Novel quasi-solid electrolyte for dye-sensitized solar cells

A novel alkyloxy-imidazole polymer was prepared by in situ co-polymerization of alkyloxy-imidazole and diiodide to develop an ionic polymer gel electrolyte for quasi-solid dye-sensitized solar cells (DSCs). The DSCs with the polymer gel electrolyte of 1-methyl-3-propylimidazolium iodide (MPII) showed good photovoltaic performance including the short-circuit photocurrent density (J_sc) of 3.6 mA cm⁻², the open-circuit voltage (V_oc) of 714.8 mV, the fill factor (FF) of 0.60 and the light-to-electricity conversion efficiency (η) of 1.56% under AM 1.5 (100 mW cm⁻²). As a comparison, the DSCs with the polymer gel electrolyte of 1,2-dimethyl-3-propylimidazolium iodide (DMPII) yielded a light-to-electricity conversion efficiency of 1.33%. The results indicated that the as-prepared polymers were suitable for the solidification of liquid electrolytes in DSCs.     

Series-connected tandem dye-sensitized solar cell for improving efficiency to more than 10%

As one of the methods for improving the efficiency of a dye-sensitized solar cell (DSC), we investigated series-connected tandem DSCs. In this system, the top cell is made up of a transparent cell and the bottom cell utilizes only the light passing through the top cell. We investigated several combinations of dyes in tandem-type DSCs. The best efficiency obtained in our study is 10.4% (J_sc=10.8 mA/cm², V_oc=1.45 V, and FF=0.67) for a series-connected tandem DSC consisting of an N719 top cell and a black-dye bottom cell.     

Characterization of PIII textured industrial multicrystalline silicon solar cells

Optimized textured structure is one of the most important elements for high efficiency multicrystalline silicon solar cells. In this paper, in order to incorporate low reflectance nanostructures into conventional industrial solar cells, structures with aspect ratios of about 1:1 and average reflectance of 8.0% have been generated using plasma immersion ion implantation. A sheet resistance of 56.9 Ω/sq has been obtained by adjusting the phosphorous diffusion conditions, while the thickness of the silicon nitride vary in 70–80 nm by extending the deposition time by 100 s. Under the conventional co-firing conditions, a solar cell with efficiency of 16.3% and short-circuit current density 34.23 mA/cm² has been fabricated.     

Ebeam fabrication of silicon nanodome photovoltaic devices without metal catalyst contamination

In this paper, the fabrication of silicon nanodome solar cells on crystalline wafers is reported. Crystalline silicon was patterned by ebeam lithography to define the silicon nano pillars with diameter of 100 nm, 1 μm and 5 μm. Unlike conventional bottom up growth of silicon nanowire from gold (Au), our method is free from contaminant. Consequently, it is a valuable method to fully evaluate the effect of nanostructures on solar cell performances. The fabricated devices were characterized through scanning electron microscopy, absorption measurements, illuminated solar cell I–V characteristics and monochromatic incident photon-to-electron conversion efficiency.     

Twenty-two percent efficiency HIT solar cell

We have achieved the world's highest solar cell conversion efficiency of 22.3% (V_oc: 0.725 V, I_sc: 3.909 A, FF: 0.791, total area: 100.5 cm², confirmed by AIST) by using a heterojunction with intrinsic thin layer (HIT) structure. This is the world's first practical-size (>100 cm²) silicon solar cell that exceeds a conversion efficiency of 22% as a confirmed value. This high efficiency has been achieved mainly due to improvements in a-Si:H/c-Si hetero-interface properties and optical confinement.The excellent a-Si:H/c-Si hetero-interface of the HIT structure enables a high V_oc of over 0.720 V and results in better temperature properties. In order to reduce the power-generating cost, we are now investigating numerous technologies to further improve the conversion efficiency, especially the V_oc, of HIT solar cells, with the aim of achieving 23% efficiency in the laboratory by 2010.     

TiO2–Au plasmonic nanocomposite for enhanced dye-sensitized solar cell (DSSC) performance

Anatase TiO₂ nanoparticles dressed with gold nanoparticles were synthesized by hydrothermal process by using mixed precursor and controlled conditions. Diffused Reflectance Spectra (DRS) reveal that in addition to the expected TiO₂ interband absorption below 360 nm gold surface plasmon feature occurs near 564 nm. It is shown that the dye sensitized solar cells made using TiO₂–Au plasmonic nanocomposite yield superior performance with conversion efficiency (CE) of ～6% (no light harvesting), current density (J_SC) of ～13.2 mA/cm², open circuit voltage (V_oc) of ～0.74 V and fill factor (FF) 0.61; considerably better than that with only TiO₂ nanoparticles (CE ～ 5%, J_SC ～ 12.6 mA/cm², V_oc ～ 0.70 V, FF ～ 0.56).     

Novel approaches for tri-crystalline silicon surface texturing

Tri-crystalline silicon (Tri-Si) is a promising candidate to reduce the cost of solar cells fabrication because it can be made by a low-cost, fast process with a better mechanical strength, and needs a thinner wafer. One of the key parameters in improving the efficiency of the Tri-Si solar cells is the reflectance, which can be lowered by etching methods. However, Tri-Si is a crystal compound consisting of three mutually tilted monocrystalline silicon grains. In all grains boundaries the surface is (1 1 0)-oriented. A standard surface texture of etched random pyramids using an anisotropic etchant, such as NaOH, is not achievable here. In this paper, for the first time, a novel texturing method has been attempted, which consisted of two steps—HF:HNO₃:DI (2.5:2.5:5) etching was followed by exposure to the vapors to generate fine holes and an etching depth of 2.5 μm had been reached. A best result of 12.3% has been achieved for surface reflectance, which is about 10% lower than that using normal acidic texturing. Nanoporous structures were formed and the size of the porous structure varied from 5 to 10 nm. An antireflection coating of SiN_x SLAR was used to optimize the reflectance. A fill factor of 0.78 has been reached with an efficiency of 16.2% in 12.5 cm×12.5 cm. This high efficiency is mainly due to an increased short-circuit current density of 34 mA/cm².     

Light induced degradation in nanocrystalline Si films and related solar cells: Role of crystalline fraction

Silicon thin films with different crystalline volume fractions have been deposited at different power and pressure conditions. Structural properties of the films have been investigated. The effects of crystalline volume fractions and grain sizes on the degradation of photoconductivity have been studied. Single-junction solar cells have been fabricated with protocrystalline and nanocrystalline Si as absorber layer. Protocrystalline silicon solar cells show less than 1% degradation upto 50 h of light soaking. Then the cells degrade upto 500 h and thereafter become steady. Nanocrystalline solar cells show degradation initially and become steady after 10 h of light soaking. Using protocrystalline silicon as absorber layer the solar cell efficiency degrades 9% before stabilization, whereas using nanocrystalline silicon as absorber layer (X_c～65%) the solar cell efficiency degrades 2.9%. Stabilized efficiency of the second type of cell is better than that of the first cell, but initial efficiency is higher for the first cell (η=7.1%).     

Improving thin-film crystalline silicon solar cell efficiency with back surface field layer and blaze diffractive grating

Both 2D electromagnetic and electrical semiconductor simulations are performed sequentially in this study in order to better understand the structural principles of thin-film crystalline solar cells with back surface field and blaze diffractive grating. In the absence of adequate approximations for blazed gratings, we simulate silicon solar cells electromagnetically and electrically in order to deal with the geometrical complexity produced by the blazed grating with a BSF on top of it. Thin-film crystalline silicon solar cells (TF-c-Si SCs) typically exhibit poor quantum efficiency both at shorter wavelengths and longer wavelengths with sharp drops in spectral response. Longer wavelength spectral response (from 0.6 μm to 1.2 μm) is addressed here first by considering the influence of blaze gratings on the enhancement of effective optical absorption in thin-film crystalline silicon (TF-c-Si) solar cells. The effect of the back surface field layer (BSF) in terms of improving minority carrier collection is also taken into account. In the 2D electromagnetic simulation, polarization dependent two-dimensional (2D) numerical simulations based on rigorous coupled wave analysis (RCWA) and finite element method (FEM) are implemented for the optimization of optical absorption of the solar cell structure. A rather large tolerance in design parameters of the optimized blaze grating structure was found. The optimized blaze grating structures help in improving the cell efficiency, especially for weak absorption thin cell structures. The enhancement of equivalent optical path length reveals the efficient light trapping effect caused by the diffractions of the blaze grating structures, especially in the longer wavelength range. In the electrical semiconductor simulation, the BSF, which arises from the heavy acceptor doping that creates the concentration gradient, is set atop the blaze grating in order to provide an extra small drift field for the collection of minority electrons. Incorporating the optimized antireflection coating along with a BSF layer and a blaze-grating in the 2 μm cell doubles cell efficiency. The use of blazed gratings in thin-film solar cells, which can be performed upon silicon by means of lithography and ion-beam etching, is promising for low cost and high-efficient solar cell applications.     

Optimisation of NaOH texturisation process of silicon wafers for heterojunction solar-cells applications

The formation of a pyramidal structure on the surface of 〈1 0 0〉-oriented monocrystalline-silicon wafers is an effective and well known method to reduce reflection losses from the front surface of both silicon solar cells and silicon-heterojunction solar cells (SHJs). The consequence of this texturisation is an important optical gain, with a subsequent increase of the short-circuit current density (J_sc) and thus of the conversion efficiency of the devices. On the other hand, silicon-heterojunction solar cells are critically affected by the surface quality of the c-Si substrates, so the right combination of optimum texturisation- and cleaning steps previous to emitter (a-Si:H) deposition are indispensable in the fabrication process. The main goal of this work has been to perform a systematic and comprehensive analysis aimed at optimising the texturisation process based on the use of alkali solutions of NaOH with de-ionised water (DIW) and isopropyl alcohol (IPA) in different types of monocrystalline-silicon wafers for silicon-heterojunction solar-cell (a-Si:H/c-Si) applications. Three types of 〈1 0 0〉 silicon substrates have been used: polished float-zone (FZ) wafers and rough- (as-cut) and polished Czochralski (CZ) wafers. The texturisation process has been evaluated from images obtained by Scanning Electron Microscopy (SEM) and from hemispherical-reflectance spectra. Different etching times, temperatures and NaOH concentrations of the solutions as well as cleaning treatments of the wafers prior to the texturisation process have been analysed. Results show different conditions of the optimum texturisation process for each type of silicon wafers. An effective texturisation of FZ and CZ substrates has been achieved. Finally, SHJ solar cells have been obtained from FZ and CZ silicon wafers textured by the chemical processes optimised in this work.     

Band gap engineering of RF-sputtered CuInZnSe2 thin films for indium-reduced thin-film solar cell application

We demonstrated the preparation and characterization of radio frequency (RF)-sputtered CuInZnSe₂ thin films for indium-reduced thin-film solar cell application. Sputtering targets composed of high-purity CuSe, InSe and ZnSe powders were employed for preparing CuInZnSe₂ films with various band gaps. Under an optimum condition, an increase of zinc concentration in the film could reduce indium approximately to 45%. The structure of the films showed a chalcopyrite phase with a predominant (1 1 2) reflection. The p-type CuInZnSe₂ films exhibited a shift of optical transmittance to a lower wavelength and the band gap could be engineered from 1.0 to 1.25 eV in proportion with increasing zinc concentration.     

Internal quantum efficiency improvement of polysilicon solar cells with porous silicon emitter

The present study aimed to develop a simple analytical model to investigate the potential use and implications of porous silicon (PS) as an antireflective coating in thin polysilicon solar cells. It analytically solved the complete set of equations necessary to determine the contribution that this material has on the internal quantum efficiency (IQE) of the cell when acting as an antireflective coating agent. The increase in the IQE, the contribution of the different regions of the cell, and the effects of the physical parameters of each region were derived and investigated in comparison with conventional solar cells.The findings revealed that the internal quantum efficiency of the solar cell with PS emitter is higher than that of the conventional one particularly for short-wavelengths (λ < 0.6 μm). Furthermore, for photons with higher energy, the emitter contribution in the IQE is more significant than the base and depletion regions. For photons with smaller energy, on the other hand, the absorption coefficients are also smaller, which leads to a higher generation rate in the base region and, hence, to a more pronounced contribution from this region to IQE. Last but not least, the improvement of IQE is observed to increase with decreased PS thickness and with heavily doped PS emitter (N_d⁺⁺ = 10²⁰ cm⁻³).     

Electrochemical characterization of activated carbon–ruthenium oxide nanoparticles composites for supercapacitors

The high specific capacitance of ruthenium oxide (denoted as RuO_x) nanoparticles prepared by a modified sol–gel method with annealing in air for supercapacitors was demonstrated in this work. The specific capacitance of activated carbon (denoted as AC) measured at 5 mA/cm² is significantly increased from 26.8 to 38.7 F/g by the adsorption of RuO_x nanoparticles with ultrasonic weltering in 1 M NaOH for 30 min. This method is a promising tool in improving the performance of carbon-based double-layer capacitors. The total specific capacitance of a composite composed of 90 wt.% AC and 10 wt.% RuO_x measured at 25 mV/s is about 62.8 F/g, which is increased up to ca. 111.7 F/g when RuO_x has been previously annealed in air at 200 °C for 2 h. The specific capacitance of RuO_x nanoparticles was promoted from 470 to 980 F/g by annealing in air at 200 °C for 2 h. The nanostructure of RuO_x was examined from the transmission electron microscopic (TEM) morphology.     

0.4% absolute efficiency gain by novel back contact

Replacing the aluminum back contact of screen-printed multicrystalline silicon solar cells by a novel low-temperature layer sequence boosts the absolute power conversion efficiency η by Δη=0.4%. The optimized hydrogenated amorphous silicon (a-Si:H)-based back side junction provides efficient back side passivation and contacting at the same time. The improved passivation quality reduces the effective surface recombination velocity S_eff to S_eff<20 cm s^?1. Due to the optimized back side layer sequence, the open circuit voltage V_OC rises by ΔV_OC=15 mV up to V_OC=622 mV and the short circuit current increases by ΔJ_SC=0.8 mA cm^?2.     

Electrochemical properties of silicon deposited on patterned wafer

An amorphous silicon thin-film deposited on a patterned wafer is prepared by radio-frequency (rf) magnetron sputtering and is characterized by X-ray diffraction, galvanostatic cycle testing and field emission scanning electron microscopy. The specimen is assembled in cell of configuration: silicon working electrode/1 M LiPF₆ in EC/DMC, electrolyte/lithium metal, counter electrode (EC = ethylenecarbonate; DMC = dimethyl carbonate). A patterned silicon (1 0 0) wafer prepared by photolithography and KOH etching is used as the electrode substrate. The size of the patterns, which are composed of arrays of the negative square pyramids, is 5 μm/side.The patterned specimen (silicon film on patterned substrate) is compared with a normal specimen (silicon deposited on a flat substrate). The rate of capacity fade on cycling is monitored as a function of the voltage window and current density. The patterned specimen displays better cycle behaviour at a high current density (high C-rate).During the cycle tests at 200 μA cm⁻², the silicon electrodes yield an initial capacity of 327 μAh (cm² μm)⁻¹. After 100 cycles, the capacity is 285 μAh (cm² μm)⁻¹ and the capacity retention is 86%. Capacity retention is 76 and 61% at cycles 200 and 300, respectively.     

Microcrystalline silicon grown by VHF PECVD and the fabrication of solar cells

Intrinsic microcrystalline silicon has been deposited by very high frequency plasma enhanced chemical vapor deposition technique at frequency of 75 MHz. Different gas mixtures of silane and hydrogen were utilized, and the evolution of microstructure and phase in film were studied, while keeping the substrate temperature at 200 °C and the chamber pressure at 0.5 Torr. Optimised material was inserted in p–i–n solar cells: preliminary efficiency of 5.5% was reached for 1 μm-thick solar cells with the V_oc around 0.6 V.     

Solar sintering of alumina ceramics: Microstructural development

Alumina powders were lab-synthesized and then sintered on a solar furnace (SF) in order to test the capability of these solar devices to produce dense ceramic bodies. The special configuration of the SF at Plataforma Solar de Almería (PSA-CIEMAT) in Spain, allowed to perform several experiments using high temperatures (up to 1780 °C), fast heating rates (50 and 100 °C min^?1) and different atmospheres (air, Ar and 95N₂:5H₂). For comparison, similar alumina samples were sintered in an electric furnace (EF) using standard conditions (5 °C min^?1 at 1600 °C during 240 min in air). An exhaustive microstructural characterization by scanning (SEM) and transmission (TEM) electron microscopies were performed on the sintered materials. Results for SF-samples showed a well-sintered alumina matrix of polyhedral grains even using shorter dwell times and higher heat-up rates than the conventional sintering. Obtained microstructures are in agreement with the presence of some impurities (mainly SiO₂, CaO, ZrO₂ and MgO) which are distributed at grain boundaries, triple points and matrix voids. For solar treatments, the variations of sintering parameters produced significant changes on matrix grain size, porosity and distribution of second phases. An important grain growth and density increase was observed after solar sintering on those tests performed at 1780 °C and under N₂:H₂ sintering atmosphere. The gathered data point out once more the convenience of SFs as sintering reactors to obtain ceramic materials with improved grain sizes.     

Effect of annealing temperature on electrochemical performance of thin-film LiMn2O4 cathode

Spinel LiMn₂O₄ thin-film cathodes were obtained by spin-coating the chitosan-containing precursor solution on a Pt-coated silicon substrate followed by a two-stage heat-treatment procedure. The LiMn₂O₄ film calcined at 700 °C for 1 h showed the highest Li-ion diffusion coefficient, 1.55 × 10⁻¹² cm² s⁻¹ (PSCA measurement) among all calcined films. It is attributed to the larger interstitial space and better crystal perfection of LiMn₂O₄ film calcined at 700 °C for 1 h. Consequently, the 700 °C-calcined LiMn₂O₄ film exhibited the best rate performance in comparison with the ones calcined at other temperatures.     

In situ image processing method to investigate performance and stability of dye solar cells

A simple and non-destructive method is introduced using image processing to investigate changes in the performance of the dye solar cells (DSCs). The main principle is based on the fact that the most important DSC components (dye, electrolyte, catalyst) have a specific color which often changes as result of degradation. Here the imaging technique is demonstrated in the case of exposing DSCs on very harsh conditions (85 °C temperature and UV + Visible light). The aging of the cells was recorded with a color sensitive camera in a well regulated setup and the photographs were processed using image analysis techniques. A key factor in making the imaging method quantitative and suitable for aging studies is color calibration which is explained in detail. The image analysis of different cell configurations revealed that the bleaching reactions of the electrolyte were related to reactions between TiO₂ and the electrolyte. The dye layer on the TiO₂ was shown slow down the degradation. Furthermore the comparison of image analysis and current–voltage curves indicated that the performance degradation of the cells was only partly due to loss of tri-iodide. The loss of photocurrent and photovoltage was apparently largely due to the harmful effect of the by-products of the bleaching and/or the degradation of the dye. In addition, a small recovery effect due to the generation of tri-iodide under reverse bias condition was seen in both image analysis and electrical measurements.     

Solar cell of 6.3% efficiency employing high deposition rate (8 nm/s) microcrystalline silicon photovoltaic layer

Microcrystalline silicon (μc-Si) films deposited at high growth rates up to 8.1 nm/s prepared by very-high-frequency-plasma-enhanced chemical vapor deposition (VHF-PECVD) at 18–24 Torr have been investigated. The relation between the deposition rates and input power revealed the depletion of silane. Under high-pressure deposition (HPD) conditions, the structural properties were improved. Furthermore, applying μc-Si to n–i–p solar cells, short-circuit current density (J_SC) was increased in accordance with the improvement of microstructure of i-layer. As a result, a conversion efficiency of 6.30% has been achieved employing the i-layer deposited at 8.1 nm/s under the HPD conditions.