磁控溅射Cu膜表面形貌演化的多尺度行为

用原子力显微镜(AFM)观察磁控溅射Cu膜的表面形貌,并基于功率谱密度(PSD)和粗糙度测量方法对薄膜进行了量化表征,研究了薄膜表面演化的动力学标度行为.结果表明:薄膜表面演化具有多尺度特征,在全域和局域呈现两种不同的标度行为.全域的粗糙度指数αg≈0.83,生长指数βg≈0.85;而局域的粗糙度指数α1≈0.88,生长指数β1≈0.26.这种差异揭示了薄膜生长机制的尺度依赖性.薄膜全域表面演化为异常标度行为,这归因于体扩散导致了晶粒几何形态的急剧变化;而局域表面演化呈现表面扩散控制的生长行为.     

ELECTROCHEMICAL PROPERTIES OF THE HYDROGEN ABSORPTION OF AMORPHOUS Ml－Ni ALLOY FILMS

ＥＬＥＣＴＲＯＣＨＥＭＩＣＡＬＰＲＯＰＥＲＴＩＥＳＯＦＴＨＥＨＹＤＲＯＧＥＮＡＢＳＯＲＰＴＩＯＮＯＦＡＭＯＲＰＨＯＵＳＭｌ－ＮｉＡＬＬＯＹＦＩＬＭＳ￥ＨＵＷｅｉｋａｎｇ;ＺＨＡＮＧＹｕｎｓｈｉ;ＳＯＮＧＤｅｙｉｎｇ;ＬＵＯＤａｏｊｕｎ;ＷＡＮＧＹｕｎ...     

EFFECT OF Ar PRESSURE ON STRUCTURAL AND ELECTRICAL PROPERTIES OF Cu FILMS DEPOSITED ON GLASS BY DC MAGNETRON SPUTTERING

Cu films with thickness of 630-1300nm were deposited on glass substrates without heating by DC magnetron sputtering in pure Ar gas. Ar pressure was controlled to 0.5, 1.0 and 1.5Pa respectively. The target voltage was fixed at 500V but the target current increased from 200 to 1150mA with Ar pressure increasing. X-ray diffrac-tion, scanning electron microscopy and atomic force microscopy were used to observe the structural characterization of the films. The resistivity of the films was measured using four-point probe technique. At all the Ar pressures, the Cu films have mixture crystalline orientations of [111], [200] and [220] in the direction of the film growth. The film deposited at lower pressure shows more [111] orientation while that deposited at higher pressure has more [220] orientation. The amount of larger grains in the film prepared at 0.5Pa Ar pressure is slightly less than that prepared at 1.0Pa and 1.5Pa Ar pressures. The resistivities of the films prepared at three different Ar pressures re     

利用XPS及电化学方法研究电镀Cr添加剂的作用机理

利用阴极极化曲线、电化学交流阻抗图谱、微分电容曲线对含有机物的镀Cr添加剂进行了研究.提出了添加剂在阴极表面形成一种(R(OH)n·CrOH·CrO4+Cr(OH)3·CrOH·CrO4)(R代表有机物)荷正电的混合阴极胶体膜,较好地解释了添加剂对阴极析Cr的去极化作用,以及溶液反应电阻增高、微分电容下降、析氢电流降低等现象.通过对镀层进行表层及深层的XPS分析,证实了上述假设.     

离子注入Cu薄膜的氧化行为研究

研究了用强流金属蒸汽弧离子源（ＭＥＶＶＡ源）注入Ｃｒ对Ｃｕ薄膜的抗氧化性能、导电性能和氧化特征的影响。利用Ｘ射线衍射、Ｒｕｔｈｅｒｆｏｒｄ背散射和扫描电镜 离子注入前后氧化物结构和氧化物形态演变。结果表明,在薄膜的表面层注入一定剂量的Ｃｒ能有效地改善Ｃｕ薄膜的抗氧化性能,而对薄膜的电导性能无显著影响;离子注入显著影响薄膜表面氧化铜的结构和形态。探讨了离子注入对氧化铜结构和形态的影响机理。     

高质量的干净极限与脏极限MgB_2超导薄膜

利用混合物理化学气相沉积法(hybrid physical-chemical vapor deposition),在0001取向的SiC和Al2O3上原位制备了高质量的c轴外延MgB2薄膜,样品具有高于41K的零转变温度,超导剩余电阻率ρ(42K)<0.5μΩcm,很好地吻合第一原理计算的干净极限行为。X射线相分析图谱上没有MgO的衍射峰出现说明这种方法极大程度上避免了MgB2制备过程最易出现的氧污染。较高的磁电阻和低温低场条件下不存在磁通跳跃都说明了样品非常干净。借助一种改进的双加热丝装置,我们在干净MgB2样品基础上实现了可控的碳掺杂,掺碳后的样品超导临界温度下降,剩余电阻率升高,电子平均自由程由于杂质散射作用的增强而得到显著抑制,为符合脏极限的超导样品。     

离子束增强沉积制备CrNx薄膜

利用离子束增强沉积（ＩＢＥＤ）技术制备了ＣｒＮｘ薄膜。对不同能量氮离子轰击所制备的薄膜进行了Ｘ射线衍射、Ｘ射线光电子能谱分析、膜层断裂韧性以及摩擦学性能研究。试验结果表明，在相同试验条件下，氮离子轰击能量影响ＣｒＮｘ薄膜的相组成及取向，低能氮离子轰击所制薄膜具有较高的ＫＩＣ数值，且表现出更优异的摩擦学性能。     

THE EFFECTS OF SPUTTERING POWER ON STRUCTURE AND ELECTRICAL PROPERTIES OF Cu FILMS

1. IntroductionCu filnls are very pron1isillg for electronic devices because of both high electromigrationresista11ce alld high electrical conductivity['--']. For a sputter-deposited film, base pressure,deposition rate, substrate temperature and energetic…     

STRUCTURAL PROPERTIES INVESTIGATION ON MICROCRYSTALLINE SILICON FILMS DEPOSITED WITH VHF-PECVD TECHNIQUE

Raman scattering spectroscopy and scanning electron microscopy (SEM) techniques were used to determine the structural properties of two typical series of microcrystalline silicon (μc-Si:H) films deposited at different VHF plasma power and different working gas pressure by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) technique. Raman spectra measurements show that both crystalline volume fraction Xc and average grain size d of μc-Si: H films are strongly affected by the two deposition conditions and are more sensitive to working gas pressure than VHF plasma power. SEM characterizations have further confirmed that VHF plasma power and working gas pressure could clearly enhance the surface roughness of/xc-Si : H films ascribing to polymerization reactions, which is also more sensitive to working gas pressure than VHF plasma power.     

铜阳极活性区溶解机制的电化学研究

用电化学方法研究了铜在３％ＮａＣｌ溶液中活性区的溶解机制。铜在活性区是以ＣｕＣｌ２＾－形式溶解的,并受它的扩散过程控制。文中提出了溶解的动力学机制。恒电流实验表明,在实际电解过程中铜是以亚铜离子的形式到达被保护表面的。     

2-巯基苯并恶唑对铜缓蚀作用的电化学研究

用电化学方法考察研究了２－巯基苯并恶唑（ＭＢＯ）在３％ＮａＣｌ溶液中对铜的缓蚀性能。ＭＢＯ同时抑制阴极和阳极过程。缓蚀效率与ＭＢＯ浓度,铜样品在含ＭＢＯ的溶液中预浸泡时间以及该溶液的腐蚀性有关。     

PREPARATION AND SURFACE CHARACTERIZATION OF TiO_2 THIN FILMS ON GLASS BY MAGNETRON SPUTTERING METHOD

1. IntroductionTiOz thin films have excellent properties sucl1 as l1igh ref1actitre il1dex, outstal1diugoptical tra11sl11ittallce, high dielectric constant and physical chemical stabilityll'2]. Recently',the TiO2 thi1l films have drawn more attel1tions oll photocatalysis, optical coating, al1dsolar cell fab.ication[3'4l. In this work we deposited Ti thin film on glass substrate b}-nlagl1etroll sputterillg lllethod and allllealing Ti tl1in fi1l11 to fOrlll TiO2 tl1ill fi1m.2. ExperimelltalT…     

LY12铝合金阳极氧化膜沸水封孔工艺条件的优化

用硫酸阳极氧化法获得了铝阳极氧化膜,并在100℃的沸水中进行封孔。用电化学法优化了沸水封孔条件,根据塔菲尔曲线得到封闭液最佳pH值为5.5~6.5,最佳封闭时间为20 min。     

MgB_2掺杂SiC的相变过程

用自蔓延法(SHS)在锥形模具内成功淬熄(CFQ)MgB2掺杂8%SiC的反应.对不同温度区域试样的XRD、SEM、EDS进行分析.结果表明:在527～650℃时Mg和B颗粒接触以扩散方式在表面发生了固—固反应,Mg的表层初次形成MgB2,在650～700℃时,包裹在初次生成的MgB2内部未反应的Mg将熔化,液态Mg的活性大大提高,以扩散、渗透的方式通过初次生成的MgB2层与B原子发生液-固反应,MgB2相界面不断地向B原子方向推进,直到完全形成MgB2;700～750℃时掺杂的SiC大部分与MgB2反应生成Mg2Si,同时有一部分C原子进入到MgB2取代了B原子,并有少量MgB2分解形成MgB4和Mg。在形核结晶过程中由于反应时间短,温度梯度大,部分Mg来不及扩散就重新结晶。     

加载速率对Al膜纳米压入蠕变性能的影响

纳米压入仪对Si片上晶Al膜进行的压入蠕变实验表明,加载方式对Al膜的蠕变性能有明显影响.随加载速率和载荷的增大, Al膜的总蠕变量和应力指数均有较大升高 且蠕变初期可能存在异常高蠕变率.分析认为这与是加载过程中未及发生的塑性变形的持续释放有关.对于确定的薄膜材荆及组织结构,加载过程中积攒的塑性变形量及其释放速率将影响不同加载条件下的总蠕变量和应力指数.     

Cu衬底MgB_2超导晶须的制备及性质

通过混合物理化学气相沉积法,在Cu衬底上制备出长有MgB2超导晶须的厚膜。MgB2晶须顶端直径在1μm左右,根部直径约200nm,长约4μm,整体呈现出六角锥状。通过实验条件的分析,知道衬底表面上方MgB2饱和度不一致,中间较周边低,可能导致了MgB2晶须生长在衬底周边区域。     

微弧氧化+电解液修饰法制备TiO2薄膜的光催化性能

在微弧氧化法制备TiO2光催化薄膜的过程中,采用向电解液中添加氧化物的方法对薄膜进行改性.实验结果表明,过渡金属、重金属及稀土元素掺杂可在不同程度上影响薄膜的光催化性能,其中,V,Ag,Ce元素掺杂可使光催化120min的降解率提高10%以上.采用半导体掺杂也能很好地提高TiO2薄膜的光催化性能,其中以SnO2效果最好.实验表明,V2O5添加量在0.5mmol/L或SnO2添加量在1.0 mmol/L时,生成的TiO2薄膜光催化效果最好.XRD及SEM分析表明,掺杂不改变TiO2晶型,改性后的TiO2光催化薄膜增厚,微弧放电形成的孔道变小,表面积增加.     

PREPARATION AND PROPERTIES OF Ni-Cr AND Fe-Cr-A1 FILMS BY VACUUM EVAPORATION

Ni-Cr and Fe-Cr-Al films deposited on the Al2O3 substrate are studied by a method of vacuum evaporation in this paper. Influence of resistance value on density and evaporation parameters of the films reveals that the resistance of films and the adhesion of films to substrates are determined by the evaporation time and the substrate temperate under the condition of the maximum vacuity of 6.2×10-4 Pa, respectively.     

B_(10)C掺杂MgB_2/NbZr/Cu线材的超导性能研究

通过原位法粉末装管工艺制备了B10C掺杂的MgB2/NbZr/Cu超导线材。采用X射线衍射仪、扫描电子显微镜(SEM)、PPMS测试仪等测试手段检测了样品的成相情况、微观结构以及超导电性。结果显示该掺杂对MgB2/NbZr/Cu超导线材的磁通钉扎性能及临界电流密度有一定的影响:750℃/2h的热处理制度能够使C元素成为有效磁通钉扎中心,线材的磁通钉扎性能和超导电性均有所提高。20K时,MgB2/NbZr/Cu超导线材的不可逆磁场Hirr达到5.2T;在20K、2T外磁场条件下,其临界电流密度达到2×104A/cm2。     

扩散阻挡层对Cu-Zr纳米合金膜电阻率与残余应力的影响

用磁控溅射和离子束溅射共沉积的方法分别在以单晶硅为基体的TiN,TaN,ZrN扩散阻挡层上沉积了Cu-Zr合金膜,膜在400℃氮气中退火1h.结果表明扩散阻挡层对膜的晶体取向、电阻率和残余应力有很大影响.沉积态的膜具有强的（111）取向,且峰型严重展宽;退火后峰型明显锐化,出现（200）等晶体取向;对应TiN,TaN;ZrN三种扩散阻挡层,膜的电阻率在沉积态时分别达108,327和478μΩ·cm,退火后降至正常的数个μΩ·cm;扩散阻挡层亦可明显降低膜的残余应力,无扩散阻挡层时膜的退火应力达475MPa,有ZrN扩散阻挡层后退火应力降至149MPa.