辐照导致奥氏体不锈钢内位错环演化行为模拟

为了描述和预测奥氏体不锈钢材料在辐照条件下位错环的演化行为,本文基于平均场速率理论结合分子动力学方法建立辐照诱导奥氏体不锈钢内位错环演化的物理模型,模拟电子、中子辐照诱导奥氏体不锈钢内位错环的演化行为,模拟结果与实验结果吻合很好。在此基础上探究了中子辐照产生的存活缺陷对材料内位错环演化行为的影响,研究表明级联碰撞过程中的缺陷存活率、缺陷成团率以及四间隙原子团簇所占的团簇份额是影响位错环演化行为的主要参数,而双间隙原子团簇份额和三间隙原子团簇份额之间比例对位错环的演化没有影响。     

非均匀形核对辐照诱导钨内微结构演化行为影响的团簇动力学模拟

金属钨(W)及其合金作为未来聚变堆最具应用前景的面向等离子体结构材料(PFMs),其服役性能直接影响聚变堆长期服役的安全性,辐照诱导W及其合金内微结构演化导致的辐照脆化现象始终是限制其工程应用的关键因素。本文基于分子动力学计算结果,进一步完善了辐照诱导材料微结构演化行为的团簇动力学模型,采用更加完备的物理模型描述材料内辐照缺陷的产生行为,并进一步探讨了W基体内辐照缺陷产生过程对微结构演化行为的影响。模拟结果表明,高能初始离位原子(PKA)诱发级联碰撞直接产生的缺陷团簇是W内位错环、空洞演化中最重要的形核机制;非均匀形核所产生的间隙团簇的扩散行为对位错环的长大行为有重要影响,会导致位错环尺寸分布中出现亚尖峰与台阶状形貌。     

Ar~+辐照Hastelloy C276显微结构演化多尺度模拟研究及实验验证

采用分子动力学结合团簇动力学研究了Hastelloy C276Ni基合金在Ar+辐照(室温,约10dpa)下的显微结构演化机理,开发了多尺度模拟程序Radieff,利用Radieff模拟了在Ar+辐照下C276中间隙位错环和孔洞的形核、长大过程。在武汉大学串列加速器-离子注入机-透射电镜一体化联机装置上开展了115keV Ar+辐照C276验证实验,采用一体化联机透射电镜观察了辐照缺陷尺寸及形貌。不同辐照剂量下位错环尺寸模拟结果与实验结果吻合很好。     

位错演化行为对奥氏体不锈钢空洞肿胀的影响

<正>奥氏体不锈钢包壳的辐照肿胀是制约快堆燃耗、影响反应堆安全性和经济性的一个关键因素,研究辐照诱导材料微观结构演化行为及其对空洞肿胀的影响,有助于更准确地预测空洞肿胀的变化趋势。本工作采用团簇动力学方法,在考虑位错环、空洞演化模型的基础上,引入位错演化模型,研究了辐照条件下位错结构的演化行为及其对空洞肿胀的影响。在不考虑位错演化的情况下,位错环尺寸无限长大,但是在真实的材料中,     

电子辐照高纯铁电阻率回复的团簇动力学模拟

电阻率回复实验是研究材料辐照损伤机理的有效手段,可表征材料中辐照缺陷数量的变化。本文基于平均场速率理论开发了模拟辐照缺陷演化的团簇动力学程序,模拟了高纯铁经3MeV电子辐照至2.0×10-6 dpa后等时时效过程的缺陷演化过程,并与电阻率回复实验结果进行了对比。模拟结果表明,辐照缺陷数量随温度升高的演化过程与电阻率的变化趋势吻合得很好,电阻率回复的峰值分别对应于间隙原子、间隙原子团簇、空位团簇等缺陷的数量变化。该方法对于研究材料辐照损伤机理具有重要意义。     

FeCr合金中Cr含量对微观结构影响的原子尺度模拟研究

低温辐照脆化是影响铁素体/马氏体（F/M）钢服役的主要问题之一。F/M钢低温辐照脆化的主要机理是辐照产生的纳米缺陷（如位错环、α′相(富Cr团簇)等）阻碍位错运动。本文利用分子动力学方法和迈氏蒙特卡罗方法对F/M钢模型材料--FeCr合金（Fe7%Cr、Fe9%Cr、Fe14%Cr）中Cr元素析出成团簇及在位错环上偏析的机理进行研究,并分析Cr团簇析出与合金成分的关系以及位错环尺寸、位错环类型和合金中Cr含量对位错环上Cr偏析量的影响。模拟结果表明：热力学模拟后,高Cr含量（>9%)的FeCr合金中会析出Cr团簇,且基体内Cr含量越高,析出的Cr团簇尺寸越大;在所研究的3种FeCr合金中,受位错环张应力场作用,合金元素Cr均会在位错环的外围偏析,且FeCr合金中Cr含量越高,Cr在位错环上偏析量越高。低Cr的FeCr合金中Cr对其辐照硬化的影响需考虑位错环上Cr偏析的影响,高Cr的FeCr合金中Cr元素对其辐照硬化的影响需综合考虑Cr团簇及位错环上Cr偏析。     

钨中自间隙原子团簇扩散行为的分子动力学模拟

钨被视为未来聚变堆中最有可能全面使用的面对等离子体材料。而在未来聚变堆真实环境下,氘氚聚变反应产生的14 MeV高能中子辐照将在材料中产生严重的原子离位损伤和各种缺陷积累。其中自间隙原子（SIA）及其团簇是中子辐照损伤中最常见的缺陷种类。本文采用分子动力学模拟系统研究钨中1/2〈111〉和〈100〉 SIA团簇的稳定结构和形成能,发现SIA团簇最稳定结构是1/2〈111〉 SIA团簇结构,SIA团簇聚集后会稳定存在。并研究了不同尺寸1/2〈111〉 SIA团簇的动力学扩散行为,发现单个SIA在温度高于700 K时易扩散和转向,而两个以上的SIA团簇在300~900 K时主要表现为一维方向的运动。为准确描述各种尺寸SIA团簇的动力学行为,给出了一套计算SIA团簇跃迁频率的经验参数。相关结果将为更大尺度的动力学蒙特卡罗和团簇动力学模拟提供准确和完备的输入参数,为正确掌握和评价钨中子辐照行为提供依据。     

金属钨级联碰撞中势函数的影响

原子间相互作用势函数的精确性会影响分子动力学级联碰撞模拟结果的精确性。本文选取5种典型的金属钨势函数进行比较测试,通过分子动力学方法,用能量为10 keV和50 keV的初级碰撞原子进行级联碰撞模拟,讨论和分析了辐照过程中缺陷的产生、缺陷团簇和位错环的分布。结果表明：对于最终稳定状态下的弗兰克尔对的数目,不同势函数的模拟结果没有明显差别,而对于缺陷的空间分布、缺陷团簇分数及位错环的分布,不同势函数的模拟结果各有特点。本文结果为用于辐照级联模拟势函数的选择提供了参考,也为钨基势函数的进一步优化提供了指导。     

金属钨级联碰撞中势函数的影响

原子间相互作用势函数的精确性会影响分子动力学级联碰撞模拟结果的精确性。本文选取5种典型的金属钨势函数进行比较测试,通过分子动力学方法,用能量为10 keV和50 keV的初级碰撞原子进行级联碰撞模拟,讨论和分析了辐照过程中缺陷的产生、缺陷团簇和位错环的分布。结果表明:对于最终稳定状态下的弗兰克尔对的数目,不同势函数的模拟结果没有明显差别,而对于缺陷的空间分布、缺陷团簇分数及位错环的分布,不同势函数的模拟结果各有特点。本文结果为用于辐照级联模拟势函数的选择提供了参考,也为钨基势函数的进一步优化提供了指导。     

双束（H+/e-）辐照下氢对12Cr-ODS铁素体钢组织损伤影响研究

利用氢离子（H⁺）束和电子（e^-）束双束（H⁺/e^-）同时辐照用化学浸润法制备的新型12Cr-ODS铁素体钢,研究其辐照损伤效应及组织变化。实验结果表明：由于氧化物的钉扎,基体内保持低密度位错网络;辐照初期随辐照剂量的增加,缺陷团在位错线上及其周围形成,尺寸增加,密度不断增大,并形成间隙型位错环;不同温度下辐照均产生小尺寸高密度的空洞,随辐照剂量的增大,空洞长大速度降低,空洞密度缓慢减小;不同温度下,辐照剂量达15dpa时,空洞肿胀均小于0.15%。对辐照产生的点缺陷与氢相互作用进行理论分析,12Cr-ODS铁素体钢在623~823K经双束辐照后,表现出良好的抗辐照损伤性。     

堆内超临界水回路辐照装置物理参数模拟研究

堆内超临界水回路对我国超临界水堆燃料和结构材料的辐照腐蚀实验具有重要意义,辐照装置位于反应堆堆芯栅格,是超临界水回路的核心部件。采用MCNP程序模拟研究辐照装置的关键物理参数,并考虑超临界水热物特性对物理参数的反馈效应。计算得到辐照装置热中子注量率为4.72×10¹³ cm^-2•s^-1,快中子注量率为1.55×10¹⁴ cm^-2•s^-1,辐照产热率为14.7 kW,反应性引入为0.045%。     

Damage production in GaAs during MeV ion implantation

The influence of the nuclear and electronic energy loss on the damage production in GaAs has been studied by Se⁺ ion implantation at T_I = 293 K with energies ranging from 2 MeV up to 20 MeV. The ion dose was varied between 5 × 10¹² /cm² and 1 × 10¹⁵ /cm². The damage production was investigated using RBS in channeling regime. Temperature and energy dependent backscattering measurements and TEM investigations were performed to study the kind of defects in more detail. The resulting defect profiles are compared with the depth distribution of the nuclear and electronic energy loss which were simulated by TRIM 87. The results show that the remaining defect concentration strongly decreases with increasing implantation energy even if the same energy density is deposited into nuclear processes. We suppose, that the electronic energy loss increases the defect transformation and annealing during implantation at T_I = 293 K. The defects in the samples implanted with energies greater than 5 MeV are characterized as point defects, point defect clusters and small dislocation loops; the kind of defects are the same over the whole implantation depth and the existence of amorphous zones can be widely excluded.     

Investigation of pulsed irradiation effects on interstitial loop growth in metals

A computer program for the solution of non steady-state diffusion equations describing the evolution of point defects and interstitial dislocation loops during pulsed and continuous irradiation is developed. The equations take into account mutual recombination of point defects, defect migration to dislocation loops and line dislocations, and the existence of equilibrium thermal vacancies. It is shown that interstitial loops grow from 2 to 9 run in diameter due to the surplus flux of interstitials in the non steady-state regime (dynamic preference) at 573 K. At 873 K the dislocation loops begin to shrink owing to line tension forces. Comparison of interstitial loop and vacancy behaviour for pulsed and continuous irradiation at 573 and 873 K is performed. It is shown that at pulse duration 2 × 10⁻⁶ s and repetition rate 100 pulses/s, pulsing does not affect the interstitial loop behaviour.     

低能电子辐照对环氧树脂性能的影响

为了研究低能电子辐照对环氧树脂的体积电阻率、邵氏硬度、拉伸强度和官能团结构的影响,本文在电子辐照能量为30 keV,注量率1×10¹¹ cm^-2•s^-1,总注量为1.6×10¹⁴ cm^-2,真空度10^-6 Pa条件下,结合国家标准对辐照前、后环氧树脂材料的机械性能和结构进行表征。结果表明,辐照后环氧树脂材料的体积电阻率、邵氏硬度、拉伸强度等宏观物理性能均有下降。傅里叶红外光谱图显示环氧树脂主要官能团强度降低,产生的•H、•OH等自由基与聚合物分子上的羟基与氢结合。研究结果对环氧树脂材料在辐射环境中的使用具有重要意义。     

Spectral Characteristics of Laser-Induced Graphite Plasma in Ambient Air

An experimental setup of laser-induced graphite plasma was built and the spectral characteristics and properties of graphite plasma were studied. From the temporal behavior of graphite plasma, the duration of CN partials(B~2∑~+→X~2∑~+) emission was two times longer than that of atomic carbon, and all intensities reached the maximum during the early stage from0.2 μs to 0.8 μs. The electron temperature decreased from 11807 K to 8755 K, the vibration temperature decreased from 8973 K to 6472 K, and the rotational temperature decreased from7288 K to 4491 K with the delay time, respectively. The effect of the laser energy was also studied, and it was found that the thresholds and spectral characteristics of CN molecular and C atomic spectroscopy presented great differences. At lower laser energies, the electron excited temperature, the electron density, the vibrational temperature and rotational temperature of CN partials increased rapidly. At higher laser energies, the increasing of electron excited temperature and electron density slow down, and the vibrational temperature and rotational temperature even trend to saturation due to plasma shielding and dissociation of CN molecules. The relationship among the three kinds of temperatures was T_(elec)T_(vib)T_(rot) at the same time. The electron density of the graphite plasma was in the order of 10~(17)cm~(-3) and 10~(18)cm~(-3).     

利用测热技术测量核反应堆中子通量密度

一种新型中子探测器被研究,其原理是利用带电离子在矿物中沉积的能量退火时会以热量的方式释放出来,通过测量释放的热量而确定中子通量密度。对新型中子探测器进行刻度,在反应堆内某位置测量的热中子通量密度为5.108×10¹¹ cm^-2•s^-1,与标定的热中子通量密度(5.000×10¹¹ cm^-2•s^-1)在2%内符合,说明该探测器可测量中子通量密度。本文方法制作的探测器体积小,可制作成不同形状,便于反应堆不同环境下的中子通量密度测量。选取相应中子能量反应截面较大的元素,该探测器还可测量不同中子能量的通量密度。     

Effects of texture and temperature cycling on irradiation growth in cold-worked zircaloy-2 at 353 and 553 K

Irradiation growth and temperature cycling experiments have been performed at 353 and 553 K on specimens taken from both longitudinal and transverse direction of 25% cold-worked zircaloy-2 pressure tube. For the longitudinal data, significant positive strains occur below a dose of 10²⁴ n/m² at both temperatures, the larger strains occurring at the lower temperature. Above this dose, longitudinal growth strains increase almost linearly with irradiation. The linear rate is greater at 553 than 353 K. In transverse specimens, a small positive transient strain occurs below a dose of 10²⁴ n/m² and negative growth rates are observed above this dose. It is suggested that the transient low dose growth behaviour at 353 and 553 K contains a substantial fraction of volume increase. The effects of changes in irradiation temperature on growth strains in cold-worked zircaloy-2 have been studied. Lowering kradiation temperature produces an initial positive transient strain which is almost fully recovered on raising the temperature again. Growth data obtained on longitudinal specimens cycled between 353 and 553 K during irradiation lends strong support to a model of growth for cold worked zircaloy-2 which consists of a transient recoverable growth component due to interstitial clustering on prism planes and a non-recoverable linear component due to interstitial induced dislocation climb.     

Formation and annealing behavior of defect clusters in electron or He-ion irradiated Ti-rich Ti–Al alloys

In order to clarify the effect of He atoms on the formation and annealing behavior of defect clusters in Ti–Al alloys, a Ti–47 at.% Al intermetallic compound has been irradiated with electrons and He-ions. Helium-ion irradiation enhances the nucleation of defect clusters, especially of interstitial loops, at temperatures from 623 to 773 K in both γ-TiAl and ₂-Ti₃Al grains of the sample. However, there is little difference between the annealing temperature ranges of defect clusters in TiAl grains formed by He-ion or electron irradiation at 623 K. The dot-shaped clusters and interstitial loops grow scarcely during annealing, but are annihilated by annealing up to 923 K. Cavities are formed after irradiation with He-ions below 10 dpa at 773 K, but no cavities are formed by electron irradiation up to 30 dpa. The cavities in γ-TiAl and ₂-Ti₃Al grains survive after annealing even at 1053 K for 1.8 ks, keeping their density and diameter to be nearly the same as those in the as-irradiated grains.     

利用HFETR制备有载体177Lu

¹⁷⁷Lu是一种优良的诊疗一体化医用放射性核素,其标记的放射性药物被广泛用于多种癌症的诊断和治疗。其中,有载体¹⁷⁷Lu的制备具有放射化学处理简单、¹⁷⁷Lu产量高等优点。为此,在高通量工程试验堆(HFETR)中利用热中子辐照¹⁷⁶Lu,开展有载体¹⁷⁷Lu的制备研究。本研究分别辐照天然Lu和富集¹⁷⁶Lu进行热实验验证,结果表明：天然Lu在2×10¹⁴ n·cm^-2·s^-1热中子通量下辐照13 d,生成¹⁷⁷Lu比活度约为0.87 Ci/mg,^177mLu杂质含量为0.009%;富集(86.5%)¹⁷⁶Lu在热中子注量率为1×10¹⁴ n·cm^-2·s^-1条件下辐照28 d,生成¹⁷⁷Lu比活度约为24.9 Ci/mg,^177m...