用陶瓷封     

航天高电压设备的绝缘防护研究

通过对航天电子产品特殊的工作环境分析,针对低真空环境下的低气压放电问题,阐述了航天高电压设备对绝缘的特殊要求。在低气压条件下通过设计足够的间隙,减小电场强度分布,合理的排气通道避免低气压放电现象的发生。同时在绝缘防护工艺上采取绝缘涂覆或者灌封(或局部灌封)工艺,将气体绝缘转换为固体绝缘,可以有效提高产品的绝缘能力。     

提高剥容的金属化聚碳酸酯薄膜电容器的绝缘合格率

本文通过对剥容的金属化聚碳酸酯薄膜电容器的半成品和成品后绝缘性能的不良品进行再一次赋能，成功地提高了剥容产品的绝缘性能和耐压试验后绝缘性能的稳定性，从而使得产品的绝缘合格率有了明显的提高。     

TO－220FS封装工艺改进研究

文章通过分析对比TO-220FS4封装产品内部与传统全包封产品内部结构的差异性，来展现产品的生产、工艺流程中的各技术难点。然后通过对各技术难点进行成因分析并采取相对应的解决方案，使技术难关得到顺利攻克。该过程所攻克的技术要点包括工艺条件、工艺技术、设备改造，解决了粘晶过程的锡层控制、焊线过程消除应力作用、塑封针孔、去料道、剪切拉筋、绝缘测试等问题，顺利地实现了批量生产，装配后产品技术指示能满足市场要求，产品质量稳定。     

铜丝键合塑封器件开封方法的改进研究

通过分析塑封器件的开封过程中使用传统的化学开封方法的关键过程和制约因素,并进行了相应的改进,设计出一种将激光烧蚀和化学腐蚀相结合的铜丝键合塑封器件的开封方法;通过在不同的开封温度和浓酸配比条件下进行效果对比,总结出该方法开封铜丝器件的关键因素和推荐参数,对开封铜丝键合器件具有一定的指导作用。     

Design considerations for linear optically coupled isolation amplifiers

A hybrid optically coupled isolation amplifier is described which optimizes DC performance, bandwidth, physical size, and cost. The design utilizes a blend of monolithic and hybrid technologies to achieve this unique set of characteristics. The development of the linear optical coupler is traced. Optical and electronic circuit techniques are presented that combine, for the first time, precision performance with miniature packaging. Optional connections allow unipolar/bipolar and inverting/noninverting operation with both voltage and current inputs. Typical performance, based upon production runs, includes: 1000 V isolation voltage, 10 nA offset current, 1 pA//spl deg/C offset drift, 0.3 /spl mu/A barrier leakage at 60 Hz, 0.05 percent nonlinearity, and a bandwidth of over 60 kHz.     

Design strategy of localized halo profile for achieving sub-50 nm bulk MOSFET

This paper presents a design strategy to optimize short-channel effects with localized halo profile for achieving sub-50 nm bulk MOSFET devices. With the optimal choice of the location of heavily doped halo, it can be simultaneously accomplished to improve the roll-off of threshold voltage and to relieve drain leakage current without raising the low threshold voltage. To reduce the impact of heavy halo doping concentration on the threshold voltage, it is essential to have a deep and short enough halo doping profile. The halo-to-extension spacing is the most effective design parameter to control the band-to-band leakage current and the threshold-voltage roll-off. With adequate halo-to-extension spacing, a much heavier halo doping concentration can be used to suppress the roll-off of threshold voltage without raising the drain leakage current. The sidewall oxide of the insulated shallow extension structure demonstrates the feasibility of the precise control of the halo-to-extension spacing to achieve a sub-50 nm bulk MOSFET with fully CMOS compatible process.     

美国高温微系统封装技术现状

到内太阳系执行各种空间探索研究任务离不开高性能的高温传感器与电子元器件;此外,宇航发动机环境也急需耐高温的燃烧/发射控制传感器与电子部件.在高温微器件与系统的开发中,封装技术至关重要.美国在该领域的研究一直处于世界领先水平.介绍了美国高温微系统封装技术的发展现状;以美国宇航局Glenn研究中心等研究机构的研发成果为重点,论述空间与航空应用领域急需的500℃以上高温恶劣环境工作的MEMS传感器封装技术,并从材料要求、技术水平和应用领域等方面展望了高温微器件封装技术的未来发展趋势.     

The optimization of deep trench isolation structure for high voltage devices on SOI substrate

In this paper, the process and layout optimizations for improving the isolation performance of deep trench structures on SOI substrate are proposed. In the view of process flow, the reasons for forming weak points (located at the trench bottom) in deep trench structure are analyzed. In order to solve this problem of the weak points, a method of etching partial buried oxide after etching silicon is put forward, which can increase the thickness of isolation oxide at trench bottom by 10-20%. In aspect of layout structure, a voltage drop model of double trench structures is presented and verified by the experimental results, which indicates that breakdown voltage of double trench is a function of trench spacing. It is noted that the minimum trench spacing allowed by the process design rule can ensure superior isolation capability for double trench structure. Both methods for improving the performance of the device have also been verified in 0.5 μm HV SOI technology.     

微系统与中规模器件的封装技术设计

文章主要论述了微机电系统(MEMS)和微系统诸如微传感器、驱动器和微流体元件的电机封装技术、封装等级和封装技术相关的问题.首先陈述并讨论了典型的MEMS产品诸如微压传感器、加速度计和微泵;微电子封装和微系统封装技术,重点阐述芯片级封装技术和器件级封装技术问题.芯片级封装技术主要涉及芯片钝化、芯片隔离和芯片压焊;器件级封...     

一种低噪高输出电压DC—DC变换器设计

针对某航天器设备用的130V高压DC—DC变换器的低噪声要求,采用初级侧隔离的负载端直接反馈控制方式,次级侧采用结合LC低通无源滤波电路和有源滤波电路的两级输出滤波电路设计方法。通过实验,不仅实现了高压DC—DC变换器的低噪声输出,而且通过优化设计,使得两级滤波器的体积较小,可靠性较高,实现了星载应用。     

Implementation of a New Linear Control Technique Based on Experimentally Validated Small-Signal Model of Three-Phase Three-Level Boost-Type Vienna Rectifier

In this paper, the design and implementation of a new multiple-input-multiple-output linear control technique based on a theoretically established and experimentally validated small- signal model for the three-phase three-level boost-type ac/dc Vienna converter are presented. Averaging and local linearization techniques are used to derive the dynamic model expressed in the dqo reference frame. The resulted transfer functions are discretized for the sake of a digital controller design. Multiple-loop control strategy is adopted and consists of inner current feedback loops, which are based on the straightforward looping technique that neglects interactions between the dq components of control inputs and currents, respectively, and of an outer voltage loop, which is designed to ensure dc voltage regulation by adjusting the magnitude of the references for the inner current loops. The output dc voltage unbalance is also controlled in the inner loops. The proposed modeling and control approaches are first simulated and then validated on a 1.5-kW laboratory prototype supported by the DS 1104 digital real-time controller board of dSPACE. The obtained results prove the accuracy of the proposed new small-signal model and, therefore, its reliability for dynamic analysis and control design purposes. It is also proved that a judicious choice of controller parameters, as well as an adequate rating of boost inductors, allows one to meet the IEEE standard requirements in terms of ac line-current total harmonic distortion and power factor. The efficiency of the proposed control technique is maintained in case of disturbances occurring on both source and load sides.     

Development of a Scalable Power Semiconductor Switch (SPSS)

This paper presents the design and development of a 4800-V, 300-A, 10-kHz scalable power semiconductor switch (SPSS) based on series connecting low voltage insulated gate bipolar transistors (IGBTs). The static and dynamic voltage balance among IGBTs is achieved using a hybrid approach of active clamp circuit and an active gate control that is also effective during tail current phase. The developed SPSS derives its control power directly from the main power bus. Control, packaging, and thermal characteristics are an integral part of the SPSS design. From a user's standpoint, the SPSS is a three-terminal optically controlled high-power switch. Experimental evaluation of the prototype SPSS shows it fully achieved the design objectives. In principle, the approach can be extended to building switches with higher voltages, currents, and switching frequencies, or even with other types of devices than IGBTs     

基于DDS芯片AD9851的高压脉冲发生器设计

设计了一种基于DDS（直接数字频率合成）芯片AD9851的可调高压脉冲发生器，该发生器主要由脉冲形成控制部分、信号放大部分度隔离3部分组成。通过单片机、DDS芯片及控制电路可以产生脉宽可调的脉冲信号，通过电阻分压调节器、高压变压器等外围电路来实现幅度可调的高压脉冲，不仅提高了脉冲发生器工作的稳定性，而且能方便、实时地实现脉冲宽度与幅度的在线调节。     

Active input-voltage and load-current sharing in input-series and output-parallel connected modular DC-DC converters using dynamic input-voltage reference scheme

This paper explores a new configuration for modular DC/DC converters, namely, series connection at the input, and parallel connection at the output, such that the converters share the input voltage and load current equally. This is an important step toward realizing a truly modular power system architecture, where low-power, low-voltage, building block modules can be connected in any series/parallel combination at input or at output, to realize any given system specifications. A three-loop control scheme, consisting of a common output voltage loop, individual inner current loops, and individual input voltage loops, is proposed to achieve input voltage and load current sharing. The output voltage loop provides the basic reference for inner current loops, which is modified by the respective input voltage loops. The average of converter input voltages, which is dynamically varying, is chosen as the reference for input voltage loops. This choice of reference eliminates interaction among different control loops. The input-series and output-parallel (ISOP) configuration is analyzed using the incremental negative resistance model of DC/DC converters. Based on the analysis, design methods for input voltage controller are developed. Analysis and proposed design methods are verified through simulation, and experimentally, on an ISOP system consisting of two forward converters.